JP2686699B2 - Method for forming GaN mask for selective growth - Google Patents
Method for forming GaN mask for selective growthInfo
- Publication number
- JP2686699B2 JP2686699B2 JP31161492A JP31161492A JP2686699B2 JP 2686699 B2 JP2686699 B2 JP 2686699B2 JP 31161492 A JP31161492 A JP 31161492A JP 31161492 A JP31161492 A JP 31161492A JP 2686699 B2 JP2686699 B2 JP 2686699B2
- Authority
- JP
- Japan
- Prior art keywords
- gan film
- substrate
- selective growth
- mask
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- ing And Chemical Polishing (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、化合物半導体のエピタ
キシャル成長に関し、特に選択成長を行う際に使用され
るマスクの形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to epitaxial growth of compound semiconductors, and more particularly to a method of forming a mask used in selective growth.
【０００２】[0002]
【従来の技術】従来、ＧａＮ膜を使用した選択成長用マ
スクの形成方法として、基板全面にＧａＮ膜を形成し、
Ａｒスパッタによってパターニングするという方法が、
発明者らによって報告されている。2. Description of the Related Art Conventionally, as a method for forming a selective growth mask using a GaN film, a GaN film is formed on the entire surface of a substrate,
The method of patterning by Ar sputtering is
Reported by the inventors.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、Ａｒス
パッタによるＧａＮ膜のパターニングは、基板に非常に
大きなダメージ（損傷）を与え、その後結晶成長させた
結晶成長層の特質に悪影響を及ぼすという問題点があ
る。However, the patterning of a GaN film by Ar sputtering causes a very large amount of damage to the substrate, and then adversely affects the characteristics of the crystal growth layer grown by crystal growth. is there.
【０００４】本発明は、基板に与えるダメージが少な
い、ＧａＮ膜を使用した選択成長用マスクの形成方法を
提供する。The present invention provides a method for forming a mask for selective growth using a GaN film, which causes less damage to the substrate.
【０００５】[0005]
【課題を解決するための手段】本発明によれば、基板表
面にＧａＮ膜を形成する工程と、該ＧａＮ膜の所定領域
に電子ビームを照射して、該電子ビームが照射された領
域のＧａＮ膜を除去する工程とを含むことを特徴とする
選択成長用ＧａＮマスク形成方法が得られる。According to the present invention, a step of forming a GaN film on a surface of a substrate, irradiating a predetermined region of the GaN film with an electron beam, and GaN in a region irradiated with the electron beam. A method for forming a GaN mask for selective growth, which comprises the step of removing a film.
【０００６】[0006]
【実施例】以下に図面を参照して本発明の実施例を説明
する。図１にＧａＮ膜の作製工程図を示す。なお、本実
施例では、Ｇａセル、Ａｓセル、ＴＭＧノズル、及びア
ンモニアノズルを備えた成長室と、電子銃を備えた予備
室とを有する超高真空装置（図示せず）を使用する。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a process chart for manufacturing a GaN film. In this example, an ultra-high vacuum device (not shown) having a growth chamber having a Ga cell, an As cell, a TMG nozzle, and an ammonia nozzle and a preliminary chamber having an electron gun is used.
【０００７】まず、ＧａＡｓ（１００）基板１１を成長
室に導入する。そして、図１（ａ）に示すように、Ｇａ
Ａｓ（１００）基板１１上に、ＧａＡｓバッファ層１２
を結晶成長させ、清浄表面を得る。次に、ＧａＡｓバッ
ファ層１２上に、クラッキングさせたアンモニアガスを
導入しながら、基板１１の温度を６００℃〜６３０℃に
加熱する。すると、図１（ｂ）に示すようにＧａＡｓバ
ッファ層１２の清浄表面には極めて膜厚の薄いＧａＮ膜
１３が形成される。First, the GaAs (100) substrate 11 is introduced into the growth chamber. Then, as shown in FIG.
A GaAs buffer layer 12 is formed on the As (100) substrate 11.
To grow a crystal and obtain a clean surface. Next, the temperature of the substrate 11 is heated to 600 ° C. to 630 ° C. while introducing cracked ammonia gas onto the GaAs buffer layer 12. Then, as shown in FIG. 1B, an extremely thin GaN film 13 is formed on the clean surface of the GaAs buffer layer 12.
【０００８】次に、図２を参照してＧａＮ膜のパターニ
ング方法を説明する。まず、ＧａＡｓバッファ層１２及
びＧａＮ膜１３が形成された基板１１を予備室に導入す
る。予備室は成長室と連結されており、超高真空下で移
動させることができる。図２（ａ）に示すように、Ｇａ
Ｎ膜１３の所定領域に電子ビーム（ＥＢ）を照射する
と、Ｇａ及びＮは脱離し、図２（ｂ）に示すように開口
部２１を形成することができる。ここで、電子ビームの
ビーム径は直径５mm、加速電圧は１ｋＶ、照射時間は１
時間で、電子のドーズは、６×１０18 elctrons/cm2 と
した。Next, a method of patterning the GaN film will be described with reference to FIG. First, the substrate 11 on which the GaAs buffer layer 12 and the GaN film 13 are formed is introduced into the preliminary chamber. The preliminary chamber is connected to the growth chamber and can be moved under an ultrahigh vacuum. As shown in FIG. 2A, Ga
When a predetermined region of the N film 13 is irradiated with an electron beam (EB), Ga and N are desorbed, and the opening 21 can be formed as shown in FIG. 2B. Here, the beam diameter of the electron beam is 5 mm, the acceleration voltage is 1 kV, and the irradiation time is 1
The electron dose in hours was 6 × 10 18 elctrons / cm 2 .
【０００９】基板１１を再び成長室に戻し、基板温度を
５００℃にして、ＴＭＧとＡｓ4 を同時に照射したとこ
ろ、図２（ｃ）に示すように、ＧａＡｓ層２２を選択成
長することができた。すなわち、ＧａＮ膜をマスクとし
てＧａＡｓ層の選択成長を行うことができた。When the substrate 11 is returned to the growth chamber and the substrate temperature is set to 500 ° C. and TMG and As 4 are simultaneously irradiated, the GaAs layer 22 can be selectively grown as shown in FIG. 2 (c). It was That is, it was possible to selectively grow the GaAs layer using the GaN film as a mask.
【００１０】なお、上記実施例では、ＧａＮ膜１３に電
子ビームを照射する際に、基板の加熱は行わなかった
が、基板を加熱して電子ビームを照射するようにしても
良い。この場合、加熱温度は、ＧａＮが真空中で分解し
ない温度、すなわち、６００℃以下とする。In the above embodiment, the substrate was not heated when the GaN film 13 was irradiated with the electron beam, but the substrate may be heated to be irradiated with the electron beam. In this case, the heating temperature is a temperature at which GaN does not decompose in vacuum, that is, 600 ° C. or lower.
【００１１】また、上記実施例では、電子ビームのみを
用いてＧａＮ膜１３をエッチングしたが、塩素ガスやフ
ッ素ガスを同時に照射して、エッチングの促進を計るこ
ともできる。Although the GaN film 13 is etched using only the electron beam in the above embodiment, the etching can be accelerated by simultaneously irradiating chlorine gas or fluorine gas.
【００１２】[0012]
【発明の効果】本発明によれば、ＧａＮ膜に電子ビーム
を照射するようにしたことで、基板に与えるダメージが
少ないパターニング方法が得られる。According to the present invention, since the GaN film is irradiated with the electron beam, a patterning method which causes less damage to the substrate can be obtained.
【図１】本発明の一実施例のＧａＮ膜形成方法を示す工
程図である。FIG. 1 is a process chart showing a GaN film forming method according to an embodiment of the present invention.
【図２】本発明の一実施例のＧａＮ膜パターニング方法
を示す工程図である。FIG. 2 is a process drawing showing a GaN film patterning method according to an embodiment of the present invention.
１１ ＧａＡｓ（１００）基板 １２ ＧａＡｓバッファ層 １３ ＧａＮ膜 ２１ 開口部 ２２ ＧａＡｓ層 11 GaAs (100) substrate 12 GaAs buffer layer 13 GaN film 21 opening 22 GaAs layer
Claims (1)
該ＧａＮ膜の所定領域に電子ビームを照射して、該電子
ビームが照射された領域のＧａＮ膜を除去する工程とを
含むことを特徴とする選択成長用ＧａＮマスク形成方
法。1. A step of forming a GaN film on a surface of a substrate,
And a step of irradiating a predetermined region of the GaN film with an electron beam to remove the GaN film in the region irradiated with the electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31161492A JP2686699B2 (en) | 1992-11-20 | 1992-11-20 | Method for forming GaN mask for selective growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31161492A JP2686699B2 (en) | 1992-11-20 | 1992-11-20 | Method for forming GaN mask for selective growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06163487A JPH06163487A (en) | 1994-06-10 |
| JP2686699B2 true JP2686699B2 (en) | 1997-12-08 |
Family
ID=18019376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31161492A Expired - Lifetime JP2686699B2 (en) | 1992-11-20 | 1992-11-20 | Method for forming GaN mask for selective growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2686699B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
| KR20040040902A (en) * | 2002-11-08 | 2004-05-13 | 엘지전자 주식회사 | Method for selectively removing GaN substrate using laser |
-
1992
- 1992-11-20 JP JP31161492A patent/JP2686699B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06163487A (en) | 1994-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3330218B2 (en) | Semiconductor device manufacturing method and semiconductor device | |
| US4994140A (en) | Method capable of forming a fine pattern without crystal defects | |
| JPH06232100A (en) | Surface impurity removal of iii-v group semiconductor element | |
| JP3764792B2 (en) | Nitride semiconductor etching method | |
| JP2686699B2 (en) | Method for forming GaN mask for selective growth | |
| JPH0794494A (en) | Manufacture of compound semiconductor device | |
| JP2607239B2 (en) | Molecular beam epitaxy equipment | |
| JP2704931B2 (en) | Method for forming selective growth mask and method for removing same | |
| JPH09260289A (en) | Growth method of compound semiconductor single crystal | |
| JPH0955365A (en) | Surface cleaning method of semiconductor substrate | |
| JP2596027B2 (en) | Compound semiconductor crystal growth method and crystal growth apparatus | |
| JPH05213695A (en) | Method for depositing thin diamond film | |
| JP2729866B2 (en) | Compound semiconductor epitaxial growth method | |
| JP2671089B2 (en) | Quantum structure fabrication method | |
| JPH05206520A (en) | Manufacture of p-type ii-vi compound semiconductor | |
| JP2897107B2 (en) | Crystal growth method | |
| JP2891114B2 (en) | Semiconductor pattern formation method | |
| JPS63222416A (en) | Manufacture of epitaxial crystal | |
| JPH09148342A (en) | Ii-vi compd. semiconductor growing method | |
| JPH02288333A (en) | Method of forming pattern of compound semiconductor | |
| JPH07142403A (en) | Formation of mask for selective growth | |
| JPH04155817A (en) | Surface cleaning method for compound semiconductor substrate | |
| JPH06124892A (en) | Patterning method for gaas oxide film | |
| JPH0864530A (en) | Selective growing method | |
| JPH03192719A (en) | Compound semiconductor crystal growing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19970708 |