JPH06124892A - Patterning method for gaas oxide film - Google Patents
Patterning method for gaas oxide filmInfo
- Publication number
- JPH06124892A JPH06124892A JP25832292A JP25832292A JPH06124892A JP H06124892 A JPH06124892 A JP H06124892A JP 25832292 A JP25832292 A JP 25832292A JP 25832292 A JP25832292 A JP 25832292A JP H06124892 A JPH06124892 A JP H06124892A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- temperature
- substrate
- gaas
- predetermined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、化合物半導体のエピタ
キシャル成長に関し、特にＧａＡｓ基板上に化合物半導
体を選択的に成長させるために利用されるＧａＡｓ酸化
膜のパターニング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to epitaxial growth of compound semiconductors, and more particularly to a method for patterning a GaAs oxide film used for selectively growing compound semiconductors on a GaAs substrate.
【０００２】[0002]
【従来の技術】一般に、ＧａＡｓ基板の表面に形成され
た酸化膜や、Ｇａ基板の表面に形成された窒化膜は、昇
温脱離法を用いて除去できることが知られている。例え
ば、ＧａＡｓ基板上に形成された自然酸化膜は、６１０
℃〜６３０℃にまで昇温すると脱離する。2. Description of the Related Art Generally, it is known that an oxide film formed on the surface of a GaAs substrate and a nitride film formed on the surface of a Ga substrate can be removed by a thermal desorption method. For example, a natural oxide film formed on a GaAs substrate is 610
It desorbs when the temperature is raised to 630 ° C to 630 ° C.
【０００３】また、ＧａＡｓ酸化膜や、ＧａＮ膜に、Ｇ
ａを付着させると上記脱離特性は、昇温側にシフトす
る。即ち、Ｇａを付着させるとＧａを付着させないとき
に比べて低い温度で昇温脱離する。例えば、ＧａＡｓ基
板上に形成された自然酸化膜は、５４０℃以下の温度で
昇温脱離する。Further, G is added to a GaAs oxide film and a GaN film.
When a is attached, the above desorption characteristics shift to the temperature rising side. That is, when Ga is attached, the temperature rises and desorbs at a lower temperature than when Ga is not attached. For example, the natural oxide film formed on the GaAs substrate is thermally desorbed at a temperature of 540 ° C. or lower.
【０００４】従来、ＧａＡｓ酸化膜をマスクとして利用
し、ＧａＡｓ基板上にＧａＡｓを選択成長させる場合
は、上述の特性を利用して、ＧａＡｓ酸化膜の所定の領
域にＧａを付着させ、比較的低温で昇温脱離を行ってＧ
ａＡｓ酸化膜をパターニングし、ＧａＡｓ酸化膜が除去
された領域にのみＧａＡｓを選択成長させている。Conventionally, when GaAs is selectively grown on a GaAs substrate by using the GaAs oxide film as a mask, Ga is attached to a predetermined region of the GaAs oxide film by utilizing the above-mentioned characteristics, and the GaAs oxide film is relatively low in temperature. Temperature rise desorption at
The aAs oxide film is patterned, and GaAs is selectively grown only in the region where the GaAs oxide film is removed.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来の
ように、比較的低温で昇温脱離を行っただけでは、酸化
膜が除去された界面に酸素が残留していることが多い。
従って、残留酸素が界面に存在する状態で、その後のエ
ピタキシャル成長が行われ、デバイスが作成された場
合、残留酸素が、そのデバイスの電気的特性及びその他
の特性に悪影響を与えるという問題点がある。However, as in the conventional case, oxygen is often left at the interface where the oxide film is removed only by performing the thermal desorption at a relatively low temperature as in the conventional case.
Therefore, when a device is manufactured by performing the subsequent epitaxial growth with residual oxygen existing at the interface, there is a problem that the residual oxygen adversely affects the electrical characteristics and other characteristics of the device.
【０００６】本発明は、昇温脱離法を用いたＧａＡｓ酸
化膜のパターニングにおいて、酸素を残留させることな
くＧａＡｓ酸化膜を完全に除去できる方法を提供するこ
とを目的とする。It is an object of the present invention to provide a method for completely removing a GaAs oxide film without leaving oxygen in the patterning of the GaAs oxide film using the thermal desorption method.
【０００７】[0007]
【課題を解決するための手段】本発明によれば、ＧａＡ
ｓ基板上に酸化膜を形成し、前記酸化膜上の所定の領域
にＧａを選択的に照射して付着させ、前記基板温度を時
間に比例して上昇させる昇温脱離法を用いて、前記所定
領域の酸化膜を除去するＧａＡｓ酸化膜のパターニング
方法において、前記基板の温度が予め定められた第１の
所定温度に達した後、前記基板の温度を予め定められた
第２の所定温度にして、該第２の所定温度を所定時間保
持するようにしたことを特徴とするＧａＡｓ酸化膜のパ
ターニング方法が得られる。According to the present invention, GaA
s An oxide film is formed on a substrate, Ga is selectively irradiated and adhered to a predetermined region on the oxide film, and a thermal desorption method for raising the substrate temperature in proportion to time is used. In a method of patterning a GaAs oxide film for removing an oxide film in the predetermined region, after the temperature of the substrate reaches a predetermined first predetermined temperature, the temperature of the substrate is changed to a predetermined second predetermined temperature. Then, a method for patterning a GaAs oxide film is obtained, which is characterized in that the second predetermined temperature is maintained for a predetermined time.
【０００８】[0008]
【実施例】以下、図面を参照して本発明の実施例を説明
する。始めに、本実施例で使用される装置を図１を参照
して説明する。この装置は、成長室（チャンバー）１１
と、表面処理室（チャンバー）１２とを有している。成
長室１１と表面処理室１２とはゲートバルブ１３を介し
て接続されている。また、表面処理室１２にはゲートバ
ルブ１４を介して試料導入室１５が接続されている。そ
れぞれの室は独立して、真空排気することが可能で、予
め所定の真空度にまで排気されている。Embodiments of the present invention will be described below with reference to the drawings. First, the apparatus used in this embodiment will be described with reference to FIG. This device is a growth chamber (chamber) 11
And a surface treatment chamber (chamber) 12. The growth chamber 11 and the surface treatment chamber 12 are connected via a gate valve 13. A sample introduction chamber 15 is connected to the surface treatment chamber 12 via a gate valve 14. Each chamber can be independently evacuated and evacuated to a predetermined degree of vacuum in advance.
【０００９】成長室１１の内部には、ヒーター１６を備
えた基板ホルダー（図示せず）が設けられている。ま
た、成長室１１を規定する側壁には、基板ホルダーに向
かうように、Ｇａセル１７、Ａｓセル１８、ガスノズル
１９、四重極質量分析器２０、及びＲＨＥＥＤ（高速電
子線回折）電子銃２１が設けられている。また、成長室
１１の側壁には、ＲＨＥＥＤ電子銃２１に対向するよう
にＲＨＥＥＤスクリーン２２が設けられている。さら
に、先端に取り付けられたメタルマスク２３を移動させ
るためのマスク移動腕２４が設けられている。Inside the growth chamber 11, a substrate holder (not shown) equipped with a heater 16 is provided. Further, on the side wall defining the growth chamber 11, a Ga cell 17, an As cell 18, a gas nozzle 19, a quadrupole mass spectrometer 20, and a RHEED (high speed electron beam diffraction) electron gun 21 are provided so as to face the substrate holder. It is provided. Further, a RHEED screen 22 is provided on the side wall of the growth chamber 11 so as to face the RHEED electron gun 21. Further, a mask moving arm 24 for moving the metal mask 23 attached to the tip is provided.
【００１０】また、表面処理室１２の側壁にはハロゲン
ランプ２５及び酸素導入ノズル２６が設けられている。A halogen lamp 25 and an oxygen introduction nozzle 26 are provided on the side wall of the surface treatment chamber 12.
【００１１】以下、本発明の一実施例を説明する。ま
ず、ＧａＡｓ（１００）基板２７を成長室１１に導入す
る。基板２７上には、自然酸化膜が形成されているの
で、ヒーター１６で基板温度を６１０℃〜６３０℃にし
て、自然酸化膜を除去する。次に、基板２７の温度を５
８０℃に下げ、ガスノズル１９からトリエチルガリウム
（ＴＥＧ）を、Ａｓセル１８からＡｓを、基板２７の表
面に同時に照射する。これにより基板２７上にはＧａＡ
ｓバッファ層が形成される。An embodiment of the present invention will be described below. First, the GaAs (100) substrate 27 is introduced into the growth chamber 11. Since the natural oxide film is formed on the substrate 27, the substrate temperature is set to 610 ° C. to 630 ° C. by the heater 16 to remove the natural oxide film. Next, the temperature of the substrate 27 is set to 5
The temperature is lowered to 80 ° C. and the surface of the substrate 27 is simultaneously irradiated with triethylgallium (TEG) from the gas nozzle 19 and As cell 18 to As. As a result, the GaA on the substrate 27
An s buffer layer is formed.
【００１２】次に、基板温度を室温にまで下げ、基板２
７を表面処理室１２へ移動させる。そして、表面処理室
１２の内部圧力が１０Ｔｏｒｒになるまで酸素導入ノズ
ル２６より酸素を導入する。この状態で、基板２７上の
ＧａＡｓバッファ層表面にハロゲンランプ２５からの光
を１５分間照射して、酸化膜を形成する。Next, the substrate temperature is lowered to room temperature, and the substrate 2
7 is moved to the surface treatment chamber 12. Then, oxygen is introduced from the oxygen introduction nozzle 26 until the internal pressure of the surface treatment chamber 12 becomes 10 Torr. In this state, the surface of the GaAs buffer layer on the substrate 27 is irradiated with light from the halogen lamp 25 for 15 minutes to form an oxide film.
【００１３】酸化膜形成後、再び、基板２７を成長室１
１へ移動する。マスク移動腕２４を用いて、メタルマス
ク２３を基板の表面に近接させる。Ｇａセル１７よりＧ
ａを照射して、酸化膜の所定領域表面にＧａを１５mono
layer 付着させる。この後、基板２７の温度を、６０℃
／min の昇温レートで５４０℃まで昇温させる。このと
き、ＧａＡｓ酸化膜の脱離は、四重極質量分析計２０で
観測することができる。なお、上記温度（５４０℃）
は、予備実験によって求めており、表面に１５monolaye
r のＧａが付着したＧａＡｓ酸化膜が、５４０℃以下の
温度ですべて昇温脱離することは、四重極質量分析計を
用いて確認されている。After the oxide film is formed, the substrate 27 is again placed in the growth chamber 1.
Move to 1. The metal mask 23 is brought close to the surface of the substrate by using the mask moving arm 24. G from Ga cell 17
a) to irradiate the surface of a predetermined area of the oxide film with Ga.
layer attach. After that, the temperature of the substrate 27 is changed to 60 ° C.
The temperature is raised to 540 ° C. at a heating rate of / min. At this time, desorption of the GaAs oxide film can be observed by the quadrupole mass spectrometer 20. The above temperature (540 ° C)
Is obtained by preliminary experiments, and 15 monolaye on the surface
It has been confirmed using a quadrupole mass spectrometer that the GaAs oxide film having the Ga of r attached thereto is all desorbed by heating at a temperature of 540 ° C. or lower.
【００１４】基板温度が、５４０℃に達すると、直ちに
基板温度を５２０℃に下げる。そして、その温度を３０
分間保持する。この熱処理を行う前と後では、拘束電子
線回折（ＲＨＥＥＤ）パターンは、４×６パターンか
ら、２×４パターンへと変化する。すなわち、表面の状
態がより平らになり、酸素分子が脱離したものと考えら
れる。As soon as the substrate temperature reaches 540 ° C., the substrate temperature is lowered to 520 ° C. And the temperature is 30
Hold for minutes. Before and after this heat treatment, the restricted electron beam diffraction (RHEED) pattern changes from a 4 × 6 pattern to a 2 × 4 pattern. That is, it is considered that the surface condition became flatter and oxygen molecules were desorbed.
【００１５】熱処理終了後、基板２７の温度を５００℃
にして、ガスノズル１９よりトリメチルガリウム（ＴＭ
Ｇ）を、ＡｓセルよりＡｓ4 を、同時に照射してＧａＡ
ｓをエピタキシャル成長させた。ＧａＡｓ層は、ＧａＡ
ｓ酸化膜上には成長しないので、この結晶成長によりＧ
ａＡｓ酸化膜が除去された領域のみに選択成長が行われ
る。After the heat treatment, the temperature of the substrate 27 is set to 500 ° C.
Then, from the gas nozzle 19, trimethylgallium (TM
G) is simultaneously irradiated with As 4 from the As cell to produce GaA.
s was epitaxially grown. GaAs layer is GaA
Since it does not grow on the s oxide film, this crystal growth causes G
Selective growth is performed only in the region where the aAs oxide film is removed.
【００１６】このようにして得られた試料の、深さ方向
の残留酸素濃度を２次イオン分析器（ＳＩＭＳ）で測定
した。その結果を図２に示す。図２では、縦軸に酸素濃
度、横軸にエッチング時間を取っている。図２に示すよ
うに、界面における酸素濃度は、ＧａＡｓ基板の濃度と
変わらず、分析感度以下となっている。すなわち、残留
酸素は存在しないと考えて良い。The residual oxygen concentration in the depth direction of the thus obtained sample was measured by a secondary ion analyzer (SIMS). The result is shown in FIG. In FIG. 2, the vertical axis represents oxygen concentration and the horizontal axis represents etching time. As shown in FIG. 2, the oxygen concentration at the interface is the same as that of the GaAs substrate and is below the analytical sensitivity. That is, it can be considered that there is no residual oxygen.
【００１７】なお、上記実施例では、昇温脱離を行った
後、５２０℃で３０分間、熱処理を行ったが、これに限
られるものではなく、４００℃〜６００℃で、１０分か
ら３時間程度行えば良い。もちろん、高い温度では短い
時間、低い温度では長い時間という具合に、温度と時間
は適宜組み合わされなければならない。In the above example, the thermal desorption was carried out and then the heat treatment was carried out at 520 ° C. for 30 minutes, but the present invention is not limited to this, and it is carried out at 400 ° C. to 600 ° C. for 10 minutes to 3 hours. Just do it. Of course, temperature and time must be appropriately combined, such as high temperature for short time and low temperature for long time.
【００１８】また、上記熱処理を行う際に、ラジカル化
した水素をマスク開口部（ＧａＡｓ酸化膜除去部）に付
着させて行うようにしても良い。Further, when the heat treatment is performed, radicalized hydrogen may be attached to the mask opening (the GaAs oxide film removed portion).
【００１９】[0019]
【発明の効果】本発明によれば、昇温脱離を行った後、
引き続いて、所定温度で所定時間、熱処理を加えるよう
にしたことで、酸化膜除去後の残留酸素を取り除くこと
ができる。よって、その後のエピタキシャル成長層に悪
影響を与えることがなく、デバイスの特性を向上させる
ことができる。According to the present invention, after thermal desorption is performed,
Subsequently, by performing heat treatment at a predetermined temperature for a predetermined time, residual oxygen after removing the oxide film can be removed. Therefore, the characteristics of the device can be improved without adversely affecting the subsequent epitaxial growth layer.
【図１】本発明の一実施例に使用される装置の概略図で
ある。FIG. 1 is a schematic diagram of an apparatus used in an embodiment of the present invention.
【図２】本発明の一実施例によって作成された試料の残
留酸素特性を表わすグラフである。FIG. 2 is a graph showing residual oxygen characteristics of a sample prepared according to an example of the present invention.
１１ 成長室（チャンバー） １２ 表面処理室（チャンバー） １３ ゲートバルブ １４ ゲートバルブ １５ 試料導入室 １６ ヒーター １７ Ｇａセル １８ Ａｓセル １９ ガスノズル ２０ 四重極質量分析器 ２１ ＲＨＥＥＤ（高速電子線回折）電子銃 ２２ ＲＨＥＥＤスクリーン ２３ メタルマスク ２４ マスク移動腕 ２５ ハロゲンランプ ２６ 酸素導入ノズル ２７ 基板 11 growth chamber (chamber) 12 surface treatment chamber (chamber) 13 gate valve 14 gate valve 15 sample introduction chamber 16 heater 17 Ga cell 18 As cell 19 gas nozzle 20 quadrupole mass spectrometer 21 RHEED (high-speed electron beam diffraction) electron gun 22 RHEED screen 23 Metal mask 24 Mask moving arm 25 Halogen lamp 26 Oxygen introduction nozzle 27 Substrate
Claims (1)
酸化膜上の所定の領域にＧａを選択的に照射して付着さ
せ、前記基板温度を時間に比例して上昇させる昇温脱離
法を用いて、前記所定領域の酸化膜を除去するＧａＡｓ
酸化膜のパターニング方法において、前記基板の温度が
予め定められた第１の所定温度に達した後、前記基板の
温度を予め定められた第２の所定温度にして、該第２の
所定温度を所定時間保持するようにしたことを特徴とす
るＧａＡｓ酸化膜のパターニング方法。1. A thermal desorption method for forming an oxide film on a GaAs substrate, selectively irradiating and depositing a predetermined region on the oxide film with Ga, and increasing the substrate temperature in proportion to time. Method is used to remove the oxide film in the predetermined region.
In the method of patterning an oxide film, after the temperature of the substrate reaches a predetermined first predetermined temperature, the temperature of the substrate is set to a predetermined second predetermined temperature, and the second predetermined temperature is set to the predetermined second temperature. A method for patterning a GaAs oxide film, characterized in that it is held for a predetermined time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25832292A JPH06124892A (en) | 1992-09-28 | 1992-09-28 | Patterning method for gaas oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25832292A JPH06124892A (en) | 1992-09-28 | 1992-09-28 | Patterning method for gaas oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06124892A true JPH06124892A (en) | 1994-05-06 |
Family
ID=17318639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25832292A Withdrawn JPH06124892A (en) | 1992-09-28 | 1992-09-28 | Patterning method for gaas oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06124892A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0758143A1 (en) * | 1995-08-07 | 1997-02-12 | Motorola, Inc. | Improved masking method during semiconductor device fabrication |
-
1992
- 1992-09-28 JP JP25832292A patent/JPH06124892A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0758143A1 (en) * | 1995-08-07 | 1997-02-12 | Motorola, Inc. | Improved masking method during semiconductor device fabrication |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
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