JP2682928B2 - Magnetoresistive element - Google Patents
Magnetoresistive elementInfo
- Publication number
- JP2682928B2 JP2682928B2 JP4059328A JP5932892A JP2682928B2 JP 2682928 B2 JP2682928 B2 JP 2682928B2 JP 4059328 A JP4059328 A JP 4059328A JP 5932892 A JP5932892 A JP 5932892A JP 2682928 B2 JP2682928 B2 JP 2682928B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- nickel alloy
- electrode portion
- magnetic
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Hall/Mr Elements (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば磁気式エンコー
ダやモータの回転検出等に用いられる磁気抵抗素子に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic resistance element used in, for example, a magnetic encoder or rotation detection of a motor.
【０００２】[0002]
【従来の技術】従来一般に知られている磁気抵抗素子
は、ニッケル−鉄（Ｎｉ−Ｆｅ）、ニッケル−コバルト
（Ｎｉ−Ｃｏ）等の強磁性薄膜をガラス基板上に所定の
パターンに形成し、上記強磁性膜から出力を取り出すた
めの電極部を強磁性膜上に形成してなる。2. Description of the Related Art A generally known magnetoresistive element has a ferromagnetic thin film of nickel-iron (Ni-Fe), nickel- cobalt (Ni- Co ) or the like formed in a predetermined pattern on a glass substrate. An electrode portion for taking out an output from the ferromagnetic film is formed on the ferromagnetic film.
【０００３】上記強磁性薄膜の電極部には半田付けによ
ってリード線が接続されるが、ガラス基板と上記電極部
との密着性が乏しく、半田付け時の熱で電極部が剥離し
やすいという問題がある。そこで、特開昭６３−９２０
７２号公報に記載されているように、ガラス基板と電極
部との間に酸化クロム膜を形成してガラス基板と電極部
との密着性を向上させ、電極部を補強する技術が提案さ
れている。上記公報記載のもののほか、基板と磁性膜と
の密着性を向上させる目的で、基板と磁性膜との間にク
ロムやチタン、タングステン、モリブデンなどの膜を形
成したものが提案されている。A lead wire is connected to the electrode portion of the ferromagnetic thin film by soldering, but the adhesion between the glass substrate and the electrode portion is poor, and the electrode portion is likely to peel off due to heat during soldering. There is. Then, JP-A-63-920
As described in Japanese Patent Laid-Open No. 72-72, a technique has been proposed in which a chromium oxide film is formed between a glass substrate and an electrode part to improve the adhesion between the glass substrate and the electrode part and to reinforce the electrode part. There is. In addition to the ones described in the above publications, there has been proposed one in which a film of chromium, titanium, tungsten, molybdenum or the like is formed between the substrate and the magnetic film for the purpose of improving the adhesion between the substrate and the magnetic film.
【０００４】[0004]
【発明が解決しようとする課題】上記従来の技術によれ
ば、高融点金属の膜を基板と電極部との間に介在させて
いるため、電極部とガラス基板との密着性が向上し、電
極部の剥離が減少するという利点がある反面、電極部の
電気抵抗が高くなるという欠点をもっている。一方、強
磁性膜は感度調整に重要な要因をもっており、感度を上
げるために膜厚をますます薄くする傾向にある。しかる
に、磁性膜の電極部にリード線を直接半田付けすると
き、半田の組成をなす錫−鉛（Ｓｎ−Ｐｂ）合金がニッ
ケル−鉄（Ｎｉ−Ｆｅ）等でなる磁性膜に拡散し、錫−
鉛合金に磁性膜が食われ、電極部と基板との密着性が損
なわれて電極部が剥離しやすくなり、また、電極部と半
田との密着性（半田濡れ性）が悪くなるという問題があ
る。このような問題は、半田の成分であるＳｎ−Ｐｂの
組成がＳｎリッチであればあるほど磁性膜にＳｎが多く
拡散し、Ｓｎがガラス等でなる基板まで達すると電極部
と基板との密着性が極端に損なわれる。According to the invention It is an object of the above prior art, since the is interposed between the film substrate and the electrode portion of the refractory metal, improves the adhesion between the electrode portion and the glass substrate However, it has an advantage that the peeling of the electrode portion is reduced, but has a drawback that the electric resistance of the electrode portion is increased. On the other hand, the ferromagnetic film has an important factor for sensitivity adjustment, and there is a tendency to make the film thickness thinner in order to increase the sensitivity. However, when the lead wire is directly soldered to the electrode portion of the magnetic film, the tin-lead (Sn-Pb) alloy forming the solder diffuses into the magnetic film made of nickel-iron (Ni-Fe), etc. −
There is a problem that the magnetic film is eaten by the lead alloy, the adhesion between the electrode part and the substrate is impaired, the electrode part is easily peeled off, and the adhesion property (solder wettability) between the electrode part and solder is deteriorated. is there. Such a problem is that as the composition of Sn-Pb, which is a component of solder, is Sn-rich, more Sn diffuses into the magnetic film, and when Sn reaches the substrate made of glass or the like, the electrode portion and the substrate adhere to each other. Sex is extremely impaired.
【０００５】本発明は、このような問題点を解消するた
めになされたもので、基板上に形成された磁性膜の電極
部にニッケル合金膜を重ねて形成することにより、電極
部の電気抵抗が低く、電極部が剥離しにくく、電極部の
半田濡れ性のよい磁気抵抗素子を提供することを目的と
する。The present invention has been made in order to solve such a problem, and by forming a nickel alloy film on an electrode portion of a magnetic film formed on a substrate to form an electric resistance of the electrode portion. It is an object of the present invention to provide a magnetoresistive element which has a low electrode resistance, does not easily peel off the electrode portion, and has good solder wettability of the electrode portion.
【０００６】[0006]
【課題を解決するための手段】本発明は、上記目的を達
成するために、絶縁基板上に形成された磁性膜と、この
磁性膜からリード線等を半田付けして出力を取り出すた
めの電極部とを有する磁気抵抗素子において、上記磁性
膜をニッケル合金によって形成すると共に、電極部を上
記磁性膜にニッケル合金膜を重ねることによって形成し
た。電極部のニッケル合金膜は、ニッケル−鉄薄膜で形
成してもよいし、ニッケル−コバルト薄膜で形成しても
よい。In order to achieve the above object, the present invention provides a magnetic film formed on an insulating substrate and an electrode for taking out an output by soldering a lead wire or the like from the magnetic film. the magnetoresistance element and a section, the magnetic
The film was formed of a nickel alloy, and the electrode portion was formed by stacking the nickel alloy film on the magnetic film. The nickel alloy film of the electrode portion may be formed of a nickel-iron thin film or a nickel-cobalt thin film.
【０００７】[0007]
【作用】磁性膜にニッケル合金膜を重ねて形成して電極
部を構成することにより電極部が補強される。電極部に
半田付けによってリード線等を接続したとき、錫−鉛合
金の拡散が磁性膜にまで及ぶことはなく、磁性膜の電極
部の半田食われがなくなる。ニッケル合金は磁性膜の材
質と同系統の材質であり、磁性膜とのオーミックコンタ
クト性がよい。Function The electrode portion is reinforced by forming the nickel alloy film on the magnetic film to form the electrode portion. When a lead wire or the like is connected to the electrode portion by soldering, the diffusion of the tin-lead alloy does not reach the magnetic film, so that the electrode portion of the magnetic film is not eroded by solder. The nickel alloy is a material of the same type as the material of the magnetic film, and has good ohmic contact with the magnetic film.
【０００８】[0008]
【実施例】以下、図面を参照しながら本発明にかかる磁
気抵抗素子の実施例について説明する。図１において、
ガラス基板等でなる絶縁基板１上には、Ｎｉ−Ｃｏ等の
強磁性体からなる磁性膜２が形成されている。磁性膜２
の電極部の上にはさらに補強電極膜として、Ｎｉ−Ｆｅ
又はＮｉ−Ｃｏ等からなるニッケル合金膜３が重ねて形
成され、電極部６が形成されている。ニッケル合金膜３
は、磁性膜２の電極部分にのみ成膜できるようにマスク
を当て、真空蒸着装置を用いて成膜することにより形成
することができる。あるいはスパッタリング装置を用い
てニッケル合金膜３を形成することもできる。磁性膜２
の膜厚は３００〜１０００Åであるのに対し、ニッケル
合金膜３の膜厚はこれよりも厚く、１５００〜５０００
Åとする。Embodiments of the magnetoresistive element according to the present invention will be described below with reference to the drawings. In FIG.
A magnetic film 2 made of a ferromagnetic material such as Ni—Co is formed on an insulating substrate 1 made of a glass substrate or the like. Magnetic film 2
As a reinforcing electrode film on the electrode part of Ni-Fe
Alternatively, the nickel alloy films 3 made of Ni—Co or the like are formed in an overlapping manner to form the electrode portion 6. Nickel alloy film 3
Can be formed by applying a mask so that the film can be formed only on the electrode portion of the magnetic film 2 and using a vacuum vapor deposition device. Alternatively, the nickel alloy film 3 can be formed using a sputtering device. Magnetic film 2
The thickness of the nickel alloy film 3 is thicker than that of 1500 to 5000
Å.
【０００９】磁性膜２とニッケル合金膜３は、フォトリ
ソグラフ装置を用いて同時にエッチングされ、所定のパ
ターンに形成される。電極部６を構成するニッケル合金
膜３および磁性膜２の上には保護膜４が形成されてい
る。保護膜４を形成するに当たってはマスク板を用い、
ニッケル合金膜３の一部を覆って保護膜４を形成するこ
とによりニッケル合金膜３の一部の上に窓孔が形成さ
れ、この窓孔からニッケル合金膜３の一部が露出するよ
うにする。このニッケル合金膜３の露出部には半田盛り
上げ部５を形成する。半田盛り上げ部５にリード線等を
半田付けすることにより、電極部６を介して磁性膜２か
ら出力を取り出すことができる。The magnetic film 2 and the nickel alloy film 3 are simultaneously etched using a photolithographic apparatus to form a predetermined pattern. A protective film 4 is formed on the nickel alloy film 3 and the magnetic film 2 forming the electrode portion 6. A mask plate is used to form the protective film 4,
By forming the protective film 4 so as to cover a part of the nickel alloy film 3, a window hole is formed on a part of the nickel alloy film 3, and a part of the nickel alloy film 3 is exposed from the window hole. To do. A solder heap portion 5 is formed on the exposed portion of the nickel alloy film 3. By soldering a lead wire or the like to the solder heap portion 5, an output can be taken out from the magnetic film 2 via the electrode portion 6.
【００１０】以上説明したように、磁性膜２の電極部に
補強電極膜としてのニッケル合金膜３を形成し、ニッケ
ル合金膜３に外部リード等を半田付けするようにしてい
る。仮りにニッケル合金膜３を形成することなく磁性膜
２の電極部に直接リード線等を半田付けするものとすれ
ば、従来技術の問題点として前に説明したとおり、電極
部と基板との密着性が損なわれて電極部が剥離しやすく
なるとか、電極部と半田との半田濡れ性が悪くなるとい
う問題がある。しかし、磁性膜２の電極部に補強電極膜
としてのニッケル合金膜３を形成し、ニッケル合金膜３
にリード線等を半田付けするようにした上記実施例によ
れば、半田、特にその組成をなすＳｎの拡散をニッケル
合金膜３の範囲にとどまらせ、基板１との境界面までの
進行を抑えることができるため、電極部６の剥離を防止
することができるし、磁性膜２による半田食われもなく
半田濡れ性がよいという利点がある。As described above, the nickel alloy film 3 as the reinforcing electrode film is formed on the electrode portion of the magnetic film 2, and the nickel alloy film 3 is soldered with the external lead or the like. If the lead wire or the like is directly soldered to the electrode portion of the magnetic film 2 without forming the nickel alloy film 3, as described above as a problem of the conventional technique, the electrode portion and the substrate are closely attached. However, there is a problem that the electrode part is easily peeled off due to the deterioration of the property, and the solder wettability between the electrode part and the solder is deteriorated. However, the nickel alloy film 3 is formed on the electrode portion of the magnetic film 2 as a reinforcing electrode film,
According to the above-described embodiment in which the lead wire or the like is soldered, the diffusion of the solder, especially the Sn of the composition thereof, is limited to the range of the nickel alloy film 3 and the progress to the boundary surface with the substrate 1 is suppressed. Therefore, there is an advantage that the peeling of the electrode portion 6 can be prevented, the solder is not eaten by the magnetic film 2, and the solder wettability is good.
【００１１】また、上記実施例によれば、補強電極膜と
してのニッケル合金膜３を磁性膜２と同系統のニッケル
合金で形成したため、熱電対効果が少なく、オーミック
コンタクト性すなわち磁気抵抗特性の直線性が良好であ
るという利点があり、磁性膜２と同一の条件でニッケル
合金膜３を形成することができるという利点もある。Further, according to the above-mentioned embodiment, since the nickel alloy film 3 as the reinforcing electrode film is formed of the nickel alloy of the same system as the magnetic film 2, the thermocouple effect is small and the ohmic contact property, that is, the linear line of the magnetoresistive characteristic. The nickel alloy film 3 can be formed under the same conditions as the magnetic film 2.
【００１２】図２は上記実施例の磁気抵抗素子の等価回
路を示す。抵抗Ｒ１，Ｒ２は本来の磁気検出に寄与する
磁性膜の抵抗、ｒ１，ｒ２は電極部の抵抗を示す。これ
らの抵抗はＲ１，ｒ１，Ｒ２，ｒ２の順に直列に接続さ
れた形になっていて、抵抗ｒ１と抵抗Ｒ２との接続点で
ある中点から信号が取り出されるようになっている。こ
のような等価回路で表される磁気抵抗素子の磁気抵抗効
果の効率ηは、 η＝（Ｒ１＋Ｒ２）／（Ｒ１＋ｒ１＋Ｒ２＋ｒ２） となる。上記実施例のように、磁性膜２の電極パターン
の一部をニッケル合金膜３で形成すれば、電極部６の電
気抵抗ｒ１，ｒ２を下げることができ、これによって磁
気抵抗効果の効率ηを上げることができる。FIG. 2 shows an equivalent circuit of the magnetoresistive element of the above embodiment. The resistors R1 and R2 represent the resistance of the magnetic film that contributes to the original magnetic detection, and r1 and r2 represent the resistance of the electrode portion. These resistors are connected in series in the order of R1, r1, R2, and r2, and a signal is taken out from a middle point which is a connection point between the resistors r1 and R2. The efficiency η of the magnetoresistive effect of the magnetoresistive element represented by such an equivalent circuit is η = (R1 + R2) / (R1 + r1 + R2 + r2). If a part of the electrode pattern of the magnetic film 2 is formed of the nickel alloy film 3 as in the above embodiment, the electrical resistances r1 and r2 of the electrode portion 6 can be reduced, and the efficiency η of the magnetoresistive effect can be improved. Can be raised.
【００１３】補強電極膜としてのニッケル合金膜は保護
膜を形成した後に形成してもよい。図３はこのような実
施例を示すもので、ガラス等の絶縁基板１１上に磁性膜
１２を形成し、その上に保護膜１４を形成する。保護膜
１４を形成する際に電極部１６となる部分に窓孔が形成
されるようにマスクを使用してもよいし、全体に保護膜
１４を形成した後、電極部１６の保護膜をエッチング等
によって除去して窓孔を形成してもよい。上記窓孔の形
成によって露出している磁性膜１２の上に補強電極膜と
してのニッケル合金膜１３をマスク蒸着等によって形成
する。ニッケル合金膜１３は、保護膜１４の上記窓孔の
縁部も覆っている。ニッケル合金膜１３の上には半田盛
り上げ部１５を形成する。半田盛り上げ部１５にリード
線等を半田付けすることにより、電極部１６を介して磁
性膜１２から出力を取り出すことができる。この実施例
では電極部１６の構造が前記実施例と異なるだけで、作
用効果は前記実施例の場合と変わりない。The nickel alloy film as the reinforcing electrode film may be formed after forming the protective film. FIG. 3 shows such an embodiment, in which a magnetic film 12 is formed on an insulating substrate 11 such as glass, and a protective film 14 is formed thereon. When forming the protective film 14, a mask may be used so that a window hole is formed in a portion to be the electrode portion 16, or after forming the protective film 14 on the entire surface, the protective film of the electrode portion 16 is etched. Alternatively, the window holes may be formed by removing the holes. A nickel alloy film 13 as a reinforcing electrode film is formed on the magnetic film 12 exposed by the formation of the window hole by mask vapor deposition or the like. The nickel alloy film 13 also covers the edge of the window hole of the protective film 14. A solder heap portion 15 is formed on the nickel alloy film 13. By soldering a lead wire or the like to the solder build-up portion 15, an output can be taken out from the magnetic film 12 via the electrode portion 16. In this embodiment, only the structure of the electrode portion 16 is different from that of the above embodiment, and the function and effect are the same as those of the above embodiment.
【００１４】なお、磁性膜の材質としてＮｉ−Ｃｏ合金
を用い、補強電極膜としてのニッケル合金膜もＮｉ−Ｃ
ｏ合金を用いた場合、両者は同一の材料のように思われ
るが、実際には両者の組成が異なる。例えば、磁性膜は
７０Ｎｉ−Ｃｏを用い、補強電極膜としてのニッケル合
金膜は８０Ｎｉ−Ｆｅを用いる。この場合の上記磁性膜
の成膜条件は厳しいが、上記ニッケル合金膜の成膜条件
は緩やかであり、両者の特性も異なる。補強電極膜とし
てのニッケル合金膜は、Ｎｉ−ＦｅやＮｉ−Ｃｏの薄膜
のほか、Ｎｉ−Ｃｕの薄膜を用いることもできる。A Ni—Co alloy is used as the material of the magnetic film, and the nickel alloy film as the reinforcing electrode film is also Ni—C.
When the o alloy is used, both appear to be the same material, but in reality, the compositions of both are different. For example, 70 Ni-Co is used for the magnetic film, and 80 Ni-Fe is used for the nickel alloy film as the reinforcing electrode film. In this case, the film forming conditions for the magnetic film are strict, but the film forming conditions for the nickel alloy film are gradual and the characteristics of the two are different. The nickel alloy film as the reinforcing electrode film may be a thin film of Ni—Fe, Ni—Co, or a thin film of Ni—Cu.
【００１５】電極部の構成は図４のようにしてもよい。
図４において、磁性膜２２を蒸着等によって形成する前
に、補強電極としてのニッケル合金膜２３をマスク蒸着
等によって形成し、そのあとニッケル合金膜２３および
絶縁基板２１の表面を覆って上記磁性膜２２を形成す
る。磁性膜２２の上にはさらに保護膜２４を形成する。
このときマスク板等を使用することによって、ニッケル
合金膜２３の上方の保護膜２４の一部に窓孔を形成し、
この窓孔の部分に半田盛り上げ部２５を形成して電極部
２６を形成する。The structure of the electrode portion may be as shown in FIG.
In FIG. 4, before forming the magnetic film 22 by vapor deposition or the like, a nickel alloy film 23 as a reinforcing electrode is formed by mask vapor deposition or the like, and then the surface of the nickel alloy film 23 and the insulating substrate 21 is covered to cover the magnetic film. 22 is formed. A protective film 24 is further formed on the magnetic film 22.
At this time, by using a mask plate or the like, a window hole is formed in a part of the protective film 24 above the nickel alloy film 23,
The solder heap portion 25 is formed in the window portion to form the electrode portion 26.
【００１６】[0016]
【発明の効果】本発明によれば、電極部にリード線等を
半田付けしたとき、半田の組成をなすＳｎ−Ｐｂの拡散
をニッケル合金膜の範囲にとどまらせ、磁性膜と絶縁基
板との境界面までの進行を抑えることができるため、電
極部の剥離を防止することができるし、磁性膜による半
田食われもなく半田濡れ性がよいという効果がある。ま
た、ニッケル合金膜を磁性膜と同系統の合金で形成した
ため、熱電対効果がなく、オーミックコンタクト性すな
わち磁気抵抗特性の直線性が良好であるという効果があ
り、さらに、磁性膜の電極一部をニッケル合金膜で形成
することにより、電極部の電気抵抗を下げることがで
き、これによって磁気抵抗効果の効率を改善できるとい
う効果もある。According to the present invention, when a lead wire or the like is soldered to the electrode portion, the diffusion of Sn-Pb forming the composition of the solder is kept within the range of the nickel alloy film, and the magnetic film and the insulating substrate are separated from each other. Since the progress to the boundary surface can be suppressed, peeling of the electrode portion can be prevented, and the solder wettability by the magnetic film is prevented, and the solder wettability is good. In addition, since the nickel alloy film is formed of the same type of alloy as the magnetic film, there is no thermocouple effect, and ohmic contact, that is, the linearity of the magnetoresistive property is good. Formed of nickel alloy film
By doing so, there is also an effect that the electric resistance of the electrode portion can be lowered, and thereby the efficiency of the magnetoresistive effect can be improved.
【図１】本発明にかかる磁気抵抗素子の一実施例を示す
断面図。FIG. 1 is a sectional view showing an embodiment of a magnetoresistive element according to the present invention.
【図２】同上実施例の等価回路図。FIG. 2 is an equivalent circuit diagram of the above embodiment.
【図３】本発明にかかる磁気抵抗素子の別の実施例を示
す断面図。FIG. 3 is a sectional view showing another embodiment of the magnetoresistive element according to the present invention.
【図４】本発明にかかる磁気抵抗素子のさらに別の実施
例を示す断面図。FIG. 4 is a sectional view showing still another embodiment of the magnetoresistive element according to the present invention.
１ 絶縁基板 ２ 磁性膜 ３ ニッケル合金膜４ 保護膜 ６ 電極部 １１ 絶縁基板 １２ 磁性膜 １３ ニッケル合金膜１４ 保護膜 １６ 電極部２１ 絶縁基板 ２２ 磁性膜 ２３ ニッケル合金膜 ２４ 保護膜 ２６ 電極部 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Magnetic film 3 Nickel alloy film 4 Protective film 6 Electrode part 11 Insulating substrate 12 Magnetic film 13 Nickel alloy film 14 Protective film 16 Electrode part 21 Insulating substrate 22 Magnetic film 23 Nickel alloy film 24 Protective film 26 Electrode part
Claims (3)
磁性膜からリード線等を半田付けして出力を取り出すた
めの電極部とを有する磁気抵抗素子において、上記磁性
膜はニッケル合金により形成されると共に、上記電極部
は上記磁性膜にニッケル合金膜を重ねることによって形
成されていることを特徴とする磁気抵抗素子。1. A magnetic film formed on the insulating substrate, the magnetoresistive element and an electrode portion for taking out an output lead wire or the like from the magnetic film by soldering, the magnetic
The film is made of nickel alloy and the electrode part
Is a magnetoresistive element formed by stacking a nickel alloy film on the magnetic film.
鉄薄膜でなる請求項１記載の磁気抵抗素子。2. The nickel alloy film of the electrode portion is made of nickel-
The magnetoresistive element according to claim 1, which is made of an iron thin film.
コバルト薄膜でなる請求項１記載の磁気抵抗素子。3. The nickel alloy film of the electrode portion is made of nickel-
The magnetoresistive element according to claim 1, comprising a cobalt thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4059328A JP2682928B2 (en) | 1992-02-13 | 1992-02-13 | Magnetoresistive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4059328A JP2682928B2 (en) | 1992-02-13 | 1992-02-13 | Magnetoresistive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05226726A JPH05226726A (en) | 1993-09-03 |
| JP2682928B2 true JP2682928B2 (en) | 1997-11-26 |
Family
ID=13110170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4059328A Expired - Fee Related JP2682928B2 (en) | 1992-02-13 | 1992-02-13 | Magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2682928B2 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55100407U (en) * | 1978-12-29 | 1980-07-12 | ||
| JPS5724737U (en) * | 1980-07-15 | 1982-02-08 | ||
| JPH0652178B2 (en) * | 1984-03-13 | 1994-07-06 | 株式会社井上ジャパックス研究所 | Magnetic head and manufacturing method thereof |
| JPH02121377A (en) * | 1988-10-28 | 1990-05-09 | Tokin Corp | Manufacture of magnetoresistance effect element |
| JPH0816660B2 (en) * | 1990-01-16 | 1996-02-21 | 享士郎 関 | Thick film magnetic semiconductor and manufacturing method thereof |
-
1992
- 1992-02-13 JP JP4059328A patent/JP2682928B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05226726A (en) | 1993-09-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL8520325A (en) | MAGNETO-ELECTRIC TRANSDUCENT. | |
| US4319264A (en) | Nickel-gold-nickel conductors for solid state devices | |
| EP0114920B1 (en) | Integrated circuit resistor structure | |
| JP2002260901A (en) | Resistor | |
| JP3312752B2 (en) | Thin film thermistor | |
| JP2682928B2 (en) | Magnetoresistive element | |
| JP2003045703A (en) | Chip resistor and manufacturing method therefor | |
| JP4846955B2 (en) | Magnetoelectric transducer | |
| JPH0828562B2 (en) | Thin film circuit board | |
| JPS6038823A (en) | Semiconductor device | |
| JP2720442B2 (en) | Method of manufacturing magnetoresistive element | |
| JP3636190B2 (en) | Resistor and manufacturing method thereof | |
| JPH06302951A (en) | Wiring board and its manufacture | |
| JP2000182803A (en) | Thin-film resistor and its manufacture | |
| JPH0140511B2 (en) | ||
| JP3677381B2 (en) | Wiring board | |
| JPH05326647A (en) | Laminated conductor | |
| JP2004335969A (en) | Magnetoresistive element | |
| JPH03214601A (en) | Electrode structure of variable resistor | |
| KR810000725B1 (en) | Manufacturing method of thin film i.c.circuit | |
| JP2002203703A (en) | Chip type positive temperature coefficient thermistor | |
| JPH07130790A (en) | Construction of electrode of semiconductor device | |
| KR890002872B1 (en) | Method of thin film magnetic register element | |
| JP4310852B2 (en) | Electronic components | |
| JPH0945975A (en) | Semiconductor magnetic sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070808 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080808 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090808 Year of fee payment: 12 |
|
| LAPS | Cancellation because of no payment of annual fees |