JP3312752B2 - Thin film thermistor - Google Patents
Thin film thermistorInfo
- Publication number
- JP3312752B2 JP3312752B2 JP21391192A JP21391192A JP3312752B2 JP 3312752 B2 JP3312752 B2 JP 3312752B2 JP 21391192 A JP21391192 A JP 21391192A JP 21391192 A JP21391192 A JP 21391192A JP 3312752 B2 JP3312752 B2 JP 3312752B2
- Authority
- JP
- Japan
- Prior art keywords
- heat
- film
- sensitive
- ceramic substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】この発明は、薄膜サーミスタに関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film thermistor.
【０００２】[0002]
【従来の技術】図３は従来の薄膜サーミスタの構成を示
す説明図、図４は図３に示した薄膜サーミスタのＡ−Ａ
線による断面図である。図３または図４において、１は
薄膜サーミスタを示し、アルミナ、ステアタイトなどの
セラミックスで構成したセラミックス基板２と、このセ
ラミックス基板２上にクロム（Ｃｒ）−金（Ａｕ）、ク
ロム−銅（Ｃｕ）、白金（Ｐｔ）などの多層薄膜で形成
した多数の対向櫛歯状部３ａ1 ，３ｂ1 およびこの対向
櫛歯状部３ａ1 ，３ｂ1 に連なる接続パッド部３ａ2 ，
３ｂ2 からなる電極３Ａ，３Ｂと、この電極３Ａ，３Ｂ
の対向櫛歯状部３ａ1 ，３ｂ1 を覆うように炭化ケイ素
（ＳｉＣ）あるいはマンガン（Ｍｎ）、ニッケル（Ｎ
ｉ）、コバルト（Ｃｏ）、鉄（Ｆｅ）などの複合酸化物
薄膜をスパッタリング蒸着によって形成した感熱膜４と
で構成されている。５Ａ，５Ｂは電極３Ａ，３Ｂの接続
パッド部３ａ2 ，３ｂ2 にそれぞれ電気的および機械的
に接続された引き出し線、６は必要に応じて感熱膜４上
に形成する保護膜を示す。2. Description of the Related Art FIG. 3 is an explanatory view showing the structure of a conventional thin film thermistor, and FIG. 4 is a sectional view of the thin film thermistor shown in FIG.
It is sectional drawing by a line. 3 or 4, reference numeral 1 denotes a thin-film thermistor, and a ceramic substrate 2 made of ceramics such as alumina and steatite, and chromium (Cr) -gold (Au) and chromium-copper (Cu) ), platinum (Pt) number of opposing comb-teeth 3a 1 formed by multilayer thin film such as, 3b 1 and the opposing comb teeth 3a 1, 3b connected to first connecting pad portion 3a 2,
And electrodes 3A and 3B made of 3b 2 and electrodes 3A and 3B
Opposed comb teeth 3a 1, silicon carbide so as to cover the 3b 1 of (SiC) or manganese (Mn), nickel (N
i), a heat-sensitive film 4 formed by sputtering and depositing a composite oxide thin film of cobalt (Co), iron (Fe) or the like. Reference numerals 5A and 5B denote lead lines electrically and mechanically connected to the connection pads 3a 2 and 3b 2 of the electrodes 3A and 3B, respectively. Reference numeral 6 denotes a protective film formed on the heat-sensitive film 4 as necessary.
【０００３】このように構成した薄膜サーミスタ１は、
従来の一般のサーミスタにない優れた熱応答特性、ばら
つきの小さい抵抗値および抵抗温度特性を有し、量産性
が高いので、電極３Ａ，３Ｂの接続パッド部３ａ2 ，３
ｂ2 に引き出し線５Ａ，５Ｂを接続し、用途に応じて種
々のホルダに取り付けたり、あるいは種々の形状にアッ
センブリすることにより、温度センサとして各種の電子
機器や家電製品に多数用いられている。そこで、温度セ
ンサに用いられる薄膜サーミスタ１は、長期間熱ストレ
スを受けても安定した特性を有することが信頼性の面か
ら重要になってくる。[0003] The thin film thermistor 1 configured as described above is
Since it has excellent thermal response characteristics, resistance values and resistance temperature characteristics with small variations and high mass productivity that are not found in conventional general thermistors, the connection pad portions 3a 2 , 3 of the electrodes 3A, 3B are high.
b 2 to the lead wire 5A, connect 5B, by assembly into a variety of or attached to the holder or various shapes, depending on the application, it has been used a number in various electronic devices and appliances as a temperature sensor. Therefore, it is important from the viewpoint of reliability that the thin film thermistor 1 used for the temperature sensor has stable characteristics even when subjected to thermal stress for a long time.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
薄膜サーミスタ１は、４０℃と２００℃との温度サイク
ルで熱ストレス試験を行なうと、熱ストレス試験後（５
００時間後）の抵抗値が初期値に対して５％以上変動す
るという不都合があった。このように抵抗値が５％以上
変動する原因は、図４に示すように、セラミックス基板
２の上に電極３Ａ，３Ｂを設けた構造であるため、セラ
ミックス基板２の熱膨張率と電極３Ａ，３Ｂの熱膨張率
との違いにより、セラミックス基板２と電極３Ａ，３Ｂ
との接触状態が温度（熱）サイクルによって変化し、場
合によっては電極３Ａ，３Ｂがセラミックス基板２から
剥離することに起因するものと考えられる。However, when the conventional thin-film thermistor 1 is subjected to a thermal stress test at a temperature cycle of 40.degree. C. and 200.degree.
(After 00 hours), there was a problem that the resistance value fluctuated by 5% or more with respect to the initial value. As shown in FIG. 4, the reason why the resistance value fluctuates by 5% or more is the structure in which the electrodes 3A and 3B are provided on the ceramic substrate 2, so that the coefficient of thermal expansion of the ceramic substrate 2 and the electrodes 3A and 3B 3B, the ceramic substrate 2 and the electrodes 3A, 3B
It is considered that the contact state changes with the temperature (heat) cycle, and depending on the case, the electrodes 3A and 3B are separated from the ceramic substrate 2.
【０００５】また、図４からも明らかなように、セラミ
ックス基板２に感熱膜４が接触している構造であるた
め、製造工程中に高温で熱処理を施すと、感熱膜４を構
成する材料組成の一部がセラミックス基板２の中に熱拡
散することにより、感熱膜４の組成が変動し、熱処理後
の抵抗値のばらつきが大きくなり、特性が満足できるも
のではなかった。さらに、電極３Ａ，３Ｂの接続パッド
部３ａ2 ，３ｂ2 に引き出し線５Ａ，５Ｂを半田接続す
る場合、局部的加熱によって電極３Ａ，３Ｂがセラミッ
クス基板２から剥離するなどの不都合があった。Further, as is apparent from FIG. 4, since the heat-sensitive film 4 has a structure in contact with the ceramic substrate 2, if heat treatment is performed at a high temperature during the manufacturing process, the material composition of the heat-sensitive film 4 Is partially diffused into the ceramic substrate 2, the composition of the heat-sensitive film 4 fluctuates, and the resistance value after the heat treatment varies greatly, so that the characteristics are not satisfactory. Furthermore, when the lead wires 5A, 5B are connected by soldering to the connection pad portions 3a 2 , 3b 2 of the electrodes 3A, 3B, the electrodes 3A, 3B peel off from the ceramic substrate 2 due to local heating.
【０００６】この発明は、上記したような不都合を解消
するためになされたもので、熱応答特性、抵抗温度特性
を損なうことなく、熱サイクル試験後においても長期間
安定した特性を得ることができるとともに、所望の抵抗
値を容易に得ることができ、半田付け時の耐熱性にも優
れた薄膜サーミスタを提供するものである。The present invention has been made in order to solve the above-mentioned disadvantages, and it is possible to obtain long-term stable characteristics even after a heat cycle test without impairing thermal response characteristics and resistance temperature characteristics. In addition, the present invention provides a thin film thermistor that can easily obtain a desired resistance value and has excellent heat resistance during soldering.
【０００７】[0007]
【課題を解決するための手段】まず、第１の発明にかか
る薄膜サーミスタは、セラミックス基板と、このセラミ
ックス基板の一主表面において感熱膜を形成する直下に
部分的に形成した絶縁被膜と、この絶縁被膜の上に設け
た第１の感熱膜と、この第１の感熱膜の上に対向させ、
前記セラミックス基板の一主表面に接続パッド部を設け
た一対の電極膜と、この一対の電極膜の一部を挟み込む
ように前記第１の感熱膜の上に設けた少なくとも前記第
１の感熱膜よりも厚い第２の感熱膜とからなり、前記第
１の感熱膜と前記第１の感熱膜と前記第２の感熱膜と前
記絶縁被膜とを耐蝕性被膜によって被覆したものであ
る。そして、第２の発明にかかる薄膜サーミスタは、第
１の発明の薄膜サーミスタにおいて、セラミック基板の
一主表面と前記一対の電極膜の接続パッド部との間に金
属下地層を設けたものである。First, a thin film thermistor according to a first aspect of the present invention comprises a ceramic substrate, an insulating film partially formed directly below a heat sensitive film on one main surface of the ceramic substrate, and a thin film thermistor. a first heat-sensitive film provided on the insulating film, Toe pair toward the top of the first heat sensitive layer,
A pair of electrode films provided with connection pad portions on one main surface of the ceramic substrate, and at least the first heat-sensitive film provided on the first heat-sensitive film so as to sandwich a part of the pair of electrode films ; It consists of a thick second heat-sensitive membrane than the first
A first heat-sensitive film, the first heat-sensitive film, the second heat-sensitive film,
The insulating film is covered with a corrosion-resistant film . The thin film thermistor according to the second invention, in the thin film thermistor of the first aspect of the invention, the gold <br/> genus underlayer between the connection pad portions of the pair of electrode films and the one principal surface of the ceramic substrate It is provided.
【０００８】[0008]
【作用】この発明における薄膜サーミスタは、セラミッ
ク基板の一主表面に感熱膜を形成する直下に部分的に絶
縁膜を形成し、この絶縁膜上に感熱膜を形成すること
で、成膜後の熱処理の時に感熱膜と基板との熱拡散反応
を防ぎ、所望の抵抗温度特性を獲得できる。また、第１
の感熱膜とこの第１の感熱膜より膜厚が厚い第２の感熱
膜との間に一対の電極膜の一部を挟み込むようにしたの
で、第２の感熱膜の膜厚を調整することで所望の抵抗値
が得られ、且つ、挟み込まれた一対の電極膜は周囲の環
境に影響されなくなる。さらに、セラミックス基板と一
対の電極膜の接続パッド部との間にセラミックス基板と
電極膜との密着性をよくする金属下地層を設けたのでリ
ード線などの引き出し線を接続パッド部に接続する加熱
処理を施しても、接続パッド部の剥離が発生しなくな
る。The thin-film thermistor according to the present invention is partially insulated immediately below a heat-sensitive film on one main surface of a ceramic substrate.
Forming an edge film and forming a heat-sensitive film on this insulating film
Thermal diffusion reaction between the thermosensitive film and the substrate during heat treatment after film formation
And a desired resistance temperature characteristic can be obtained. Also, the first
Heat-sensitive film and a second heat-sensitive film thicker than the first heat-sensitive film
A part of a pair of electrode films was sandwiched between the film and
The desired resistance value can be obtained by adjusting the thickness of the second heat-sensitive film.
Is obtained, and the pair of electrode films sandwiched therebetween is not affected by the surrounding environment. Furthermore, a ceramic substrate is provided between the ceramic substrate and the connection pad portions of the pair of electrode films.
Since the metal base layer for improving the adhesion to the electrode film is provided, even if a heat treatment for connecting a lead wire such as a lead wire to the connection pad portion is performed, the connection pad portion does not peel off.
【０００９】[0009]
【実施例】以下、この発明の実施例を図に基づいて説明
する。図１はこの発明の一実施例である薄膜サーミスタ
の構成を示す説明図、図２（ａ）〜（ｄ）は図１に示し
た薄膜サーミスタの製造工程を示す図１のＢ−Ｂ線によ
る断面図である。図１または図２において、１１は薄膜
サーミスタを示し、セラミックス基板１２と、このセラ
ミックス基板１２の上に形成した絶縁被膜１３と、この
絶縁被膜１３の上に形成した第１の感熱膜１４と、セラ
ミックス基板１２の上に絶縁被膜１３および第１の感熱
膜１４から離して形成した金属下地層１５Ａ，１５Ｂ
と、第１の感熱膜１４の上で一部が対向し、金属下地層
１５Ａ，１５Ｂの上に接続パッド部１６ａ，１６ｂが位
置するように形成した電極膜１６Ａ，１６Ｂと、この電
極膜１６Ａ，１６Ｂの一部を挟み込むように第１の感熱
膜１４の上に設けた第２の感熱膜１７とで構成されてい
る。１８は耐蝕性被膜を示し、必要に応じて第２の感熱
膜１７を覆うように設けられる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory view showing a configuration of a thin film thermistor according to an embodiment of the present invention, and FIGS. 2A to 2D show a manufacturing process of the thin film thermistor shown in FIG. It is sectional drawing. 1 or 2, reference numeral 11 denotes a thin film thermistor, which includes a ceramic substrate 12, an insulating film 13 formed on the ceramic substrate 12, a first heat-sensitive film 14 formed on the insulating film 13, Metal underlayers 15A and 15B formed on ceramic substrate 12 and separated from insulating film 13 and first heat-sensitive film 14
And the electrode films 16A and 16B formed so that the connection pads 16a and 16b are positioned on the metal underlayers 15A and 15B, and the electrode films 16A and 16B. , 16B and a second heat-sensitive film 17 provided on the first heat-sensitive film 14 so as to sandwich a part of the heat-sensitive film. Reference numeral 18 denotes a corrosion-resistant film, which is provided so as to cover the second heat-sensitive film 17 as necessary.
【００１０】次に、薄膜サーミスタの製造を図２（ａ）
〜（ｄ）に基づいて説明する。なお、説明の都合上、製
造途中のものと、最終構成部分とは、同一符号を用いて
説明する。まず、アルミナ、石英、ムライト、ステアタ
イトなどのセラミックスで構成したセラミックス基板１
２の一主表面に、図２（ａ）に示すように、スパッタ
法、プラズマＣＶＤ法などによって二酸化ケイ素（Ｓｉ
Ｏ2 ）、窒化ケイ素（Ｓｉ3Ｎ4 ）などの厚さが0.１μ
ｍ〜1.０μｍの絶縁被膜１３を形成した後、この絶縁被
膜１３の上にスパッタ法などによって厚さが0.１μｍ〜
0.５μｍの第１の感熱膜１４を形成する。Next, the production of a thin film thermistor will be described with reference to FIG.
A description will be given based on (d). For convenience of explanation, those being manufactured and final components will be described using the same reference numerals. First, a ceramic substrate 1 made of ceramics such as alumina, quartz, mullite, steatite, etc.
As shown in FIG. 2 (a), silicon dioxide (Si
O 2 ), silicon nitride (Si 3 N 4 ), etc.
After the insulating film 13 having a thickness of 0.1 μm to 1.0 μm is formed, a thickness of 0.1 μm to
A first heat-sensitive film 14 of 0.5 μm is formed.
【００１１】そして、このように絶縁被膜１３および第
１の感熱膜１４を形成した後、５００℃〜１０００℃の
温度で１時間〜５時間の熱処理を行なう。なお、このよ
うに絶縁被膜１３および第１の感熱膜１４を形成すると
きは、セラミックス基板１２の温度を２００℃〜５００
℃に加熱しておくことが好ましい。ここで、第１の感熱
膜１４はマンガン（Ｍｎ）、ニッケル（Ｎｉ）、コバル
ト（Ｃｏ）、鉄（Ｆｅ）などからなる複合酸化物の焼結
体をターゲットとし、スパッタ圧力が0.２Ｐａ〜0.７Ｐ
ａで、セラミックス基板１２の温度が２００℃〜５００
℃の条件でスパッタリングを行なって形成する。After the insulating film 13 and the first heat-sensitive film 14 are formed as described above, a heat treatment is performed at a temperature of 500 ° C. to 1000 ° C. for 1 hour to 5 hours. When the insulating film 13 and the first heat-sensitive film 14 are formed as described above, the temperature of the ceramic substrate 12 is set to 200 ° C. to 500 ° C.
It is preferable to heat to ° C. Here, the first heat-sensitive film 14 targets a sintered body of a composite oxide made of manganese (Mn), nickel (Ni), cobalt (Co), iron (Fe), etc., and has a sputtering pressure of 0.2 Pa or more. 0.7P
a, the temperature of the ceramic substrate 12 is 200 ° C. to 500 ° C.
It is formed by performing sputtering under the condition of ° C.
【００１２】次に、図２（ｂ）に示すように、フォトエ
ッチング法によって絶縁被膜１３および第１の感熱膜１
４の不要部分を除去する。そして、リード線などの引き
出し線を接続するための電極膜１６Ａ，１６Ｂの接続パ
ッド部１６ａ，１６ｂに相当する部分Ｔａ，Ｔｂにセラ
ミックス基板１２と電極膜１６Ａ，１６Ｂとの密着性を
よくするためにケイ素（Ｓｉ）、チタン（Ｔｉ）、モリ
ブデン（Ｍｏ）、クロム（Ｃｒ）、アルミニウム（Ａ
ｌ）の少なくとも一種以上からなる金属下地層１５Ａ，
１５Ｂを形成する。Next, as shown in FIG. 2B, the insulating film 13 and the first heat-sensitive film 1 are formed by a photo-etching method.
4 is removed. Then, in order to improve the adhesion between the ceramic substrate 12 and the electrode films 16A, 16B, portions Ta, Tb corresponding to the connection pad portions 16a, 16b of the electrode films 16A, 16B for connecting lead wires such as lead wires. Silicon (Si), titanium (Ti), molybdenum (Mo), chromium (Cr), aluminum (A
l) a metal underlayer 15A comprising at least one or more of
15B is formed.
【００１３】さらに、図２（ｃ）に示すように、電極膜
１６Ａ，１６Ｂを形成する。次に、図２（ｄ）に示すよ
うに、第１の感熱膜１４を形成した複合酸化物で第２の
感熱膜１７をスパッタリングおよびフォトエッチング法
によって前述した条件と同じ条件で0.１μｍ〜2.０μｍ
の厚さに形成する。そして、第２の感熱膜１７を形成し
た後、５００℃〜１０００℃の温度で１時間〜５時間の
熱処理を行なう。次に、必要に応じて二酸化ケイ素（Ｓ
ｉＯ2 ）、窒化ケイ素（Ｓｉ3 Ｎ4 ）などの耐蝕性被膜
１８を形成する。Further, as shown in FIG. 2C, electrode films 16A and 16B are formed. Next, as shown in FIG. 2D, the second heat-sensitive film 17 is formed from the composite oxide on which the first heat-sensitive film 14 has been formed by sputtering and photoetching to a thickness of 0.1 μm to 0.1 μm under the same conditions as described above. 2.0 μm
Formed to a thickness of After the second heat-sensitive film 17 is formed, heat treatment is performed at a temperature of 500 ° C. to 1000 ° C. for 1 hour to 5 hours. Next, if necessary, silicon dioxide (S
A corrosion-resistant film 18 made of iO 2 ) or silicon nitride (Si 3 N 4 ) is formed.
【００１４】上述したようにして製造した薄膜サミース
タ１１は、４０℃と２００℃との温度（熱）サイクル試
験を１万回行ない、試験前の抵抗値に対する変化率を調
べた結果、抵抗値の変化率は＋0.７％であった。また、
薄膜サーミスタ１１を２６０℃±５℃の半田槽に５秒間
浸漬し、浸漬の前後の抵抗値の変化率を調べた結果、＋
0.2 ％で、電極膜１６Ａ，１６Ｂの剥離がなかった。The thin film sammister 11 manufactured as described above was subjected to a temperature (thermal) cycle test at 40 ° C. and 200 ° C. 10,000 times, and the rate of change with respect to the resistance before the test was examined. The rate of change was + 0.7%. Also,
The thin-film thermistor 11 was immersed in a solder bath at 260 ° C. ± 5 ° C. for 5 seconds, and the rate of change in resistance before and after immersion was examined.
At 0.2%, the electrode films 16A and 16B did not peel off.
【００１５】なお、上記した実施例では、個々の薄膜サ
ーミスタ１１に分割したチップの状態について説明した
が、実際には一枚の基板上に多数の薄膜サーミスタ１１
を一度にパターン形成し、最後に個々の薄膜サーミスタ
１１に分割して完成するものである。また、電極膜１６
Ａ，１６Ｂの形状は、実施例で示した形状の他、櫛歯形
状であってもよいことは言うまでもない。In the above-described embodiment, the state of the chip divided into the individual thin film thermistors 11 has been described. However, actually, a large number of thin film thermistors 11 are provided on one substrate.
Is formed at a time, and is finally divided into individual thin film thermistors 11 to complete. The electrode film 16
Needless to say, the shapes of A and 16B may be comb-shaped in addition to the shapes shown in the embodiment.
【００１６】さらに、金属下地層１５Ａ，１５Ｂを第１
の感熱膜１４の後に形成する例で説明したが、絶縁被膜
１２の形成前に形成してもよい。そして、第１および第
２の感熱膜１４，１７を複合酸化物として説明したが、
マンガン（Ｍｎ）、ニッケル（Ｎｉ）、コバルト（Ｃ
ｏ）、鉄（Ｆｅ）の単体の酸化物、または２種以上の複
合酸化物であってもよい。また、金属下地層１５Ａ，１
５Ｂを設けた例で説明したが、この金属下地層１５Ａ，
１５Ｂを設けなくともよい。さらに、第１および第２の
感熱膜１４，１７の膜厚は、上記した実施例に限定され
るものでなく、所望の抵抗値によって変わるものであ
る。Further, the metal base layers 15A and 15B are
Although the example in which the insulating film 12 is formed after the heat-sensitive film 14 has been described, it may be formed before the insulating film 12 is formed. Although the first and second heat-sensitive films 14 and 17 have been described as composite oxides,
Manganese (Mn), nickel (Ni), cobalt (C
o), a simple oxide of iron (Fe), or a composite oxide of two or more types. Also, the metal base layers 15A, 1
5B, the metal base layer 15A,
15B may not be provided. Further, the film thicknesses of the first and second heat-sensitive films 14 and 17 are not limited to those in the above-described embodiment, but may be changed according to a desired resistance value.
【００１７】[0017]
【発明の効果】以上のように、第１の発明によれば、セ
ラミック基板の一主表面に感熱膜を形成する直下に部分
的に絶縁膜を形成し、この絶縁膜上に感熱膜を形成する
ことで、成膜後の熱処理の時に感熱膜と基板との熱拡散
反応を防ぎ、熱応答性特性、抵抗温度特性を損なうこと
なく所望の抵抗値を容易に得ることができる。また、第
１の感熱膜とこの第１の感熱膜より膜厚が厚い第２の感
熱膜との間に一対の電極膜の一部を挟み込むようにした
ので、第２の感熱膜の膜厚を調整することで所望の抵抗
値が得られ、且つ、挟み込まれた一対の電極膜は周囲の
環境に影響されなくなるため、熱サイクル試験後におい
ても長期間安定した特性を得ることができる。As described above, according to the first aspect of the present invention , the portion directly below the heat-sensitive film on one main surface of the ceramic substrate is formed.
Forming an insulating film, and forming a heat-sensitive film on this insulating film
This allows thermal diffusion between the thermosensitive film and the substrate during heat treatment after film formation.
The reaction can be prevented, and a desired resistance value can be easily obtained without impairing the thermal response characteristics and the resistance temperature characteristics. Further, the first heat-sensitive film and the second heat-sensitive film having a thickness larger than that of the first heat-sensitive film.
A part of a pair of electrode films is sandwiched between the heat film
Therefore, a desired resistance can be obtained by adjusting the thickness of the second heat-sensitive film.
Since a value is obtained and the pair of electrode films sandwiched between them is not affected by the surrounding environment, stable characteristics can be obtained for a long period even after the heat cycle test.
【００１８】さらに、セラミックス基板と一対の電極膜
の接続パッド部との間にセラミックス基板と電極膜との
密着性をよくする金属下地層を設けたのでリード線など
の引き出し線を接続パッド部に接続する加熱処理を施し
ても、接続パッド部の剥離を防止することができる。Further, the ceramic substrate and the electrode film are disposed between the ceramic substrate and the connection pad of the pair of electrode films .
Since the metal base layer for improving the adhesion is provided, even if a heat treatment for connecting a lead wire such as a lead wire to the connection pad portion is performed, peeling of the connection pad portion can be prevented.
【図１】この発明の一実施例である薄膜サーミスタの構
成を示す説明図である。FIG. 1 is an explanatory diagram showing a configuration of a thin film thermistor according to an embodiment of the present invention.
【図２】（ａ）〜（ｄ）は図１に示した薄膜サーミスタ
の製造工程を示す図１のＢ−Ｂ線による断面図である。2 (a) to 2 (d) are cross-sectional views taken along the line BB of FIG. 1 showing manufacturing steps of the thin film thermistor shown in FIG.
【図３】従来の薄膜サーミスタの構成を示す説明図であ
る。FIG. 3 is an explanatory diagram showing a configuration of a conventional thin film thermistor.
【図４】図３に示した薄膜サーミスタのＡ−Ａ線による
断面図である。FIG. 4 is a sectional view of the thin film thermistor shown in FIG. 3 taken along line AA.
１１ 薄膜サーミスタ １２ セラミックス基板 １３ 絶縁被膜 １４ 第１の感熱膜 １５Ａ，１５Ｂ 金属下地層 １６Ａ，１６Ｂ 電極膜 １６ａ，１６ｂ 接続パッド部 １７ 第２の感熱膜 １８ 耐蝕性被膜 DESCRIPTION OF SYMBOLS 11 Thin-film thermistor 12 Ceramic substrate 13 Insulating film 14 First heat-sensitive film 15A, 15B Metal underlayer 16A, 16B Electrode film 16a, 16b Connection pad part 17 Second heat-sensitive film 18 Corrosion-resistant film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 遠藤 治之 東京都墨田区錦糸１丁目７番７号 石塚 電子株式会社内 (56)参考文献 特開 昭61−160902（ＪＰ，Ａ) 特開 昭57−12502（ＪＰ，Ａ) 特開 昭62−291001（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01C 7/02 - 7/22 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Haruyuki Endo 1-7-7 Kinshi, Sumida-ku, Tokyo Ishizuka Electronics Co., Ltd. (56) References JP-A-61-160902 (JP, A) JP-A-57 -12502 (JP, A) JP-A-62-291001 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01C 7/ 02-7/22
Claims (2)
する直下に部分的に形成した絶縁被膜と、 この絶縁被膜の上に設けた第１の感熱膜と、 この第１の感熱膜の上に対向させ、前記セラミックス基
板の一主表面に接続パッド部を設けた一対の電極膜と、 この一対の電極膜の一部を挟み込むように前記第１の感
熱膜の上に設けた少なくとも前記第１の感熱膜よりも厚
い第２の感熱膜とからなり、前記第１の感熱膜と前記第
１の感熱膜と前記第２の感熱膜と前記絶縁被膜とを耐蝕
性被膜によって被覆したことを特徴とする薄膜サーミス
タ。A ceramic substrate, an insulating film partially formed directly below a heat-sensitive film on one main surface of the ceramic substrate, a first heat-sensitive film provided on the insulating film, Toe pair toward the top of one of the heat-sensitive layer, a pair of electrode films provided with connection pad portions on one main surface of said ceramic substrate, said first sensitive to sandwich a portion of the pair of electrode films
Consists at least the first thicker than the heat-sensitive layer second thermosensitive layer provided on the thermal film, the said first heat-sensitive layer first
Corrosion resistance of the first heat-sensitive film, the second heat-sensitive film, and the insulating film
Thin film thermistor characterized in that coated by gender coating.
て、 前記セラミック基板の一主表面と前記一対の電極膜の接
続パッド部との間に金属下地層を設けた、 ことを特徴とする薄膜サーミスタ。2. A thin film thermistor according to claim 1, thin film characterized the metallic underlayer disposed, that between the connection pad portions of the pair of electrode films and the first major surface of the ceramic substrate Thermistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21391192A JP3312752B2 (en) | 1992-08-11 | 1992-08-11 | Thin film thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21391192A JP3312752B2 (en) | 1992-08-11 | 1992-08-11 | Thin film thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0661012A JPH0661012A (en) | 1994-03-04 |
| JP3312752B2 true JP3312752B2 (en) | 2002-08-12 |
Family
ID=16647077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21391192A Expired - Fee Related JP3312752B2 (en) | 1992-08-11 | 1992-08-11 | Thin film thermistor |
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| Country | Link |
|---|---|
| JP (1) | JP3312752B2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6081182A (en) * | 1996-11-22 | 2000-06-27 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor element and temperature sensor including the same |
| JP3929705B2 (en) | 2001-02-05 | 2007-06-13 | ユーディナデバイス株式会社 | Semiconductor device and chip carrier |
| JP4409820B2 (en) * | 2002-11-20 | 2010-02-03 | 株式会社大泉製作所 | Non-contact temperature sensor and manufacturing method thereof |
| JP4871548B2 (en) * | 2005-08-29 | 2012-02-08 | Ｓｅｍｉｔｅｃ株式会社 | Thin film thermistor |
| JP4962087B2 (en) * | 2007-03-28 | 2012-06-27 | 三菱マテリアル株式会社 | Thin film thermistor and thin film thermistor manufacturing method |
| JP4962088B2 (en) * | 2007-03-28 | 2012-06-27 | 三菱マテリアル株式会社 | Thin film thermistor and thin film thermistor manufacturing method |
| JP5509393B1 (en) | 2012-07-13 | 2014-06-04 | Ｓｅｍｉｔｅｃ株式会社 | Thin film thermistor element and manufacturing method thereof |
| JP6543888B2 (en) * | 2013-05-13 | 2019-07-17 | 株式会社村田製作所 | Electronic parts |
| JP2018066592A (en) | 2016-10-17 | 2018-04-26 | Koa株式会社 | Platinum temperature sensor element |
| CN107192470B (en) * | 2017-06-27 | 2023-06-20 | 深圳刷新生物传感科技有限公司 | Integrated thermosensitive circuit and manufacturing method thereof |
| CN107393784A (en) * | 2017-09-07 | 2017-11-24 | 上海长园维安电子线路保护有限公司 | It is a kind of can be resistant to high pressure from control type protector and preparation method thereof |
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1992
- 1992-08-11 JP JP21391192A patent/JP3312752B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JPH0661012A (en) | 1994-03-04 |
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