JP2671367B2 - Vapor phase epitaxial growth equipment - Google Patents
Vapor phase epitaxial growth equipmentInfo
- Publication number
- JP2671367B2 JP2671367B2 JP63085836A JP8583688A JP2671367B2 JP 2671367 B2 JP2671367 B2 JP 2671367B2 JP 63085836 A JP63085836 A JP 63085836A JP 8583688 A JP8583688 A JP 8583688A JP 2671367 B2 JP2671367 B2 JP 2671367B2
- Authority
- JP
- Japan
- Prior art keywords
- mercury
- gas
- carrier gas
- epitaxial growth
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔概 要〕 水銀を含む化合物半導体の気相エピタキシャル成長装
置に関し、 水銀を担持するキャリアガスを加熱する必要の無い構
成の気相エピタキシャル成長装置を実現することを目的
とし、 水銀を含むキャリアガスと、エピタキシャル成長ガス
を含むキャリアガスとをガス導入管を通じて反応管内に
導入し、該反応管内に収容されたサセプタ上の基板を加
熱して前記水銀を含むキャリアガスとエピタキシャル成
長ガスを含むキャリアガスとを反応させて基板上に水銀
を含む化合物半導体のエピタキシャル結晶を成長する装
置であって、前記ガス導入管に、断熱性のピストンを有
するシリンダと該シリンダの出口にガス導入管に連なる
シャッターを備えかつ水銀を収容する断熱性の加圧容器
を付設し、該加圧容器内に収容した水銀をピストンとシ
ャッターの操作による断熱膨張により微粒子状の液滴に
形成して前記キャリアガスに分散混合させるように構成
する。DETAILED DESCRIPTION OF THE INVENTION [Overview] A vapor phase epitaxial growth apparatus for a compound semiconductor containing mercury, which aims to realize a vapor phase epitaxial growth apparatus that does not require heating of a carrier gas carrying mercury. And a carrier gas containing epitaxial growth gas are introduced into the reaction tube through a gas introduction tube, and the substrate on the susceptor housed in the reaction tube is heated to contain the carrier gas containing mercury and the epitaxial growth gas. A device for growing an epitaxial crystal of a compound semiconductor containing mercury on a substrate by reacting with a carrier gas, wherein the gas introducing pipe is connected to a cylinder having a heat insulating piston and the gas introducing pipe is connected to an outlet of the cylinder. A heat-insulating pressure vessel equipped with a shutter and containing mercury is attached to the inside of the pressure vessel. Containers mercury formed into particulate droplets by adiabatic expansion due to the operation of the piston and the shutter configured to disperse mixed with the carrier gas.
本発明は気相エピタキシャル成長装置に関する。赤外
線検知素子のような光電変換素子の形成材料としてエネ
ルギーバンドギャップの狭い水銀・カドミウム・テルル
(Hg1-XCdXTe)のような化合物半導体結晶が用いられて
いる。The present invention relates to a vapor phase epitaxial growth apparatus. A compound semiconductor crystal such as mercury, cadmium, tellurium (Hg 1-X Cd X Te) having a narrow energy band gap is used as a material for forming a photoelectric conversion element such as an infrared detection element.
このような化合物半導体結晶を素子形成に都合が良い
ように大面積で、かつ薄膜状態に形成するには、反応管
内に収容されたカドミウム・テルル(CdTe)のような化
合物半導体基板上にキャリアガスとしての水素ガスに担
持された水銀及びキャリアガスにジメチルカドミウム、
ジエチルテルルのようなエピタキシャル成長用ガスを担
持して導入し、基板を加熱して前記エピタキシャル成長
用ガスを分解し、この分解した線分を基板に被着させる
MOCVD(Metal Organic Chemical Vapor Deposition;有
機金属化学気相成長)法が用いられている。To form such a compound semiconductor crystal in a large area and in a thin film state, which is convenient for device formation, a carrier gas is placed on a compound semiconductor substrate such as cadmium tellurium (CdTe) housed in a reaction tube. As a carrier gas and mercury carried on hydrogen gas as dimethyl cadmium,
An epitaxial growth gas such as diethyl tellurium is carried and introduced, the substrate is heated to decompose the epitaxial growth gas, and the decomposed line segment is deposited on the substrate.
The MOCVD (Metal Organic Chemical Vapor Deposition) method is used.
従来のこのような気相エピタキシャル成長装置に付い
て述べる。The conventional vapor phase epitaxial growth apparatus will be described.
第4図は従来の気相エピタキシャル成長装置を模式的
に示す説明図であり、図示するように石英よりなる反応
管1内に、CdTeの基板2を配置したグラファイトよりな
るサセプタ3が設置され、反応管1の周囲にはサセプタ
3を加熱するための高周波誘導コイル4が設置されてい
る。FIG. 4 is an explanatory view schematically showing a conventional vapor phase epitaxial growth apparatus. As shown in the figure, a graphite susceptor 3 on which a CdTe substrate 2 is arranged is installed in a reaction tube 1 made of quartz, and a reaction is performed. A high frequency induction coil 4 for heating the susceptor 3 is installed around the tube 1.
また反応管1に連なるガス導入管5は三方に分岐さ
れ、分岐されたガス導入管5Aよりジメチルカドミウムガ
スを担持した水素ガス、ガス導入管5Bよりジエチルテル
ルガスを担持した水素ガス、ガス導入管5Cより水銀を担
持した水素ガスがそれぞれ反応管1内に導入される。Further, the gas introduction pipe 5 connected to the reaction pipe 1 is branched in three directions. Hydrogen gas carrying dimethyl cadmium gas from the branched gas introduction pipe 5A, hydrogen gas carrying diethyl tellurium gas from the gas introduction pipe 5B, gas introduction pipe Hydrogen gas carrying mercury from 5 C is introduced into each reaction tube 1.
また反応管1のガス流出側にはキャップ6が設けら
れ、該キャップ6を通じてガス排出管7が設けられてい
る。A cap 6 is provided on the gas outflow side of the reaction tube 1, and a gas exhaust pipe 7 is provided through the cap 6.
このような装置を用いて基板上に水銀・カドミウム・
テルルの結晶を成長する場合、反応管1内を一旦排気し
た後、ガス導入管5A,5B,5Cよりジメチルカドミウムガス
を担持した水素ガス、ジエチルテルルガスを担持した水
素ガス、水銀をガス状として担持した水素ガスをそれぞ
れ反応管1内に導入し、高周波誘導コイル4に高周波電
力を印加してサセプタ3を加熱することで反応管1内に
導入されたガスを反応させて基板2上に水銀・カドミウ
ム・テルルのエピタキシャル相を形成している。Using such a device, mercury, cadmium,
In the case of growing tellurium crystals, after exhausting the inside of the reaction tube 1 once, hydrogen gas carrying dimethyl cadmium gas, hydrogen gas carrying diethyl tellurium gas, and mercury are gasified from the gas introduction tubes 5A, 5B, 5C. The carried hydrogen gas is introduced into the reaction tube 1, and high-frequency power is applied to the high-frequency induction coil 4 to heat the susceptor 3, thereby reacting the gas introduced into the reaction tube 1 and mercury on the substrate 2.・ Forms an epitaxial phase of cadmium tellurium.
ところでガス状の水銀を担持した水素ガスは反応管1
の管壁やガス導入管5,5Cの管壁が冷たい状態では、水銀
の蒸気がそれらの冷たい管壁で冷却されて凝結し、付着
し易いため、水銀・カドミウム・テルルの結晶のエピタ
キシャル成長に必要な量の水銀を反応管1内に輸送する
ことができない。By the way, the hydrogen gas carrying the gaseous mercury is the reaction tube 1
When the tube walls of the gas and the gas inlet tubes 5 and 5C are cold, mercury vapor is cooled by the cold tube walls and easily condenses, which is necessary for epitaxial growth of mercury, cadmium, and tellurium crystals. A large amount of mercury cannot be transported into the reaction tube 1.
そのため、第4図に示すようにサセプタ3よりガスの
導入側の反応管1の管壁、及び水銀をガス状として担持
したキャリアガスのガス導入管5Cにヒータ8を設け、こ
のヒータ8を加熱することで、水銀蒸気の凝結を防ぎ管
壁に水銀を付着しないようにしている。Therefore, as shown in FIG. 4, the heater 8 is provided on the wall of the reaction tube 1 on the gas introduction side of the susceptor 3 and the gas introduction tube 5C of the carrier gas carrying mercury in a gaseous state, and the heater 8 is heated. This prevents mercury vapor from condensing and prevents mercury from adhering to the tube wall.
また第5図に示すように水銀9を収容し、水素ガスの
キャリアガスを導入して容器内の水銀9をバブルさせ
て、水銀をガス状にしてキャリアガスに混合して反応管
1内に導入する蒸発器10の周囲にもヒータ11を設けてい
る。Further, as shown in FIG. 5, mercury 9 is accommodated, a carrier gas of hydrogen gas is introduced to bubble the mercury 9 in the container, and the mercury is gasified and mixed with the carrier gas into the reaction tube 1. A heater 11 is also provided around the evaporator 10 to be introduced.
しかし、第4図に示すようなガス導入管5Cの周囲のヒ
ータ8、及び反応管1のサセプタ3よりガス導入側に設
けたヒータ8は250℃程度の温度で加熱しており、その
ためこのヒータ8の加熱によって分岐していないガス導
入管5、及び反応管1内に導入されてきたジメチルカド
ミウムガス、或いはジエチルテルルガスのようなエピタ
キシャル成長用ガスが、基板2上に到達するまでに分解
する恐れがあり、所望の組成のエピタキシャル層が基板
2上に形成されないという問題が生じる。However, the heater 8 around the gas introduction pipe 5C as shown in FIG. 4 and the heater 8 provided on the gas introduction side of the susceptor 3 of the reaction tube 1 are heated at a temperature of about 250 ° C. Therefore, this heater is used. There is a fear that the epitaxial growth gas such as dimethylcadmium gas or diethyl tellurium gas introduced into the gas introduction pipe 5 and the reaction pipe 1 not branched by the heating of 8 may be decomposed before reaching the substrate 2. There is a problem that an epitaxial layer having a desired composition cannot be formed on the substrate 2.
本発明は上記した問題点を解決し、反応管やガス導入
管を加熱する必要のない気相エピタキシャル成長装置の
提供を目的とする。An object of the present invention is to solve the above problems and provide a vapor phase epitaxial growth apparatus that does not require heating of a reaction tube or a gas introduction tube.
上記目的を達成する本発明の気相エピタキシャル成長
装置は、水銀を含むキャリアガスと、エピタキシャル成
長ガスを含むキャリアガスとをガス導入管を通じて反応
管内に導入し、該反応管内に収容されたサセプタ上の基
板を加熱して前記水銀を含むキャリアガスとエピタキシ
ャル成長ガスを含むキャリアガスとを反応させて基板上
に水銀を含む化合物半導体のエピタキシャル結晶を成長
する装置であって、前記ガス導入管に、断熱性のピスト
ンを有するシリンダと該シリンダの出口にガス導入管に
連なるシャッターを備えかつ水銀を収容する断熱性の加
圧容器を付設し、該加圧容器内に収容した水銀をピスト
ンとシャッターの操作による断熱膨張により微粒子状の
液滴に形成して前記キャリアガスに分散混合させる構成
にする。In the vapor phase epitaxial growth apparatus of the present invention to achieve the above object, a carrier gas containing mercury and a carrier gas containing an epitaxial growth gas are introduced into a reaction tube through a gas introduction tube, and a substrate on a susceptor housed in the reaction tube. Is an apparatus for growing an epitaxial crystal of a compound semiconductor containing mercury on a substrate by heating a carrier gas containing mercury and a carrier gas containing an epitaxial growth gas by heating the gas introducing pipe, A cylinder having a piston and a shutter connected to a gas introduction pipe at the exit of the cylinder are attached, and a heat-insulating pressurized container containing mercury is attached, and the mercury contained in the pressurized container is insulated by operating the piston and the shutter. By expansion, fine droplets are formed and dispersed and mixed in the carrier gas.
また、前記微粒子状の液滴となってキャリアガスに分
散した水銀に電荷を付与する手段を設けると共に、該水
銀を含むキャリアガスが流通するガス導入管、およびサ
セプタよりガスの流入側の反応管の内壁を前記水銀に付
与した電荷と同一極性に帯電させるための電極を設けた
構成とする。Further, a means for applying an electric charge to the mercury dispersed in the carrier gas as the fine particle droplets is provided, and a gas introduction pipe through which the carrier gas containing the mercury flows and a reaction pipe on the gas inflow side of the susceptor Is provided with an electrode for charging the inner wall of the battery with the same polarity as the charge applied to the mercury.
水銀を収容する蒸発器内に水素ガスのようなキャリア
ガスを導入してバブルさせたガス状の水銀は低温のガス
導入管や、反応管内の低温領域の壁面に接すると凝結し
て液化する。この時のキャリアガス中の水銀の分圧は壁
面の温度で決められる水銀の飽和蒸気圧と等しくなる。
この圧力は当初のガス化した水銀の分圧より相当低いの
で、所定の水銀量を輸送することができない。Gaseous mercury, which has been bubbled by introducing a carrier gas such as hydrogen gas into an evaporator that contains mercury, condenses and liquefies when it comes into contact with the low-temperature gas introduction pipe or the wall surface of the low-temperature region in the reaction pipe. The partial pressure of mercury in the carrier gas at this time becomes equal to the saturated vapor pressure of mercury determined by the temperature of the wall surface.
Since this pressure is considerably lower than the partial pressure of the initially gasified mercury, it is not possible to transport a predetermined amount of mercury.
しかし、水銀を断熱膨張により微粒子状に液滴化した
状態でキャリアガス中に分散して輸送する場合には、そ
の液滴がガス導入管や反応管等の低温な壁面に接触して
もキャリアガスの水銀分圧には変化が無い。キャリアガ
スの温度と壁面の温度が等しいため、水銀分圧はこれら
の温度での飽和蒸気圧に等しく、キャリアガス中には水
銀が既に液滴で存在しているのでこの状態のままであ
る。However, when mercury is dispersed in a carrier gas in the form of droplets by adiabatic expansion and transported, even if the droplets come into contact with a low temperature wall surface such as a gas inlet pipe or a reaction pipe, There is no change in the mercury partial pressure of the gas. Since the temperature of the carrier gas and the temperature of the wall surface are equal, the mercury partial pressure is equal to the saturated vapor pressure at these temperatures, and since mercury is already present in the carrier gas in the form of droplets, this state remains.
従って、キャリアガス中には多量の水銀の液滴が存在
し、必要な水銀量を輸送することができる。Therefore, a large amount of mercury droplets are present in the carrier gas, and the required amount of mercury can be transported.
更に、微粒子状に液滴化した水銀の液滴を負に帯電さ
せると共に、その帯電電位と同じ電位にガス導入管や反
応管の内壁を保つようにすることによって、該液滴が前
記内壁に完全に付着しないようにすることができる。Further, by negatively charging the mercury droplets formed into fine particles, and by keeping the inner wall of the gas introduction tube or the reaction tube at the same potential as the charging potential, the droplets are allowed to adhere to the inner wall. It can be prevented from completely adhering.
即ち、前記液滴がガス導入管や反応管の内壁面に近づ
こうとすると、電磁気力による反撥作用を受けるから該
液滴は内壁面に近づくことができなくなり、所定量の水
銀をサセプタに配置した基板上に確実に輸送することが
でき、所望の組成のエピタキシャル層が得られる。That is, when the liquid droplets try to approach the inner wall surface of the gas introduction tube or the reaction tube, the liquid droplets cannot reach the inner wall surface due to the repulsion action due to the electromagnetic force, and a predetermined amount of mercury is placed on the susceptor. It can be reliably transported onto the substrate, and an epitaxial layer having a desired composition can be obtained.
以下、図面を用いて本発明の実施例につき詳細に説明
する。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第1図は本発明の気相エピタキシャル成長装置の第1
実施例の説明図であり、第4図と同等の機能を有する部
分には同一符号を付している。FIG. 1 is the first of the vapor phase epitaxial growth apparatus of the present invention.
It is explanatory drawing of an Example and the same code | symbol is attached | subjected to the part which has a function equivalent to FIG.
本実施例では図示するように水銀を担持する水素ガス
からなるキャリアガスを流通させるガス導入管5Cの途中
に、該ガス導入管5Cに連なる部分にシャッター33を備え
た水銀35を収容する断熱性の加圧容器31を設けている。In the present embodiment, as shown in the figure, in the middle of the gas introduction pipe 5C through which a carrier gas composed of hydrogen gas carrying mercury is circulated, a heat insulating property for accommodating the mercury 35 provided with a shutter 33 in a portion connected to the gas introduction pipe 5C is provided. The pressure vessel 31 is provided.
この加圧容器31内には、該容器31をシリンダとして上
下方向に移動可能なピストン32を備えており、該ピスト
ン32と、ガス導入管5Cに対して開閉可能となるシャッタ
ー33は断熱部材で形成されている。The pressurizing container 31 is provided with a piston 32 that is vertically movable with the container 31 as a cylinder. The piston 32 and the shutter 33 that can be opened and closed with respect to the gas introduction pipe 5C are heat insulating members. Has been formed.
そして前記ピストン32を押し下げて加圧容器31の水銀
供給口34より水銀35を該加圧容器31内に導入した後、該
ピストン32を押し上げて水銀35を所定の圧力に加圧した
後、シャッター33を開放することによりその際に生じる
断熱膨張で水銀35の微粒子が形成されて飛び出し、ガス
導入管5C内を流通する水素ガスからなるキャリアガス内
に分散し、この分散した微粒子状の水銀の液滴は混合し
たキャリアガスと共に反応管1内に導入される。Then, the piston 32 is pushed down to introduce the mercury 35 into the pressure vessel 31 through the mercury supply port 34 of the pressure vessel 31, the piston 32 is pushed up to pressurize the mercury 35 to a predetermined pressure, and then the shutter is released. By opening 33, fine particles of mercury 35 are formed by adiabatic expansion that occurs at that time and pop out, dispersed in a carrier gas consisting of hydrogen gas flowing in the gas introduction pipe 5C, and the dispersed fine particles of mercury. The droplets are introduced into the reaction tube 1 together with the mixed carrier gas.
なお、水銀35を微粒子状の液滴とするのに、前記加圧
容器31内のピストン32を押し上げた後、ピストン32を下
げて断熱膨張させて水銀35の微粒子状の液滴を作り、そ
の後にシャッター33を開放するようにしてもよい。Incidentally, in order to make mercury 35 into fine droplets, after pushing up the piston 32 in the pressure vessel 31, the piston 32 is lowered and adiabatically expanded to form fine droplets of mercury 35, and Alternatively, the shutter 33 may be opened.
上記キャリアガス中に分散した水銀の微粒子の量は、
水銀がすべてガス化した場合に2×10-2気圧となるよう
に調節して反応管1内に導入する。また、その反応管1
内には他の分岐したガス導入管5Aからは水素ガスに担持
されたジメチルカドミウムを3×10-5気圧、ガス導入管
5Bからは水素ガスに担持されたジエチルテルルを2×10
-4気圧の分圧で導入し、基板2の温度が400℃となるよ
うにサセプタ3を加熱することによりHg0.8Cd0.3Teから
なるエピタキシャル結晶層を基板2上に成長することが
できる。The amount of fine particles of mercury dispersed in the carrier gas is
When mercury is completely gasified, the pressure is adjusted to 2 × 10 -2 atm and introduced into the reaction tube 1. Also, the reaction tube 1
From inside the other branched gas inlet pipe 5A, dimethyl cadmium supported on hydrogen gas was supplied at 3 × 10 -5 atm.
From 5B, 2x10 of diethyl tellurium supported on hydrogen gas was used.
The epitaxial crystal layer made of Hg 0.8 Cd 0.3 Te can be grown on the substrate 2 by introducing it at a partial pressure of −4 atm and heating the susceptor 3 so that the temperature of the substrate 2 becomes 400 ° C.
このような方法では、断熱膨張により微粒子状の液滴
となってキャリアガス中に分散した水銀は、ガス導入管
5C及び反応管1を予め加熱しなくてもそれらの内壁に付
着することなく、水銀の必要量をサセプタ3上に輸送で
き、水銀の微粒子状の液滴が分散したキャリアガスの流
量を制御することで所望の分圧の水銀が反応管1内に導
入することができる。In such a method, mercury that has become a fine particle droplet due to adiabatic expansion and is dispersed in the carrier gas is
The required amount of mercury can be transported onto the susceptor 3 without adhering to the inner walls of the 5C and the reaction tube 1 without preheating them, and the flow rate of the carrier gas in which fine particles of mercury are dispersed is controlled. Thus, mercury having a desired partial pressure can be introduced into the reaction tube 1.
更に、第2図は本発明の気相エピタキシャル成長装置
の第2実施例の説明図であり、第1図と同等の機能を有
する部分には同一符号を付している。Further, FIG. 2 is an explanatory view of a second embodiment of the vapor phase epitaxial growth apparatus of the present invention, and the parts having the same functions as those in FIG. 1 are designated by the same reference numerals.
本実施例が前記第1図で示す第1実施例と異なってい
る点は、加圧容器31内のシャッター33とガス導入管5Cと
連結した部位との間の空間に図示のように正電極となる
金網41を設け、この金網41が正電極で、加圧容器31が負
電極となるように直流電源42を用いて直流電圧を印加
し、断熱膨張によって微粒子状に液滴化された水銀を帯
電した金網41とは逆の負の電荷を帯電させる構成とする
と共に、前記分岐したガス導入管5C及び5とサセプタ3
が収容されている位置よりガス導入側の反応管1の外壁
面に金属板等より成る電極43を設け、この電極43を負と
なるように直流電源44を用いて直流電圧を印加するよう
にしていることである。This embodiment is different from the first embodiment shown in FIG. 1 in that the positive electrode is provided in the space between the shutter 33 in the pressure vessel 31 and the portion connected to the gas introducing pipe 5C as shown in the figure. A metal wire 41 is provided, and a DC voltage is applied by using a DC power supply 42 so that the metal wire 41 serves as a positive electrode and the pressure vessel 31 serves as a negative electrode, and mercury is formed into fine particles by adiabatic expansion. Is configured to be charged with a negative charge opposite to the charged wire net 41, and the branched gas introduction pipes 5C and 5 and the susceptor 3 are provided.
An electrode 43 made of a metal plate or the like is provided on the outer wall surface of the reaction tube 1 on the gas introduction side with respect to the position where is stored, and a DC voltage is applied by using a DC power supply 44 so that the electrode 43 becomes negative. It is that.
このような実施例の構成とすることによって、断熱性
の加圧容器31内から断熱膨張により発生し、直流電源44
からの直流電圧を印加した前記金網41を通って飛び出し
てくる微粒子状の液滴の水銀は、負に帯電された状態で
ガス導入管5C内を流通するキャリアガス中に分散し、こ
の分散され負に帯電された微粒子状の水銀の液滴が混合
されたキャリアガスは他のガス導入管5A及び5Bからのエ
ピタキシャル成長ガスを含むキャリアガスと共に反応管
1内に導入する。With such a configuration of the embodiment, the DC power source 44 is generated by adiabatic expansion from the inside of the heat-insulating pressure vessel 31.
The mercury in the form of fine particles that fly out through the wire net 41 to which a DC voltage is applied is dispersed in the carrier gas flowing in the gas introduction pipe 5C in a negatively charged state, and this is dispersed. The carrier gas mixed with the negatively charged particulate mercury droplets is introduced into the reaction tube 1 together with the carrier gas containing the epitaxial growth gas from the other gas introduction tubes 5A and 5B.
このとき、前記ガス導入管5C及び5とガス導入側の反
応管1の外壁面に設けた金属板等より成る電極43を負と
なるように直流電源44により直流電圧を印加しておくこ
とにより、前記キャリアガス内に含まれる負に帯電した
微粒子状の液滴からなる水銀がガス導入管5C及び5とガ
ス導入側の反応管1の内壁面に近づくと負の電極43に対
して反撥作用が働き、それらの内壁面に付着しない状態
で基板2上に運ばれるため、第1実施例に比較してより
高信頼度の気相エピタキシャル成長を実現可能とする装
置が得られる。At this time, by applying a DC voltage from the DC power supply 44 so that the electrode 43 made of a metal plate or the like provided on the outer wall surface of the gas introduction tubes 5C and 5 and the reaction tube 1 on the gas introduction side becomes negative, When the mercury composed of negatively charged fine particle droplets contained in the carrier gas approaches the inner wall surfaces of the gas introduction tubes 5C and 5 and the reaction tube 1 on the gas introduction side, it repels the negative electrode 43. Works and is carried onto the substrate 2 in a state of not adhering to the inner wall surfaces thereof, so that an apparatus capable of realizing more reliable vapor phase epitaxial growth as compared with the first embodiment can be obtained.
第3図は本発明の第3実施例の説明図であり、第2図
と同等の機能を有する部分には同一符号を付している。FIG. 3 is an explanatory view of the third embodiment of the present invention, and the parts having the same functions as those in FIG. 2 are designated by the same reference numerals.
本実施例が前記第2図で示す第2実施例と異なってい
る点は、水銀を担持する水素ガスからなるキャリアガス
を流通させるガス導入管5Cの途中に、前記第2実施例で
記述した断熱性の加圧容器の替わりに水銀23を収容し、
超音波振動で水銀23を微粒子状にして飛散させる超音波
振動子22を付設した例えばチタン製の水銀収容容器21を
設け、その容器21内の水銀23上に該水銀23の表面より微
小空間を隔てて、微粒子状になってキャリアガスに分散
した水銀に負の電荷を帯電させるための正電極となる金
網41と、ガス導入側の反応管1の外壁に負に帯電した水
銀の微粒子を弾き返す金属板からなる負の電極43を設け
たことである。This embodiment is different from the second embodiment shown in FIG. 2 in that it is described in the second embodiment in the middle of the gas introducing pipe 5C through which a carrier gas composed of hydrogen gas carrying mercury is circulated. Contains mercury 23 instead of a heat-insulating pressurized container,
A mercury container 22 made of, for example, titanium provided with an ultrasonic oscillator 22 that disperses mercury 23 into fine particles by ultrasonic vibration is provided, and a minute space is formed on the mercury 23 in the container 21 from the surface of the mercury 23. Separately, a wire net 41, which serves as a positive electrode for charging negative charge to mercury dispersed in a carrier gas in the form of fine particles, and repels negatively charged fine particles of mercury on the outer wall of the reaction tube 1 on the gas introduction side. That is, the negative electrode 43 made of a metal plate is provided.
このような実施例の構成によれば、超音波振動子22の
振動によって水銀収容容器21内の水銀23の液面より水銀
23が略0.01〜0.1μmの直径の微粒子となって飛び出
す。このとき直流電源42により前記容器21の負電極と金
網41の正電極に直流電圧が印加されているので飛び出し
た微粒子状の水銀は負に帯電された状態で前記ガス導入
管5Cより導入されたキャリアガスの水素ガス中に分散
し、この分散した微粒子状の水銀の液滴はキャリアガス
と共に反応管1内に導入される。According to the configuration of such an embodiment, the vibration of the ultrasonic transducer 22 causes the mercury from the liquid surface of the mercury 23 in the mercury storage container 21.
23 will be ejected as fine particles having a diameter of approximately 0.01 to 0.1 μm. At this time, since a DC voltage is applied to the negative electrode of the container 21 and the positive electrode of the wire net 41 by the DC power source 42, the particulate mercury that jumped out was introduced from the gas introduction pipe 5C in a negatively charged state. It is dispersed in hydrogen gas as a carrier gas, and the dispersed droplets of mercury in the form of fine particles are introduced into the reaction tube 1 together with the carrier gas.
このときも前記ガス導入管5C及びガス導入管5と、サ
セプタ3が収容されている位置よりガス導入側の反応管
1の外壁に設けた金属板からなる電極43に前記微粒子状
の水銀23に帯電された負の帯電電位と同等の負の帯電電
位となるように直流電源44により直流電圧を印加してお
くことにより、前記した負に帯電したキャリアガスと共
に導入する水銀の微粒子は電極43に対して反撥が生じる
ため、前記ガス導入管5C及びガス導入管5とガス導入側
の反応管1の内壁に水銀の微粒子が確実に付着せず、必
要な所定量の水銀を基板1上に導入することができる。
従って、第2実施例と同様に信頼度の高い気相エピタキ
シャル成長を実現可能とする装置が得られる。Also at this time, the electrode 43 made of a metal plate provided on the outer wall of the reaction tube 1 on the gas introduction side from the position where the gas introduction pipe 5C and the gas introduction pipe 5 and the susceptor 3 are accommodated By applying a direct current voltage from the direct current power source 44 so that the negative charge potential is equivalent to the negative charge potential charged, the fine particles of mercury introduced together with the negatively charged carrier gas described above to the electrode 43. On the other hand, since the repulsion occurs, the fine particles of mercury do not adhere to the inner walls of the gas introduction pipe 5C and the gas introduction pipe 5 and the reaction pipe 1 on the gas introduction side, and a required amount of mercury is introduced onto the substrate 1. can do.
Therefore, it is possible to obtain an apparatus capable of realizing highly reliable vapor phase epitaxial growth as in the second embodiment.
以上に述べたように、本発明よれば、反応管1及びガ
ス導入管5,5Cに付着し易いガス状の水銀が微粒子状の液
滴、或いは負に帯電した微粒子状の液滴となってキャリ
アガス内に分散した状態でガス導入管5,5Cを通して反応
管1内に導入、或いは負の帯電電位としたガス導入管5,
5Cを通して反応管1内に導入されるため、ガス導入管5,
5C及び反応管1の管壁を加熱しなくても、その管壁に水
銀が付着する恐れがなくなり、他のエピタキシャル成長
用ガスがサセプタ3上に導入されるまでに分解されるよ
うな不都合な現象が解消できる。As described above, according to the present invention, gaseous mercury that easily adheres to the reaction tube 1 and the gas introduction tubes 5 and 5C becomes fine particle droplets or negatively charged fine particle droplets. Introduced into the reaction tube 1 through the gas introduction pipes 5 and 5C in a state of being dispersed in the carrier gas, or the gas introduction pipe 5 having a negative charging potential,
Since it is introduced into the reaction tube 1 through 5C, the gas introduction tube 5,
Even if the 5C and the tube wall of the reaction tube 1 are not heated, there is no risk of mercury adhering to the tube wall, and an inconvenient phenomenon in which another epitaxial growth gas is decomposed before being introduced onto the susceptor 3. Can be resolved.
また、水銀を担持するキャリアガスの流量を調節する
のみで、所望の分量の水銀が反応管1内に導入されるの
で、組成の安定したエピタキシャル結晶が容易に得られ
る。Moreover, since a desired amount of mercury is introduced into the reaction tube 1 only by adjusting the flow rate of the carrier gas that supports mercury, an epitaxial crystal having a stable composition can be easily obtained.
更に、水銀がガス導入管及び反応管の管壁に付着する
ような現象が除去できるので原料の無駄な消費が避けら
れ、反応管内が水銀の無付着により清浄に保たれて高品
質のエピタキシャル結晶が得られる。Furthermore, since the phenomenon that mercury adheres to the gas introduction tube and the wall of the reaction tube can be removed, wasteful consumption of raw materials is avoided, and the inside of the reaction tube is kept clean due to the absence of mercury adhesion and a high-quality epitaxial crystal is obtained. Is obtained.
以上の説明から明らかなように、本発明の気相エピタ
キシャル成長装置によれば、組成の安定した高品質な化
合物半導体のエピタキシャル結晶が容易に得られる効果
がある。As is clear from the above description, the vapor phase epitaxial growth apparatus of the present invention has an effect of easily obtaining a high-quality epitaxial crystal of a compound semiconductor having a stable composition.
第1図は本発明の装置の第1実施例の説明図である。 第2図は本発明の装置の第2実施例の説明図である。 第3図は本発明の第3実施例の説明図である。 第4図は従来の気相エピタキシャル成長装置の説明図で
ある。 第5図は従来の気相エピタキシャル成長装置の要部の説
明図である。 図において、 1は反応管、2は基板、3はサセプタ、5,5A,5B,5Cはガ
ス導入管、21は水銀収容容器、22は超音波振動子、23,3
5は水銀、31は加圧容器、32はピストン、33はシャッタ
ー、34は水銀供給口、41は金網、42,44は直流電源、43
は電極を示す。FIG. 1 is an explanatory view of the first embodiment of the apparatus of the present invention. FIG. 2 is an illustration of a second embodiment of the device of the present invention. FIG. 3 is an explanatory diagram of the third embodiment of the present invention. FIG. 4 is an explanatory view of a conventional vapor phase epitaxial growth apparatus. FIG. 5 is an explanatory diagram of a main part of a conventional vapor phase epitaxial growth apparatus. In the figure, 1 is a reaction tube, 2 is a substrate, 3 is a susceptor, 5,5A, 5B and 5C are gas introduction tubes, 21 is a mercury container, 22 is an ultrasonic transducer, and 23,3
5 is mercury, 31 is a pressurized container, 32 is a piston, 33 is a shutter, 34 is a mercury supply port, 41 is a wire mesh, 42 and 44 are DC power supplies, 43
Indicates an electrode.
Claims (3)
ル成長ガスを含むキャリアガスとをガス導入管を通じて
反応管内に導入し、該反応管内に収容されたサセプタ上
の基板を加熱して前記水銀を含むキャリアガスとエピタ
キシャル成長ガスを含むキャリアガスとを反応させて基
板上に水銀を含む化合物半導体のエピタキシャル結晶を
成長する装置であって、 前記ガス導入管に、断熱性のピストンを有するシリンダ
と該シリンダの出口にガス導入管に連なるシャッターを
備え,かつ水銀を収容する断熱性の加圧容器を付設し、
該加圧容器内に収容した水銀をピストンとシャッターの
操作による断熱膨張により微粒子状の液滴に形成してキ
ャリアガスに分散混合することを特徴とする気相エピタ
キシャル成長装置。1. A carrier gas containing mercury and a carrier gas containing an epitaxial growth gas are introduced into a reaction tube through a gas introduction tube, and the substrate on the susceptor housed in the reaction tube is heated to contain the carrier containing the mercury. A device for growing an epitaxial crystal of a compound semiconductor containing mercury on a substrate by reacting a gas with a carrier gas containing an epitaxial growth gas, wherein the gas introduction pipe has a cylinder having a heat insulating piston and an outlet of the cylinder. Is equipped with a shutter connected to the gas introduction pipe, and is equipped with a heat-insulating pressurized container for containing mercury,
A vapor phase epitaxial growth apparatus characterized in that mercury contained in the pressure vessel is formed into fine droplets by adiabatic expansion by the operation of a piston and a shutter and dispersed and mixed in a carrier gas.
に分散した水銀に電荷を付与する手段を設けると共に、
該水銀を含むキャリアガスが流通するガス導入管、およ
び反応管の内壁を前記水銀に付与した電荷と同一極性に
帯電させるための電極を設けたことを特徴とする請求項
1記載の気相エピタキシャル成長装置。2. A means for imparting an electric charge to mercury dispersed into a carrier gas in the form of fine particles, and
2. The vapor phase epitaxial growth according to claim 1, wherein a gas introduction tube through which the carrier gas containing mercury flows and an electrode for charging the inner wall of the reaction tube to the same polarity as the electric charge applied to the mercury are provided. apparatus.
状にしてキャリアガスに分散混合させる容器をガス導入
管に付設し、水銀を含むキャリアガスと、エピタキシャ
ル成長ガスを含むキャリアガスとをガス導入管を通じて
反応管内に導入し、該反応管内に収容されたサセプタ上
の基板を加熱して前記水銀を含むキャリアガスとエピタ
キシャル成長ガスを含むキャリアガスとを反応させて基
板上に水銀を含む化合物半導体のエピタキシャル結晶を
成長する装置であって、 前記水銀を微粒子状にしてキャリアガスに分散させる領
域に、該キャリアガスに分散した水銀に電荷を付与する
手段を設けると共に、該水銀を含むキャリアガスが流通
するガス導入管および反応管の内壁を前記水銀に付与し
た電荷と同一極性に帯電させるための電極を設けたこと
を特徴とする気相エピタキシャル成長装置。3. A container for accommodating mercury, in which mercury is made into fine particles by ultrasonic vibration and dispersed and mixed in a carrier gas is attached to a gas introduction pipe, and a carrier gas containing mercury and a carrier gas containing epitaxial growth gas are provided. A compound containing mercury on the substrate, which is introduced into the reaction tube through the gas introduction tube, and which heats the substrate on the susceptor housed in the reaction tube to react the carrier gas containing mercury with the carrier gas containing epitaxial growth gas. An apparatus for growing an epitaxial crystal of a semiconductor, comprising a means for applying an electric charge to the mercury dispersed in the carrier gas in a region where the mercury is made into fine particles and dispersed in the carrier gas, and a carrier gas containing the mercury. An electrode for charging the inner walls of the gas introduction tube and the reaction tube through which the mercury flows to the same polarity as the electric charge applied to the mercury is provided. A vapor phase epitaxial growth apparatus characterized in that
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP63085836A JP2671367B2 (en) | 1988-04-06 | 1988-04-06 | Vapor phase epitaxial growth equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63085836A JP2671367B2 (en) | 1988-04-06 | 1988-04-06 | Vapor phase epitaxial growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01257337A JPH01257337A (en) | 1989-10-13 |
JP2671367B2 true JP2671367B2 (en) | 1997-10-29 |
Family
ID=13869943
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JP63085836A Expired - Lifetime JP2671367B2 (en) | 1988-04-06 | 1988-04-06 | Vapor phase epitaxial growth equipment |
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US6811651B2 (en) * | 2001-06-22 | 2004-11-02 | Tokyo Electron Limited | Gas temperature control for a plasma process |
JP6478103B2 (en) | 2015-01-29 | 2019-03-06 | 株式会社Flosfia | Film forming apparatus and film forming method |
US20160222511A1 (en) | 2015-01-29 | 2016-08-04 | Flosfia Inc. | Apparatus and method for forming film |
JP6875336B2 (en) | 2018-08-27 | 2021-05-26 | 信越化学工業株式会社 | Film formation method |
JP6934852B2 (en) | 2018-12-18 | 2021-09-15 | 信越化学工業株式会社 | Manufacturing method of gallium oxide film |
US20230151485A1 (en) | 2020-04-13 | 2023-05-18 | Shin-Etsu Chemical Co., Ltd. | Film forming apparatus and film forming method |
JP6925548B1 (en) | 2020-07-08 | 2021-08-25 | 信越化学工業株式会社 | Manufacturing method and film forming equipment for gallium oxide semiconductor film |
JPWO2022039017A1 (en) | 2020-08-20 | 2022-02-24 | ||
TW202235664A (en) | 2021-03-12 | 2022-09-16 | 日商信越化學工業股份有限公司 | Semiconductor device |
TW202236438A (en) | 2021-03-12 | 2022-09-16 | 日商信越化學工業股份有限公司 | Film formation device, film formation method, gallium oxide film, and laminate |
US20240124974A1 (en) | 2021-05-04 | 2024-04-18 | Shin-Etsu Chemical Co., Ltd. | Method of producing raw material solution, method of film-forming and production lot |
JPWO2023062889A1 (en) | 2021-10-14 | 2023-04-20 | ||
CN118235232A (en) | 2021-11-02 | 2024-06-21 | 信越化学工业株式会社 | Film forming apparatus, film forming method, oxide semiconductor film, and laminate |
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JPS5877041U (en) * | 1981-11-18 | 1983-05-24 | クラリオン株式会社 | Vaporizer for thin film vapor phase growth |
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