JP2000096242A - Liquid material vaporizing device - Google Patents

Liquid material vaporizing device

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Publication number
JP2000096242A
JP2000096242A JP10263671A JP26367198A JP2000096242A JP 2000096242 A JP2000096242 A JP 2000096242A JP 10263671 A JP10263671 A JP 10263671A JP 26367198 A JP26367198 A JP 26367198A JP 2000096242 A JP2000096242 A JP 2000096242A
Authority
JP
Japan
Prior art keywords
liquid material
liquid
vaporizer
heating plate
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10263671A
Other languages
Japanese (ja)
Inventor
Naomi Yoshioka
尚規 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP10263671A priority Critical patent/JP2000096242A/en
Publication of JP2000096242A publication Critical patent/JP2000096242A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a liquid material vaporizing device for a CVD apparatus, capable of stably and efficiently performing film formation without leaving residual products generated at vaporization on a heating metal plate for vaporizing a metallic liquid material. SOLUTION: An organic metal or an organic metal dissolved in organic solvent is prepared in a liquid material vessel 20. The temperature of a heating plate 5 disposed in the upper part of a rotor 2 in a vaporizer chamber 1 is detected by a thermocouple 7 and set at a prescribed temperature, and simultaneously, the vaporizer chamber 1 is also held at a prescribed temperature by a heat holding heater 9. Subsequently, the number of rotations of a motor 4 from empirical data is determined according to the viscosity of the liquid material, and the rotor 2 is rotated by starting the motor 4. Then, the liquid material in the prescribed quantity is dropped onto the center of the heating plate 5 via a pipe 6 by controlling the flow rate of a pump 21 or an MFC 22. The liquid material on the heating plate 5 is spread in an outside peripheral direction by the centrifugal force of the rotor 2 and vaporized by heating while enlarging liquid surface.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液体材料気化装置
に係り、特にCVD成膜装置の液体材料気化装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid material vaporizer and, more particularly, to a liquid material vaporizer of a CVD film forming apparatus.

【0002】[0002]

【従来の技術】半導体デバイス製造工程において、MO
−CVD法が膜質や成膜速度、ステップカバレッジの点
で、スパッタ法等に比べて有利であることから盛んに利
用されている。MO−CVD法はIV属元素の熱分解気相
成長と考えられ、高温度で不安定な有機金属化合物及び
水素化合物を結晶成長の原料として用いるものである。
気相成長法により結晶成長を行なうには、エピタキシャ
ル温度以上に加熱された基板結晶の表面に、何らかの方
法で、目的とする結晶を構成する元素(ないしは元素を
含む化合物)を供給してやる必要がある。この結晶成長
原料の供給の方法には種々のものがあり、通常、水素雰
囲気中で加熱された基板上に、定温度で蒸気圧を制御し
た有機金属原料容器の中に、キャリア水素ガスをバブル
させ飽和量の有機金属を含む水素ガスと水素化合物を流
し、これらの原料気体の熱分解により化合物半導体を形
成することにより行われている。しかし、最近、制御性
や安定性の面でバブリング法や、昇華法よりもすぐれて
いる方法として、液体有機金属、または有機金属を溶剤
に溶かした液体材料を、反応槽直前で気化する方法が注
目されている。図2に、従来の液体材料気化装置を示
す。液体材料を容れた液体材料容器20と、その溶液を
移送する液体流量制御のためのポンプ21又はMFC
(マスフローコントローラ)22と、その間をつなぐ配
管のほかに、配管内の真空引きを行なうポンプ23と、
その系をパージするためのパージガスまたは原料気体を
流すキャリアガス27とその流量計28と、CVD反応
槽近くに設置された気化器24と、その気化器24内の
加熱器25と焼結金属26又は加熱金属板26とから構
成されたものである。この装置は液体材料容器20の液
体材料が送液ポンプ21とMFC22によって気化器2
4に送られ、内蔵している加熱された焼結金属26に液
体を染み込ませる。または加熱された多数の加熱金属板
26の隙間に液体を通過させる。または超音波を利用し
て超音波霧化を発生させる。超音波霧化法を除いて、い
ずれも加熱された金属上で液体の表面積を広げて気化の
効率を上げる構造である。そして、気化器24で発生し
た原料ガスを流量計28を介してキャリアガス27と共
にCVD反応槽に送り込む。
2. Description of the Related Art In a semiconductor device manufacturing process, an MO
-The CVD method is actively used because it is more advantageous than the sputtering method in terms of film quality, film formation rate, and step coverage. The MO-CVD method is considered to be a thermal decomposition vapor phase growth of a group IV element, and uses an organometallic compound and a hydrogen compound which are unstable at a high temperature as raw materials for crystal growth.
In order to perform crystal growth by a vapor phase growth method, it is necessary to supply an element (or a compound containing an element) constituting a target crystal to the surface of a substrate crystal heated to an epitaxial temperature or higher by some method. . There are various methods for supplying this crystal growth raw material. Usually, a carrier hydrogen gas is bubbled into a metal organic material container whose vapor pressure is controlled at a constant temperature on a substrate heated in a hydrogen atmosphere. It is performed by flowing a hydrogen gas containing a saturated amount of an organic metal and a hydrogen compound, and forming a compound semiconductor by thermal decomposition of these raw material gases. However, recently, as a method superior to the bubbling method and the sublimation method in terms of controllability and stability, a method of vaporizing a liquid organic metal or a liquid material obtained by dissolving an organic metal in a solvent immediately before a reaction tank is used. Attention has been paid. FIG. 2 shows a conventional liquid material vaporizer. A liquid material container 20 containing a liquid material, and a pump 21 or MFC for controlling a liquid flow rate for transferring the solution.
(Mass flow controller) 22 and a pump 23 for evacuating the piping, in addition to the piping connecting the two,
A carrier gas 27 for flowing a purge gas or source gas for purging the system, a flow meter 28 for the carrier gas, a vaporizer 24 installed near the CVD reactor, a heater 25 in the vaporizer 24 and a sintered metal 26. Or, it is constituted by the heating metal plate 26. In this apparatus, a liquid material in a liquid material container 20 is supplied to a vaporizer 2 by a liquid feed pump 21 and an MFC 22.
4 and impregnates the liquid into the heated sintered metal 26 contained therein. Alternatively, the liquid is caused to pass through a gap between the heated plurality of heated metal plates 26. Alternatively, ultrasonic atomization is generated using ultrasonic waves. Except for the ultrasonic atomization method, all have structures that increase the surface area of the liquid on the heated metal to increase the efficiency of vaporization. Then, the raw material gas generated in the vaporizer 24 is sent to the CVD reaction tank together with the carrier gas 27 via the flow meter 28.

【0003】[0003]

【発明が解決しようとする課題】従来の液体材料気化装
置は以上のように構成されているが、この装置で使用さ
れる材料は、有機金属または有機金属を有機溶剤に溶か
した、常温で液体のものであり、熱的に不安定なものが
多く、気化を行なうための熱エネルギーは瞬時に液体材
料に与えることが必要である。例えば、次世代DRAM
キャパシタとしての高誘電体膜としてBST材料が注目
されている。この材料の中でも例えはSrであれば、S
r(dpm)2という有機金属を有機溶剤に溶かした液
体とし、気化器で気化させてCVDに導入される。しか
し、この材料は加熱すると蒸発と分解が同時に進み、不
揮発性の化合物の残留生成物が発生しやすいことが知ら
れている。この不揮発性残留生成物が気化器24の焼結
金属又は加熱金属板26の上に残ると、新しい金属液体
材料を供給しても安定した気化が行なわれず、金属ガス
を安定してCVDに導入することができないという問題
がある。
The conventional liquid material vaporizer is constructed as described above, and the material used in this device is an organic metal or a liquid obtained by dissolving an organic metal in an organic solvent at room temperature. Many of them are thermally unstable, and it is necessary to instantaneously apply heat energy for vaporization to the liquid material. For example, next-generation DRAM
BST materials have attracted attention as high dielectric films as capacitors. Among these materials, for example, if Sr, S
A liquid obtained by dissolving an organic metal of r (dpm) 2 in an organic solvent is vaporized by a vaporizer and introduced into CVD. However, it is known that when this material is heated, evaporation and decomposition proceed simultaneously, and a residual product of a non-volatile compound is easily generated. If the non-volatile residual product remains on the sintered metal or the heated metal plate 26 of the vaporizer 24, stable vaporization is not performed even when a new metal liquid material is supplied, and the metal gas is stably introduced into the CVD. There is a problem that you can not.

【0004】本発明は、このような事情に鑑みてなされ
たものであって、金属液体材料を気化する時に加熱金属
板上に不揮発性残留生成物が残らない液体材料気化装置
を提供することを目的とする。
The present invention has been made in view of such circumstances, and an object of the present invention is to provide a liquid material vaporizing apparatus in which non-volatile residual products do not remain on a heated metal plate when a metal liquid material is vaporized. Aim.

【0005】[0005]

【課題を解決するための手段】上記の目的を達成するた
め、本発明の液体材料気化装置は、複数または単液の液
体金属材料を定量気化してCVD成膜装置に供給する液
体材料気化装置において、保温された気化器内に設置さ
れた回転可能な加熱板に液体材料供給部からパイプで液
体材料を滴下し、回転加熱板の遠心力によって液体材料
を外周方向に広げ気化させるものである。
In order to achieve the above object, a liquid material vaporizer according to the present invention comprises a liquid material vaporizer for quantitatively vaporizing a plurality of or single liquid metal materials and supplying the vapor to a CVD film forming apparatus. In the above, the liquid material is dropped from a liquid material supply unit with a pipe onto a rotatable heating plate installed in a kept vaporizer, and the liquid material is spread and vaporized in the outer peripheral direction by centrifugal force of the rotating heating plate. .

【0006】本発明の液体材料気化装置は上記のように
構成されており、加熱板を回転させることによりその遠
心力によって液体材料を外周方向に広げ気化させる。同
時に気化時に発生する不揮発性残留生成物は回転加熱板
の外方向に散らされ、気化器内壁に散留し、常に回転加
熱板上で新しい液体材料が安定して気化することができ
る。
The liquid material vaporizing apparatus of the present invention is configured as described above. By rotating the heating plate, the liquid material is spread outwardly by the centrifugal force and vaporized. Simultaneously, the non-volatile residual products generated during the vaporization are scattered to the outside of the rotary heating plate and scattered on the inner wall of the vaporizer, so that the new liquid material can always be stably vaporized on the rotary heating plate.

【0007】[0007]

【発明の実施の形態】本発明の液体材料気化装置の一実
施例を図1を参照しながら説明する。本装置は、液体材
料供給部と液体材料を気化する気化器とから構成され、
液体供給部は液体材料容器20とその液体材料を移送・
制御するポンプ21又はMFC22とからなり、気化器
は気化チャンバ1(上部蓋1aと中部円筒部1bと下部
基台1c)と、内部に回転体2と、その回転体2を回転
させる回転駆動部から構成されている。気化チャンバ1
は内壁に気化した分子が付着しないように外壁を保温ヒ
ータ9で一定温度に温められている。また内部をクリー
ンに保つために気化チャンバ1をベーキングする役割も
かねている。その気化チャンバ1の内壁側の中部円筒部
1bと下部基台1cには、回転体2上で液体材料が気化
中に円周方向に飛び散る飛散物を気化チャンバ1の内壁
につかないように防着板12が設けられ、特に液体材料
の気化時に蒸発と分解が同時に進み、不揮発性の化合物
の残留生成物が発生し、この不揮発性残留生成物を回転
体2の円周方向に飛散させて、防着板12にあて、それ
が上方向に飛散しないように遮蔽板13を防着板12の
内側に設けている。回転体2は上部に熱伝導性の良い加
熱板5が設けられ、その裏面の内部にヒータ3が設けら
れて、導入端子リング8から電流が供給される。その温
度を加熱板5の中央の裏側に設けられた熱電対7が検知
して温度制御をしている。回転体2は気化チャンバ1の
内部と外部を、回転導入部10で回転シールされ、その
駆動はモータ4とカップリング11で連結されて行われ
る。そして、液体材料供給部から液体材料がパイプ6に
より供給され、そのパイプ6は先端部が回転体2の中心
部の上方に位置するように配置される。そのパイプ6か
ら加熱板5の中央に滴下された液体材料は加熱板5で気
化し、そのガスがパイプ14からCVD装置に送られ
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the liquid material vaporizer of the present invention will be described with reference to FIG. This device is composed of a liquid material supply unit and a vaporizer for vaporizing the liquid material,
The liquid supply unit transfers the liquid material container 20 and the liquid material.
The vaporizer comprises a pump 21 or an MFC 22 to be controlled, and the vaporizer comprises a vaporization chamber 1 (an upper lid 1a, a middle cylindrical portion 1b, and a lower base 1c), a rotating body 2 therein, and a rotation drive section for rotating the rotating body 2. It is composed of Vaporization chamber 1
The outer wall is heated to a constant temperature by a heater 9 so that vaporized molecules do not adhere to the inner wall. Also, it has a role of baking the vaporization chamber 1 to keep the inside clean. The middle cylindrical portion 1b and the lower base 1c on the inner wall side of the vaporization chamber 1 are prevented from adhering to the inner wall of the vaporization chamber 1 any scattered matter that the liquid material scatters in the circumferential direction on the rotating body 2 during vaporization. A plate 12 is provided, in particular, evaporation and decomposition proceed simultaneously at the time of vaporization of the liquid material, and a residual product of a non-volatile compound is generated. This non-volatile residual product is scattered in the circumferential direction of the rotating body 2, A shield plate 13 is provided inside the deposition-preventing plate 12 so as to prevent the scattering plate 12 from scattering upward. A heating plate 5 having good thermal conductivity is provided on the upper part of the rotating body 2, and a heater 3 is provided inside the back surface of the rotating body 2, and a current is supplied from an introduction terminal ring 8. The temperature is detected by a thermocouple 7 provided at the center rear side of the heating plate 5 to control the temperature. The rotating body 2 is rotatably sealed between the inside and the outside of the vaporization chamber 1 by a rotation introducing section 10, and its driving is performed by being connected to a motor 4 and a coupling 11. Then, a liquid material is supplied from the liquid material supply unit by a pipe 6, and the pipe 6 is arranged such that a tip end thereof is located above a center part of the rotating body 2. The liquid material dropped from the pipe 6 to the center of the heating plate 5 is vaporized by the heating plate 5, and the gas is sent from the pipe 14 to the CVD apparatus.

【0008】本装置の動作に付いて説明する。まず使用
される材料として、有機金属または有機金属を有機溶剤
に溶かし、液体材料容器20に準備する。気化チャンバ
1内の加熱板5の温度を熱電対7で検知して、所定の温
度になっていることを確かめる。同時に、気化チャンバ
1の保温ヒータ9によって気化チャンバ1が所定の温度
になっていることを装置の制御器(図示していない)で
確かめる。次にモータ4を液体材料の粘性に応じて回転
数(経験的なデータ)を決め回転させる。そして、CV
D装置側の準備がされていることを確認し、この状態で
パイプ6及びポンプ21の配管のバルブを開き、MFC
22又はポンプ21で流量を制御することで、所定量の
液体材料がパイプ6を介して、加熱板5の中央に滴下さ
れる。回転体2の回転による遠心力によって、外周方向
に液体は広がり、液体の表面積を広げながら下部のヒー
タ3の加熱による熱エネルギーによって気化される。こ
の時、液体が回転によって回転体2の外周に到着するま
でに気化するように液体の粘性によって回転数を調整し
て最適化する。この現象は気化チャンバ1の外側から窓
(図示していない)を通して観察することができる。加
熱時発生する残留生成物は、この回転体2の上面に残る
か、遠心力によって外周方向に飛ばされる。回転体2の
上部の接液面には熱伝導の良い加熱板5が取り付けられ
ており、また気化チャンバ1内には回転体2から飛ばさ
れた残留物が、気化チャンバ1のCVD装置側のパイプ
14の方向に行かないように、堰に相当する遮蔽板13
をつけた防着板12が設けられている。これらの板は、
メンテナンス時に取り外し、交換・洗浄を行なう。ま
た、これらの板は付着した生成物がダストとして剥がれ
落ちてCVD装置側に流れることを防ぐため、表面にブ
ラスト処理などを施してあり、また、外周の板について
は、反応が促進する上で、あえて使用する材料の触媒と
なる材料で構成されている。気化チャンバ1は外部から
保温ヒータ9で加熱保温されており、気化チャンバ1か
らのCVD装置へのパイプも同様に保温されているの
で、気化したガスが表面に付くことなしにパイプ14を
介してCVD装置側に流れる。
The operation of the apparatus will be described. First, as a material to be used, an organic metal or an organic metal is dissolved in an organic solvent, and the liquid material container 20 is prepared. The temperature of the heating plate 5 in the vaporization chamber 1 is detected by the thermocouple 7 to confirm that the temperature has reached a predetermined temperature. At the same time, it is confirmed by the controller (not shown) that the vaporization chamber 1 is at a predetermined temperature by the heat retaining heater 9 of the vaporization chamber 1. Next, the number of rotations (empirical data) is determined and rotated according to the viscosity of the liquid material. And CV
After confirming that the D device is ready, open the valves of the pipe 6 and the pipe of the pump 21 in this state, and
By controlling the flow rate by the pump 22 or 22, a predetermined amount of the liquid material is dropped onto the center of the heating plate 5 via the pipe 6. The liquid spreads in the outer peripheral direction due to the centrifugal force generated by the rotation of the rotating body 2, and is vaporized by thermal energy generated by heating the lower heater 3 while expanding the surface area of the liquid. At this time, the rotation speed is adjusted and optimized by the viscosity of the liquid so that the liquid is vaporized by the rotation until it reaches the outer periphery of the rotating body 2. This phenomenon can be observed from outside the vaporization chamber 1 through a window (not shown). Residual products generated at the time of heating remain on the upper surface of the rotating body 2 or are blown outward by centrifugal force. A heating plate 5 having good heat conductivity is attached to a liquid contact surface on the upper part of the rotator 2, and a residue blown from the rotator 2 in the vaporization chamber 1 is provided on the CVD apparatus side of the vaporization chamber 1. A shield plate 13 corresponding to a weir is provided so as not to go in the direction of the pipe 14.
Is provided. These boards are
Remove during maintenance and replace / clean. In addition, these plates are subjected to a blast treatment or the like in order to prevent the adhered products from peeling off as dust and flowing to the CVD device side. It is made of a material that serves as a catalyst for the material used. The vaporization chamber 1 is externally heated and maintained by a heat retention heater 9, and the pipe from the vaporization chamber 1 to the CVD apparatus is also kept warm, so that the vaporized gas passes through the pipe 14 without adhering to the surface. It flows to the CVD device side.

【0009】本装置の回転導入部10については、磁性
流体継手などを使用しているが、特に磁性流体継手であ
る必要はなく、他の回転体導入部10でも良い。また、
この回転体2はヒータ3及び熱電対7を内蔵しており、
回転時の電気的な伝達のために4列のスリップリングが
使われている。ヒータ3の構造についても、他にランプ
ヒータなどの輻射熱の利用や、電磁誘導加熱などでも良
い。モータ4については使用する材料の特性から、回転
数を最適化してしまえば固定回転でもよいが、可変であ
ることが望ましい。使用する材料によっては気化温度が
高く、回転体2の温度を上げて行なうが、滴下した液滴
が広がらずに、液滴と加熱板5との間に蒸気の断熱層が
できて、液滴に熱が伝わらず、液玉の状態で外周に飛ば
されることもある為、回転体2は滴下する中央部から外
周に向けて温度勾配を設ける方がよい。
Although a magnetic fluid coupling or the like is used for the rotation introducing section 10 of the present apparatus, it is not particularly required to be a magnetic fluid coupling, and another rotating body introducing section 10 may be used. Also,
This rotating body 2 has a built-in heater 3 and thermocouple 7,
Four rows of slip rings are used for electrical transmission during rotation. As for the structure of the heater 3, the use of radiant heat from a lamp heater or the like, or electromagnetic induction heating may be used. The motor 4 may be fixed rotation if the rotation speed is optimized from the characteristics of the material used, but is preferably variable. Depending on the material to be used, the vaporization temperature is high and the temperature of the rotating body 2 is increased. However, the dropped droplets do not spread, and a heat insulating layer of vapor is formed between the droplets and the heating plate 5 to form droplets. Since the heat may not be transmitted to the rotating body 2 and the liquid body may be blown to the outer periphery in a liquid ball state, it is better to provide the rotating body 2 with a temperature gradient from the central part where the liquid drops to the outer periphery.

【0010】上記実施例では液体材料以外にキャリアガ
スを示さなかったが、用途によって使用したい場合は当
然導入可能であり、ガスの吹出し位置は生成物を吹き上
げない位置とすることが必要となる。
[0010] In the above embodiment, no carrier gas is shown other than the liquid material. However, if it is desired to use it depending on the application, it can be introduced naturally, and the gas must be blown out at a position where the product is not blown up.

【0011】[0011]

【発明の効果】本発明の液体材料気化装置は上記のよう
に構成されているので、気化器において、加熱された回
転体に液体材料を滴下し、遠心力によって材料の表面積
を広げることで気化の効率を上げることができる。同時
に、加熱時に発生した不揮発性生成物も遠心力によつて
外周方向へ散留させて、気化器からCVD装置側ヘ流し
にくい構造とすることで、成膜の安定性を得ることがで
き、気化器のメンテナンスも容易になる。
The liquid material vaporizer of the present invention is constructed as described above. In the vaporizer, the liquid material is dropped on the heated rotating body, and the surface area of the material is increased by centrifugal force. Efficiency can be improved. At the same time, non-volatile products generated at the time of heating are also dispersed in the outer peripheral direction by centrifugal force, so that the structure is difficult to flow from the vaporizer to the CVD device side, so that the stability of film formation can be obtained. Maintenance of the vaporizer is also facilitated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の液体材料気化装置の一実施例を示す
図である。
FIG. 1 is a diagram showing one embodiment of a liquid material vaporizer of the present invention.

【図2】 従来の液体材料気化装置を示す図である。FIG. 2 is a view showing a conventional liquid material vaporizer.

【符号の説明】[Explanation of symbols]

1…気化チャンバ 1a…上部蓋 1b…中部円筒部 1c…下部基台 2…回転体 3…ヒータ 4…モータ 5…加熱板 6…パイプ 7…熱電対 8…導入端子リング 9…保温ヒータ 10…回転導入部 11…カップリ
ング 12…防着板 13…遮蔽板 14…パイプ 20…液体材料
容器 21…ポンプ 22…MFC 23…ポンプ 24…気化器 25…加熱器 26…焼結金属
又は加熱金属板 27…キャリアガス又はパージガス 28…流量計
DESCRIPTION OF SYMBOLS 1 ... Vaporization chamber 1a ... Upper lid 1b ... Middle cylindrical part 1c ... Lower base 2 ... Rotary body 3 ... Heater 4 ... Motor 5 ... Heating plate 6 ... Pipe 7 ... Thermocouple 8 ... Introducing terminal ring 9 ... Heating heater 10 ... Rotation introduction part 11 Coupling 12 Deposition plate 13 Shield plate 14 Pipe 20 Liquid material container 21 Pump 22 MFC 23 Pump 24 Vaporizer 25 Heater 26 Sintered metal or heated metal plate 27 ... Carrier gas or purge gas 28 ... Flow meter

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】複数または単液の液体金属材料を定量気化
してCVD成膜装置に供給する液体材料気化装置におい
て、気化器内に設置された回転可能な加熱板に液体材料
供給部からパイプで液体材料を滴下し、回転加熱板の遠
心力によって液体材料を外周方向に広げ気化させること
を特徴とする液体材料気化装置。
1. A liquid material vaporizer for quantitatively vaporizing a plurality of or single liquid metal materials and supplying the vaporized liquid metal material to a CVD film forming apparatus. A liquid material vaporizer characterized in that a liquid material is dropped by means of a liquid heating device, and the liquid material is spread and vaporized in the outer peripheral direction by centrifugal force of a rotary heating plate.
JP10263671A 1998-09-17 1998-09-17 Liquid material vaporizing device Pending JP2000096242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10263671A JP2000096242A (en) 1998-09-17 1998-09-17 Liquid material vaporizing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10263671A JP2000096242A (en) 1998-09-17 1998-09-17 Liquid material vaporizing device

Publications (1)

Publication Number Publication Date
JP2000096242A true JP2000096242A (en) 2000-04-04

Family

ID=17392735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10263671A Pending JP2000096242A (en) 1998-09-17 1998-09-17 Liquid material vaporizing device

Country Status (1)

Country Link
JP (1) JP2000096242A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006137719A1 (en) * 2005-06-24 2006-12-28 Eugene Technology Co., Ltd. Cvd apparatus which has rotation type heater and the control method
KR101217517B1 (en) * 2007-11-30 2013-01-02 (주)에이디에스 Apparatus for injecting deposition meterial and apparatus for depositing thin film having the same
JP2015062254A (en) * 2012-07-30 2015-04-02 株式会社日立国際電気 Vaporizer, substrate processing device, and manufacturing method of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006137719A1 (en) * 2005-06-24 2006-12-28 Eugene Technology Co., Ltd. Cvd apparatus which has rotation type heater and the control method
KR100698404B1 (en) 2005-06-24 2007-03-23 주식회사 유진테크 CVD apparatus which has rotation type Heater and the control method
US8585823B2 (en) 2005-06-24 2013-11-19 Eugene Technology Co., Ltd. CVD apparatus having a rotating heater
KR101217517B1 (en) * 2007-11-30 2013-01-02 (주)에이디에스 Apparatus for injecting deposition meterial and apparatus for depositing thin film having the same
JP2015062254A (en) * 2012-07-30 2015-04-02 株式会社日立国際電気 Vaporizer, substrate processing device, and manufacturing method of semiconductor device

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