JP2664589B2 - Multilayer wiring board - Google Patents

Multilayer wiring board

Info

Publication number
JP2664589B2
JP2664589B2 JP4124754A JP12475492A JP2664589B2 JP 2664589 B2 JP2664589 B2 JP 2664589B2 JP 4124754 A JP4124754 A JP 4124754A JP 12475492 A JP12475492 A JP 12475492A JP 2664589 B2 JP2664589 B2 JP 2664589B2
Authority
JP
Japan
Prior art keywords
layer
pattern
conductor
substrate
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4124754A
Other languages
Japanese (ja)
Other versions
JPH05327230A (en
Inventor
等 土屋
恭一 亀井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Denki Co Ltd
Original Assignee
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Denki Co Ltd filed Critical Sanyo Denki Co Ltd
Priority to JP4124754A priority Critical patent/JP2664589B2/en
Publication of JPH05327230A publication Critical patent/JPH05327230A/en
Application granted granted Critical
Publication of JP2664589B2 publication Critical patent/JP2664589B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、800MHz以上の高
周波信号のための薄型他層基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin multi-layer substrate for high frequency signals of 800 MHz or more.

【0002】[0002]

【従来の技術】高周波信号の伝送線路には同軸線路など
種々の伝送線路があるが、一般には図3に示すような両
面基板1に線路パターン2をエッチングにより形成し、
基板裏面グランドパターン3とで伝送線路を構成したマ
イクロストリップ線路が用いられるのが一般的である。
2. Description of the Related Art There are various transmission lines such as coaxial lines as transmission lines for high-frequency signals. In general, a line pattern 2 is formed on a double-sided substrate 1 by etching as shown in FIG.
Generally, a microstrip line in which a transmission line is constituted by the ground pattern 3 on the back surface of the substrate is used.

【0003】高周波回路では分布定数回路による設計手
法が求められ、回路パターンの特性インピーダンスを考
慮した回路設計を行う必要がある。そして、高周波回路
では各回路の入出力インピーダンスを50Ωで設計する
のが一般的で、使用する伝送線路もインピ−ダンス整合
をとるために特性インピーダンスが50Ωになるようパ
ターンを設計している。このマイクロストリップ線路の
特性インピーダンスは基板の誘電体の誘電率、誘電体
厚、導体の伝送線路幅および導体厚により決定される
が、これを理論的に厳密に解析することは容易でなく様
々な近似式が発表されている。近似式の例として、H.
A.Wheelerが算出した式を以下に示す。すなわ
ち、線路パターン2の線路幅をW、厚みをt、線路パタ
ーン2からグランドパターン3までの距離をh、基板の
比誘電率をεとすると、特性インピーダンスZ0は次式
で示される。
In a high-frequency circuit, a design method using a distributed constant circuit is required, and it is necessary to design a circuit in consideration of the characteristic impedance of a circuit pattern. In a high-frequency circuit, the input / output impedance of each circuit is generally designed to be 50Ω, and the transmission line used is also designed to have a characteristic impedance of 50Ω for impedance matching. The characteristic impedance of this microstrip line is determined by the dielectric constant of the dielectric of the substrate, the dielectric thickness, the transmission line width of the conductor, and the conductor thickness. An approximate expression has been published. As an example of the approximate expression, H. K.
A. The equation calculated by Wheeler is shown below. That is, if the line width of the line pattern 2 is W, the thickness is t, the distance from the line pattern 2 to the ground pattern 3 is h, and the relative permittivity of the substrate is ε, the characteristic impedance Z 0 is expressed by the following equation.

【0004】[0004]

【数1】 (Equation 1)

【0005】数1によれば、基板厚0.8mm、誘電率
4.8のガラスエポキシ基板では特性インピーダンス5
0Ωの線路幅は1.4mmになる。
According to equation (1), a glass epoxy substrate having a substrate thickness of 0.8 mm and a dielectric constant of 4.8 has a characteristic impedance of 5
The line width of 0Ω is 1.4 mm.

【0006】近年、高密度実装と機器の小型化を目的と
して活用されている多層基板に高周波回路を構成する場
合、例えば図4に示すような4層基板を例にとると、表
層に電子部品5を実装するためのパタ−ン、および信号
の伝送線路パターン6を形成し、2層目にグランドパタ
ーン7を形成、3層目に各種信号の伝送線路8を形成
し、裏面層にグランドパターン9を形成する形が一般的
である。つまり、表層パターン6と2層目グランドパタ
ーン7でマイクロストリップ線路を構成し、2層目グラ
ンドパターン7で表層回路と3層目伝送線路8の干渉を
抑圧する構成となる。4は誘電体基板である。
In recent years, when a high-frequency circuit is formed on a multi-layer substrate which has been utilized for the purpose of high-density mounting and miniaturization of equipment, for example, taking a four-layer substrate as shown in FIG. 5, a signal transmission line pattern 6 is formed, a ground pattern 7 is formed on a second layer, various signal transmission lines 8 are formed on a third layer, and a ground pattern is formed on a back layer. Form 9 is common. That is, the microstrip line is configured by the surface layer pattern 6 and the second-layer ground pattern 7, and the interference between the surface layer circuit and the third-layer transmission line 8 is suppressed by the second-layer ground pattern 7. Reference numeral 4 denotes a dielectric substrate.

【0007】ところで、小型・軽量を要求される機器で
は多層基板の基板厚は薄いことが求められるため多層基
板の板厚は4層トータルで0.4〜1.0mmのものがよ
く用いられるが、この場合各層間の誘電体4の厚さは
0.1〜0.3mmと、従来の両面基板の誘電体の厚みと
比べて非常に薄くなる。このため、例えば誘電体厚が
0.25mmの4層ガラスエポキシ基板(誘電率ε=4.
8)では表層に形成する特性インピーダンス50Ωのマ
イクロストリップ線路の線路幅は0.4mmになる。と
ころが、表層線路はそのパターン上に部品5を実装する
必要があり、半田付け精度、及び強度の面から、線路は
一定幅以上にする必要がある。例えば、一般的に160
8型と呼ばれる、横幅が0.8mmのチップ部品の場
合、線路幅はチップの横幅の0.8mm以上必要である
とされている。
[0007] By the way, in a device which is required to be small and lightweight, the thickness of the multilayer substrate is required to be small. Therefore, a multilayer substrate having a total thickness of 0.4 to 1.0 mm is often used. In this case, the thickness of the dielectric 4 between the respective layers is 0.1 to 0.3 mm, which is extremely smaller than the thickness of the dielectric of the conventional double-sided board. Therefore, for example, a four-layer glass epoxy substrate having a dielectric thickness of 0.25 mm (dielectric constant ε = 4.
In 8), the line width of the microstrip line having a characteristic impedance of 50Ω formed on the surface layer is 0.4 mm. However, it is necessary to mount the component 5 on the pattern of the surface layer line, and the line needs to have a certain width or more in view of soldering accuracy and strength. For example, typically 160
In the case of a chip component having a width of 0.8 mm called type 8, it is said that the line width needs to be 0.8 mm or more of the width of the chip.

【0008】このように、従来の薄型多層基板では高周
波数信号を扱う場合、表層に形成した線路パターン幅
は、高周波特性の観点から考えると、実装部品の横幅
(K)よりもかなり狭い線路幅(本例では0.4mm)にす
る必要があるが、実際には部品を実装する必要があるた
め、線路幅は50Ω特性インピーダンス線路よりもかな
り広くなる。一般的には0.8mm以上必要であり、こ
の場合の特性インピーダンスは、本基板条件では約33
Ωとなり、この結果、従来の薄型多層基板に高周波回路
を形成した場合、伝送線路の特性インピーダンスの乱れ
により良好な高周波性能が得られないという問題があっ
た。
As described above, when a high-frequency signal is handled in the conventional thin multilayer board, the width of the line pattern formed on the surface layer is considered to be the width of the mounted component from the viewpoint of high-frequency characteristics.
Although it is necessary to make the line width considerably smaller than (K) (0.4 mm in this example), actually, it is necessary to mount components, so that the line width is considerably wider than the 50Ω characteristic impedance line. Generally, it is required to be 0.8 mm or more. In this case, the characteristic impedance is about 33
As a result, when a high-frequency circuit is formed on a conventional thin multilayer substrate, there has been a problem that good high-frequency performance cannot be obtained due to disturbance of the characteristic impedance of the transmission line.

【0009】[0009]

【発明が解決しようとする課題】本発明は上述の従来技
術の問題点を改善するためになされたものであり、多層
基板の高周波特性を損なうことなく、薄型化を図る事を
目的とするものである。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and has as its object to reduce the thickness of a multilayer substrate without deteriorating the high-frequency characteristics. It is.

【0010】[0010]

【課題を解決するための手段】本発明は、高周波数信号
を扱う誘電体基板の内層に回路配線等を形成した多層基
板において、回路部品を実装する表層導体に形成する信
号伝送線路パターンと内層導体パターンの距離を表層導
体と裏層導体グランドパタ−ンとの距離以上に保つよう
内層導体パターンを形成したことを特徴とするものであ
る。
SUMMARY OF THE INVENTION The present invention relates to a signal transmission line pattern formed on a surface conductor on which a circuit component is mounted, and a signal transmission line pattern formed on an inner layer of a multi-layer substrate having circuit wiring and the like formed on an inner layer of a dielectric substrate for handling high-frequency signals. An inner layer conductor pattern is formed so as to keep the distance of the conductor pattern longer than the distance between the surface conductor and the back layer conductor ground pattern.

【0011】[0011]

【作用】本発明によれば、伝送線路の幅を制限すること
なく、50Ω特性インピーダンス線路の設計を行うこと
ができる。
According to the present invention, a 50Ω characteristic impedance line can be designed without limiting the width of the transmission line.

【0012】[0012]

【実施例】図1は本発明を、4層の薄型多層基板に用い
た実施例を示したものである。表層には電子部品10を
実装するためのパタ−ン、および信号の伝送線路パター
ン11を形成し、2層目にグランドパターン12を形
成、3層目に各種信号の伝送線路13を形成し、裏面層
にグランドパターン14を形成する。これにより、表層
パターン6と2層目グランドパターン7でマイクロスト
リップ線路を構成し、2層目グランドパターン7で表層
回路と3層目伝送線路8の干渉を抑圧する構成となる。
15は誘電体基板である。ここで、2層目のグランドパ
ターン12の一部、すなわち表層の伝送線路パターン1
1の中心から裏面グランドパターン14までの距離hを
半径とする範囲にはいる部分のパターンを除去するとと
もに、3層目の伝送線路13をこの範囲を避けて配置す
る。これによって、表層線路パターン11と2層目のグ
ランドパターン12および3層目の伝送線路13との距
離を、表層線路パターン11と裏面グランドパターン1
4の距離以上に保つよう配置する。
FIG. 1 shows an embodiment in which the present invention is applied to a four-layer thin multilayer substrate. A pattern for mounting the electronic component 10 and a signal transmission line pattern 11 are formed on the surface layer, a ground pattern 12 is formed on the second layer, and transmission lines 13 for various signals are formed on the third layer. The ground pattern 14 is formed on the back surface layer. Thus, a microstrip line is formed by the surface layer pattern 6 and the second-layer ground pattern 7, and interference between the surface layer circuit and the third-layer transmission line 8 is suppressed by the second-layer ground pattern 7.
Reference numeral 15 denotes a dielectric substrate. Here, a part of the ground pattern 12 of the second layer, that is, the transmission line pattern 1 of the surface layer
The portion of the pattern which is within a range having a distance h from the center of 1 to the back surface ground pattern 14 as a radius is removed, and the transmission line 13 of the third layer is arranged so as to avoid this range. As a result, the distance between the surface layer line pattern 11 and the second-layer ground pattern 12 and between the surface layer line pattern 11 and the back-side ground pattern 1 are increased.
4 so that the distance is kept at least.

【0013】このことにより表層線路パターン11と裏
層グランドパターン14とでマイクロストリップ線路が
構成され、誘電体15の厚みが従来例の多層基板に対し
3倍厚くとれることになり、50Ω伝送線路の線路幅は
従来の多層基板に比べて広くなる(内部導体厚を0.03
5mmとして考慮すれば本例では50Ω線路幅は1.4
mmになる)。
As a result, a microstrip line is constituted by the surface layer line pattern 11 and the back layer ground pattern 14, and the thickness of the dielectric 15 can be made three times as thick as that of the conventional multilayer substrate. The line width is wider than that of the conventional multilayer substrate (the inner conductor thickness is 0.03).
Considering 5 mm, in this example, the line width of 50Ω is 1.4.
mm).

【0014】本構成にすることにより薄型多層基板でも
50Ω特性インピーダンス線路の線路幅を部品実装が可
能な幅以上に広くすることができるため薄型多層基板に
より良好な特性の高周波回路を構成することができる。
With this configuration, the line width of the 50 Ω characteristic impedance line can be made wider than the width at which components can be mounted even on a thin multilayer substrate, so that a high-frequency circuit having good characteristics can be constituted by the thin multilayer substrate. it can.

【0015】尚、本実施例では4層基板を例として説明
を行ったが4層以上を積層した多層基板においても同様
に良好な結果を得ることが可能である。例えば図2に示
すような6層基板で2層目、3層目の導体16、17
を、4層目グランドパターン18との距離以上に保つよ
う配置し表層と4層グランドパターン18でマイクロス
トリップ線路を形成することにより、表層の50Ω特性
インピーダンス線路の線路幅を部品実装可能な線路幅以
上とすることが可能であり良好な特性の高周波回路を構
成することができる。
In this embodiment, a four-layer substrate is described as an example, but a multilayer substrate having four or more layers can also obtain good results. For example, the conductors 16 and 17 in the second and third layers of a six-layer substrate as shown in FIG.
Is arranged so as to be at least the distance from the fourth-layer ground pattern 18, and a microstrip line is formed by the surface layer and the fourth-layer ground pattern 18, so that the line width of the 50Ω characteristic impedance line on the surface layer can be mounted on parts. The above can be achieved, and a high-frequency circuit having excellent characteristics can be formed.

【0016】なお、本考案は高周波信号を扱う回路パタ
ーン部分について適応すればよくその他の基板個所では
従来通り内層に伝送線路を構成することが可能であり多
層基板本来の立体配線という特質を損なうものではな
い。
The present invention only needs to be applied to a circuit pattern portion for handling a high-frequency signal. In other substrate portions, a transmission line can be formed in an inner layer as before, and the characteristic of a three-dimensional wiring inherent in a multilayer substrate is impaired. is not.

【0017】[0017]

【発明の効果】従来の薄型多層基板では表層と2層目導
体でマイクロストリップ線路を構成するため誘電体層厚
が非常に薄く、このため表層に部品実装が可能な線路幅
で線路を構成すると線路の特性インピーダンスが50Ω
でなくなり基板上に構成した高周波回路の性能が劣化す
るという問題があったが、本発明によれば薄型多層基板
において部品実装が可能な線路幅で線路パターンの特性
インピーダンスを50Ωとすることができるため良好な
特性の高周波回路を構成することが可能となる。
According to the conventional thin multi-layer substrate, a microstrip line is constituted by a surface layer and a second layer conductor, so that the thickness of the dielectric layer is extremely thin. Therefore, if the line is constituted by a line width capable of mounting components on the surface layer. Line characteristic impedance is 50Ω
However, according to the present invention, it is possible to set the characteristic impedance of the line pattern to 50Ω at a line width at which components can be mounted on a thin multilayer substrate. Therefore, a high-frequency circuit having good characteristics can be formed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本考案による4層薄型多層基板のを示す図であ
る。
FIG. 1 is a diagram showing a four-layer thin multilayer substrate according to the present invention.

【図2】本発明による6層薄型多層基板のを示す図であ
る。
FIG. 2 is a view showing a six-layer thin multilayer substrate according to the present invention.

【図3】従来の薄型多層基板を示す図である。FIG. 3 is a view showing a conventional thin multilayer substrate.

【図4】従来の薄型多層基板を示す図である。FIG. 4 is a view showing a conventional thin multilayer substrate.

【符号の説明】[Explanation of symbols]

10 回路部品 11 表層信号伝送線路パターン 12 2層目グランドパターン 13 3層目伝送線路パターン 14 裏面グランドパターン 15 誘電体 DESCRIPTION OF SYMBOLS 10 Circuit component 11 Surface signal transmission line pattern 12 Second layer ground pattern 13 Third layer transmission line pattern 14 Backside ground pattern 15 Dielectric

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 高周波数信号を扱う誘電体基板の内層に
回路配線等を形成した多層基板において、回路部品を実
装する表層導体に形成する信号伝送線路パターンと内層
導体パターンの距離を表層導体と裏層導体グランドパタ
−ンとの距離以上に保つよう内層導体パターンを形成し
たことを特徴とする薄型多層基板。
1. A multi-layer substrate having circuit wiring and the like formed on an inner layer of a dielectric substrate for handling high-frequency signals, wherein a distance between a signal transmission line pattern formed on a surface conductor on which circuit components are mounted and an inner conductor pattern is determined by the distance between the surface conductor and the inner conductor. A thin multi-layer substrate having an inner conductor pattern formed so as to keep the distance from a back conductor ground pattern or more.
【請求項2】 高周波数信号を扱う誘電体基板の内層に
回路配線等を形成した4層多層基板において、回路部品
を実装する表層導体に形成する信号伝送線路パターンと
内層導体パターンの距離を表層導体と裏層導体グランド
パタ−ンとの距離以上に保つよう内層導体パターンを形
成したことを特徴とする薄型多層基板。
2. A distance between a signal transmission line pattern formed on a surface conductor on which a circuit component is mounted and an inner conductor pattern in a four-layer multi-layer substrate in which circuit wiring and the like are formed on an inner layer of a dielectric substrate for handling high-frequency signals. A thin multilayer board having an inner conductor pattern formed so as to maintain the distance between a conductor and a back conductor ground pattern.
【請求項3】 高周波数信号を扱う誘電体基板の内層に
回路配線等を形成した5層以上の多層基板において、回
路部品を実装する表層導体に形成する信号伝送線路パタ
ーンと2、3層の内層導体パターンの距離を表層導体と
4層導体グランドパターンの距離以上に保つよう内層導
体パターンを形成したことを特徴とする薄型多層基板。
3. A signal transmission line pattern formed on a surface conductor on which a circuit component is mounted, and a signal transmission line pattern formed on two or three layers of a multi-layer substrate having five or more layers in which circuit wiring and the like are formed on an inner layer of a dielectric substrate for handling high-frequency signals. A thin multilayer board having an inner conductor pattern formed so as to keep the distance between the inner conductor pattern and the distance between the surface conductor and the four-layer conductor ground pattern or more.
JP4124754A 1992-05-18 1992-05-18 Multilayer wiring board Expired - Lifetime JP2664589B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4124754A JP2664589B2 (en) 1992-05-18 1992-05-18 Multilayer wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4124754A JP2664589B2 (en) 1992-05-18 1992-05-18 Multilayer wiring board

Publications (2)

Publication Number Publication Date
JPH05327230A JPH05327230A (en) 1993-12-10
JP2664589B2 true JP2664589B2 (en) 1997-10-15

Family

ID=14893294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4124754A Expired - Lifetime JP2664589B2 (en) 1992-05-18 1992-05-18 Multilayer wiring board

Country Status (1)

Country Link
JP (1) JP2664589B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1727230B1 (en) * 2005-03-09 2012-05-23 Nippon Telegraph And Telephone Corporation Matrix switch
JP4730313B2 (en) 2007-01-24 2011-07-20 ミツミ電機株式会社 High frequency tuner module and tuner module
JP4984912B2 (en) 2007-01-24 2012-07-25 ミツミ電機株式会社 High frequency tuner module
JP6424811B2 (en) * 2015-12-22 2018-11-21 株式会社Soken Multilayer substrate and method of manufacturing the same

Also Published As

Publication number Publication date
JPH05327230A (en) 1993-12-10

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