JP2642462B2 - Substrate for matrix type display device and inspection and repair method - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for a matrix type display device suitably used for, for example, an active matrix type liquid crystal display device and the like, and an inspection and repair method.

2. Description of the Related Art Active matrix driving type liquid crystal using a display electrode substrate in which switching means such as thin film transistors (TFTs) are arranged in a matrix on a light-transmitting insulating substrate such as glass. In the case of a display device, the response speed of the liquid crystal is high, and the area of a light-transmitting insulating substrate used as a display electrode substrate is not limited, and the display device has advantages such as a reflection type and a transmission type. It is actively used in practice.

However, since the display electrode substrate has a complicated manufacturing process and is formed in a large area (therefore, the number of switching means is also large), it is difficult to form all the switching means without defects. The fact is that the manufacturing yield is low.

Therefore, in order to improve the production yield of the display electrode substrate, it is important to detect and correct a defective portion. As a method of detecting the defective portion, a prober is brought into direct contact with the bus line or the pixel electrode when the bus line serving as the signal electrode or the scanning electrode, the switching means, and the pixel electrode are formed on the insulating substrate. Conventionally, a stylus method for detecting a location, an inspection method for actually emitting light from the entire surface after sealing a liquid crystal, and the like have been adopted.

In addition, as an alternative to such an inspection method, recently,
An inspection method called an electrodeposition inspection method capable of quickly inspecting tens of thousands of switching means on a display electrode substrate has been developed. In this electrodeposition inspection method, a display electrode substrate and a counter electrode are immersed in an aqueous solution in which a predetermined polymer resin and a pigment are melted, and a constant DC voltage is applied between the display electrode substrate and the counter electrode. Then, the polymer resin and the pigment in the aqueous solution are precipitated on the voltage applying portion on the display electrode substrate by an electrolytic reaction. For example, the switching means formed on the display electrode substrate is a TFT, the source electrode of which is connected to a bus line serving as a signal electrode, the gate electrode is connected to a bus line serving as a scanning electrode, and the drain electrode is a picture element electrode. When the electrodeposition test was conducted under the condition that a voltage to turn off the TFT was applied to each bus line when connected to the It can be determined that the TFT connected to the elementary electrode has a leak defect. Conversely, if the electrodeposition test is performed under the condition that a voltage to turn on the TFT is applied to each bus line and the colored polymer resin film is not deposited on the pixel electrode, the pixel electrode It can be determined that there is a disconnection defect or ON failure in the TFT connected to the TFT.

In the above electrodeposition inspection method, all TFTs on the display electrode substrate
To turn on or off at the same time,
The ends of the bus lines serving as the signal electrodes are connected by a common signal electrode short-circuiting terminal, and the ends of the bus lines serving as the scanning electrodes are also connected by the common scanning electrode short-circuiting terminal.

Further, in a method of manufacturing a display electrode substrate that has been recently performed, a short ring is provided on a bus line on the display electrode substrate to prevent the switching means on the display electrode substrate from being broken by static electricity during the manufacturing process. , Are formed outside the formation area of the switching means.

FIG. 5 is a plan view showing an example of the surface structure of the display electrode substrate during the manufacturing process in which such a short ring 1 is formed. In FIG. 5 and FIG. 6, which will be described later, regions made of a material having a relatively small resistance value are indicated by hatching. In FIG. 5, a source bus line 2 is a bus line serving as a signal electrode, and a gate bus line 3
Are bus lines serving as scanning electrodes, which are arranged on an insulating substrate so as to three-dimensionally cross at a right angle to each other. In the vicinity of each intersection of the source bus line 2 and the gate bus line 3, a TFT 4 and a pixel electrode 5
Is formed, and the source electrode of TFT4 is the source bus line 2
The gate electrode is connected to the gate bus line 3, and the drain electrode is connected to the pixel electrode 5. Also, one end of each of the odd-numbered source bus lines 2, the other end of each of the even-numbered source bus lines 2, one end of each of the odd-numbered gate bus lines 3, and the even-numbered gate bus lines The other end of each of the lines 3 is connected to the source bus line 2,
The gate bus line 3, the TFT 4, and the short ring 1 closed outside in a ring shape formed outside the formation region of the picture element electrode 5 are short-circuited to each other.

In this structure of the display electrode substrate, a short ring 1 for countermeasures against static electricity is composed of a source bus line 2 and a gate bus line 3.
Is formed of a material having the same low resistance as
In the inspection of defective parts by the above-mentioned electrodeposition inspection method,
As shown by the broken lines in FIG.
A, B, C, and D are disconnected, and odd-numbered source bus lines 2
A short ring fragment 1a shorting one end of each of them and a short ring fragment 1b shorting the other ends of the even-numbered source bus lines 2 are used as the above-mentioned signal electrode shorting terminals. In addition, a short ring fragment 1c that short-circuits one end of each of the odd-numbered gate bus lines 3 and a short ring fragment 1d that short-circuits the other end of each of the even-numbered gate bus lines 3 Are used as the scanning electrode short-circuiting terminals described above.

Problems to be Solved by the Invention However, in the above-described structure of the conventional display electrode substrate, when inspecting a defect portion by the electrodeposition inspection method,
The group of the source bus lines 2 and the group of the gate bus lines 3 which are short-circuited by the short ring 1 must be disconnected once, and when the above inspection is completed, the disconnected portions must be connected again. In addition, there is a problem that the manufacturing process becomes complicated.

In order to solve such a problem, the present inventor has proposed a sixth method.
As shown in the figure, one end of each of the odd-numbered source bus lines 2 is short-circuited by a common signal electrode short-circuiting terminal 6a, and the other end of each of the even-numbered source bus lines 2 is also connected to another common signal. One end of each of the odd-numbered gate bus lines 3 is short-circuited by the electrode short-circuiting terminal 6b, and one end of each of the odd-numbered gate bus lines 3 is short-circuited by the common scanning electrode short-circuiting terminal 7a. The short ring 8 made of a material having a high resistance such as phosphorus-doped amorphous silicon (having a specific resistance of 1 KΩ · cm) is connected to all the source buses. An attempt was made to cross the line 2 and the gate bus line 3.

In this case, the source bus line 2 and the gate bus line 3 (the specific resistance is 1 × 10 ⁻⁴ Ω · cm) are connected to the source bus line 2 and the gate connected by the short ring 8 having a sufficiently high resistance value. Between the bus lines 3, the voltage applied to the source bus line 2 and the gate bus line 3 for setting the TFT 4 to the ON state or the OFF state in the inspection of the defective portion by the electrode inspection method is electrically disconnected. Therefore, it is not necessary to cut the short ring 8 during the inspection. Also,
The short ring 8 acts as a short-circuit wire for short-circuiting between the source bus line 2 and the gate bus line 3 against the application of a high voltage due to static electricity that may destroy the TFT 4. It is working well.

However, in this case, since the short ring 8 is formed so as to intersect the source bus line 2 and the gate bus line 3, one of the wirings goes over the other wiring, and disconnection is likely to occur at the intersection. The problem remains. Further, since the short ring 8 is formed at a position shifted from the formation position of the signal electrode short-circuit terminals 6a and 6b and the scan electrode short-circuit terminals 7a and 7b, a large area is required to obtain one display electrode substrate. When multiple display electrode substrates are taken from one insulating substrate material,
There is also a problem that the number is reduced and the cost is high.

Further, in the above-described conventional structure of the display electrode substrate, in the inspection of the defective portion by the electrode inspection method, since a pigment such as violet is used as the pigment of the electrodeposition liquid, it is transparent for the transmission type display device. In the case of a display electrode substrate manufactured using an insulating substrate, the picture element electrode 5 connected to the TFT 4 having the leak defect is colored in the same violet color. In this case, even if there is only one leak defect, the picture element electrode 5 is merely colored in violet, so that when completed as a transmissive display device, the picture element at the defective location always emits light. As a result, the display quality is significantly reduced. Therefore, even if there is a leak defect at only one place, the display electrode substrate must be defective, which causes a problem of lowering the production yield.

Therefore, an object of the present invention is to provide a substrate for a matrix type display device and an inspection and repair method which can simplify the process and improve the production yield.

Means for Solving the Problems The present invention provides a plurality of first electrodes parallel to each other, a plurality of second electrodes extending in a direction intersecting the first electrodes, and a signal at the second electrodes on an electrically insulating substrate. Switching means that is provided for each of a plurality of unit regions that are turned on / off depending on the level and are surrounded by the first electrode and the second electrode;
In a matrix type display device substrate including a first electrode and a display electrode which is turned on / off via the switching means, a black pigment is applied to the display electrode connected to the switching means having a leak defect. A matrix type electrode, wherein black pigment is not electrodeposited and deposited on the display electrode which is deposited and corrected for defects and which is electrically connected / disconnected with the first electrode via switching means having no leak defect. It is a display device substrate.

Further, according to the present invention, a plurality of first electrodes parallel to each other, a plurality of second electrodes extending in a direction intersecting the first electrodes, and a signal level at the second electrodes are provided on the electrically insulating substrate.
A switching means is provided for each of a plurality of unit regions which are turned on / off and surrounded by the first electrode and the second electrode, and a display electrode which is turned on / off with the first electrode via the switching means. A method for inspecting and correcting an electrical connection state of a matrix type display device substrate, comprising: a matrix type display device substrate; and an inspection type test device arranged at an interval with respect to the matrix type display device substrate. A voltage for leak defect inspection is applied to the first electrode, the second electrode, and the counter electrode while the counter electrode is immersed in an electrodeposition solution containing a polymer resin and a black pigment ionized in an aqueous solution. Then, a black pigment is deposited on the display electrode connected to the switching means having a leak defect, and the black pigment electrodeposited on the display electrode is left behind to form a display device. A matrix type display device inspection method of correcting a substrate characterized in that to produce Te.

According to the present invention, a black pigment is deposited on the display electrode connected to the switching means having a leak defect by electrodeposition and the defect is corrected, so that the picture element corresponding to the display electrode is repaired. Can be prevented from constantly emitting light. Further, no black pigment is deposited by electrodeposition on the display electrode which is electrically connected / disconnected with the first electrode via the switching means having no leak defect, and the picture element can be displayed normally. In this way, the portion having the leak defect is substantially corrected, and the manufacturing yield is improved accordingly.

According to the present invention, the matrix-type display device substrate and the counter electrode arranged at an interval therewith, in a state of being immersed in an electrodeposition solution containing a polymer resin and a black pigment ionized in an aqueous solution, A voltage for detecting a leak defect is applied between the first electrode, the second electrode, and the counter electrode, and if there is a leak defect in the switching means that is normally shut off, a black pigment is deposited on the display electrode. Will be. This can prevent the display electrode from undesirably emitting light as described above.

According to the present invention, for a high voltage caused by, for example, static electricity or the like, the inspection member functions as a short-circuit wire for short-circuiting all the first electrodes and all the second electrodes, and the static electricity causes a gap between the electrodes. The switching means caused by the generated high voltage can be prevented from being destroyed. Therefore, the area required for manufacturing the matrix-type display substrate can be reduced as compared with a case where a short-circuit wiring for preventing static electricity is separately formed. Further, since the first electrode and the second electrode are not formed so as to intersect with the short-circuit wiring, it is possible to reduce the occurrence of disconnection defects as described in relation to the related art. In addition, in this inspection member, a high-resistance portion made of a material having a higher resistance value than these portions is interposed between the first conductive portion and the second conductive portion. In the inspection of a defective portion by the method, complicated operations such as cutting and connection of the inspection member can be omitted.

Further, according to the present invention, in the inspection of the defective portion by the electrodeposition inspection method, the display electrode connected to the switching means having the leak defect is colored black, so that the picture element corresponding to the display electrode is It is possible to prevent the light emitting state from being constantly emitted. In other words, the portion having the leak defect is substantially corrected, and the manufacturing yield is improved accordingly.

Embodiment FIG. 1 is a diagram showing a surface structure of a semi-finished matrix display substrate (hereinafter, referred to as a “display electrode substrate”) obtained during a manufacturing process in an embodiment of a method for manufacturing a display electrode substrate according to the present invention. FIG. In FIG. 1, hatched portions indicate portions made of a material having a relatively small electric resistance value. The structure shown in FIG. 1 is a structure of a display electrode substrate used in an active matrix driving type liquid crystal device,
At the stage of the semi-finished product of the display electrode substrate, as shown in FIG. 1, signal electrodes are formed on a transparent electrically insulating substrate such as glass, and a plurality of source bus lines 12 as a first electrode and scanning electrodes are formed. Plural gate bus lines 13 that are two electrodes
Are arranged so as to cross each other at right angles. In the vicinity of each intersection between the source bus line 12 and the gate bus line 13, a TFT 14 as a switching means and a pixel electrode 15 as a display electrode are formed, respectively.
The source electrode of T14 is connected to the source bus line 12, the gate electrode is connected to the gate bus line 13, and the drain electrode is connected to the pixel electrode 15. The above TFT 14 is the source bus line 12
And a switching means for controlling the application / non-application of the voltage to the picture element electrode 15 corresponding to each picture element of the liquid crystal display device based on the voltage applied through the gate bus line 13.

One end of each odd-numbered source bus line 12 is short-circuited by a common signal electrode short-circuiting terminal 16a, and one end of each even-numbered source bus line 12 is also connected to another common signal electrode short-circuiting terminal 16b. Is shorted by The signal electrode short-circuiting terminals 16a and 16b constitute a first conductive portion.

Similarly, one end of each of the odd-numbered gate bus lines 13 is short-circuited by a common scan electrode short-circuiting terminal 17a,
One end of each of the even-numbered gate bus lines 13 is also short-circuited by another common scan electrode short-circuiting terminal 17b. The scanning electrode short-circuiting terminals 17a and 17b constitute a second conductive portion.

The signal electrode short-circuiting terminals 16a and 16b and the scanning electrode short-circuiting terminals 17a and 17b have low resistance values (substantially 1 × 10 ^{−4) which} are almost the same as those of the source bus line 12 and the gate bus line 13.
(KΩ · cm). Therefore, the signal electrode short-circuiting terminals 16a, 16b and the scan electrode short-circuiting terminals 17a, 17b are the gate electrode or the source electrode of the TFT 14,
When forming the drain electrode, a pattern can be formed at the same time.

Further, between one end of the signal electrode short-circuiting terminal 16a and one end of the scan electrode short-circuiting terminal 17a close thereto, for example, a high resistance value of phosphorus-doped amorphous silicon (specific resistance is 1 KΩ · cm) And is connected by a high resistance wiring portion 18a which is a high resistance portion. Similarly, another high resistance wiring portion 18b connects between the other end of the signal electrode short-circuiting terminal 16a and one end of the scan electrode short-circuiting terminal 17b close thereto, and the other end of the scan electrode short-circuiting terminal 17b. Another high-resistance wiring portion 18c connects between the portion and the one end of the signal electrode short-circuiting terminal 16b close thereto, and further the other end of the signal electrode short-circuiting terminal 16b and the scanning electrode short-circuiting terminal 1 close thereto.
The other end of 7a is connected by another high resistance wiring section 18d. Thus, the source bus line 1
2.Outside the area where the gate bus line 13, TFT 14, and element electrode 15 are formed, signal electrode short-circuit terminals 16, 16b, scan electrode short-circuit terminals 17a, 17b, and high-resistance wiring section 1 so as to surround this area.
A short ring 11 is formed as a ring-shaped closed inspection member composed of 8a, 18b, 18c, and 18d. This short ring
Numeral 11 plays a role in preventing TFT 14 from being destroyed by static electricity. FIG. 2 is a sectional view of the short ring 11 taken along the line II-II in FIG. Short ring 11
The short ring is formed by forming
The intersection between the source bus line 11 and the source bus line 12 or the gate bus line 13 does not occur, so that the disconnection defect can be reduced.

The short ring 11 may be formed as follows in addition to the case where the short ring 11 is formed as described above. That is, the same high-resistance material as the high-resistance wiring portions 18a, 18b, 18c, and 18d is used to form a closed pattern in the same ring shape on the transparent insulating substrate as in FIG. Is what you do. Thereafter, the signal electrode short-circuiting terminals 16a and 16b and the scanning electrode short-circuiting terminals 17a and 17b shown in FIG. 1 are formed on the short ring 11. Of course, in this case, the same low-resistance material as in the previous case is used for the signal electrode short-circuit terminals 16a and 16b and the scan electrode short-circuit terminals 17a and 17b. FIG. 3 is a sectional view of the structure of the short ring 11 in this case, as viewed from the same position as in FIG. Also in this case, no intersection between the short ring 11 and the source bus line 12 or the gate bus line 13 occurs, so that a disconnection defect can be reduced. After the short ring 11 is thus formed, the signal electrode short-circuiting terminals 16a, 16b and the scan electrode short-circuiting terminals 17a, 17b may be formed, or conversely, the signal electrode short-circuiting terminals 16a, 16b and the scan electrode short-circuit. Terminals 17a, 1
After the formation of 7b, the high-resistance wiring portion may be formed. Also, the high-resistance wiring section and the signal electrode short-circuit terminals 16a, 16
b and the scanning electrode short-circuiting terminals 17a and 17b can also be formed by etching at the same time.

The semi-finished display electrode substrate thus obtained is then subjected to a defect inspection by an electrodeposition inspection method.

FIG. 4 is an explanatory view showing a defect inspection step which is a premise of the present invention. In FIG. 4, the electrodeposition tank 21 contains an ionized polymer resin (here, a carboxyl anion R · COO ⁻ ).
And a violet pigment, for example, are melted in an aqueous solution to be filled with the electrodeposition solution 22, and the display electrode substrate 260
And the counter electrode 23 are immersed.

Now, when the TFT 14 formed on the display electrode substrate 20 is an N channel, a leak defect, a disconnection defect, an ON defect, and the like of the TFT 14 are inspected by the following procedure.

(1) Signal electrode short-circuit terminals 16a and 16b of the display electrode substrate 20
(That is, the source bus line 12) has a DC power supply
Of the DC power supply 24 is connected to the counter electrode 23, and a leak defect inspection voltage is applied. At this time, the voltage applied between the display electrode substrate 20 and the counter electrode 23 causes an electrolytic reaction expressed by the following equation on the display electrode substrate 20.

2H ₂ O → 4H ⁺ + O ₂ ↑ + 4e ⁻ (1) R · COO ⁻ + H ⁺ → R · COOH (precipitation) (2) That is, the carboxyl anion R · CO in the electrodeposition solution 22
O ^- is deposited on the positive voltage application portion on the display electrode substrate 20 to form a polymer resin film. At this time, the pigment in the electrodeposition liquid 22 is attracted together with the polymer resin, and the deposited polymer resin film is colored violet. In this case, TFT1
If there is a leak defect in 4, a violet polymer resin film is electrodeposited on the picture element electrode 15 connected to the TFT 14, whereby a leak defect location is detected.

In the above inspection, the high resistance wiring portions 18a, 1
8b, 18c, 18d or the short ring 11, but in this case, when a voltage of about 30 V is applied, the signal electrode short-circuiting terminals 16a, 16b and the scanning electrode short-circuiting terminal 1
Since it can be considered that the area between 7a and 17b is insulated, the TFT 14 is cut off without cutting the area, and there is no problem in inspection.

(2) Next, the scanning electrode short-circuit terminals 17a and 17 of the display electrode substrate 20
The positive side of the DC power supply 24 is connected to b (that is, the gate bus line 13), and the negative side of the DC power supply 24 is connected to the counter electrode 23, and a leak defect inspection is performed as in the case of (1).

In this case, no voltage is applied to the signal electrode short-circuit terminals 16a and 16b. This is because if a voltage is applied to these terminals 16a and 16b, the normal TFT 14 conducts and it becomes impossible to inspect for a leak defect.

(3) Next, the signal electrode short-circuit terminal 16 of the display electrode substrate 20
While a positive voltage of about 30 V is applied to the a and 16 b by the DC power supply 24, a positive voltage of about 20 V lower than the threshold voltage of the TFT 14 by another DC power supply 25 to the scanning electrode short-circuiting terminals 17 a and 17 b. Is applied, and a leak defect is similarly inspected.

(4) With respect to the display electrode substrate 20 from which no leak defect has been detected by the above inspection, a disconnection and an ON defect are detected under the following voltage application conditions. That is,
A positive voltage of about 30 V is applied to the signal electrode short-circuit terminals 16a and 16b of the display electrode substrate 20 by the DC power supply 24, while the scan electrode short-circuit terminals 17a and 17b are applied to the TFT 14 by another DC power supply 25.
A positive voltage of about 30 V, which exceeds the threshold voltage, is applied. That is, a voltage application condition is set such that all the TFTs 14 of the display electrode substrate 20 are turned on. In this case, if the TFT 14 has a disconnection or an ON defect, or if there is a disconnection in the middle of the source bus line 12 or the gate bus line 13, the pixel electrode 15 connected to the TFT 14 having the disconnection or the ON defect or the bus line Since the colored polymer resin film is not electrodeposited on the picture element electrode 15 connected to the portion after the disconnection point, disconnection / on failure of the TFT 14 and disconnection of the source bus line 12 and the gate bus line 13 are caused. Is detected.

When the disconnection / on defect inspection is completed, the electrodeposited polymer resin film is peeled off with butyl cellosolve or the like, and further washed with isopropyl alcohol and pure water to complete the inspection process.

Also, even if static electricity that causes the TFT 4 to be destroyed is applied to the display electrode substrate 20 during the manufacturing process, at this time, the high-resistance wiring portions 18a, 18b, 18c, 18d or the short ring 11 made of a high-resistance material, Terminals 16a, 16 for shorting each signal electrode
The TFT 14 is protected from destruction due to static electricity because it is regarded as equivalent to a short circuit between b and the scan electrode short-circuit terminals 17a, 17b, that is, all the source bus lines 12 and the gate bus lines 13 are short-circuited. Will be.

Next, an embodiment of a method for manufacturing a display electrode substrate according to the present invention will be described. This embodiment uses a black pigment as the pigment in the electrodeposition liquid 22 used in the electrodeposition inspection method in the defect inspection step in the above-described configuration. In this case, the above-described inspection for disconnection / on failure in (4) is performed first, and the leakage defect inspection in (1) to (3) is performed later.
That is, for the display electrode substrate 20 in which no defect is detected in the inspection for disconnection / on failure in (4), the polymer resin film electrodeposited by the inspection is peeled off and further washed to perform a leak defect inspection. Will be

In this case, if the TFT 14 has a leak defect, a black polymer resin film is electrodeposited on the picture element electrode 15 connected to the TFT 14, thereby detecting the leak defect portion. This is not a problem when a leak defect is present at a plurality of locations. For example, when only one leak defect is present, the display electrode substrate 20 can be used as a non-defective product in a liquid crystal display device. Because, as described above, the black polymer resin film is electrodeposited on the pixel electrode 15 at the location of the leak defect, the pixel at that portion does not always emit light, and the display quality is degraded. Because it does not become. That is, in the above-described inspection of the leak defect, the leak defect is automatically corrected. From this,
The production yield of the display electrode substrate 20 is greatly improved. The other procedures and steps are the same as those in the above-described configuration, and a description thereof will not be repeated.

In the above embodiment, when the signal storage capacitors are formed on the display electrode substrate 20, the ends of the bus lines drawn from the signal storage capacitors are also connected to the short ring 11 described above.

Further, in the above embodiment, the case where the N-channel TFT 14 is formed as the switching means on the display electrode substrate 20 has been described. However, even in the case of the P-channel TFT, the defect inspection can be performed by the same process. The same applies to the case where a non-linear element is formed.

Effect of the Invention According to the present invention, a black pigment is electrodeposited and deposited on a display electrode connected to a switching unit having a leak defect, and the defect is corrected, so that the display electrode is always in a light emitting state. This can prevent the display quality from deteriorating and make corrections, thereby improving the manufacturing yield.

Further, according to the present invention, in the inspection of the defective portion by the electrodeposition inspection method, the black electrode is deposited by the electrodeposition on the display electrode connected to the switching means having the leak defect as described above. The defective portion can be inspected, and the leaked portion is substantially corrected, thereby improving the manufacturing yield.

Thus, according to the present invention, the first electrode and the second electrode are immersed in the electrodeposition liquid containing the ionized polymer resin and the black pigment in the aqueous solution, and the matrix type display device substrate and the counter electrode are immersed. Also, when a leak defect inspection voltage is applied to the counter electrode and the switching device that normally shuts off has a leak defect, the display electrode connected to the switching device having the leak defect has a black color. The pigment precipitates out, leaving it behind. Therefore, it is possible to prevent the display electrode from constantly emitting light, prevent the display quality from deteriorating, and make corrections as described above.

[Brief description of the drawings]

FIG. 1 is a plan view showing a structure of a display electrode substrate surface in the middle of a process of a method of manufacturing a display electrode substrate according to one embodiment of the present invention, FIG. 2 is a sectional view taken along the line II-II of FIG. 3 is a cross-sectional view of the display electrode substrate in a different embodiment viewed from the same position as in FIG. 2, FIG. 4 is an explanatory view showing a defect inspection step in a manufacturing method which is a premise of the present invention, and FIG. FIG. 6 is a plan view showing the structure of the surface of the display electrode substrate during the process of the method of manufacturing the display electrode substrate. FIG. 6 is a plan view showing the structure of the surface of the display electrode substrate during the process of another conventional method of manufacturing the display electrode substrate. is there. 11 ... short ring, 12 ... source bus line, 13 ...
... Gate bus line, 14 ... TFT, 15 ... Pixel electrode, 16
a, 16b: Signal electrode short-circuit terminal, 17a, 17b ... Scan electrode short-circuit terminal, 18a, 18b, 18c, 18d ... High-resistance wiring section, 20 ...
Display electrode substrate, 21 ... electrodeposition tank, 22 ... electrodeposition liquid, 23 ... counter electrode, 24, 25 ... DC power supply

Continued on the front page (72) Inventor Hidenori Onoto 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (72) Inventor Toshiaki Takamatsu 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Sharp Corporation ( 72) Inventor Hiroshi Morimoto 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka (56) References JP-A-61-59269 (JP, A) JP-A-63-285476 (JP, A) 62-258490 (JP, A) JP-A-1-303416 (JP, A)

Claims (2)

(57) [Claims] 1. A plurality of first electrodes parallel to each other, a plurality of second electrodes extending in a direction intersecting with the first electrodes, and a plurality of second electrodes extending in a direction crossing the first electrodes. Switching means provided for each of a plurality of unit regions surrounded by the first electrode and the second electrode;
In a matrix type display device substrate including a first electrode and a display electrode which is turned on / off via the switching means, a black pigment is applied to the display electrode connected to the switching means having a leak defect. A matrix type electrode, wherein black pigment is not electrodeposited and deposited on the display electrode which is deposited and corrected for defects and which is electrically connected / disconnected with the first electrode via switching means having no leak defect. Display device substrate. 2. A plurality of first electrodes parallel to each other, a plurality of second electrodes extending in a direction intersecting with the first electrodes, and conduction / interruption depending on a signal level at the second electrodes on an electrically insulating substrate. Switching means provided for each of a plurality of unit regions surrounded by the first electrode and the second electrode;
A method for inspecting and correcting an electrical connection state of a matrix type display device substrate including a first electrode and a display electrode which is turned on / off via the switching means, wherein the matrix type display device substrate is provided. And the counter electrode for inspection arranged at an interval with respect to the matrix type display device substrate, while immersed in an electrodeposition solution containing a polymer resin and a black pigment ionized in an aqueous solution, A voltage for leak defect inspection is applied to the first electrode, the second electrode, and the counter electrode, and black pigment is deposited on a display electrode connected to a switching unit having a leak defect. A method for inspecting and repairing a substrate for a matrix type display device, wherein the electrodeposited black pigment is manufactured as a display device by leaving it behind.