JP2633249B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and for example, relates to a technique particularly effective when applied to a semiconductor pellet in an IC card and a method of mounting the same. is there.

[Conventional technology]

A semiconductor pered (Pelle) using a TAB (Tape Autnmated Bondjng) method (in other words, a tape carrier method).
t) For mounting technology, Industrial Research Council, 1980
"IC Packaging Technology" (edited by the Japan Microelectronics Association), published on January 15, 1998, pages 143 to 144. Here, a mounting method by face up or face down for a semiconductor pellet (hereinafter, simply referred to as a pellet) on which an integrated circuit supplied by the above-described tab method is formed will be described with reference to the drawings. ing.

The inventor has studied a technology for mounting a semiconductor pellet on which an integrated circuit is formed.

That is, when the pellet is mounted on a wiring board having external connection terminals, the surface on which the bonding pad electrode for external wiring terminal connection formed on the surface of the pellet is formed is opposed to the placement substrate, so-called, There are a face-down method and a so-called face-up method in which the back surface of the pellet faces the wiring board.

[Problems to be solved by the invention]

Here, in the case of an IC card or the like, the terminal arrangement of the substrate on which the pellet is mounted is determined by the ISO (International Organization fo
r Standardization), and it may not be possible to change the terminal arrangement on the board side. When mounting the pellets on such a mounting board, it is necessary to prepare two types of bonding pad electrodes having different arrangements of the bonding pad electrodes according to the difference in the mounting method, even if the pellets are formed of the same electric circuit. Occurs. That is, it is necessary to prepare two types of pellets having different arrangements of bonding pad electrodes, ie, a face-down type pellet and a face-up type pellet.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor device capable of coping with various types of mounting methods without changing the terminal arrangement of the external wiring board rule and a manufacturing technique thereof. It is in.

The above and other objects and novel features of the present invention are as follows.
It will be apparent from the description of this specification and the accompanying drawings.

[Means for solving the problem]

The outline of a representative invention among the inventions disclosed in the present application will be briefly described as follows.

That is, the bonding pad electrode provided on the surface of the semiconductor pellet on which the integrated circuit is formed is arranged in the first arrangement state, and is connected to a circuit having a predetermined function through a wiring layer extending on the semiconductor pellet. A plurality of first bonding pad electrodes, and a plurality of second bonding pad electrodes arranged in a second arrangement state different from the first arrangement state and connected to the circuit through the wiring layer. Each of the plurality of first bonding pad electrodes and the plurality of second bonding pad electrodes connected to the circuit through a wiring layer is substantially mirror-symmetric about a center line of the surface of the semiconductor pellet. Are arranged as follows.

Further, a bonding pad electrode provided on a surface of the semiconductor pellet on which the integrated circuit is formed is arranged in a first arrangement state, and is connected to a circuit having a predetermined function through a wiring layer extending on the semiconductor pellet. A plurality of first bonding pad electrodes, and a plurality of second bonding pad electrodes arranged in a second arrangement state different from the first arrangement state and connected to the circuit through the wiring layer. Each of the plurality of first bonding pad electrodes and the plurality of second bonding pad electrodes connected to the circuit through a wiring layer has a substantially parallel movement relationship via a center line on the surface of the semiconductor pellet. Are arranged as follows.

[Action]

According to the above-described means, the pad electrode having the same function can be connected to the external terminal of the mounting base regardless of whether the mounting method is the face-up method or the face-down method. There is no need to separately prepare pellets having pad arrangements, and a single pellet can support various types of mounting methods.

Embodiment 1 FIG. 1 is a schematic enlarged plan view showing a bonding pad electrode as an external connection electrode of a semiconductor pellet applied to an embodiment of the present invention, and FIG. FIG. 3 is a schematic enlarged cross-sectional view showing an example of mounting a pellet by face-up, FIG. 4 is a plan view showing the entire IC card of the embodiment, and FIG. 5 is V in FIG. FIG. 6 is an enlarged cross-sectional view taken along line -V, and FIG. 6 is an enlarged plan view showing the electrode module formed from the tape carrier.

The semiconductor device of the present embodiment constitutes a so-called IC card 1 and, as shown in FIG. 4, has a rectangular planar shape, four corners of which are cut and molded, and four corners having a rounded shape. You are. The semiconductor pellet 2 is mounted on the electrode module 3 as shown in FIG.
The external electrodes 4 electrically connected to the pellet 2 are exposed from the IC card surface on the card surface.

The cross-sectional structure of the IC card 1 is as shown in FIG. That is, the electrode module 3 having the pellets 2 attached thereto is mounted on a card substrate 5 made of hard PVC resin, and the front and back surfaces of the card substrate 5 are laminated with a film-like oversheet 6 made of hard PVC resin. It has a processed structure.
Although not particularly limited, a magnetic stripe 7 is buried immediately above the pellet 2 by laminating.

The electrode module 3 is configured as shown in FIGS. 5 and 6. That is, the printed wiring or metallized layer 8 made of copper foil is adhered to the surface of the insulating sheet 30 made of glass epoxy resin,
An external electrode 4 is provided at each end of the metallized layer 8. The insulating sheet 30 is provided with a pellet mounting hole 9, and the metallized layer 8 is integrally connected to a predetermined lead 10 extending above the pellet mounting hole 9.

The pellet 2 is mounted on the lead 10 of the electrode module 3 by a so-called face-down method in which the semiconductor integrated circuit forming surface 2a of the pellet 2 faces, as shown in FIG. 5 and FIG. ing. More specifically, the pellet 2 has a bump electrode (bonding pad electrode) 11 made of gold, solder, or the like on its surface, and the bump electrode is formed by a wireless bonding technique, that is, a TA.
It is connected to the lead 10 by B (Tape Automated Bonding) technology. The surface of the pellet 2 is covered with an undercoat material or a surface protection material 31 made of an epoxy resin applied after the bonding of the lead 10.

Here, various bonding pad electrodes are arranged on the surface of the pellet 2 of the present embodiment, that is, on the semiconductor integrated circuit forming surface 2a with the arrangement shown in FIG. Here, in the present embodiment, these bonding pad electrodes are arranged in a state having a certain regularity such as substantial parallel movement. In this manner, pads are formed in pairs on the circuit forming surface 2a of the pellet 2 so as to be compatible with both the face-up method and the face-down method. When the front and back of the pellet 2 are turned by 180 degrees and turned upside down, a pad having the same function as the pad is located near a position corresponding to a predetermined pad position before the 180 degree rotation when viewed from the electrode module 3 which is a wiring board. A plurality of pads of the same kind are arranged so as to be connected to each other so that the pads having the same function are connected to the external terminals before and after the rotation of the pellet 2. ing.

That is, the ground pad (Vss) 12
a, an input / output pad (I / O) 13b is provided below the input / output pad (I / O) 13b, while the lower left has the same function as the ground pad (Vss) 12a and the input / output pad (I / O) 13b, respectively. Ground pad (Vss) 12b and I / O pad (I /
O) 13a is provided in relation to translation. Then, the respective ground pads 12a and 12b are
b and 13a are electrically connected to each other. In the embodiment of FIG. 1, the output buffer circuits for both input / output pads (I / O) 13b, 13a are one-to-one corresponding to the pads 13b, 13a, although they have the same function. And output buffer circuits 14b and 14a. P-channel output MOSFET Q ₁ and N-channel output MOSFET Q ₂ constituting the output buffer circuit 14b, as the distance between the output node and the pad 13b becomes small, are placed near the pad 13b on the semiconductor pellet 2.
Similarly, the two MOSFETs forming the output buffer 14a are:
It is arranged near the pad 13a. This configuration works with pad 13b
Alternatively, good driving of the load coupled via 13a and the external electrode 4 is enabled.

Since the same function is given to the pads 13b and 13a, one of the two output buffer circuits 14b and 14a, for example, 14a is omitted, and the output terminal of the output buffer circuit 14b is connected to the pellet (chip). New wiring layer to extend
The pad 13a can be connected by 15.

However, in this embodiment, the following points need to be noted. That is, an undesired capacitance load on the output buffer circuit is formed by the stray capacitance formed by the wiring layer 15. Also, power supply wiring
As a result of Vcc, ground or reference potential wiring Vss being extended on the pellet (chip) so as to be able to supply power to various circuits provided on the pellet (chip), the wiring layer 15 intersects with the wiring. Needs to be done.
In that case, it is desirable that the impedance of the power supply wiring and the reference potential wiring be small in order to prevent malfunction of the circuit. Therefore, when the cross wiring structure is composed of, for example, a semiconductor wiring layer and a metal wiring layer of aluminum or the like intersecting with the semiconductor wiring layer, the power supply wiring and the reference potential wiring in the cross structure portion are formed of a metal wiring layer having a small resistance. layer
A wiring layer such as 15 is composed of a semiconductor wiring layer. Accordingly, the wiring layer 15 has a relatively large resistance or impedance. When the wiring layer 15 has a relatively large resistance or impedance as described above, it becomes difficult to give a signal that changes well to the pad 13a to which the wiring layer 15 is coupled.

In the first view, the resistor R ₁ is a protective resistor for the input circuit receiving the signal through the pad 13b, 13a. Resistor R ₁ is therewith by the capacity of the input capacitance constituted by an input circuit (not shown) formed on the pellet, constituting a substantial surge absorption circuit. Therefore, even if an undesired surge voltage causing frictional static electricity is applied to the pad 13b or 13a via the external electrode 4 shown in FIGS. Protected against voltage.

A power supply pad (Vcc) 16a and a clock pad (CLK) 17b are provided at the upper right in FIG. 1, while the power supply pad (Vcc) 16a and the clock pad (CL) are provided at the lower right.
A power supply pad (Vss) 16b and a clock pad (CLK) 17a are provided corresponding to K) 17b. Then, the respective power supply pads 16a, 16b, the clock pads 17a, 17b
The two are electrically connected to each other. In FIG. 1, the P-channel MOSFETs Q ₂ , N formed on the pellet 2 are applied to both clock pads (CLK) 17 b, 17 a, respectively.
Protection circuit 18b consisting of channel MOSFET Q ₄ and resistor R ₂ ,
18a is provided.

The MOSFET Q ₃ has its gate and source connected to the power supply line
Coupled to vcc, MOSFET Q ₄ has its gate and source are coupled to a reference potential wiring Vss, by the breakdown voltage, limits the surge voltage level. Even if a surge voltage is applied to the clock pad 17b or 17a by the protection circuit 18b or 18a, the pad 17
An input circuit (not shown) on the pellet receiving the clock pulse signal via b or 17a is protected from such surge voltage.

The pads 17b and 17a may be directly connected by the newly provided wiring layer 19, and one of the two protection circuits 18b and 18a, for example, 18a may be omitted. However, in this embodiment, the following points need to be noted. That is, since the wiring layer 19 is extended on the pellet, the wiring layer 19 has a negligible inductance and resistance. Very rapidly changing voltages, such as surge voltages, are not substantially limited by such inductances. In response, pad 17a
If a surge voltage is applied to a pad like
The portion of the wiring layer 19 close to the pad 17a is set to a level substantially equal to the surge voltage. If a surge voltage is applied to the wiring layer 19 extended on the pellet, there is a possibility that a surge voltage may be applied to the internal wiring and circuit elements on the pellet via an undesired coupling capacitance. In response to this, there is a possibility that the characteristics of the circuit element or the like may be deteriorated or destroyed.

Among the above-mentioned pad electrodes, in this embodiment, the connection with the lead 10 is made by the ground pad (Vss) 12a, the input / output pad (I / O) 13a, the power supply pad (Vcc) 16, and the clock pad (CLK). ) Only 17a, other pads are not connected to the leads 10.

By the way, as shown in FIG. 3, the pellet 2 is made of an electrode module using a bonding material 20 such as a silver paste.
The back side of the circuit forming surface 2a side with respect to 3a is the electrode module 3a.
It is also possible to mount the unit in a state of facing each other, that is, in a face-up manner. In such a mounting method, for example, the electrode terminals of the electrode module 3a are connected by wire bonding.
In order to establish electrical continuity with 21, the following is performed.

That is, the semiconductor integrated circuit forming surface 2a of the pellet 2
2 is rotated 180 degrees from the face-down state shown in FIG. 2, the pads bonded to the leads 10 in a predetermined arrangement at the time of face-down mounting do not match the electrode terminal arrangement of the electrode module 3a at the time of face-up. Therefore, the pellets for face-down mounting may not be usable for face-up mounting.

However, in the present embodiment, the circuit forming surface 2a of the pellet 2 is rotated by 180 degrees about the center line CL in FIG. 1 and corresponds to the wireless bonding pad position before rotation when viewed from the electrode module 3a. A wire bonding pad having the same function as the pad is formed near the position. Therefore, without changing the terminal arrangement of the electrode module 3a, which is a wiring board, or the pad arrangement on the pellet 2, the electrode terminal corresponding to each pad is not changed.
21 can be electrically connected by wire bonding using a bonding wire 22 such as a gold wire, an aluminum wire, or a copper wire. In the wire bonding technology, the relative position between the wire bonding pad electrode and the external terminal lead in the pellet 2 is any of ball bonding, thermocompression bonding, thermocompression bonding assisted by ultrasonic vibration, and ultrasonic vibration bonding. Good wire bonding can be performed even with various arrangement relationships.

That is, when mounting is performed by the face-up method as shown in FIG. 3, the ground pad (Vss) 12b, the input / output pad (I / O) 13b, the power supply pad (Vcc) 16b, and the clock pad (CLK) 17b The wire 22 may be connected to each. As described above, by selectively changing the pad to which the lead 10 or the wire 22 is connected depending on the mounting method, the face-up method or the face-down method can be performed without changing the terminal arrangement on the electrode module 3 or 3a side as the mounting substrate. Each mounting method can be realized by a single pellet 2.

As described above, according to the present embodiment, the following effects can be obtained.

(1) The circuit forming surface 2a of the pellet 2 is aligned with the center line in FIG.
When the pad is rotated by 180 degrees around the center axis and a pad having the same function as the pad is formed near a position corresponding to a predetermined pad position before the rotation by 180 degrees as viewed from the electrode module 3a, the pellet is rotated. Pads having the same function before and after rotation can be connected to external terminals. for that reason,
Either the face-down or face-up mounting method can be performed with a single pellet 2 without changing the terminal arrangement of the electrode module 3a or the pad arrangement on the pellet 2.

(2) According to the above (1), the degree of freedom of mounting with a single pellet 2 is increased, so that the package structure can be diversified.

Although the invention made by the inventor has been specifically described based on the embodiment, the present invention is not limited to the embodiment, and it is needless to say that various modifications can be made without departing from the gist of the invention. Nor. For example, pellets
The center line CL for 180-degree rotation has been described with reference to the case where the center of the pellet 2 is drawn in the horizontal direction in FIG. 1, but the pad is arranged around the center line where the center of the pellet 2 is drawn in the vertical direction. May be performed.

Although only the case of wire bonding has been described as an example of face-up mounting, similarly to the case of face-down mounting, leads may be bonded to pads with bump electrodes interposed therebetween.

Further, as the types of pads, in addition to those described in the embodiment, reset pads RES, program voltage supply pads Vpp, performance test pads, or the like may be formed.

In the above description, the case where the invention made by the present inventors is applied to a so-called IC card, which is a field of application thereof, has been mainly described. However, the present invention is not limited to this case. The present invention can also be applied to a semiconductor device having another package structure such as a fixed semiconductor device and a method of manufacturing the same.

The effect obtained by the representative one of the inventions disclosed in the present application will be briefly described as follows.

That is, a plurality of first bonding pad electrodes arranged in the first arrangement state, and a second arrangement state different from the first arrangement state given the same kind of electric circuit function as the first pad electrode. By forming the semiconductor device structure in which the plurality of second bonding pad electrodes and the semiconductor pellet are formed on the main surface of the semiconductor pellet, a bonding pad to be connected to an external terminal can be selected. Therefore, it is not necessary to separately prepare pellets each having a unique bonding pad arrangement by a different mounting method as in the related art, and a single pellet can cope with various types of mounting methods.

Second Embodiment FIG. 7 is a plan view showing an IC card according to another embodiment of the present invention, and FIG. 8 is a tape carrier type module incorporated in the IC card shown in FIG. FIG. 9 is a plan view showing an IC pellet attached to the module (wiring board) shown in FIG. 8,
FIG. 10 is an enlarged plan view of the IC pellet of the module shown in FIG. 8 and its periphery, and FIG. 11 is a sectional view taken along the line XI-XI in FIG.

The semiconductor device of the present embodiment constitutes a so-called IC card 101, and as shown in FIG.
The four corners are cut and formed, and the four corners have a rounded shape. The IC pellet 102 shown in FIG. 9 is incorporated in the IC card 101 while being attached to a module 103 obtained from a carrier tape as shown in FIG. 8, and is electrically connected to the pellet 102 on the card surface. The external electrodes 104 thus exposed are exposed from the surface of the IC card.

The cross-sectional structure of the IC card 101 is the same as that of the first embodiment shown in FIG.
It is almost the same as an IC card. That is, pellets 102 are placed on a card substrate made of hard PVC resin.
Is mounted, and the front and back surfaces of the card substrate are laminated with a film-like oversheet made of hard polyvinyl chloride resin. Note that, although not particularly limited, a magnetic stripe 107 is embedded directly above the pellet 102 by lamination.

The module 103 is configured as shown in FIGS. 8, 10 and 11. That is, a printed wiring or metallized layer 108 made of copper foil is mounted on the surface of an insulating sheet 130 made of glass epoxy resin, and an external electrode 104 is provided at each end of the metalized layer 108. . Each of the insulating sheets 130 is provided with a pellet mounting hole 109, and the metallized layer 108 is integrally connected to a predetermined finger lead 110 extending above the pellet mounting hole 109. Although not shown, the pellet 102 and its periphery are sealed with resin for surface protection.

The pellet 102 is mounted on the finger lead 110 of the module 103 as shown in FIGS.
It is mounted by the so-called face-down method where 2a faces each other. More specifically, the pellet 102 has a bump electrode 111 on its surface as a bonding pad electrode made of gold, solder, or the like, and the bump electrode is connected to the lead 110 by a bonding technique. The surface of the pellet 102 is covered with an undercoat material or a surface protection material made of an epoxy resin applied and formed after the bonding of the lead 110. For simplicity of illustration, the surface protective material is omitted from the drawing.

Here, various bonding pad electrodes 112 to 123 are arranged on the surface of the pellet 102 of this embodiment, that is, on the circuit forming surface 102a, with the arrangement shown in FIG. Here, in the present embodiment, these pad electrodes are arranged in a state having a certain regularity such as substantial mirror symmetry. That is, when the circuit forming surface 102a of the pellet 102 is rotated by 180 degrees about the center line CL and the pellet 102 is turned upside down, the module 10
A plurality of required pads of the same type are arranged and connected to each other such that a pad having the same function as the pad comes near a position corresponding to a predetermined pad position before rotation as viewed from 3;
The pad arrangement is configured so that pads having the same function and external terminals are connected before and after rotation of the pellet 102.

As shown in FIG. 9, the pered 102 of this embodiment
It has a set of bonding pad electrodes, and a total of twelve bonding pad electrodes 112 to 123 are formed on the main surface 102 a of the pellet 102. Power supply Vcc pad on left side of pellet 102
112,113, Reset RES pad 114,115, Clock CLK pad
116,117 are arranged. On the right side of the pellet 102, ground Vss pads 118 and 119, program voltage supply Vpp pad
120, 121 and input / output I / O pads 122, 123 are arranged. Then, in each bonding pad electrode, the pad electrodes 112, 114, 116, 118,
0, 122 and the corresponding pad electrodes 113, 115, 117, 119, 121, 123 of the face-up bonding method are electrically connected to each other. In the case of the present embodiment, the two clock CLK pads 116 and 117 are electrically connected directly by an electric wiring 124, and the protection circuit described in the first embodiment is connected in series to the electric wiring. Note that, as described in the first embodiment, this protection circuit may have a mode in which the clock CLK pad 116 and the clock CLK pad 117 are connected in series.

The two input / output I / O pads 122 and 123 are electrically connected directly by an electric wiring 125, and the output buffer circuit and the surge absorbing circuit described in the first embodiment are connected in series to the electric wiring. I have. As described in the first embodiment, these output buffer circuits and surge absorbing circuits are provided with respective input / output I / O pads 122 and input / output I / O pads 1.
It is also possible to adopt a mode in which the connection is made in series with the connection 23.

As shown in FIG. 8, external electrodes 104 corresponding to the respective bonding pad electrodes of the pellet 102 are provided on the IC card. Among the external electrodes of the IC card 103, those indicated by NC are non-connection (None Connection).
nection), which is an external electrode for non-connection
This is a spare electrode provided in preparation for the development of the C card function. In the current IC card, it is an external electrode that is not connected to any other electric circuit.

Meanwhile, as shown in FIG. 12 to FIG. 13, the pellet 102 is formed by using a bonding agent 102b such as a silver paste to face the back surface of the circuit forming surface 102a side of the module 103 to the module 103. It is also possible to mount in a state in which it is made to face, that is, in a face-up manner. When electrical conduction with the terminal leads 126 of the module 103 is to be achieved by, for example, wire bonding in such a mounting method, the following is performed.

That is, the circuit forming surface 102a of the pellet 102 is
When rotated 180 degrees from the face-down state shown in Figs.
Each pad bonded to 110 does not match the electrode terminal arrangement of module 103 at face-up. Therefore, the pellets for face-down mounting may not be usable for face-up mounting.

However, in this embodiment, the circuit forming surface 102a of the pellet 102
9 is rotated 180 degrees about the center line CL in FIG. 9, and a pad having the same function as the pad is formed near a position corresponding to a predetermined pad position before rotation when viewed from the module 103. Therefore, without changing the terminal arrangement of the module 103 which is a mounting substrate or the pad arrangement on the pellet 102, each pad and the corresponding terminal lead 126 can be electrically connected by wire bonding using a wire 127 such as gold. Becomes possible.

That is, when mounting is performed by the face-up method as shown in FIGS. 12 to 13, the power supply Vcc pad 113, the reset RES pad 115, the clock CLK pad 117, the ground Vss pad 119, the program voltage supply Vpp pad 121 Therefore, the input / output I / O pad 123 and each terminal lead 126 may be interconnected by the bonding wire 127.

As described above, by selectively changing the terminal lead 126 or the pad to which the wire 127 is connected depending on the mounting method, the face-up method or the face-down method can be performed without changing the arrangement of the module 103 or the terminal lead 126 as the mounting substrate. Can be realized by a single pellet 102.

As described above, according to the present embodiment, the following effects can be obtained.

(1) With the circuit forming surface 102a of the pellet 102 rotated 180 degrees around the center line CL in FIG.
A pad having the same function as before and after the rotation of the pellet 102 is connected to an external terminal by forming a pad having the same function as the pad near the position corresponding to the predetermined pad position before rotation as viewed from 03. Module 10
It is possible to perform either face-down or face-up mounting with a single pellet 102 without changing the terminal arrangement 3 or the pad arrangement on the pellet 102.

(2) According to the above (1), the degree of freedom of mounting with a single pellet 102 is increased, so that the package structure can be diversified.

FIGS. 14 to 15 show the wire bonding pad electrodes 113, 115, 117, 119, 121, 123 and the bumps 128a of the finger leads 128 on which the bumps 128a are formed in advance, which are wirelessly bonded.
This is advantageous in terms of cost as compared with a method in which a bump is previously formed on the bonding pad electrode in the IC pellet 102. Bump 128 at the tip of finger lead 128
The formation of a can be performed by subjecting the finger lead to selective etching or the like so as to form a projection at the tip of the finger lead 128, and forming the finger lead.

〔The invention's effect〕

A plurality of first bonding pad electrodes arranged in a first arrangement state, and a plurality of second bonding pad electrodes arranged in a second arrangement state different from the first arrangement state given the same function as the first bonding pad electrode. With the structure of the semiconductor device in which the bonding pad electrode and the IC pellet are formed on one surface of the IC pellet, it becomes possible to select a bonding pad to be electrically connected to the external terminal lead. Therefore, one semiconductor pellet and an external terminal lead can be electrically connected by various methods such as a face-down method, a face-up method, a wire bonding method, and a wireless bonding method. Accordingly, in the present invention, it is not necessary to separately prepare semiconductor pellets each having a unique pad arrangement by various different mounting methods, and a single semiconductor pellet can cope with various types of mounting methods.

[Brief description of the drawings]

FIG. 1 is a schematic enlarged plan view showing a pad forming state of a pellet applied to one embodiment of the present invention, FIG. 2 is a schematic enlarged sectional view showing an example of mounting a pellet by face-down, and FIG. FIG. 4 is a plan view showing the entire IC card of the embodiment, FIG. 5 is an enlarged sectional view taken along the line VV in FIG. 4, and FIG. 6 is an electrode module. FIG. FIG. 7 is a plan view showing an IC card according to another embodiment of the present invention. FIG. 8 is a plan view showing a tape carrier type module incorporated in the IC card shown in FIG. FIG. 9 shows a module (wiring board) shown in FIG.
FIG. 10 is an enlarged plan view of the IC pellet of the module shown in FIG. 8 and the periphery thereof, and FIG. 11 is a sectional view taken along line XI-XI of FIG. FIG. 12 is a partially enlarged rear view of an IC module employing wire-bonding electrical connection, and FIG. 13 is a cross-sectional view taken along line XIII-XIII of FIG. FIG. 14 is a partially enlarged rear view of the IC module employing the electric connection of the wireless bonding method, and FIG. 15 is a sectional view taken along the line XV-XV in FIG.

 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Chie Kawashita 1450 Kamisumihonmachi, Kodaira City Inside Semiconductor Division, Hitachi, Ltd. (56) References JP-A-59-21055 (JP, A) (JP, U)

Claims (13)

(57) [Claims] 1. A semiconductor device in which a semiconductor pellet on which an integrated circuit is formed is mounted on a substrate for an IC card, wherein bonding pad electrodes provided on a surface of the semiconductor pellet are arranged in a first arrangement state. A plurality of first bonding pad electrodes connected to a circuit having a predetermined function through a wiring layer extending on the semiconductor pellet; and a plurality of first bonding pad electrodes arranged in a second arrangement state different from the first arrangement state; And a plurality of second bonding pad electrodes connected to the circuit through the plurality of first bonding pad electrodes and the plurality of second bonding pad electrodes respectively connected to the circuit through the wiring layer. Are arranged so as to be substantially mirror-symmetric with respect to the center line of the surface of the semiconductor pellet. The semiconductor device characterized by either one of the bonding pad electrodes of the plurality of first bonding pad electrodes or the plurality of second bonding pad electrode and the external terminal lead corresponding thereto are electrically connected. 2. A semiconductor device in which a semiconductor pellet on which an integrated circuit is formed is attached to an IC card substrate, wherein bonding pad electrodes provided on a surface of the semiconductor pellet are arranged in a first arrangement state. A plurality of first bonding pad electrodes connected to a circuit having a predetermined function through a wiring layer extending on the semiconductor pellet; and a plurality of first bonding pad electrodes arranged in a second arrangement state different from the first arrangement state; And a plurality of second bonding pad electrodes connected to the circuit through the plurality of first bonding pad electrodes and the plurality of second bonding pad electrodes respectively connected to the circuit through the wiring layer. Are arranged so as to have a substantially parallel movement relationship through the center line of the surface of the semiconductor pellet. Wherein either one of the plurality of first bonding pad electrodes or the plurality of second bonding pad electrodes is electrically connected to an external terminal lead corresponding thereto. . 3. A method for manufacturing a semiconductor device, comprising: bonding a plurality of bonding pad electrodes of a semiconductor pellet on which an integrated circuit is formed to a plurality of external end leads; and sealing the semiconductor pellet and its periphery with a resin. The bonding pad electrodes provided on the surface of the semiconductor pellet are arranged in a first arrangement state, and are connected to a plurality of first bonding pad electrodes connected to a circuit having a predetermined function through a wiring layer extending on the semiconductor pellet. And a plurality of second bonding pad electrodes arranged in a second arrangement state different from the first arrangement state and connected to the circuit through the wiring layer, and connected to the circuit through the wiring layer. The plurality of first bonding pad electrodes and the plurality of second bonding pad electrodes A method of manufacturing a semiconductor device, wherein each of the poles is arranged so as to be substantially mirror-symmetric with respect to a center line of the surface of the semiconductor pellet. 4. A method for manufacturing a semiconductor device, comprising: bonding a plurality of bonding pad electrodes of a semiconductor pellet on which an integrated circuit is formed to a plurality of external end leads; and sealing the semiconductor pellet and its periphery with a resin. The bonding pad electrodes provided on the surface of the semiconductor pellet are arranged in a first arrangement state, and are connected to a plurality of first bonding pad electrodes connected to a circuit having a predetermined function through a wiring layer extending on the semiconductor pellet. And a plurality of second bonding pad electrodes arranged in a second arrangement state different from the first arrangement state and connected to the circuit through the wiring layer, and connected to the circuit through the wiring layer. The plurality of first bonding pad electrodes and the plurality of second bonding pad electrodes A method of manufacturing a semiconductor device, wherein each of the poles is arranged so as to have a substantially parallel movement relationship via a center line on the surface of the semiconductor pellet. 5. The method for manufacturing a semiconductor device according to claim 3, wherein an external terminal lead corresponding to the first bonding pad electrode is interconnected by a wireless bonding method. . 6. The manufacturing of a semiconductor device according to claim 3, wherein an external terminal lead corresponding to said second bonding pad electrode is interconnected by using a bonding wire. Method. 7. The plurality of first bonding pad electrodes are electrically connected to the external terminal leads by a wireless bonding method as necessary, and the plurality of second bonding pad electrodes are wire-bonded as necessary. 5. The method according to claim 3, wherein the semiconductor device is electrically connected to the external terminal lead by a method. 8. The method according to claim 3, wherein the plurality of first bonding pad electrodes have a bump shape. 9. The plurality of first bonding pad electrodes include a power Vcc pad electrode, a reset RES pad electrode, a clock CLK pad electrode, a ground Vss pad electrode, a program voltage supply Vpp pad electrode, and an input / output I / O pad electrode. Wherein the plurality of second bonding pad electrodes are, like the first bonding pad electrode, a power supply Vcc pad electrode;
5. The semiconductor according to claim 3, further comprising a reset RES pad electrode, a clock CLK pad electrode, a ground Vss pad electrode, a program electrode supply Vpp pad electrode, and an input / output I / O pad electrode. Device manufacturing method. 10. The plurality of first bonding pad electrodes include the clock CLK pad electrode, and the plurality of second bonding pad electrodes also include the clock CLK pad electrode. The clock CLK pad electrode on the first bond pad electrode and the clock CL on the second bond pad electrode
10. The method according to claim 9, wherein the K pad electrode is short-circuited. 11. The clock CLK pad electrode is included in both the plurality of first bonding pad electrodes and the plurality of second bonding pad electrodes, and each clock CLK pad electrode is provided on the semiconductor pellet. 10. The method according to claim 9, wherein a protection circuit for preventing the formed integrated circuit from being destroyed is connected. 12. The input / output I / O pad electrode is included in the plurality of first bonding pad electrodes.
The input / output is also applied to the plurality of second bonding pad electrodes.
An I / O pad electrode is included, and the input / output I / O pad electrode on the first bonding pad electrode and the input / output I / O pad electrode on the second bonding pad electrode are short-circuited. 10. The method for manufacturing a semiconductor device according to claim 9, wherein: 13. The input / output I / O pad electrode is included in both the plurality of first bonding pad electrodes and the plurality of second pads, and each input / output I / O pad electrode has an output buffer. 10. The method of manufacturing a semiconductor device according to claim 9, wherein a protection resistor in an input circuit for preventing a circuit and an integrated circuit formed in the semiconductor pellet from being destroyed is connected.