JP2621749B2 - Jig for semiconductor transportation - Google Patents
Jig for semiconductor transportationInfo
- Publication number
- JP2621749B2 JP2621749B2 JP4302261A JP30226192A JP2621749B2 JP 2621749 B2 JP2621749 B2 JP 2621749B2 JP 4302261 A JP4302261 A JP 4302261A JP 30226192 A JP30226192 A JP 30226192A JP 2621749 B2 JP2621749 B2 JP 2621749B2
- Authority
- JP
- Japan
- Prior art keywords
- jig
- semiconductor
- resistance value
- transporting
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体搬送用治具に係
り、特にその上に半導体ウェハを載置して搬送するため
の半導体搬送用治具であって、抵抗値の調節が容易でし
かも安価に提供される半導体搬送用治具に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor transfer jig, and more particularly to a semiconductor transfer jig for mounting and transferring a semiconductor wafer thereon, wherein the resistance value can be easily adjusted. The present invention relates to an inexpensive semiconductor transfer jig.
【０００２】[0002]
【従来の技術】半導体製造装置で製造された半導体は、
搬送ロボットに取り付けられた半導体搬送用治具に載置
して、次工程へ搬送される。2. Description of the Related Art Semiconductors manufactured by semiconductor manufacturing equipment are:
It is mounted on a semiconductor transfer jig attached to a transfer robot and transferred to the next step.
【０００３】従来、半導体搬送用治具としては、アルミ
ナ（Ａｌ2 Ｏ3 ）焼結体よりなるものが使用されてい
る。Conventionally, as a jig for transporting a semiconductor, a jig made of alumina (Al 2 O 3 ) sintered body has been used.
【０００４】[0004]
【発明が解決しようとする課題】Ａｌ2 Ｏ3 焼結体より
なる従来の半導体搬送用治具では、使用環境において帯
電することが多く、 Ｓｉウェハ上の回路の破壊 パーティクルの付着 といった問題がある。これは、Ａｌ2 Ｏ3 が２０００〜
３０００ＭΩ以上という高い抵抗値を持つためである。A conventional jig for transporting a semiconductor made of an Al 2 O 3 sintered body is often charged in a use environment, and has a problem of breaking down a circuit on a Si wafer and adhesion of particles. . This is because Al 2 O 3
This is because it has a high resistance value of 3000 MΩ or more.
【０００５】そこで、このＡｌ2 Ｏ3 焼結体製半導体搬
送用治具の欠点を改良するために、抵抗値の低いＳｉＣ
（炭化珪素）焼結体（抵抗値２０ＭΩ）よりなる半導体
搬送用治具が提供されている。Therefore, in order to improve the disadvantages of the semiconductor transport jig made of Al 2 O 3 sintered body, SiC having a low resistance value is used.
A jig for transporting a semiconductor made of a (silicon carbide) sintered body (resistance value: 20 MΩ) is provided.
【０００６】しかしながら、ＳｉＣ焼結体は高価である
ため、このようなＳｉＣ焼結体よりなる半導体搬送用治
具は高コストとなるという欠点がある。しかも、ＳｉＣ
焼結体ではその抵抗値が一定値の半導体搬送用治具しか
得られず、所望の抵抗値に調整することができないとい
う不具合もある。However, since the SiC sintered body is expensive, there is a disadvantage that the semiconductor transport jig made of such a SiC sintered body is expensive. Moreover, SiC
In the case of a sintered body, only a jig for transporting a semiconductor having a constant resistance value can be obtained, and there is a problem that the resistance value cannot be adjusted to a desired value.
【０００７】本発明は上記従来の問題点を解決し、安価
に提供され、しかも、抵抗値を容易調整することがで
き、容易に所望の抵抗値を付与することができる半導体
搬送用治具を提供することを目的とする。The present invention solves the above-mentioned conventional problems and provides a semiconductor transport jig which can be provided at a low cost, can easily adjust a resistance value, and can easily provide a desired resistance value. The purpose is to provide.
【０００８】[0008]
【課題を解決するための手段】本発明の半導体搬送用治
具は、半導体ウェハを載置して搬送するための半導体搬
送用治具であって、Ａｌ2 Ｏ3 焼結体よりなる本体の半
導体ウェハ載置面にＳｉＣ被膜を形成してなることを特
徴とする。SUMMARY OF THE INVENTION A semiconductor transfer jig according to the present invention is a semiconductor transfer jig for mounting and transferring a semiconductor wafer, and comprises a main body made of an Al 2 O 3 sintered body. It is characterized in that a SiC coating is formed on the semiconductor wafer mounting surface.
【０００９】[0009]
【作用】本発明の半導体搬送用治具は、本体がＡｌ2 Ｏ
3 焼結体よりなるものであるため、安価に提供される。The jig for transporting semiconductor of the present invention has a main body made of Al 2 O.
Since it is made of three sintered bodies, it is provided at low cost.
【００１０】しかも、その表面のＳｉＣ被膜の厚さを調
整することにより、抵抗値を容易に変化させることがで
き、所望の抵抗値の半導体搬送用治具を得ることができ
る。Moreover, by adjusting the thickness of the SiC film on the surface, the resistance value can be easily changed, and a semiconductor transport jig having a desired resistance value can be obtained.
【００１１】因みに、従来のＡｌ2 Ｏ3 焼結体製の半導
体搬送用治具について、帯電を防止するためには、導電
性物質の被膜を形成すれば良い。しかし、導電性物質の
被膜を形成したものでは、Ｓｉウェハを破壊する可能性
がある。Incidentally, in the conventional jig for transporting a semiconductor made of Al 2 O 3 sintered body, in order to prevent electrification, a coating of a conductive substance may be formed. However, if a conductive film is formed, the Si wafer may be broken.
【００１２】一方、完全な絶縁体では従来の問題を解決
することはできない。On the other hand, the conventional problem cannot be solved with a perfect insulator.
【００１３】従って、適当な抵抗値を有し、かつ、帯電
の恐れもない半導体搬送用治具を得るためには、半導体
搬送用治具の抵抗値の範囲はごく限られた範囲となる。Therefore, in order to obtain a jig for transporting semiconductors having an appropriate resistance value and without fear of charging, the range of the resistance value of the jig for transporting semiconductors is extremely limited.
【００１４】本発明の半導体搬送用治具によれば、その
抵抗値を容易にこのような好適範囲に設定することがで
きる。According to the jig for transporting semiconductors of the present invention, the resistance value can be easily set in such a preferable range.
【００１５】[0015]
【実施例】以下に本発明を図面を参照して詳細に説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings.
【００１６】図１（ａ）は本発明の半導体搬送用治具の
一実施例を示す平面図、図２（ｂ）は同側面図である。FIG. 1A is a plan view showing an embodiment of a semiconductor carrying jig according to the present invention, and FIG. 2B is a side view thereof.
【００１７】図示の如く、本実施例の半導体搬送用治具
１は、Ａｌ2 Ｏ3 焼結体よりなり、基端側から先端側へ
向けて幅が狭められたヘラ形状の本体２のウェハ載置面
２ａに、ＳｉＣ被膜３が形成されてなるものである。な
お、図中、４は半導体搬送用治具１を搬送ロボットの腕
部に取り付けるためのビス孔であり、５はウェハ脱落防
止のための溝である。As shown in the figure, the jig 1 for transporting a semiconductor according to the present embodiment is made of a sintered body of Al 2 O 3 and has a spatula-shaped main body 2 having a width reduced from a base end to a tip end. The SiC coating 3 is formed on the mounting surface 2a. In the figure, reference numeral 4 denotes a screw hole for attaching the semiconductor transfer jig 1 to the arm of the transfer robot, and reference numeral 5 denotes a groove for preventing the wafer from falling off.
【００１８】このような半導体搬送用治具１は、予め所
定の本体形状に製造したＡｌ2 Ｏ3焼結体の一表面に、
ＣＶＤ法等により所定厚さのＳｉＣ被膜を形成すること
により容易に製造することができる。Such a jig 1 for transporting semiconductor is provided on one surface of an Al 2 O 3 sintered body which has been manufactured in a predetermined body shape in advance.
It can be easily manufactured by forming a SiC film having a predetermined thickness by a CVD method or the like.
【００１９】形成するＳｉＣ被膜の厚さは、本体の大き
さや使用目的、要求抵抗値等によって０．２〜３．０μ
ｍ程度の範囲で適宜決定される。通常の場合、ＳｉＣ被
膜の厚さは１．０〜３．０μｍ、特に１．２〜２．５μ
ｍ程度とするのが好ましく、これにより、抵抗値７〜１
２ＭΩの半導体搬送用治具とするのが好ましい。The thickness of the SiC film to be formed is 0.2 to 3.0 μm depending on the size of the main body, the purpose of use, the required resistance value and the like.
It is appropriately determined within a range of about m. Normally, the thickness of the SiC coating is 1.0 to 3.0 μm, especially 1.2 to 2.5 μm.
m, so that the resistance value is 7 to 1
It is preferable to use a semiconductor transfer jig of 2 MΩ.
【００２０】以下に実験例を挙げて本発明をより具体的
に説明する。Hereinafter, the present invention will be described more specifically with reference to experimental examples.
【００２１】実験例１ Ａｌ2 Ｏ3 焼結体の表面にスパッタリング法によりＳｉ
Ｃ被膜を形成することにより、図１（ａ），（ｂ）に示
す本発明の半導体搬送用治具を製造した。Experimental Example 1 The surface of an Al 2 O 3 sintered body was
By forming the C film, the semiconductor carrying jig of the present invention shown in FIGS. 1A and 1B was manufactured.
【００２２】各部の寸法は次の通りとした。The dimensions of each part were as follows.
【００２３】ａ＝１６５ｍｍ ｂ＝ ４２ｍｍ ｃ＝１１５ｍｍ ｄ＝ ５０ｍｍ ｔ1 ＝１．５ｍｍ ＳｉＣ被膜の厚さｔ2 を種々変えて、半導体搬送用治具
の抵抗値（Ｎｏ．２〜４）を測定し、結果を図２に示し
た。A = 165 mm b = 42 mm c = 115 mm d = 50 mm t 1 = 1.5 mm The resistance (Nos. 2 to 4) of the jig for transporting semiconductor was measured by variously changing the thickness t 2 of the SiC coating. The results are shown in FIG.
【００２４】また、比較のため、ＳｉＣ被膜を形成して
いないものについても抵抗値（Ｎｏ．１）を測定し、結
果を図２に示した。Further, for comparison, the resistance value (No. 1) was also measured for the case where no SiC film was formed, and the results are shown in FIG.
【００２５】図２より、ＳｉＣ被膜の厚さを変えること
により、容易に所望の抵抗値を有する半導体搬送用治具
を製造することができることが明らかである。It is apparent from FIG. 2 that a jig for transporting a semiconductor having a desired resistance value can be easily manufactured by changing the thickness of the SiC film.
【００２６】なお、厚さ２．０μｍのＳｉＣ被膜を形成
したものを複数個製造して抵抗値（Ｎｏ．３Ａ，３Ｂ）
を測定したところ、図２に示す如く、抵抗値の再現性は
極めて良好であった。A plurality of 2.0 μm-thick SiC coatings were manufactured and their resistance values (No. 3A, 3B)
Was measured, the reproducibility of the resistance value was extremely good, as shown in FIG.
【００２７】[0027]
【発明の効果】以上詳述した通り、本発明の半導体搬送
用治具によれば、安価で、しかも、帯電によるウェハの
破壊等の問題のない、所望の抵抗値を有する半導体搬送
用治具が提供される。As described above in detail, according to the semiconductor transfer jig of the present invention, a semiconductor transfer jig having a desired resistance value which is inexpensive and has no problem such as destruction of a wafer due to charging. Is provided.
【図１】（ａ）は本発明の半導体搬送用治具の一実施例
を示す平面図であり、（ｂ）は同側面図である。FIG. 1A is a plan view showing an embodiment of a semiconductor carrying jig according to the present invention, and FIG. 1B is a side view thereof.
【図２】実験例７の結果を示すグラフである。FIG. 2 is a graph showing the results of Experimental Example 7.
１ 半導体搬送用治具 ２ 本体 ３ ＳｉＣ被膜 DESCRIPTION OF SYMBOLS 1 Jig for semiconductor conveyance 2 Main body 3 SiC coating
───────────────────────────────────────────────────── フロントページの続き (72)発明者 青木 高広 長野県上高井郡高山村大字中山981番地 株式会社アキタ理研内 (72)発明者 久保 勲 長野県上高井郡高山村大字中山981番地 株式会社アキタ理研内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takahiro Aoki 981 Nakayama, Takayama-mura, Kamitakai-gun, Nagano Prefecture Inside Akita Riken Co., Ltd. (72) Isao Kubo 981 Nakayama, Takayama-mura, Kamitakai-gun, Nagano Co., Ltd. Akita RIKEN
Claims (1)
半導体搬送用治具であって、Ａｌ2 Ｏ3 焼結体よりなる
本体の半導体ウェハ載置面にＳｉＣ被膜を形成してなる
ことを特徴とする半導体搬送用治具。1. A semiconductor transfer jig for mounting and transferring a semiconductor wafer, wherein a jig is formed on a semiconductor wafer mounting surface of a main body made of an Al 2 O 3 sintered body. A jig for transporting semiconductors, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4302261A JP2621749B2 (en) | 1992-11-12 | 1992-11-12 | Jig for semiconductor transportation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4302261A JP2621749B2 (en) | 1992-11-12 | 1992-11-12 | Jig for semiconductor transportation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06151555A JPH06151555A (en) | 1994-05-31 |
| JP2621749B2 true JP2621749B2 (en) | 1997-06-18 |
Family
ID=17906888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4302261A Expired - Lifetime JP2621749B2 (en) | 1992-11-12 | 1992-11-12 | Jig for semiconductor transportation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2621749B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3306988B2 (en) * | 1993-04-20 | 2002-07-24 | ソニー株式会社 | Magnetic recording media |
| JPH07147311A (en) * | 1993-11-24 | 1995-06-06 | Tokyo Electron Ltd | Transfer arm |
| JP2010177415A (en) * | 2009-01-29 | 2010-08-12 | Kyocera Corp | Holding tool and suction device including the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5681951A (en) * | 1980-11-10 | 1981-07-04 | Toshiba Corp | Holder of semiconductor substrate |
| JPS6155918A (en) * | 1984-08-27 | 1986-03-20 | Toshiba Mach Co Ltd | Semiconductor manufacturing apparatus |
| JPH03296243A (en) * | 1990-04-13 | 1991-12-26 | Toshiba Ceramics Co Ltd | Tool for handling semiconductor wafer |
| JPH05275513A (en) * | 1992-03-27 | 1993-10-22 | Kyocera Corp | Semiconductor wafer retaining device |
-
1992
- 1992-11-12 JP JP4302261A patent/JP2621749B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5681951A (en) * | 1980-11-10 | 1981-07-04 | Toshiba Corp | Holder of semiconductor substrate |
| JPS6155918A (en) * | 1984-08-27 | 1986-03-20 | Toshiba Mach Co Ltd | Semiconductor manufacturing apparatus |
| JPH03296243A (en) * | 1990-04-13 | 1991-12-26 | Toshiba Ceramics Co Ltd | Tool for handling semiconductor wafer |
| JPH05275513A (en) * | 1992-03-27 | 1993-10-22 | Kyocera Corp | Semiconductor wafer retaining device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06151555A (en) | 1994-05-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19970128 |