JPH05218156A - Circuit measuring terminal and its manufacture - Google Patents

Abstract

PURPOSE:To cause circuit measuring terminals to touch securely and to prevent the terminals from touching each other and shortcircuiting, even when a pad pitch is narrower or the pad size is smaller, or the pad number increases, by using as circuit measuring terminals needle crystals having a constant titled angle against the normal direction of a board surface grown from the board surface. CONSTITUTION:A silicon single-crystal board 21 is manufactured so as to be titled by a constant angle, 5 degrees for example, against the normal direction of the surface of the board 21. And needle crystals 23 are grown on the surface of the board 21 by using the technique of lithography, dry etchin, etc. Then, conductive films are coated on the surfaces of the needle crystals 23 by electroless plating, and measuring needle terminals are formed. If pressure is applied vertically to the board 21 of such measuring terminals as these, the needle crystals 23 are elastically deformed in a constant direction, and the terminals are prevented from touching each other and shortcircuiting. And it becomes possible to miniaturize the needle crystals 23 or wiring patterns and cope with a narrower pitch, since technique used for a fine working process for LSIs is available for their production.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit measuring terminal which is brought into contact with a pad of a semiconductor integrated circuit in order to measure the characteristics of the semiconductor integrated circuit and a method for manufacturing the same.

[0002]

2. Description of the Related Art In a semiconductor integrated circuit, it is necessary to measure the electrical characteristics of the semiconductor integrated circuit several times in order to remove defective products. For example, in the case of an LSI, at the stage of manufacturing circuit elements in a wafer, measurement is performed to test the operation of the circuit elements that make up each chip, and then the chips cut from the wafer are placed in a package. , The TAB tape is mounted, and the measurement for retesting the operation is performed. Of these, the former is usually a probe card having a needle-shaped measuring terminal made of metal such as tungsten. The latter often uses a socket into which outer leads are inserted, but in the case of TAB, a probe card may be used.

FIG. 14 is an explanatory view showing a connection state of a conventional probe card with an LSI. FIG. 15 shows X- in FIG.
It is explanatory drawing which shows an X-ray cross section. As shown in both figures, the probe card 10 includes a card substrate 11 having an opening 11a in the center, a plurality of wiring patterns 12 provided on the back surface of the card substrate 11, and end portions of these wiring patterns 12. It has a thin metal needle 13 that is connected and fixed to the card substrate 11 by a resin (not shown).
The tips of the needles 13 are brought into contact with the pads 16 of the LSI chip 15 formed on the wafer 14, for example, and required measurement is performed in this state.

[0004]

By the way, as the density of the LSI becomes higher, the size of the pad 16 becomes smaller.
The spacing between pads is becoming narrower and the number of pads 16 is also increasing (this tendency is particularly remarkable in logic devices). Conventional probe cards are becoming unable to cope with these situations, causing the following problems.

Problems in the case where the size of the pad becomes small In the conventional probe card 10, the needle 13 is inclined at an acute angle and is in contact with the surface of the pad 16. The needle 13 moves with.
On the other hand, the pad 16 is usually made of an aluminum alloy, and since an oxide film is formed on the surface thereof, a weight is applied to the probe card 10, and the oxide film is rubbed and removed by the needle 13. But if the pad size gets smaller,
When rubbing the oxide film with the needle 13, the needle 13 may protrude from the pad 16 and break the insulating film 17 for surface protection, as shown in FIGS.

Problems when the pad spacing is narrowed In this case, the positional accuracy of the needle 13 of the probe card 10 cannot be maintained. That is, normally, the probe card 10
The positions of the needles 13 are fixed to the wiring pattern 12 by resin, and thereafter, the mutual intervals of the needles 13 are finely adjusted. However, the diameter of the tip of the needle is about 30 μm, and the pad 16
If the pitch is 80 μm, the average distance between the needles is 50 μm
Therefore, manufacturing is becoming difficult.

Problems when the Number of Pads Increases In recent years, it is not uncommon for logic devices to have 300 to 500 pads, and the number of pads is significantly increasing. The conventional probe card shown in FIGS. 14 and 15 is
The needles 13 are arranged in a plane, and the distance between the needles 13 is gradually widened from the tip end portion in contact with the pad 16 toward the end portion connected to the wiring pattern 12. This is to secure the mutual intervals of the wiring patterns 12 and facilitate the connection of the wiring for taking out a signal to the outside. However, when the number of pads increases, it becomes difficult to secure a sufficient mutual space between the wiring patterns 12.

In addition to the above problems associated with the pad size and the like, there are the following problems.

Problems Due to Differences in Coefficient of Thermal Expansion between Resin and LSI Substrate Recently, it is increasing to test LSI in a high temperature state. In this case, although the probe card 10 also has a high temperature to some extent, the silicon wafer 14 as the substrate of the LSI,
For example, the epoxy resin forming the card substrate 11 of the probe card 10 has a different thermal expansion coefficient. For this reason, the position of the needle and the position of the pad are largely displaced, which may make measurement difficult.

Thus, in the conventional probe card,
It was difficult to deal with narrow pitch, small size, many pads, and changes in temperature conditions.

The present invention is intended to solve the above problems, and an object of the present invention is to solve the problems even when the pads have a narrow pitch, a small size, or the number of pads increases.
An object of the present invention is to provide a circuit measurement terminal that can be surely contacted and a manufacturing method thereof.

Another object of the present invention is to provide a circuit measurement terminal and a method for manufacturing the same, which can make reliable contact even when the temperature condition changes.

[0013]

The circuit measuring terminal of the present invention is characterized by using a needle-like crystal grown from the substrate surface with a certain angle of inclination with respect to the normal direction of the substrate surface.

Further, the circuit measuring terminal of the present invention has needle-like crystals grown from the substrate surface with a certain angle of inclination with respect to the normal direction of the substrate surface, and the conductivity provided on the surface of the needle-like crystals. Conductive film and a wiring provided on the surface of the substrate and connected to the conductive film.

Further, the circuit measuring terminal of the present invention is provided on the needle crystal grown from the substrate surface and the needle crystal and the surface of the substrate at an inclination of a constant angle with respect to the normal direction of the substrate surface. And a conductive film as a wiring formed on the surface of the insulating film provided on the needle crystal and on the surface of the insulating film provided on the substrate.

Further, the circuit measuring terminal of the present invention comprises a needle-shaped crystal, a conductive film provided on the surface of the needle-shaped crystal, and a holder for holding the needle-shaped crystal provided with the conductive film. When,
Characterized in that it comprises a wiring connected to the conductive film, the acicular crystal provided with the conductive film is held at an inclination of a certain angle with respect to the normal direction of the surface of the holder. To do.

Further, the circuit measuring terminal of the present invention comprises a conductive single crystal needle crystal, a holder for holding the needle crystal, and a wiring connected to the conductive film. It is characterized by doing.

A method of manufacturing a circuit measuring terminal according to the present invention comprises a step of forming a wiring pattern on a surface of a substrate which is cut out at a certain angle from a specific direction, and forming a first opening in the wiring pattern. Forming an insulating film on the entire surface of the substrate and the wiring pattern, and forming a second opening in the insulating film so that the first opening and a part of the wiring pattern are exposed; A step of disposing a metal forming an alloy with the substrate or a metal having a melting point lower than that of the substrate on the substrate in the opening of the substrate, and in an atmosphere containing one or more substrate material elements constituting the substrate. Incorporating the substrate material element into the droplet formed by the metal on the substrate, and forming needle crystals of the substrate material element on the substrate with a certain angle of inclination with respect to the normal direction of the substrate surface. Process, Of the surface of the needle-like crystals, characterized by comprising the steps of providing a conductive layer to be connected to the exposed wiring pattern from said second opening.

Further, in the method for manufacturing a circuit measuring terminal of the present invention, a metal forming an alloy with this substrate or a metal having a melting point lower than that of the substrate is formed on the surface of the substrate cut out at a certain angle from a specific direction. In the step of arranging and in an atmosphere containing one or more substrate material elements forming the substrate, the substrate material element is introduced into the droplet formed by the metal on the substrate, and the droplet is formed on the substrate. A step of forming a needle-shaped crystal made of a substrate material element with a certain angle of inclination with respect to the normal direction of the substrate surface; a step of providing an insulating film on the needle-shaped crystal and the surface of the substrate; And a step of forming a conductive film as wiring on the surface of the insulating film and the surface of the insulating film provided on the substrate.

Further, in the method of manufacturing a circuit measuring terminal of the present invention, a metal forming an alloy with this substrate or a metal having a melting point lower than that of the substrate is formed on the surface of the substrate cut out at a certain angle from a specific direction. In the step of arranging and in an atmosphere containing one or more substrate material elements forming the substrate, the substrate material element is introduced into the droplet formed by the metal on the substrate, and the droplet is formed on the substrate. A step of forming a needle-shaped crystal made of a substrate material element with a certain angle of inclination with respect to the normal direction of the substrate surface, a step of forming a conductive film on the needle-shaped crystal and the surface of the substrate, and on the surface of the substrate On the conductive film located, the step of forming a holder for holding the needle crystal, the step of removing the conductive film located on the substrate and the surface of the substrate, on the surface of the needle crystal Provided guidance Characterized by comprising the steps of: connecting the sex metal wiring and, a.

Further, the method of manufacturing a circuit measuring terminal of the present invention comprises the step of disposing a metal forming an alloy with the substrate or a metal having a melting point lower than that of the substrate on the surface of the substrate having conductivity. In the atmosphere containing one or more substrate material elements constituting the substrate, the substrate material element is incorporated into the droplet formed by the metal on the substrate, and the conductivity of the substrate material element is formed on the substrate. Forming a needle-shaped crystal having, a step of forming a holder for holding the needle-shaped crystal on the substrate, a step of removing the substrate, a step of connecting the needle-shaped crystal and wiring And are provided.

[0022]

According to the present invention, a needle crystal is grown on a substrate, a conductive film is provided on the surface of the needle crystal, and a wiring pattern connected to the conductive film provided on the surface of the needle crystal is provided. The measurement terminal is provided.

Further, according to the present invention, a conductive acicular crystal is grown on a conductive substrate, and the conductive acicular crystal is separated from the substrate and connected to a wiring to form a measuring terminal. .. Since these needle-like crystals and wiring patterns can be formed by using a technique such as lithographic or dry etching used in a fine processing of LSI, they can be dramatically miniaturized as compared with a conventional probe card. Therefore, even when the size of the pads is reduced, the number of pads is increased, or the pitch between the pads is narrowed, it is possible to sufficiently cope with the situation.

Further, according to the present invention, the needle-shaped crystal is inclined at a constant angle with respect to the normal direction of the substrate so that the needle-shaped crystal is always elastically deformed in the fixed direction even when a load is applied to the substrate, and the terminal is This is to prevent contact / short circuit between them. Such a configuration is particularly effective when the distance between the terminals is narrow and when the terminals are long. The operation will be described below with reference to the drawings.

FIGS. 1 and 2 are views for explaining the operation of the present invention. FIG. 1 is an explanatory view of a circuit measuring terminal when a needle-like crystal is grown while being inclined at a constant angle, and FIG. 2 is a needle-like shape. It is explanatory drawing of the circuit measurement terminal at the time of growing a crystal vertically.

When the distance between the terminals is narrow or the terminals are long, the needle-like crystals 23 are formed on the substrate 21 as shown in FIG.
In the circuit measurement terminal in which the crystal was vertically grown, when needles 23 were formed by vertically applying pressure to the substrate 21 as shown in FIG.
May not elastically deform in a certain direction, and the terminals may come into contact with each other as shown by A in the figure. However, as shown in FIG. 1A, in the circuit measurement terminal in which the needle crystal 23 is grown by inclining at a constant angle (here, 5 degrees) with respect to the normal direction of the substrate 21, FIG. When the pressure is applied vertically to the substrate 21 as described above, the needle-like crystals 23 elastically deform in a certain direction, and the terminals do not come into contact with each other or short-circuit.

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

First, a method of forming needle crystals at a predetermined position on the substrate will be described. This method is described in "RSWagner
and WCEllis: Appl. Phys Letters 4 (1964) 89 ”. FIG. 3 is a diagram for explaining a method for forming such needle crystals.

As shown in FIG. 3A, the surface is (11
The gold (Au) particles 32 are placed at a predetermined position of the silicon (Si) single crystal 31 which is the 1) plane. This is SiH ₄ , S
Si-A in an atmosphere of gas containing silicon such as iCl ₄
Heat to above the melting point of the u alloy. Since the melting point of the Si-Au alloy is low, droplets of this alloy are formed on the mounting portion of the gold particles 32. At this time, silicon is taken in from the atmosphere due to the thermal decomposition of the gas, but the liquid material easily takes in silicon atoms as compared with other solid states, and silicon is gradually excessive in the droplets of the Si-Au alloy. Become. This excess silicon is epitaxially grown on the silicon substrate 31,
As shown in FIG. 3B, the needle-shaped crystal 33 grows along the [111] axis direction. The needle crystal 33 is a single crystal and has the same orientation as the crystal direction of the substrate 31. Further, the diameter of the needle crystal 33 is almost the same as the diameter of the droplet.

Next, a method for manufacturing a circuit measuring terminal according to the present invention, which is based on the above method for forming a needle crystal of silicon, will be described.

4 and 5 show the first embodiment of the present invention.

First, a single crystal body is cut out so that the [111] axis is inclined at a constant angle θ, for example, 5 degrees with respect to the normal line direction of the substrate, and a silicon single crystal substrate 41 is manufactured. The angle θ is preferably set in the range of 0.1 degrees to 20 degrees. If the angle θ is smaller than 0.1 degree, the needle-shaped crystals grown on the substrate may be deformed in different directions, and if the angle θ exceeds 20 degrees, the force applied to the needle-shaped crystal in an oblique direction. Is large, and the needle-shaped crystal may break before the required contact resistance is obtained.

Next, as shown in FIG. 4A, a wiring pattern 42 for signal transmission is formed of tungsten on the silicon single crystal substrate 41. At this time, in order to suppress the reaction between the wiring pattern 42 and the substrate 41, the TiN layer 43 is first provided on the substrate 41, and the wiring pattern 42 is formed on the TiN layer 43. These wiring patterns 42
An opening 44 corresponding to the diameter of the needle-shaped crystal is provided in the portion of the TiN layer 43 where the needle-shaped crystal is formed. Therefore, the substrate 41 is exposed in the opening 44.

Next, as shown in FIG. 4B, C is formed on the entire surface of the substrate 41 including the wiring pattern 42 and the opening 44.
The SiO ₂ film 45 is formed by the VD method or the like, and the SiO ₂ film 45 is formed.
_{2 An} opening 46 is formed in a portion of the film 45 corresponding to the opening 44.
To form. The diameter of the opening 46 is made slightly larger than the diameter of the opening 44, and a part of the wiring pattern 42 is exposed from the opening 46. Here, the opening 4
The size of 6 was 50 μmφ and the size of the opening 44 was 40 μmφ.

Next, as shown in FIG. 4C, gold (Au) 47 is deposited only in the opening 46. As the deposition method, for example, the manufactured silicon single crystal substrate 41 is used.
After thinly depositing Au on the upper surface, electroplating is performed to deposit Au to a thickness of 8 μm, and the SiO ₂ including the inside of the opening 46 is deposited.
A method in which an Au layer is formed on the entire surface of the film 45, the Au layer is removed by an etch-back method, and the Au layer 47 is left only inside the opening 46 can be applied. With this method, 50μmφ
The dot-shaped Au layer is formed in the opening 46.

The diameter of the acicular crystal that grows depends on the volume of the dot-shaped Au layer. That is, the diameter of the needle crystal can be controlled by adjusting the dot diameter or the film thickness of the Au layer. Therefore, it is necessary to appropriately set the size of the opening 46 and the thickness of the Au layer 47 according to the diameter of the needle crystal to be grown. However, it is desirable that the ratio of (Au film thickness) / (dot diameter) is large. This is because if the ratio of (Au film thickness) / (dot diameter) is small, it is divided into a plurality of liquid droplets by the surface tension of the liquid droplets when Au-Si liquid droplets are formed, which will be described later. This is because a plurality of needle-shaped crystals are generated from

Next, the substrate 41 is placed in the quartz reaction tube of an atmospheric pressure CVD apparatus in which the quartz reaction tube is placed in an annular (resistance heating type) furnace, and the Si--Au alloy is mixed in a H ₂ gas atmosphere. Heat to above the crystal point (here, heated at about 950 ° C)
Then, as shown in FIG. 5A, Si-Au droplets 48 are formed on the substrate 41 in the openings 44. Then Si
When a mixed gas of Cl ₄ / H ₂ is introduced, Si needle crystals start to grow. When the growth is continued for about 6 hours under the condition that the SiCl ₄ mole fraction is 0.01, as shown in FIG. Si needle crystals tilted by 5 degrees were obtained.

Finally, as shown in FIG. 5 (c), the surface of the grown needle crystal 49 of silicon is coated with a conductive film of gold 50 by, for example, electroless plating having selectivity. Gold 5 coated on the surface of this needle crystal 49
0 is connected to the tungsten wiring pattern 42 exposed in the opening 46. In this way, the needle-shaped measuring terminal 51 can be formed at a predetermined position on the silicon substrate 41.

According to the above embodiment, this measuring terminal 51
Can be formed by using a technique such as a lithograph or a dry etching used in a fine processing process of an LSI, so that it can be dramatically miniaturized as compared with a conventional probe card. Therefore, even when the size of the pads is reduced, the number of pads is increased, or the pitch between the pads is narrowed, it is possible to sufficiently cope with the situation.

In the case of the above embodiment, since the substrate 41 is silicon, the coefficient of thermal expansion is the same as that of the LSI wafer. Therefore, even when the measurement is performed under a high temperature condition, the positional displacement between the pad and the measurement terminal 51 can be prevented.

As described above, in the conventional probe card, the surface of the pad is obliquely rubbed by the needle to break the natural oxide film on the surface. In this embodiment, the tip of the measuring terminal 51 is made of a conductive material such as a Si—Au alloy or gold coated on the alloy. As shown in FIG. 6, when the tip of the measuring terminal 51 is brought into contact with the surface of the pad 52 made of an aluminum alloy and the substrate 41 is pressed, the natural oxide film 53 is broken by the measuring terminal 51,
The measuring terminal 51 and the pad 52 are brought into contact with each other.

When the substrate 41 is pressed as described above, FIG.
As shown in, the measuring terminal 51 elastically changes and bends. At this time, since the measuring terminals 51 are inclined 5 degrees with respect to the normal direction of the surface of the substrate 41, they are elastically deformed in a certain direction as shown in FIG. 1 and contact / short-circuiting with each other does not occur. In addition, since the needle-shaped crystal that constitutes the measuring terminal 51 is a perfect crystal with almost no crystal defects, it has high mechanical strength and a large elastic deformation range. Specifically, the diameter is 30μ
When a load of 8 gf was applied in the axial direction to the measuring terminal 51 having a length of m and a length of 1 mm, the warpage amount L shown in FIG. 7 was 400 μm. As described above, since the measuring terminal 51 has high mechanical strength, the pad 5 is
The second natural oxide film 53 can be surely broken, contact / short-circuiting with each other does not occur, and it can be used for many times.

By applying ultrasonic waves to the entire substrate 41 and vibrating the measuring terminals 51, the natural oxide film 53 of the pad 52 can be more effectively removed.

Next, referring to FIGS. 8 and 9, the second embodiment of the present invention will be described.
An example will be described.

In the first embodiment, the measuring terminals 51 are insulated from each other by the resistance of the silicon substrate 41. When silicon to which impurities are not added is used, it is possible to obtain a considerably high resistance that has almost no electrical influence on the measuring terminals 51. However, in the second embodiment, the measuring terminals 51 are not electrically connected to each other. A method of more completely insulating the will be described.

First, as shown in FIG. 8A, as in the first embodiment, the [111] axis is 5 with respect to the normal direction of the substrate.
Place the gold particles 62 on the tilted silicon substrate 61,
As shown in FIG. 8B, needle-like crystals 63 are grown on the silicon substrate 61 in the same manner as in the first embodiment. 62 '
Indicates an Au-Si alloy. Next, as shown in FIG. 8C, Si is formed on the entire surface of the silicon substrate 61 and the needle crystals 63.
The O ₂ film 64 is deposited. The SiO ₂ film 64 is formed, for example, by depositing SiO ₂ from a hydrofluoric acid solution in a supersaturated state.

Thereafter, as shown in FIG. 9A, the entire surface is coated with palladium (Pd) 65 by a vapor deposition method. At this time, the substrate 61 is coated while moving so that the portion of the needle crystal 63 is also coated with palladium 65 sufficiently. Further, a resist 66 is applied on the palladium 65 on the substrate surface excluding the surface of the palladium 65 of the needle crystal 63 by a normal spin coating method.

Next, as shown in FIG. 9B, the resist 66 is left only on the portions other than the wiring pattern by the ordinary exposure and development method. Further, gold 67 is coated by electrolytic plating on the portion where palladium 65 is exposed without being covered by resist 66 to form wiring pattern 68.

Finally, as shown in FIG. 9C, after removing the resist 66, the palladium 65 is removed using the gold 67 as a mask.

Thus, as shown in FIG. 10, the measuring terminal 69 connected to the wiring pattern 68 is completed.

According to the second embodiment, the measuring terminal 6
9 cross is completely insulated by the SiO ₂ film 64.
Further, according to this embodiment, the same effect as that of the first embodiment can be obtained.

Next, a third embodiment of the present invention will be described with reference to FIG.

In the above first and second embodiments, the measuring terminal and the wiring pattern are electrically connected on the front surface of the substrate, but they may be connected on the rear surface of the substrate.

That is, as shown in FIG. 11A, needle-like crystals 72 are formed on a silicon substrate 71 in which the [111] axis is tilted at 5 degrees with respect to the normal direction of the substrate, as in the first embodiment. Are grown, and gold 73 is coated on the entire surfaces of the needle crystals 72 and the substrate 71. The method of coating the gold 73 is, for example, vapor deposition, electroless plating, or dipping into a paste liquid.

Next, as shown in FIG. 11B, a resin 74 dissolved in a solvent is applied to the surface of the gold 73 excluding the surface of the gold 73 of the needle crystal 72 by a spin coating method and dried. ..

After that, as shown in FIG. 11C, the substrate 71 and the gold 73 provided on the substrate 71 are scraped off to separate the needle crystals 72 coated with the gold 73.
Subsequently, a wiring pattern 75 is formed of, for example, tungsten on the back surface of the resin 74 and a portion corresponding to the needle crystal 72, and the wiring pattern 75 and the needle crystal 72 are formed.
Connect the gold 73. In this way, the measuring terminal 76
Is completed.

According to the third embodiment, the measuring terminal 7
6 is securely insulated by the resin 74, and
The same effect as that of the second embodiment can be obtained.

Next, a fourth embodiment of the present invention will be described with reference to FIG.

In the above-mentioned first to third embodiments, the semiconductor material Si is used as the substrate, and needles of Si are grown to produce the measuring terminals. However, the substrate is made of a conductive material and has conductivity. It is also possible to grow a needle crystal and produce a measuring terminal. In this example, a case of producing a measurement terminal for a Ni needle crystal will be described.

That is, as shown in FIG.
N in which the [100] axis is inclined at 5 degrees with respect to the normal direction of the substrate
An acicular crystal 82 is grown on an i single crystal substrate 81. Ni
The CVD method using vapor phase transport of nickel chloride by the temperature difference method can be used to grow the needle-shaped crystal of.
That is, first, an Au film is formed on the Ni single crystal substrate 81 by vapor deposition or plating, and is patterned into dots by photolithography. When this Ni single crystal substrate 81 is placed in the growth region of the CVD apparatus shown in FIG. 13 and HCl is brought into contact with metal Ni 80 in the production region and heated to about 950 ° C., NiCl ₂ is produced. This NiCl ₂ vapor is sent to a growth region heated to about 1200 degrees and mixed with hydrogen gas. Au-Ni alloy droplets are formed on the Ni single crystal substrate 81 placed in the growth region, and NiCl ₂ is reduced on the surface of the droplets to form Ni needle crystals 82.

Next, as shown in FIG. 12B, the resin 83 dissolved in a solvent is applied to the surface of the substrate 81 excluding the surface of the needle crystals 82 by a spin coating method and dried.

Thereafter, as shown in FIG. 12C, the substrate 81 is shaved off to separate the needle crystals 82. Subsequently, a wiring pattern 84 is formed of, for example, tungsten on the back surface of the resin 83 and a portion corresponding to the needle crystal 82, and the wiring pattern 84 and the needle crystal 82 are connected. In this way, the measuring terminal 85 is completed.

According to the fourth embodiment, the measuring terminal 8
The resin 5 is reliably insulated by the resin 83, and the same effect as that of the third embodiment can be obtained. Furthermore, in this embodiment, it is not necessary to provide a conductive film on the needle-shaped crystal, and the process can be simplified.

In the above first to fourth embodiments,
Needle-like crystals were grown from a silicon substrate or a nickel substrate, but the material of the substrate is not limited to silicon, and for example, SiC [Si], Zn [Zn-Bi],
Cd [Cd-Pb, Cd-Sn], TiC on Ni substrate
[Ni-Ti-C], CdTe [NH ₄ Cl], Si ₃
N ₄ , SnO ₂ [Sn], GaAs [Ga], rare ear
th boride (including LaB ₆ ), GaP [Ga], Al ₂ O
Any material capable of controlling growth such as ₃ , AlN, and Fe may be used. In addition, the above [] indicates a material that becomes a liquid phase (droplet). The metal disposed on the substrate may be a metal that forms droplets on the substrate, that is, a metal that forms an alloy with the substrate or a metal that has a lower melting point than the substrate.

When silicon is used as the material of the substrate, the metal for alloying with silicon is
The material is not limited to gold, and any material that can be a low melting point alloy may be used.

Further, although gold was coated on the surface of the needle crystal as a conductive film, the coating material is not limited to gold, and other conductive material may be used. However, a noble metal that does not easily form an oxide is desirable.

In the embodiment described above, the case where the operating characteristic of the semiconductor integrated circuit is measured by the circuit measuring terminal has been described, but the circuit measuring terminal of the present invention is not limited to the semiconductor integrated circuit. It can also be applied to measurement of other circuits.

[0068]

As described above in detail, according to the present invention,
It is possible to provide a circuit measurement terminal and a method for manufacturing the same, which can make reliable contact even when the pads have a narrow pitch and a small size and the number of pads increases. Further, according to the present invention, even if a load is applied to the substrate, the needle-shaped crystals are always elastically deformed in a certain direction, and it is possible to prevent contact / short circuit between terminals.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a circuit measurement terminal when a needle-shaped crystal is tilted at a constant angle to grow according to the present invention.

FIG. 2 is an explanatory diagram of a circuit measuring terminal when a needle crystal is vertically grown.

3 (a) and 3 (b) are views for explaining a method for forming needle-like crystals which is the basis of the present invention.

4 (a) to 4 (c) are cross-sectional views sequentially showing a manufacturing process according to a first embodiment of the present invention.

5 (a) to 5 (c) are cross-sectional views sequentially showing a manufacturing process according to a first embodiment of the present invention.

FIG. 6 is a side sectional view showing a contact state between a measuring terminal and a pad according to the first embodiment.

FIG. 7 is a side view showing a state in which the measurement terminal according to the first embodiment is brought into contact with the pad and pressed.

8 (a) to 8 (c) are cross-sectional views sequentially showing a manufacturing process according to a second embodiment of the present invention.

9 (a) to 9 (c) are cross-sectional views sequentially showing a manufacturing process according to a second embodiment of the present invention.

FIG. 10 is a plan view of FIG. 9 (c).

11 (a) to 11 (c) are cross-sectional views sequentially showing a manufacturing process according to a third embodiment of the present invention.

12 (a) to 12 (c) are cross-sectional views sequentially showing a manufacturing process according to a fourth embodiment of the present invention.

FIG. 13 is a diagram showing a CVD apparatus for growing Ni needle crystals.

FIG. 14 is a plan view showing a conventional probe card.

15 is a sectional view taken along line 2-2 of FIG.

FIG. 16 is a diagram shown for explaining the relationship between a conventional needle and a pad.

FIG. 17 is a side sectional view of FIG.

[Explanation of symbols]

21, 41, 61, 71, 81 Substrate 42, 68, 75, 84 Wiring pattern 23, 49, 63, 72, 82 Needle crystal 50, 67, 73 Gold 51, 69, 76, 85 Measuring terminal 52 Pad 62 Gold particles 64 SiO ₂ film 65 Palladium 74,83 Resin

Front page continuation (72) Inventor Toru Watanabe 72 Horikawa-cho, Sachi-ku, Kawasaki-shi, Kanagawa Stock company, Toshiba Horikawa-cho factory (72) Inventor Katsuya Okumura, Komukai-Toshiba-cho, Kawasaki, Kanagawa Company Toshiba Tagawa factory

Claims (15)

[Claims] 1. A circuit measuring terminal using a needle-shaped crystal grown from a surface of a substrate with a certain angle of inclination with respect to a direction normal to the surface of the substrate. 2. A needle-like crystal grown from the substrate surface at a certain angle with respect to the normal direction of the substrate surface, a conductive film provided on the surface of the needle-like crystal, and provided on the substrate surface. And a wiring connected to the conductive film, the circuit measuring terminal. 3. The circuit measuring terminal according to claim 2, wherein the substrate has a high resistance. 4. A needle-shaped crystal grown from the surface of the substrate at an inclination of a certain angle with respect to a normal to the substrate surface, an insulating film provided on the surface of the needle-shaped crystal and the substrate, and the needle-shaped crystal. A circuit measurement terminal, comprising: a surface of an insulating film provided on a crystal; and a conductive film as a wiring formed on a surface of the insulating film provided on a substrate. 5. The circuit measuring terminal according to claim 1, wherein the substrate is a substrate cut out at a certain angle with respect to a specific direction. 6. The circuit measuring terminal according to claim 5, wherein the substrate is Si, the specific orientation is the [111] axis, and the cutting angle is in the range of 0.1 to 20 degrees. 7. A needle-shaped crystal, a conductive film provided on the surface of the needle-shaped crystal, a holder for holding the needle-shaped crystal provided with the conductive film, and a conductive film connected to the conductive film. The circuit-measurement terminal is characterized in that the needle-shaped crystal provided with the conductive film is held at a certain angle with respect to the normal direction of the surface of the holding body. 8. A single crystal needle crystal having conductivity,
A circuit measurement terminal, comprising: a holder for holding the needle-shaped crystal; and a wire connected to the conductive film. 9. The circuit measurement terminal according to claim 8, wherein the conductive single-crystal needle-shaped crystal is held with a certain angle of inclination with respect to the normal direction of the surface of the holding body. 10. A step of forming a wiring pattern on a surface of a substrate that is cut out at a certain angle from a specific direction and forming a first opening in the wiring pattern, and an insulating film on the entire surface of the substrate and the wiring pattern. To form
Forming a second opening in the insulating film so that the first opening and a part of the wiring pattern are exposed; and forming an alloy of the substrate and the alloy on the substrate in the first opening. A step of disposing a metal to be formed or a metal having a melting point lower than that of the substrate, and a droplet formed by the metal on the substrate in an atmosphere containing one or more substrate material elements constituting the substrate The step of incorporating the substrate material element into the substrate, and forming a needle-shaped crystal of the substrate material element on the substrate with a certain angle of inclination with respect to the normal line direction of the substrate surface; And a step of providing a conductive film connected to the wiring pattern exposed from the opening of the circuit measurement terminal. 11. A step of disposing a metal forming an alloy with the substrate or a metal having a melting point lower than that of the substrate on the surface of the substrate cut out at a certain angle from a specific direction, and 1 or 2 which constitutes the substrate. In an atmosphere containing two or more substrate material elements, the substrate material elements are taken into the droplets formed by the metal on the substrate, and needle-like crystals made of the substrate material elements are formed on the substrate surface. A step of forming an angle of inclination with the normal direction, a step of providing an insulating film on the surface of the needle-shaped crystal and the substrate, a step of forming the insulating film on the surface of the needle-shaped crystal, and the substrate. And a step of forming a conductive film as a wiring on the surface of the insulating film, the method for manufacturing a circuit measuring terminal. 12. A step of disposing a metal forming an alloy with the substrate or a metal having a melting point lower than that of the substrate on the surface of the substrate cut out at a certain angle from a specific orientation, and 1 or 2 constituting the substrate. In an atmosphere containing two or more substrate material elements, the substrate material elements are taken into the droplets formed by the metal on the substrate, and needle-like crystals made of the substrate material elements are formed on the substrate surface. Forming the conductive film on the surface of the needle-shaped crystal and the substrate, and forming the needle-shaped crystal on the conductive film located on the surface of the substrate. Forming a holder for holding the substrate, removing the substrate and the conductive film located on the surface of the substrate, and connecting the conductive metal provided on the surface of the needle crystal and the wiring. Process, A method for manufacturing a circuit measuring terminal, comprising: 13. The circuit measurement according to claim 10, wherein the substrate is Si, the specific orientation is the [111] axis, and the cutting angle is in the range of 0.1 to 20 degrees. Method for manufacturing terminals. 14. A step of disposing a metal forming an alloy with the substrate or a metal having a melting point lower than that of the substrate on the surface of the substrate having conductivity, and one or more substrate material elements constituting the substrate. In an atmosphere containing, forming a conductive needle-like crystal made of the substrate material element on the substrate by incorporating the substrate material element into a droplet formed by the metal on the substrate; Forming a holding body for holding crystal-like crystals on the substrate, removing the substrate, and connecting the needle-like crystals and wirings, circuit measurement characterized by the following: Method for manufacturing terminals. 15. The method for manufacturing a circuit measuring terminal according to claim 14, wherein the substrate is a substrate that is cut out at a certain angle with respect to a specific orientation.