JP2587804B2 - Semiconductor device - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device containing semiconductor elements for testing, for producing various kinds in small quantities, and the like.

[Prior Art] Conventionally, there is a semiconductor device in which a semiconductor element 2 is housed in a package 1 made of resin, ceramic, or the like as shown in FIG.

In this semiconductor device, the arrangement positions of the electrodes 3 such as a power supply electrode, a ground electrode, and a signal electrode provided around the surface of the semiconductor element 2 are variously different depending on the type of the semiconductor element 2.

When this semiconductor device is mounted on a printed circuit board or the like having a wiring circuit standardized to a certain standard, a power supply terminal, a ground terminal, a signal terminal, and other terminals of the wiring circuit on the printed circuit board are arranged in accordance with an arrangement position of the terminals. It is necessary to electrically connect predetermined electrodes 3 such as a power supply electrode, a ground electrode, and a signal electrode of the semiconductor element 2 housed in the package 1 to a desired inner lead 5b inside the package 1 away from the electrodes by a long wire 6. . Then, a desired outer lead projecting outside the package 1 connected to the desired inner lead 5b
It is necessary to electrically connect 5a to predetermined terminals such as a power terminal, a ground terminal, and a signal terminal of a wiring circuit such as a printed circuit board.

By the way, in this way, the predetermined electrode 3 of the semiconductor element is
Is electrically connected to a desired inner lead 5b distant from the electrode by a long wire 6a to form a semiconductor device. As shown by a broken line in FIG. 5, the long wire 6a
Is crossed with the wire 6 for electrically connecting the other electrode 3 of the same semiconductor element and the inner lead 5b near the electrode, and the wires 6a and 6 are in contact with each other and are electrically short-circuited. Resulting in.

Therefore, in order to prevent such mutual contact of the wires 6a and 6, in the conventional semiconductor device, as shown in FIG. 5, the electrode 3 of the semiconductor element is connected to the inner lead 5b near the electrode by a short wire. It had to be electrically connected at 6 mag.

Therefore, when the conventional semiconductor device is mounted on a printed board or the like, every time the arrangement position of the electrodes 3 such as the power supply electrode, the ground electrode, and the signal electrode around the surface of the semiconductor element 2 housed in the package 1 changes, According to that,
A power supply terminal of a wiring circuit such as a printed circuit board for electrically connecting outer leads 5a connected to inner leads 5b electrically connected to wires 6 near the electrodes 3 of the semiconductor element,
The arrangement position of the terminals such as the ground terminal and the signal terminal had to be changed.

[Problems to be Solved by the Invention] However, power supply electrodes around the surface of the semiconductor element 2,
Every time the arrangement position of the electrodes 3 such as the ground electrode and the signal electrode is changed, the arrangement position of the terminals such as the power supply terminal, the ground terminal, and the signal terminal of the wiring circuit such as the printed circuit board on which the semiconductor device is mounted is changed accordingly. Doing so hinders the standardization and unification of wiring circuits such as a printed circuit board, and makes the work of forming the printed circuit board and the like troublesome and time-consuming.

This is particularly true by mounting a semiconductor device on which a semiconductor element 2 for testing, in which various arrangement positions of the electrodes 3 such as a power supply electrode, a ground electrode, and a signal electrode are variously varied, and for producing various kinds in small quantities, on a printed circuit board or the like, When a variety of electronic devices were formed, the pain was remarkably felt.

The present invention has been made in order to solve such a problem, and a predetermined electrode such as a power supply electrode, a ground electrode, and a signal electrode of a semiconductor element housed in a package and a desired inner part in the package away from the electrode are provided. A semiconductor device capable of easily and freely electrically connecting a lead, wherein a wire for electrically connecting a predetermined electrode of the semiconductor element and a desired inner lead remote from the electrode is formed of the same semiconductor element. It is an object of the present invention to provide a semiconductor device in which there is no possibility that both wires will cross each other when they cross a wire for electrically connecting another electrode to an inner lead near the electrode.

[Means for Solving the Problems] In order to achieve the above object, a semiconductor device of the present invention comprises:
In a semiconductor device having a plurality of inner leads arranged side by side around a semiconductor element housed in a package and electrically connected to electrodes of the element, an inner lead near a predetermined electrode of the element and a desired inner lead are provided. Are electrically connected to each other by a circuit pattern provided on an intermediate portion of the plurality of inner leads via an insulating film, and a predetermined electrode of the element is connected to the circuit pattern near the electrode. The inner leads of the electrically connected inner leads are electrically connected by wires.

The semiconductor device of the present invention may have a structure in which the inner leads exposed in the through holes provided in the insulating film are electrically connected to the circuit pattern.

Further, the circuit pattern may include a circuit element such as a resistor, a capacitor, and an inductor.

[Operation] In the semiconductor device of the present invention, the predetermined electrode of the semiconductor element is electrically connected to the inner end of the inner lead, which is electrically connected to the circuit pattern near the electrode, through a short wire via a short wire. Can connect. At the same time, an inner lead electrically connected to a predetermined electrode of the semiconductor element can be electrically connected to a circuit pattern near the inner lead for a short distance via a short wire or the like. Furthermore, a desired inner lead separated from a predetermined electrode of the semiconductor element can be electrically connected to a circuit pattern near the inner lead via a short wire or the like for a short distance. Then, a predetermined electrode of the semiconductor element can be electrically connected to a desired inner lead remote from the electrode via an inner lead near the predetermined electrode of the semiconductor element, a circuit pattern, a plurality of short wires, and the like.

As a result, a wire for electrically connecting a predetermined electrode of the semiconductor element to a desired inner lead separated from the electrode becomes longer, and the wire becomes longer between other electrodes of the semiconductor element and the inner lead near the electrode. A state of being crossed with a wire for electrically connecting the inner end to the inner end can be prevented, so that both wires are prevented from contacting each other and electrically short-circuited.

Further, since the circuit pattern is provided over the middle part of the plurality of inner leads, the inner ends of the plurality of inner leads provided side by side around the semiconductor element are not hindered by the circuit pattern. , And can be arranged so as to be exposed near the semiconductor element. Further, a plurality of other electrodes including a predetermined electrode of the semiconductor element can be electrically connected to the inner ends of the inner leads with a short distance through short wires. Then, a high-frequency signal can be transmitted with less transmission loss over the electrodes of the semiconductor elements and the inner leads.

Further, as described above, the inner ends of the plurality of inner leads provided side by side around the semiconductor element are arranged so as to be exposed near the semiconductor element without being disturbed by the circuit pattern. The distance between the inner end and a plurality of other electrodes including a predetermined electrode of the semiconductor element corresponding thereto can be made substantially constant. Then, all the electrodes of the semiconductor element to be electrically connected to the inner lead including the predetermined electrode of the semiconductor element are connected to the inner end of the corresponding inner lead by using a wire bonding device or the like to have a substantially constant length. Electrical connection can be made automatically via a short wire without any hassle.

Further, since the circuit pattern is provided over the middle part of the plurality of inner leads, the semiconductor device can be prevented from being increased in size by the provision of the circuit pattern.

Further, since the circuit pattern is provided over the middle part of the plurality of inner leads via the insulating film,
The insulating film can prevent the circuit pattern from contacting the inner leads and electrically short-circuiting them.

Further, in the semiconductor device of the present invention in which the inner leads exposed in the through holes provided in the insulating film are electrically connected to the circuit pattern, the inner lead portions exposed in the through holes provided in the insulating film are provided. Can be electrically connected to a nearby circuit pattern through a through hole with a short wire. Then, the wire is a wire for electrically connecting the electrode of the semiconductor element and the inner end of the inner lead near the electrode, or a wire for electrically connecting the circuit pattern and the inner lead near the electrode. It is possible to prevent the two wires from coming into contact with each other and causing an electrical short circuit.

Further, in the semiconductor device of the present invention in which the circuit pattern is provided with circuit elements such as a register, a capacitor, and an inductor, the register mounted on a printed board or the like,
Circuit elements such as capacitors and inductors can be housed in the semiconductor device. In addition, the number of circuit elements mounted on a printed circuit board or the like can be reduced correspondingly, and the electronic device can be downsized.

Example Next, an example of the present invention will be described with reference to the drawings.

1a and 2 show a preferred embodiment of the semiconductor device of the present invention. FIG. 1a is a partially broken plan view, and FIG. 2 is a sectional view taken along line XX of FIG. 1a. Hereinafter, this semiconductor device will be described.

In the illustrated semiconductor device, a plurality of inner leads 5b for electrically connecting the electrodes 3 of the semiconductor element 2 housed in a package 1 are radially arranged at a predetermined pitch.

Specifically, a semiconductor device is formed using a lead frame 7 as shown in FIG. The lead frame 7 is provided around a stage 8 on which the semiconductor element 2 is mounted.
It has a shape in which a plurality of strip-shaped leads 5 are arranged substantially radially. The inside of the lead 5 is used for an inner lead 5b. The outside of the lead 5 is used for an outer lead 5a.

Stage 8 and multiple inner leads surrounding it
An insulating film 11 is mounted on the middle part of 5b. The insulating film 11 is formed of a polyimide resin or the like having a thickness of about 0.1 mm. A rectangular pad made of a metal layer 14 is provided on the upper surface of the insulating film 11 immediately above the stage 8.

A narrow band-shaped circuit pattern 10 is provided on the upper surface of the insulating film 11 mounted over the middle part of the plurality of inner leads 5b. The circuit pattern 10 is provided on the middle of the plurality of inner leads 5b around the stage 8 via the insulating film 11. The insulating film 11 prevents the circuit pattern 10 from contacting the inner leads 5b and electrically short-circuiting.

Square pad, circuit pattern 10, insulating film
The metal layer 14 made of a copper alloy or the like having a thickness of about 18 μm and adhered to the upper surface is formed by etching.

The lower surface of the insulating film 11 is connected to the stage 8 and the inner lead via an insulating adhesive layer 15 provided on the lower surface.
5b is continuously applied over the middle surface.

The predetermined electrode 3 of the power supply electrode, the ground electrode, or the signal electrode of the semiconductor element 2 is electrically connected to a desired inner lead 5b remote from the electrode.

Specifically, the semiconductor element 2 is mounted on a rectangular pad on the upper surface of the stage 8. Then, the predetermined electrode 3 of the semiconductor element is shortened via the short wire 6 to the inner end of the inner lead 5b exposed in the trapezoidal through hole 16a formed in the portion of the insulating film 11 in the vicinity thereof. Electrically connected.

In a portion of the insulating film 11 just above the middle of the inner lead 5b electrically connected to the predetermined electrode 3 of the semiconductor element by the wire 6, a through hole 16b of a small square is formed. And
The inner lead 5b exposed in the through hole 16b and the circuit pattern 10 near the inner lead 5b are electrically connected to each other through a short wire 6 for a short distance.

Similarly, a rectangular through hole 16b is also formed in a portion of the insulating film 11 just above a middle portion of a desired inner lead 5b remote from the predetermined electrode 3 of the semiconductor element. And
A desired inner lead 5b exposed in the through hole 16b and a circuit pattern 10 near the desired inner lead 5b are electrically connected to each other through a short wire 6 for a short distance.

Then, the predetermined electrode 3 of the semiconductor element and a desired inner lead 5b separated from the electrode are electrically connected via the inner lead 5b near the predetermined electrode 3 of the semiconductor element, the circuit pattern 10, and the plurality of short wires 6. Connected.

The other electrode 3 of the semiconductor element to be electrically connected to the inner lead 5b has a short wire 6 connected to the inner end of the inner lead 5b exposed in a through hole 16a formed in the insulating film 11 near the electrode. Are electrically connected via a short distance.

In other words, all the electrodes 3 of the semiconductor element to be electrically connected to the inner leads 5b including the predetermined electrodes 3 of the semiconductor element are connected to the inner ends of the inner leads 5b in the vicinity thereof via the short wires 6. , Are electrically connected for a short distance.

Then, a wire 6 for electrically connecting the predetermined electrode 3 of the semiconductor element and a desired inner lead 5b remote from the electrode is electrically connected to the other electrode 3 of the semiconductor element and the inner lead 5b in the vicinity thereof. The wires 6 cross the connecting wires 6 to prevent the wires 6 from contacting each other.

As shown in FIG. 1A and FIG. 2, the semiconductor element 2 has a stage 8 on which the element is mounted, an inner lead 5b around the stage, and an insulating film 11 over a middle part of the inner lead. Circuit pattern 10 and wire 6 provided via
At the same time, it is sealed inside the resin 17.

The dam bar 18 and the like of the lead frame connecting between the outer leads 5a protruding to the outside of the resin 17 move the semiconductor element 2 to the stage 8 and the inner leads 5 as described above.
b, together with the circuit pattern 10 and the wire 6 provided over the middle part of the inner lead via the insulating film 11 and then sealed in the resin 17 and then removed. Each lead 5 of the lead frame is separated and made independent. Then, a semiconductor device in which the semiconductor element 2 is housed in the package 1 made of the resin 17 is formed.

The semiconductor device shown in FIGS. 1A and 2 is configured as described above. In this semiconductor device, when a power supply current or an electric signal is applied to the outer lead 5a protruding outside the package 1, the current The inner leads 5b inside the package 1 connected to the outer leads 5a, the circuit patterns 10 electrically connected to the inner leads and the wires 6,
The power supply current or the electric signal is transmitted to the predetermined electrode 3 of the semiconductor element electrically connected to the circuit pattern via the inner lead 5b, and the power supply current or the electric signal is connected to the outer lead 5a. The semiconductor element 2 operates by being transmitted to the electrode 3 of the semiconductor element which is electrically connected by the above.

In the above-described semiconductor device, as shown in FIG. 3, the circuit pattern 10 includes a circuit element 12 such as a resistor, a capacitor, and an inductor.
At the same time, it may be sealed inside the resin 17. Then, a circuit element to be mounted on a printed board or the like may be housed in the package 1 made of the resin 17. In addition, the number of circuit elements provided on a printed circuit board or the like may be reduced accordingly to achieve high integration and compact electronic equipment using the semiconductor device.

Also, an insulating material (not shown) is provided on the upper surface of the insulating film 11.
In this case, the circuit pattern 10 may be provided as a single layer or two or more layers so that the circuit pattern 10 has a multilayer structure and a high density.

Further, in the above-described semiconductor device, as shown in FIG. 1a, some electrodes 3 of the semiconductor element are left open without being connected to the inner leads 5b near the electrodes. By elaborating the arrangement of the ten, all the electrodes 3 of the semiconductor element may be electrically connected to the inner ends of the inner leads 5b in the vicinity thereof by wires 6 without leaving any space.

As shown in FIG. 4, a circuit pattern 10 is provided on an intermediate portion of a small number of inner leads 5b of a part of the lead frame via an insulating film 11, and the circuit pattern is provided. 10 and the inner lead 5b portion exposed around the insulating film 11 near it, or the insulating film 11
The inner lead 5b exposed in a through-hole (not shown) is electrically connected by a wire 6 or a predetermined electrode 3 of a semiconductor element mounted on a stage 8 and an inner lead near the electrode. For example, the predetermined electrode 3 of the semiconductor element is electrically connected to a desired inner lead 5b remote from the electrode through the circuit pattern 10 and the plurality of wires 6 by electrically connecting the inner end of the wire 5b to the inner end of the wire 5b. The connection may be made.

In the above-described semiconductor device, as shown in FIG. 1b, all the electrodes 3 of the semiconductor element housed in the package 1 are connected to the inner leads 5b or the circuit patterns 10 by wires 6
It is good also as a structure electrically connected by.

In some cases, the arrangement of the circuit patterns 10 is devised so that all the electrodes 3 of the semiconductor element housed in the package 1 are externally connected to the package 1 via the inner leads 5 b, the circuit patterns 10, and the wires 6. It may be configured to be electrically connected to the protruding outer lead 5a.

Further, between the electrode 3 of the semiconductor element and the inner lead 5b and between the inner lead 5b and the circuit pattern 10 may be electrically connected using a wire such as a gold ribbon having excellent high-frequency characteristics. Even so, a semiconductor device having the same operation as the above-described semiconductor device can be provided.

Further, the semiconductor device of the present invention can be used for a semiconductor device using a wire-shaped inner lead or a semiconductor device using a pre-mold package made of a resin or the like in which the inner lead is embedded.

[Effects of the Invention] As described above, according to the semiconductor device of the present invention,
A predetermined electrode of the semiconductor element housed in the package, and a desired inner lead separated from the electrode, via a circuit pattern provided on an intermediate portion of the plurality of inner leads via an insulating film, It can be easily and easily electrically connected with a short wire.

A wire for electrically connecting a predetermined electrode of the semiconductor element and a desired inner lead separated from the electrode electrically connects another electrode of the same semiconductor element to the inner lead near the electrode. And the two wires cross each other to prevent an electrical short circuit.

Therefore, according to the semiconductor device of the present invention, a power supply electrode, a ground electrode, a signal electrode, and the like are arranged in accordance with an arrangement position of terminals such as a power supply terminal, a ground terminal, and a signal terminal of a wiring circuit such as a printed circuit board on which the semiconductor device is mounted. When a predetermined electrode of a semiconductor element having various electrode arrangements is electrically connected to a desired inner lead remote from the electrode via a wire, the predetermined electrode of the semiconductor element is electrically connected to the desired inner lead. The wires for electrical connection are crossed with the wires for electrically connecting the other electrodes of the semiconductor element and the inner leads in the vicinity thereof, so that both wires do not contact each other. It is possible to eliminate the necessity of wiring with great effort.

As a result, according to the semiconductor device of the present invention, the power supply electrode,
A semiconductor device containing semiconductor elements for testing, various kinds of small-quantity production, etc., in which the arrangement of electrodes such as a ground electrode and a signal electrode is variously different, and the arrangement of terminals such as a power supply terminal, a ground terminal, and a signal terminal is constant. A semiconductor device for mounting on a printed circuit board or the like having a standardized and unified wiring circuit can be easily and freely formed.

Also, the distance between all the electrodes of the semiconductor element and the inner end of the inner lead for electrically connecting the same is made almost constant, and the inner lead including the predetermined electrode of the semiconductor element is electrically connected to the inner lead. All electrodes of the semiconductor element to be connected are
By using a wire bonding device or the like, a short wire having a substantially constant length can be automatically and electrically connected to the inner end of the inner lead corresponding to the inner lead without any trouble.

In addition, the provision of the circuit pattern prevents the semiconductor device from increasing in size, so that the semiconductor device can be made more compact.

[Brief description of the drawings]

FIG. 1a is a partially broken plan view of the semiconductor device of the present invention, FIG. 1b is a partially broken plan view of the semiconductor device of the present invention, and FIG.
FIG. 3 is a cross-sectional view of the semiconductor device taken along line XX of FIG. 3, FIG. 3 is an explanatory view of a method of forming the semiconductor device of FIG. 1, FIG. It is a partially broken plan view of an apparatus. 1 ... package, 2 ... semiconductor element, 3 ... electrode, 6 ...
… Wire, 5a …… Outer lead, 5b …… Inner lead, 10 …… Circuit pattern, 11 …… Insulating film, 12 …… Circuit element, 16a, 16b …… Hole, 17… Resin.

Claims (3)

(57) [Claims] 1. A semiconductor device comprising a plurality of inner leads arranged side by side around a semiconductor element housed in a package and electrically connected to electrodes of the element, wherein an inner lead near a predetermined electrode of the element is provided. A desired inner lead is electrically connected to a desired inner lead by a circuit pattern provided on an intermediate portion of the plurality of inner leads via an insulating film, and a predetermined electrode of the element is placed near the electrode. A semiconductor device electrically connected by wires to inner ends of inner leads electrically connected to the circuit pattern. 2. The semiconductor device according to claim 1, wherein the inner leads exposed in the through holes provided in the insulating film are electrically connected to the circuit pattern. 3. A circuit pattern comprising: a resistor, a capacitor,
The semiconductor device according to claim 1, wherein the semiconductor device includes a circuit element such as an inductor.