JP2555004B2 - スパッタリング装置 - Google Patents

スパッタリング装置

Info

Publication number
JP2555004B2
JP2555004B2 JP5354024A JP35402493A JP2555004B2 JP 2555004 B2 JP2555004 B2 JP 2555004B2 JP 5354024 A JP5354024 A JP 5354024A JP 35402493 A JP35402493 A JP 35402493A JP 2555004 B2 JP2555004 B2 JP 2555004B2
Authority
JP
Japan
Prior art keywords
magnet
substrate
target
adjacent
sputtering apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5354024A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07197254A (ja
Inventor
司 小林
直吉 細川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ANERUBA KK
Original Assignee
ANERUBA KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ANERUBA KK filed Critical ANERUBA KK
Priority to JP5354024A priority Critical patent/JP2555004B2/ja
Priority to US08/223,637 priority patent/US5458759A/en
Priority to TW083103451A priority patent/TW272237B/zh
Priority to KR1019940009608A priority patent/KR960011245B1/ko
Publication of JPH07197254A publication Critical patent/JPH07197254A/ja
Application granted granted Critical
Publication of JP2555004B2 publication Critical patent/JP2555004B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP5354024A 1991-08-02 1993-12-30 スパッタリング装置 Expired - Fee Related JP2555004B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP5354024A JP2555004B2 (ja) 1993-12-30 1993-12-30 スパッタリング装置
US08/223,637 US5458759A (en) 1991-08-02 1994-04-06 Magnetron sputtering cathode apparatus
TW083103451A TW272237B (enExample) 1993-12-30 1994-04-19
KR1019940009608A KR960011245B1 (ko) 1993-12-30 1994-05-02 스퍼터링 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5354024A JP2555004B2 (ja) 1993-12-30 1993-12-30 スパッタリング装置

Publications (2)

Publication Number Publication Date
JPH07197254A JPH07197254A (ja) 1995-08-01
JP2555004B2 true JP2555004B2 (ja) 1996-11-20

Family

ID=18434800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5354024A Expired - Fee Related JP2555004B2 (ja) 1991-08-02 1993-12-30 スパッタリング装置

Country Status (3)

Country Link
JP (1) JP2555004B2 (enExample)
KR (1) KR960011245B1 (enExample)
TW (1) TW272237B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3403550B2 (ja) 1995-06-29 2003-05-06 松下電器産業株式会社 スパッタリング装置とスパッタリング方法
JP2000239841A (ja) * 1999-02-24 2000-09-05 Ulvac Japan Ltd スパッタリング方法と装置
WO2006082863A1 (ja) * 2005-02-02 2006-08-10 Hitachi Metals, Ltd. マグネトロンスパッタリング用磁気回路装置及びその製造方法
JP2007051337A (ja) * 2005-08-18 2007-03-01 Ulvac Japan Ltd スパッタ電極及びスパッタ電極を備えたスパッタリング装置
WO2009069672A1 (ja) * 2007-11-28 2009-06-04 Ulvac, Inc. スパッタ装置及び成膜方法
TWI486469B (zh) * 2010-04-22 2015-06-01 Hon Hai Prec Ind Co Ltd 鍍膜系統
WO2011146673A2 (en) * 2010-05-19 2011-11-24 General Plasma, Inc. High target utilization moving magnet planar magnetron scanning method
JP7390922B2 (ja) * 2020-02-18 2023-12-04 東京エレクトロン株式会社 カソードユニットおよび成膜装置

Also Published As

Publication number Publication date
JPH07197254A (ja) 1995-08-01
KR960011245B1 (ko) 1996-08-21
TW272237B (enExample) 1996-03-11
KR950018638A (ko) 1995-07-22

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