JP2555004B2 - スパッタリング装置 - Google Patents
スパッタリング装置Info
- Publication number
- JP2555004B2 JP2555004B2 JP5354024A JP35402493A JP2555004B2 JP 2555004 B2 JP2555004 B2 JP 2555004B2 JP 5354024 A JP5354024 A JP 5354024A JP 35402493 A JP35402493 A JP 35402493A JP 2555004 B2 JP2555004 B2 JP 2555004B2
- Authority
- JP
- Japan
- Prior art keywords
- magnet
- substrate
- target
- adjacent
- sputtering apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 43
- 239000000758 substrate Substances 0.000 claims description 48
- 230000002093 peripheral effect Effects 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 230000000712 assembly Effects 0.000 claims 1
- 238000000429 assembly Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 20
- 238000009826 distribution Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 14
- 239000010409 thin film Substances 0.000 description 12
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5354024A JP2555004B2 (ja) | 1993-12-30 | 1993-12-30 | スパッタリング装置 |
| US08/223,637 US5458759A (en) | 1991-08-02 | 1994-04-06 | Magnetron sputtering cathode apparatus |
| TW083103451A TW272237B (enExample) | 1993-12-30 | 1994-04-19 | |
| KR1019940009608A KR960011245B1 (ko) | 1993-12-30 | 1994-05-02 | 스퍼터링 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5354024A JP2555004B2 (ja) | 1993-12-30 | 1993-12-30 | スパッタリング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07197254A JPH07197254A (ja) | 1995-08-01 |
| JP2555004B2 true JP2555004B2 (ja) | 1996-11-20 |
Family
ID=18434800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5354024A Expired - Fee Related JP2555004B2 (ja) | 1991-08-02 | 1993-12-30 | スパッタリング装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2555004B2 (enExample) |
| KR (1) | KR960011245B1 (enExample) |
| TW (1) | TW272237B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3403550B2 (ja) | 1995-06-29 | 2003-05-06 | 松下電器産業株式会社 | スパッタリング装置とスパッタリング方法 |
| JP2000239841A (ja) * | 1999-02-24 | 2000-09-05 | Ulvac Japan Ltd | スパッタリング方法と装置 |
| WO2006082863A1 (ja) * | 2005-02-02 | 2006-08-10 | Hitachi Metals, Ltd. | マグネトロンスパッタリング用磁気回路装置及びその製造方法 |
| JP2007051337A (ja) * | 2005-08-18 | 2007-03-01 | Ulvac Japan Ltd | スパッタ電極及びスパッタ電極を備えたスパッタリング装置 |
| WO2009069672A1 (ja) * | 2007-11-28 | 2009-06-04 | Ulvac, Inc. | スパッタ装置及び成膜方法 |
| TWI486469B (zh) * | 2010-04-22 | 2015-06-01 | Hon Hai Prec Ind Co Ltd | 鍍膜系統 |
| WO2011146673A2 (en) * | 2010-05-19 | 2011-11-24 | General Plasma, Inc. | High target utilization moving magnet planar magnetron scanning method |
| JP7390922B2 (ja) * | 2020-02-18 | 2023-12-04 | 東京エレクトロン株式会社 | カソードユニットおよび成膜装置 |
-
1993
- 1993-12-30 JP JP5354024A patent/JP2555004B2/ja not_active Expired - Fee Related
-
1994
- 1994-04-19 TW TW083103451A patent/TW272237B/zh active
- 1994-05-02 KR KR1019940009608A patent/KR960011245B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07197254A (ja) | 1995-08-01 |
| KR960011245B1 (ko) | 1996-08-21 |
| TW272237B (enExample) | 1996-03-11 |
| KR950018638A (ko) | 1995-07-22 |
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