JP2548948Y2 - 静電走査型イオン注入装置 - Google Patents
静電走査型イオン注入装置Info
- Publication number
- JP2548948Y2 JP2548948Y2 JP1990053451U JP5345190U JP2548948Y2 JP 2548948 Y2 JP2548948 Y2 JP 2548948Y2 JP 1990053451 U JP1990053451 U JP 1990053451U JP 5345190 U JP5345190 U JP 5345190U JP 2548948 Y2 JP2548948 Y2 JP 2548948Y2
- Authority
- JP
- Japan
- Prior art keywords
- scanning signal
- frequency
- amplitude
- triangular wave
- direction scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005468 ion implantation Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 12
- 238000010884 ion-beam technique Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990053451U JP2548948Y2 (ja) | 1990-05-22 | 1990-05-22 | 静電走査型イオン注入装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990053451U JP2548948Y2 (ja) | 1990-05-22 | 1990-05-22 | 静電走査型イオン注入装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0412251U JPH0412251U (enrdf_load_stackoverflow) | 1992-01-31 |
JP2548948Y2 true JP2548948Y2 (ja) | 1997-09-24 |
Family
ID=31574646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1990053451U Expired - Lifetime JP2548948Y2 (ja) | 1990-05-22 | 1990-05-22 | 静電走査型イオン注入装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2548948Y2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8735855B2 (en) | 2010-06-07 | 2014-05-27 | Sen Corporation | Ion beam irradiation system and ion beam irradiation method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5494275A (en) * | 1978-01-10 | 1979-07-25 | Toshiba Corp | Implanting method of charge particles to semiconductor wafers and apparatus for the same |
-
1990
- 1990-05-22 JP JP1990053451U patent/JP2548948Y2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8735855B2 (en) | 2010-06-07 | 2014-05-27 | Sen Corporation | Ion beam irradiation system and ion beam irradiation method |
Also Published As
Publication number | Publication date |
---|---|
JPH0412251U (enrdf_load_stackoverflow) | 1992-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4698509A (en) | High speed pattern generator for electron beam lithography | |
US7498590B2 (en) | Scan pattern for an ion implanter | |
JPS58190023A (ja) | 荷電粒子ビーム走査方法および装置 | |
KR20030035946A (ko) | 이온주입방법 및 그 장치 | |
CA1279732C (en) | Electron beam direct drawing device | |
Brewer | The application of electron/ion beam technology to microelectronics | |
US4942342A (en) | Parallel sweeping system for electrostatic sweeping ion implanter | |
JP2548948Y2 (ja) | 静電走査型イオン注入装置 | |
JPS637631A (ja) | 電子ビ−ム描画方法 | |
US4983850A (en) | Ion implantation device | |
EP0009049B1 (en) | Apparatus and method for fabricating microminiature devices | |
EP0673054B1 (en) | Ion implanter and method for implanting an ion beam | |
JPH0237657A (ja) | 半導体基板へのイオン注入装置 | |
JPS622116A (ja) | 形状測定方法 | |
US6483117B1 (en) | Symmetric blanking for high stability in electron beam exposure systems | |
JPS6329786B2 (enrdf_load_stackoverflow) | ||
EP0237165A2 (en) | Treating work pieces with electro-magnetically scanned ion beams | |
JPS6212624B2 (enrdf_load_stackoverflow) | ||
JPH03259514A (ja) | イオン注入方法 | |
JP2861030B2 (ja) | イオン注入装置 | |
JPH0498748A (ja) | イオン注入装置 | |
JP3175112B2 (ja) | 荷電粒子線露光方法 | |
JPH0620283Y2 (ja) | 電子線照射装置 | |
JPS61256627A (ja) | 荷電粒子露光装置 | |
JPS63128540A (ja) | イオン注入装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |