JP2546342Y2 - Hybrid integrated circuit - Google Patents

Hybrid integrated circuit

Info

Publication number
JP2546342Y2
JP2546342Y2 JP1991056900U JP5690091U JP2546342Y2 JP 2546342 Y2 JP2546342 Y2 JP 2546342Y2 JP 1991056900 U JP1991056900 U JP 1991056900U JP 5690091 U JP5690091 U JP 5690091U JP 2546342 Y2 JP2546342 Y2 JP 2546342Y2
Authority
JP
Japan
Prior art keywords
heat sink
integrated circuit
hybrid integrated
copper
fixing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1991056900U
Other languages
Japanese (ja)
Other versions
JPH0511450U (en
Inventor
伸一 豊岡
紀泰 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP1991056900U priority Critical patent/JP2546342Y2/en
Publication of JPH0511450U publication Critical patent/JPH0511450U/en
Application granted granted Critical
Publication of JP2546342Y2 publication Critical patent/JP2546342Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid
    • H01L2924/10158Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Description

【考案の詳細な説明】[Detailed description of the invention]

【0001】[0001]

【産業上の利用分野】本考案は混成集積回路に関し、特
に固着パッドに超音波振動を加えて固着されるヒートシ
ンク構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit, and more particularly to a heat sink structure which is fixed by applying ultrasonic vibration to a fixing pad.

【0002】[0002]

【従来の技術】従来の混成集積回路は図3に示す如く、
表面を絶縁処理したアルミニウム板の如き良熱伝導性混
成集積回路基板(21)上に銅箔をエッチングして形成
した所望の導電路(22)を有し、この導電路(22)
の一部に固着パッド(23)も同時に形成する。固着パ
ッド(23)はこれに固着するヒートシンク(24)と
略同一形状に形成され、固着パッド(23)には銅片等
より成るヒートシンク(24)を半田付けし、更にヒー
トシンク(24)にはパワー半導体素子(25)を固着
している。
2. Description of the Related Art A conventional hybrid integrated circuit is shown in FIG.
A desired conductive path (22) formed by etching a copper foil on a high heat conductive hybrid integrated circuit board (21) such as an aluminum plate whose surface is insulated, and the conductive path (22)
A bonding pad (23) is also formed on a part of the substrate. The fixing pad (23) is formed in substantially the same shape as the heat sink (24) to be fixed to the fixing pad (23). A heat sink (24) made of a copper piece or the like is soldered to the fixing pad (23). The power semiconductor element (25) is fixed.

【0003】斯上した構造に於いて固着パッド(23)
に隣接して他の導電路(22)が配置されていると、固
着パッド(23)にヒートシンク(24)を超音波振動
を加えて半田付けする際にはみ出した半田が基板(2
1)表面の樹脂層上で球状となり隣接する他の導電路
(22)と短絡するおそれがあった。かかる問題を解決
するために種々の提案がなされている。先ず、第1に、
図3に示す如く、固着パッド(23)の少なくとも一側
辺に拡張部(26)を設け、超音波振動印加時に生ずる
余剰半田を拡張部(26)で吸収する。第2に、図4に
示す如く、ヒートシンク(30)の側面に溝(31)を
設け、超音波振動印加時に生ずる余剰半田を溝(31)
を通じてせり上げて吸収する。というような提案が既に
為されている。
In such a structure, the fixing pad (23)
If another conductive path (22) is arranged adjacent to the substrate (2), when the heat sink (24) is soldered to the fixing pad (23) by applying ultrasonic vibration, the protruding solder is applied to the substrate (2).
1) There is a possibility that the conductive path (22) becomes spherical on the resin layer on the surface and is short-circuited with another adjacent conductive path (22). Various proposals have been made to solve such a problem. First, first,
As shown in FIG. 3, an extension portion (26) is provided on at least one side of the fixing pad (23), and excess solder generated when ultrasonic vibration is applied is absorbed by the extension portion (26). Second, as shown in FIG. 4, a groove (31) is provided on the side surface of the heat sink (30), and excess solder generated when ultrasonic vibration is applied is used to remove the groove (31).
Raise and absorb through. Such proposals have already been made.

【0004】[0004]

【考案が解決しようとする課題】上述した提案は、超音
波振動による余剰半田による問題点を防止することがで
きるものの新たな問題が発生する。即ち、図3に示す如
き、固着パッド(23)に拡張部(26)を設ける構造
においては、固着パッド(23)に必らず余剰半田を確
実に吸収することができる比較的大きめの拡張部(2
6)を形成しなければならず実装面積が低下し混成集積
回路の小型化の防げとなる。
Although the above-mentioned proposal can prevent the problem caused by excessive solder due to ultrasonic vibration, it causes a new problem. That is, as shown in FIG. 3, in the structure in which the extension portion (26) is provided on the fixing pad (23), a relatively large extension portion that can surely absorb the excess solder without fail to the fixing pad (23). (2
6) must be formed, the mounting area is reduced, and miniaturization of the hybrid integrated circuit is prevented.

【0005】また、図4に示す如き構造では、ヒートシ
ンク(30)の溝(31)でせり上り現像で半田を吸収
させなければならず、ヒートシンク(30)の肉厚をあ
る程度厚く形成しないとせり上り半田がヒートシンク上
に固着された半導体チップまでせり上り不良となる恐れ
がある。さらに図4に示す構造ではヒートシンク(3
0)に側面に溝を形成しなければならず、かかる溝を形
成するためヒートシンク(30)の材質は銅材に限定さ
れ、銅、インバー、銅のクラッド材からなるヒートシン
クを使用できないという問題がある。その理由はインバ
ー材が硬質材であるためにプレス等の手段によって溝を
形成することが困難であるからである。
Further, in the structure shown in FIG. 4, the solder must be absorbed in the groove (31) of the heat sink (30) by rising and developing, so that the thickness of the heat sink (30) must be increased to some extent. There is a possibility that the upward solder may cause a climbing failure even to the semiconductor chip fixed on the heat sink. Further, in the structure shown in FIG.
0) A groove must be formed on the side surface, and the material of the heat sink (30) is limited to a copper material for forming such a groove. Therefore, there is a problem that a heat sink made of copper, invar, or a copper clad material cannot be used. is there. The reason is that since the Invar material is a hard material, it is difficult to form grooves by means such as pressing.

【0006】[0006]

【課題を解決するための手段】本考案は上述した課題に
鑑みて為されたものであり、固着パッド上に固着される
ヒートシンクの底面を超音波振動印加時に生ずる余剰半
田を吸収できる粗面構造としたことを特徴とする。ま
た、本考案の混成集積回路のヒートシンクは銅、インバ
ー、銅のクラッド材あるいは銅材により構成したことを
特徴とする。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has a rough surface structure capable of absorbing excess solder generated when ultrasonic vibration is applied to a bottom surface of a heat sink fixed on a fixing pad. It is characterized by having. Further, the heat sink of the hybrid integrated circuit of the present invention is characterized in that it is made of copper, invar, copper clad material or copper material.

【0007】[0007]

【作用】以上に述べたような本考案の混成集積回路であ
っては、ヒートシンクを固着パッドに半田付けする際に
超音波振動による余剰半田をヒートシンクの底面に形成
された粗面部で吸収することができる。その結果、余剰
半田のはみ出しが発生せず隣接する導電路と短絡するこ
とを防止することができる。
In the hybrid integrated circuit of the present invention as described above, when the heat sink is soldered to the fixing pad, excess solder due to ultrasonic vibration is absorbed by the rough surface formed on the bottom surface of the heat sink. Can be. As a result, it is possible to prevent the excess solder from protruding and to prevent a short circuit with the adjacent conductive path.

【0008】また、本考案の混成集積回路では固着パッ
ドの大きさをヒートシンクと略同一として余剰半田を吸
収できるため小型化に寄与することができる。
Further, in the hybrid integrated circuit of the present invention, the size of the fixing pad is made substantially the same as that of the heat sink, so that excess solder can be absorbed, thereby contributing to miniaturization.

【0009】[0009]

【実施例】以下に図1及び図2に示した実施例に基づい
て本考案を説明する。混成集積回路基板(1)としては
熱抵抗の低い表面をアルマイト処理したアルミニウム板
あるいは表面に絶縁被覆を貼ったアルミニウム板を用い
る。導電路(2)は基板(1)の全面に銅箔を貼った
後、所望の形状にエッチングして形成される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the embodiments shown in FIGS. As the hybrid integrated circuit board (1), an aluminum plate having a surface having a low thermal resistance and having an alumite treatment or an aluminum plate having an insulating coating applied to the surface is used. The conductive path (2) is formed by attaching a copper foil to the entire surface of the substrate (1) and then etching it into a desired shape.

【0010】固着パッド(3)はヒートシンク(10)
を固着するためのもので、それと略同一に形状され、上
述した導電路(2)の形成時に同時に形成される。ヒー
トシンク(10)は銅片あるいは銅(4)、インバー
(5)、銅(4)のクラッド材からなる合金片が一般的
に用いられる。本実施例では熱膨張係数αを調整するこ
とができる銅(4)、インバー(5)、銅(4)のクラ
ッド材のヒートシンク(10)を用いるものとする。ヒ
ートシンク(10)は、例えば銅(4)、インバー
(5)、銅(4)の夫々の板を1対1対1の割合で圧力
10〜30ton/cmのローラでクラッドし圧延工程
で所定の厚になるまで伸しプレスで所定の大きさに打抜
き半導体素子(6)を固着できるように銀又はニッケル
等のメッキが行われており、本実施例では銀メッキが施
されている。
The fixing pad (3) is a heat sink (10).
And is formed in substantially the same shape as the above, and is formed simultaneously with the formation of the above-described conductive path (2). As the heat sink (10), a copper piece or an alloy piece made of a clad material of copper (4), invar (5) or copper (4) is generally used. In this embodiment, a heat sink (10) made of a clad material of copper (4), invar (5), and copper (4) capable of adjusting the thermal expansion coefficient α is used. The heat sink (10) clad each plate of, for example, copper (4), invar (5), and copper (4) at a ratio of 1: 1 to 1 with a roller having a pressure of 10 to 30 ton / cm, and predetermined in a rolling process. It is plated with silver or nickel or the like so that the semiconductor element (6) can be punched into a predetermined size by a stretching press until the thickness becomes large, and silver plating is applied in this embodiment.

【0011】インバー(5)はニッケル36%、鉄64
%の硬質合金である。又、インバー(5)の熱膨張率は
1.5×10-6/℃と、比較的いため銅(4)との割合
を調整することでヒートシンク(10)の膨張率を設定
することができる。本考案の特徴とするところは、上述
したヒートシンク(10)の底面、即ち、一方の銅
(4)面を粗面構造(4A)とするところにある。粗面
形状としては凹凸形状、山ぎり形状あるいはピラミッド
形状となるようにその粗面部を加工し余剰半田を吸収で
きる空間を形成することができる形状であればどのよう
な形状でもよい。本実施例ではピラミッド形状としてい
る。粗面部の高さは約0.2〜0.5mm位あれば十分
に余剰半田を吸収することができる空間を形成すること
が可能である。この粗面部はエッチングあるいはサンド
ブラストあるいはロ−レット加工等の研摩手段によって
容易に形成することができる。
Invar (5) is made of 36% nickel and 64 iron
% Hard alloy. The thermal expansion coefficient of the invar (5) is 1.5 × 10 −6 / ° C., which is relatively high, so that the expansion coefficient of the heat sink (10) can be set by adjusting the ratio of copper (4). . The feature of the present invention resides in that the bottom surface of the above-described heat sink (10), that is, one copper (4) surface has a rough surface structure (4A). As the rough surface shape, any shape may be used as long as the rough surface portion is processed so as to have an uneven shape, a ridge shape or a pyramid shape, and a space capable of absorbing excess solder can be formed. In this embodiment, the shape is a pyramid. If the height of the rough surface portion is about 0.2 to 0.5 mm, it is possible to form a space capable of sufficiently absorbing excess solder. This rough surface portion can be easily formed by a polishing means such as etching, sandblasting or knurling.

【0012】パワー半導体素子(6)としてはパワート
ランジスタ等の発熱を伴う素子であり、ヒートシンク
(10)の粗面部(4A)と反対面の銅(4)上に固着
されている。この様な本考案の構造に依れば、固着パッ
ド(3)上にヒートシンク(10)を超音波振動を加え
て固着する場合に生ずる余剰半田はヒートシンク(1
0)の底面部に設けた粗面部(4A)で適宜に吸収され
固着パッド(3)からはみ出す恐れがなくヒートシンク
(10)と固着パッド(3)との間に両者を固着する余
剰半田を吸収した半田層(7)が形成される。また、本
考案の構造ではヒートシンク(10)の底面部で余剰半
田を吸収することが可能であるために、硬質材を有する
銅(4)、インバー(5)、銅(4)のクラッド材から
なる肉厚の比較的薄いヒートシンク(10)に適合して
いる。
The power semiconductor element (6) is an element that generates heat, such as a power transistor, and is fixed on the copper (4) opposite to the rough surface (4A) of the heat sink (10). According to the structure of the present invention, the excess solder generated when the heat sink (10) is fixed on the fixing pad (3) by applying ultrasonic vibration is removed from the heat sink (1).
The excess solder for fixing the two components between the heat sink (10) and the fixing pad (3) without absorbing any risk of being appropriately absorbed by the rough surface portion (4A) provided on the bottom surface portion of (0) and protruding from the fixing pad (3) and absorbing the two. The formed solder layer (7) is formed. Further, in the structure of the present invention, since it is possible to absorb excess solder at the bottom portion of the heat sink (10), the copper (4) having a hard material, the invar (5), and the copper (4) clad material are used. Compatible with relatively thin heat sinks (10).

【0013】[0013]

【考案の効果】以上に詳述した如く、本考案に依れば、
ヒートシンク(10)の底面部を粗面構造(4A)とす
ることにより、超音波振動印加に生ずる余剰半田を確実
に粗面空間で吸収することができるので固着パッド
(3)から余剰半田のはみ出しを防止することができ
る。また、その結果、ヒートシンク(10)に加える固
着時の超音波エネルギーが少々異なっても工程の自動化
に寄与できる。
[Effect of the Invention] As described in detail above, according to the present invention,
By making the bottom surface of the heat sink (10) have a rough surface structure (4A), surplus solder generated by the application of ultrasonic vibration can be reliably absorbed in the rough surface space, so that the surplus solder protrudes from the fixing pad (3). Can be prevented. As a result, even if the ultrasonic energy applied to the heat sink (10) during fixing is slightly different, it can contribute to the automation of the process.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は本考案を説明する斜視図である。FIG. 1 is a perspective view illustrating the present invention.

【図2】図2は図1のA−A断面図である。FIG. 2 is a sectional view taken along line AA of FIG.

【図3】図3は従来例を示す上面図である。FIG. 3 is a top view showing a conventional example.

【図4】図4は従来例を示す斜視図である。FIG. 4 is a perspective view showing a conventional example.

【符号の説明】[Explanation of symbols]

(1) 混成集積回路基板 (2) 導電路 (3) 固着パッド (10) ヒートシンク (4A) 粗面部 (7) 半田層 (1) hybrid integrated circuit board (2) conductive path (3) fixing pad (10) heat sink (4A) rough surface (7) solder layer

Claims (1)

(57)【実用新案登録請求の範囲】(57) [Scope of request for utility model registration] 【請求項1】 混成集積回路基板上に設けたヒートシン
クと略同一形状の固着パッドと前記固着パッドに超音
波振動を加えて半田付けしたヒートシンクと前記ヒー
トシンク上に固着した半導体素子とを具備し、 前記ヒートシンクの底面を超音波振動印加時に生ずる
記固着パッドからの半田のはみ出しを防止する粗面構造
としたことを特徴とする混成集積回路。
A heat sink provided on a hybrid integrated circuit substrate.
Comprising click and a fixed pad having substantially the same shape, and the fixing heat sinks soldered applying ultrasonic vibration to the pad, and a semiconductor element bonded onto the heat sink, resulting in a bottom surface of the heat sink during ultrasonic vibration applying Before
A hybrid integrated circuit having a rough surface structure for preventing solder from protruding from said fixing pad .
JP1991056900U 1991-07-22 1991-07-22 Hybrid integrated circuit Expired - Fee Related JP2546342Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1991056900U JP2546342Y2 (en) 1991-07-22 1991-07-22 Hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1991056900U JP2546342Y2 (en) 1991-07-22 1991-07-22 Hybrid integrated circuit

Publications (2)

Publication Number Publication Date
JPH0511450U JPH0511450U (en) 1993-02-12
JP2546342Y2 true JP2546342Y2 (en) 1997-08-27

Family

ID=13040332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1991056900U Expired - Fee Related JP2546342Y2 (en) 1991-07-22 1991-07-22 Hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JP2546342Y2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4526813B2 (en) * 2003-12-16 2010-08-18 株式会社フジクラ Manufacturing method of joined body
JP4526814B2 (en) * 2003-12-18 2010-08-18 株式会社フジクラ Manufacturing method of joined body

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835947A (en) * 1981-08-28 1983-03-02 Sumitomo Light Metal Ind Ltd Manufacture of heat sink unit
JPS61240665A (en) * 1985-04-17 1986-10-25 Sanyo Electric Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH0511450U (en) 1993-02-12

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