JP2544761Y2 - Heat sink for semiconductor laser - Google Patents
Heat sink for semiconductor laserInfo
- Publication number
- JP2544761Y2 JP2544761Y2 JP1990089383U JP8938390U JP2544761Y2 JP 2544761 Y2 JP2544761 Y2 JP 2544761Y2 JP 1990089383 U JP1990089383 U JP 1990089383U JP 8938390 U JP8938390 U JP 8938390U JP 2544761 Y2 JP2544761 Y2 JP 2544761Y2
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- film
- solder
- semiconductor laser
- platinum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
Description
【考案の詳細な説明】 ［産業上の利用分野］ この考案は、半導体レーザをヒートシンクに接着する
場合に、ワイヤボンド領域が変形することなく、かつハ
ンダの組成が変化することもない半導体レーザ用ヒート
シンクについてのものである。[Detailed description of the invention] [Industrial application field] This invention is for a semiconductor laser in which a wire bond region is not deformed and a solder composition does not change when a semiconductor laser is bonded to a heat sink. It is about a heat sink.
［従来の技術］ 次に、従来技術による半導体レーザ用ヒートシンクの
構成を第２図により説明する。[Prior Art] Next, a configuration of a heat sink for a semiconductor laser according to a conventional technique will be described with reference to FIG.
第２図の１はヒートシンク、2Aと2Bはチタン膜、3Aと
3Bは白金膜、4Bはハンダ、5Bと６は金膜である。In FIG. 2, 1 is a heat sink, 2A and 2B are titanium films, 3A and
3B is a platinum film, 4B is a solder, and 5B and 6 are gold films.
ヒートシンク１は熱伝導率の高いダイヤモンドやシリ
コン等で形成される。チタン膜2Aはヒートシンク１の上
面に取り付けられ、チタン膜2Bはヒートシンク１の下面
に取り付けられる。The heat sink 1 is formed of diamond or silicon having a high thermal conductivity. The titanium film 2A is attached to the upper surface of the heat sink 1, and the titanium film 2B is attached to the lower surface of the heat sink 1.
白金膜3Aはチタン膜2Aに取り付けられ、白金膜3Bはチ
タン膜2Bに取り付けられる。The platinum film 3A is attached to the titanium film 2A, and the platinum film 3B is attached to the titanium film 2B.
ハンダ4Bは白金膜3Aに半導体レーザを接着するための
ものであって、金−スズ等のハンダである。金膜5Bはワ
イヤをボンドするためのものである。The solder 4B is for bonding a semiconductor laser to the platinum film 3A, and is a solder such as gold-tin. The gold film 5B is for bonding wires.
ワイヤボンドは金属結合を利用しているので、ワイヤ
ボンド用のワイヤとワイヤボンド用の面が同じ金属であ
る必要がある。Since wire bonding utilizes metal bonding, the wire for wire bonding and the surface for wire bonding need to be the same metal.
チタン膜2A・2Bと白金膜3A・3Bは、特公昭62−38874
号に記載されているとおり、ハンダ4Bと金膜5Bと金膜６
のヒートシンク１に対する付着強度を強くするために用
いられる。The titanium films 2A and 2B and the platinum films 3A and 3B are
No. 4, the solder 4B, the gold film 5B and the gold film 6
Is used to increase the adhesive strength of the heat sink 1 to the heat sink 1.
第２図のヒートシンクを用いた半導体レーザ装置の構
成を第３図により説明する。The configuration of a semiconductor laser device using the heat sink of FIG. 2 will be described with reference to FIG.
第３図の７は半導レーザ、8Aと8Bはワイヤ、10は第２
図全体のヒートシンク、11はケース、12は電極端子であ
る。In FIG. 3, 7 is a semiconductor laser, 8A and 8B are wires, and 10 is a second laser.
In the figure, a heat sink, 11 is a case, and 12 is an electrode terminal.
第３図は、次の（ア）〜（オ）の順序で形成される。 FIG. 3 is formed in the following order (A) to (E).
（ア）ヒートシンク10をハンダ4Bの溶融温度まで上げ、
半導体レーザ７をハンダ4Bの適当な場所に固定する。(A) Raise the heat sink 10 to the melting temperature of the solder 4B,
The semiconductor laser 7 is fixed to an appropriate place of the solder 4B.
（イ）ヒートシンク10の温度を下げ、半導体レーザ７を
ヒートシンク10にハンダ4Bにより接着させる。(A) The temperature of the heat sink 10 is lowered, and the semiconductor laser 7 is bonded to the heat sink 10 by solder 4B.
（ウ）ハンダ4Bより融点の低いハンダにより、ヒートシ
ンク10の金膜６とケース11を接着させる。(C) The gold film 6 of the heat sink 10 and the case 11 are adhered by solder having a lower melting point than the solder 4B.
（エ）ヒートシンク10の金膜5Bから電極端子12にワイヤ
8Bで配線する。(D) Wire from the gold film 5B of the heat sink 10 to the electrode terminal 12
Wire with 8B.
（オ）半導体レーザ７の上面からケース11にワイヤ8Aで
配線する。(E) Wire the upper surface of the semiconductor laser 7 to the case 11 with the wire 8A.
［考案が解決しようとする課題］ 第２図のハンダ4Bの温度を溶融温度まで上げ、半導体
レーザ７を接着する工程で、ハンダ4Bと金膜5Bが隣接し
ているため、溶融したハンダ4Bが金膜5Bとの隣接部から
金膜5Bを侵食し、金膜5Bにより確保されていたワイヤボ
ンド領域が狭くなる。また、溶融したハンダ4Bが金膜5B
を侵食するとき、ハンダ4Bの中に金膜5Bの一部を取り込
むため、ハンダ4Bと金膜5Bとの隣接部でハンダ4Bの組成
が変化した領域ができる。[Problem to be Solved by the Invention] In the step of raising the temperature of the solder 4B of FIG. 2 to the melting temperature and bonding the semiconductor laser 7, the solder 4B and the gold film 5B are adjacent to each other. The gold film 5B is eroded from a portion adjacent to the gold film 5B, and the wire bond region secured by the gold film 5B is narrowed. Also, the molten solder 4B is
When eroding, a part of the gold film 5B is taken into the solder 4B, so that a region where the composition of the solder 4B has changed is formed in the vicinity of the solder 4B and the gold film 5B.
この考案は、半導体レーザを接着するハンダ領域とワ
イヤボンドをする金領域の間に白金露出領域を設け、半
導体レーザをヒートシンクに接着するときにワイヤボン
ド領域が変形することなく、かつハンダの組成が変化す
ることもない半導体レーザ用ヒートシンクの提供を目的
とする。In this invention, a platinum exposed region is provided between a solder region for bonding a semiconductor laser and a gold region for wire bonding, and the wire bonding region is not deformed when the semiconductor laser is bonded to a heat sink, and the composition of the solder is reduced. An object of the present invention is to provide a semiconductor laser heat sink that does not change.
［課題を解決するための手段］ この目的を達成するため、この考案では、熱伝導率の
高いヒートシンク１と、ヒートシンク１の上面に取り付
けられるチタン膜2Aと、ヒートシンク１の下面に取り付
けられるチタン膜2Bと、チタン膜2Aに取り付けられる白
金膜3Aと、チタン膜2Bに取り付けられる白金膜3Bと、白
金膜3Aに取り付けられるハンダ4Aと、白金膜3Aに取り付
けられる金膜5Aと、白金膜3Bに取り付けられる金膜６と
を備え、ハンダ4Aと金膜5Aとの間に白金露出領域3Cを設
ける。[Means for Solving the Problems] In order to achieve this object, in the present invention, a heat sink 1 having a high thermal conductivity, a titanium film 2A attached to the upper surface of the heat sink 1, and a titanium film attached to the lower surface of the heat sink 1 2B, a platinum film 3A attached to the titanium film 2A, a platinum film 3B attached to the titanium film 2B, a solder 4A attached to the platinum film 3A, a gold film 5A attached to the platinum film 3A, and a platinum film 3B. A gold film 6 to be attached is provided, and a platinum exposed region 3C is provided between the solder 4A and the gold film 5A.
次に、この考案による半導体レーザ用ヒートシンクの
構成を第１図により説明する。Next, the structure of the heat sink for a semiconductor laser according to the present invention will be described with reference to FIG.
第１図の4Aはハンダ、5Aは金膜であり、その他は第２
図と同じものである。4A is a solder, 5A is a gold film and FIG.
It is the same as the figure.
ハンダ4Aは第２図のハンダ4Bと材質は同じであるが、
ハンダ4Aはハンダ4Bよりも幅が狭くなっている。金膜5A
は第２図の金膜5Bと材質は同じであるが、金膜5Aは金膜
5Bよりも幅が狭くなっており、ハンダ4Aと金膜5Aの間に
白金露出領域3Cが形成されるようになっている。The material of the solder 4A is the same as that of the solder 4B of FIG.
Solder 4A is narrower than solder 4B. Gold film 5A
Is the same material as the gold film 5B in FIG. 2, but the gold film 5A is a gold film.
The width is smaller than 5B, and a platinum exposed region 3C is formed between the solder 4A and the gold film 5A.
［作用］ 第１図のヒートシンク１に第３図のように半導体レー
ザ７を接着する場合、第１図のヒートシンク１に熱を加
え、ハンダ4Aの融点まで温度を上げ、ハンダ4Aを溶融さ
せる工程で、溶融したハンダ4Aは白金露出領域3Cがある
ので、金膜5Aに達することはなく、金膜5Aが変形するこ
となく、かつハンダ4Aの組成が変化することもない。[Operation] In bonding the semiconductor laser 7 to the heat sink 1 of FIG. 1 as shown in FIG. 3, a step of applying heat to the heat sink 1 of FIG. 1, raising the temperature to the melting point of the solder 4A, and melting the solder 4A. Since the molten solder 4A has the platinum exposed region 3C, it does not reach the gold film 5A, the gold film 5A is not deformed, and the composition of the solder 4A does not change.
［考案の効果］ この考案によれば、半導体レーザを接着するハンダ領
域と、ワイヤボンドをする金膜領域の間に白金露出領域
を設けているので、半導体レーザをヒートシンクに接着
するとき、ワイヤボンド領域が変形することなく、かつ
ハンダの組成が変化することもない。According to the invention, the platinum exposed region is provided between the solder region for bonding the semiconductor laser and the gold film region for wire bonding. Therefore, when the semiconductor laser is bonded to the heat sink, the wire bonding is performed. The region is not deformed and the composition of the solder does not change.
第１図はこの考案による半導体レーザ用ヒートシンクの
構成図、第２図は従来技術による半導体レーザ用ヒート
シンクの構成図、第３図は第２図のヒートシンクを用い
た半導体レーザ装置の構成図である。 １……ヒートシンク、2A・2B……チタン膜、3A・3B……
白金膜、3C……白金露出領域、4A・4B……ハンダ、5A・
5B……金膜、６……金膜。FIG. 1 is a structural view of a semiconductor laser heat sink according to the present invention, FIG. 2 is a structural view of a conventional semiconductor laser heat sink, and FIG. 3 is a structural view of a semiconductor laser device using the heat sink of FIG. . 1 ... heat sink, 2A / 2B ... titanium film, 3A / 3B ...
Platinum film, 3C …… Platinum exposed area, 4A ・ 4B …… Solder, 5A ・
5B: gold film, 6: gold film.
Claims (1)
ン膜（2A）と、 ヒートシンク（１）の下面に取り付けられる第２のチタ
ン膜（2B）と、 第１のチタン膜（2A）に取り付けられる第１の白金膜
（3A）と、 第２のチタン膜（2B）に取り付けられる第２の白金膜
（3B）と、 第１の白金膜（3A）に取り付けられるハンダ（4A）と、 第１の白金膜（3A）に取り付けられる第１の金膜（5A）
と、 第２の白金膜（3B）に取り付けられる第２の金膜（６）
とを備え、 ハンダ（4A）と第１の金膜（5A）との間に白金露出領域
（3C）を設けることを特徴とする半導体レーザ用ヒート
シンク。A heat sink having a high thermal conductivity, a first titanium film attached to an upper surface of the heat sink, and a second titanium film attached to a lower surface of the heat sink. 2B), a first platinum film (3A) attached to the first titanium film (2A), a second platinum film (3B) attached to the second titanium film (2B), and a first platinum film. Solder (4A) attached to the membrane (3A), and first gold membrane (5A) attached to the first platinum membrane (3A)
And a second gold film (6) attached to the second platinum film (3B).
And a heat sink for a semiconductor laser, wherein a platinum exposed region (3C) is provided between the solder (4A) and the first gold film (5A).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990089383U JP2544761Y2 (en) | 1990-08-27 | 1990-08-27 | Heat sink for semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990089383U JP2544761Y2 (en) | 1990-08-27 | 1990-08-27 | Heat sink for semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0446568U JPH0446568U (en) | 1992-04-21 |
| JP2544761Y2 true JP2544761Y2 (en) | 1997-08-20 |
Family
ID=31823319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990089383U Expired - Lifetime JP2544761Y2 (en) | 1990-08-27 | 1990-08-27 | Heat sink for semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2544761Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006313897A (en) * | 2005-05-07 | 2006-11-16 | Samsung Electronics Co Ltd | Submount for light emitting package |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137389A (en) * | 1988-11-18 | 1990-05-25 | Nec Corp | Submount and optical semiconductor device |
-
1990
- 1990-08-27 JP JP1990089383U patent/JP2544761Y2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006313897A (en) * | 2005-05-07 | 2006-11-16 | Samsung Electronics Co Ltd | Submount for light emitting package |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0446568U (en) | 1992-04-21 |
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