JP2543534B2 - Conductor paste composition for aluminum nitride substrate - Google Patents
Conductor paste composition for aluminum nitride substrateInfo
- Publication number
- JP2543534B2 JP2543534B2 JP62230925A JP23092587A JP2543534B2 JP 2543534 B2 JP2543534 B2 JP 2543534B2 JP 62230925 A JP62230925 A JP 62230925A JP 23092587 A JP23092587 A JP 23092587A JP 2543534 B2 JP2543534 B2 JP 2543534B2
- Authority
- JP
- Japan
- Prior art keywords
- tib
- zrb
- paste composition
- conductor paste
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Conductive Materials (AREA)
Description
【発明の詳細な説明】 〔概要〕 窒化アルミニウム（AIN）基板用導体ペースト組成物
に関し、 従来のAlN基板用の内部導体の電気抵抗値が高いとい
う問題点を排除し、AlN基板用内部導体の電気抵抗値を
低減することができるAlN基板用導体ペースト組成物を
提供することを目的とし、 AlN基板用導体ペースト組成物をホウ化チタン（Ti
B2）又はホウ化ジルコニウム（ZrB2）を主成分とし、こ
れに銅、銀、金、アルミニウム及びニッケルの群から選
ばれた少なくとも一種の金属成分をTiB2又はZrB2を焼成
した際に生ずる空隙率相当量又のそれ以下の量添加して
構成する。DETAILED DESCRIPTION OF THE INVENTION [Outline] With respect to a conductor paste composition for an aluminum nitride (AIN) substrate, a problem that the internal conductor for an AlN substrate has a high electric resistance value is eliminated, and an internal conductor for an AlN substrate is eliminated. The purpose of the present invention is to provide a conductor paste composition for an AlN substrate that can reduce the electrical resistance value.
B 2 ) or zirconium boride (ZrB 2 ) as a main component, and at least one metal component selected from the group of copper, silver, gold, aluminum and nickel added thereto when TiB 2 or ZrB 2 is fired It is configured by adding an amount equivalent to or less than the porosity.
本発明は、窒化アルミニウム（AlN）基板用導体ペー
スト組成物に関する。The present invention relates to a conductor paste composition for aluminum nitride (AlN) substrates.
近年のLSI技術並びに実装技術の進歩に伴い、回路か
らの発熱量の増大に対処するため、放熱性に優れたAlN
基板の使用が注目されているが、AlN基板用の導体ペー
ストは電気抵抗値などの電気的特性に劣り、この問題の
解決が要求されている。Due to the recent advances in LSI technology and packaging technology, AlN has excellent heat dissipation in order to cope with the increase in heat generation from circuits.
Although the use of a substrate is drawing attention, a conductor paste for an AlN substrate is inferior in electrical characteristics such as an electric resistance value, and a solution to this problem is required.
AlN基板は、高熱伝導性の故に注目されているが、通
常1800℃程度の高温で焼成するために電気的特性は優れ
るが、融点が低い銅、金、銀などの導体を内部配線に用
いることができない。そのため、従来はタングステンや
モリブデンなどを使用しているが、これらは電気抵抗が
大きいという欠点があった。AlN substrates are attracting attention because of their high thermal conductivity, but they usually have excellent electrical characteristics because they are fired at a high temperature of about 1800 ° C, but copper, gold, silver, or other conductors with low melting points must be used for internal wiring. I can't. Therefore, conventionally, tungsten or molybdenum has been used, but these have the drawback of high electrical resistance.
これに対し、ホウ化チタン（TiB2）又はホウ化ジルコ
ニウム（ZrB2）などの金属ホウ化物は金と同等の電気抵
抗を有するが、これらは難焼結性のため1800℃程度の温
度で焼結した場合には緻密化せず、得られる焼成体の電
気抵抗値は理論値よりかなり大きな値になるため実用的
でないという問題がある。そのため、例えばCoB、TaB2
などの焼結助剤を添加することも試みられているが、こ
れらの助剤はTiB2又はZrB2などの主成分と化学的に反応
して電気抵抗値が大きくなるのでこれも実用的ではなか
った。On the other hand, metal borides such as titanium boride (TiB 2 ) or zirconium boride (ZrB 2 ) have the same electrical resistance as gold, but these are difficult to sinter and burn at temperatures around 1800 ° C. In the case of binding, there is a problem that it is not practical because it does not become densified and the electric resistance value of the obtained fired body becomes a value considerably larger than the theoretical value. Therefore, for example, CoB, TaB 2
It has also been attempted to add a sintering aid such as, but since these aids chemically react with the main component such as TiB 2 or ZrB 2 to increase the electric resistance value, this is also not practical. There wasn't.
従って、本発明は前記した従来技術の問題点、即ち従
来のAlN基板用の内部導体の電気抵抗値が高いという問
題点を排除し、AlN基板用内部導体の電気抵抗値を低減
することのできるAlN基板用導体ペースト組成物を提供
することを目的とする。Therefore, the present invention can eliminate the above-mentioned problems of the prior art, that is, the problem that the internal conductor for the conventional AlN substrate has a high electric resistance value, and reduce the electric resistance value of the internal conductor for the AlN substrate. An object is to provide a conductor paste composition for an AlN substrate.
本発明に従えば、前記した問題点はホウ化チタン（Ti
B2）又はホウ化ジルコニウム（ZrB2）を主成分とし、こ
れに銅、銀、金、アルミニウム及びニッケルの群から選
ばれた少なくとも一種の金属成分をTiB2又はZrB2を焼成
した際に生ずる空隙率相当量又はそれ以下の量添加して
成る窒化アルミニウム基板用導体ペースト組成物によっ
て解決することができる。According to the present invention, the above-mentioned problems are caused by titanium boride (Ti
B 2 ) or zirconium boride (ZrB 2 ) as a main component, and at least one metal component selected from the group of copper, silver, gold, aluminum and nickel added thereto when TiB 2 or ZrB 2 is fired The problem can be solved by a conductor paste composition for an aluminum nitride substrate, which is formed by adding an amount equivalent to or less than the porosity.
本発明者らは、前記したTiB2又はZrB2の導体において
AlN基板の焼成後緻密化せずに、残存している空隙を他
の導電性成分で充填することにより電気抵抗値が低くな
るであろうと想定し、種種検討したところ、銅（Cu）、
銀（Ag）、金（Au）、アルミニウム（Al）又はニッケル
（Ni）などの金属の融液がTiB2又はZrB2と濡れず、かつ
電気抵抗値の低い金属をTiB2又はZrB2ペースト組成物に
添加することによって前記目的を達成することを見出し
た。添加する金属成分が主成分と反応すると電気抵抗値
が増大するため、金属成分はTiB2又はZrB2と濡れにくい
もの、即ち反応しないものでなければならない。In the conductor of TiB 2 or ZrB 2 described above, the present inventors
Assuming that the electrical resistance value will be reduced by filling the remaining voids with other conductive components without densifying the AlN substrate after firing, a variety of investigations have revealed that copper (Cu),
Melt of metal such as silver (Ag), gold (Au), aluminum (Al) or nickel (Ni) does not get wet with TiB 2 or ZrB 2 and the metal with low electric resistance is TiB 2 or ZrB 2 paste composition It has been found that the above object can be achieved by adding it to the product. Since the electrical resistance value increases when the added metal component reacts with the main component, the metal component must be one that is difficult to wet with TiB 2 or ZrB 2 , that is, one that does not react.
添加する金属成分の量が微量の場合には、AlN基板の
焼成の際、昇温中に溶融し、毛管現象により主成分粒子
間に保持され、これが降温時に再凝固し第二の導電成分
となる。一方、金属成分の添加量が多過ぎると焼成時に
流出してAlN基板と導体との密着性に悪影響を及ぼすお
それがある。従って、前記金属成分の添加量はTiB2又は
ZrB2の主成分の焼成時の空隙率（又は気孔率）以下にす
る必要がある。ここで空隙率は、TiB2又はZrB2の圧粉体
をAlN基板と同様の条件で焼成し、その密度を測定し
て、理論密度との比から求めることができる。この空隙
率は、主成分粉末の純度、粒度及び焼成条件などにより
異なるが、金属成分の添加量は一般にはTiB2又はZrB2に
対し溶融液状態で0.5〜５容積％、好ましくは1.0〜3.5
容積％である。When the amount of the metal component to be added is very small, during the firing of the AlN substrate, it melts during the temperature rise and is held between the main component particles due to the capillary phenomenon, which re-solidifies when the temperature falls and becomes the second conductive component. Become. On the other hand, if the addition amount of the metal component is too large, it may flow out during firing and adversely affect the adhesion between the AlN substrate and the conductor. Therefore, the addition amount of the metal component is TiB 2 or
It is necessary to keep the porosity (or porosity) at the time of firing of the main component of ZrB 2 below. Here, the porosity can be obtained by firing a green compact of TiB 2 or ZrB 2 under the same conditions as the AlN substrate, measuring the density, and calculating the ratio from the theoretical density. This porosity varies depending on the purity of the main component powder, the particle size, the firing conditions, etc., but the addition amount of the metal component is generally 0.5 to 5% by volume, preferably 1.0 to 3.5% by volume with respect to TiB 2 or ZrB 2.
% By volume.
なお、本発明の導体ペースト組成物には、従来のもの
と同様、ポリビニルブチラール（PVB）、ポリメタクリ
ル酸メチル（PMMA）などの有機バインダー、テルピネオ
ール、ブチルカルビトールアセートなどの溶剤、水素添
加ひまし油などのチクソトロピー付与剤などを配合する
ことができる。The conductor paste composition of the present invention includes polyvinyl butyral (PVB), an organic binder such as polymethylmethacrylate (PMMA), a solvent such as terpineol and butyl carbitol acetate, and hydrogenated castor oil, like the conventional ones. A thixotropy-imparting agent such as
実施例 以下に本発明の実施例を説明するが、本発明の技術的
範囲をこれらの実施例に限定するものでないとはいうま
でもない。Examples Examples of the present invention will be described below, but it goes without saying that the technical scope of the present invention is not limited to these examples.
実施例１ 粒径約３μｍのTiB2粉末100重量部に、粒径約0.5μｍ
のCu粉２重量部、有機バインダーとしてPVB（ポリビニ
ルブチラール２重量部及び溶剤としてテルピネオール10
重量部を添加して混練し、ペースト化した。このペース
ト組成物をAlNグリーンシート（大きさ:90mm×90mm、厚
さ:150μｍ）上に、スクリーン印刷法により印刷（パタ
ーン幅:150μｍ）し、中間層として積層した。この積層
体をN2中600℃で脱脂した後、N2中1800℃で４時間焼成
した。この焼成基板を切断して導体の断面を露出させ
て、４端子法により電気抵抗値を測定した。Example 1 100 parts by weight of TiB 2 powder having a particle size of about 3 μm was added with a particle size of about 0.5 μm.
2 parts by weight of Cu powder, PVB as an organic binder (2 parts by weight of polyvinyl butyral and terpineol 10 as a solvent)
Parts by weight were added and kneaded to form a paste. This paste composition was printed (pattern width: 150 μm) on the AlN green sheet (size: 90 mm × 90 mm, thickness: 150 μm) by the screen printing method, and laminated as an intermediate layer. The laminate was degreased in N 2 at 600 ° C. and then calcined in N 2 at 1800 ° C. for 4 hours. The fired substrate was cut to expose the cross section of the conductor, and the electrical resistance value was measured by the 4-terminal method.
一方、Cuを添加しなかった以外は上と同様にして調製
したTiB2ペーストを同様の方法で評価して電気抵抗値を
求めた。On the other hand, the TiB 2 paste prepared in the same manner as above except that Cu was not added was evaluated by the same method to obtain the electric resistance value.
結果は以下の通りであった。 The results were as follows.
Cu 添加TiB2:10mΩ／□ Cu無添加TiB2:15mΩ／□ この結果から本発明に従えば、得られる導体の電気抵
抗値が低くなることは明らかである。Cu-added TiB 2 : 10 mΩ / □ Cu-free TiB 2 : 15 mΩ / □ From these results, it is clear that according to the present invention, the electric resistance value of the obtained conductor is low.
実施例２ 実施例１と同様にして主成分としてTiB2又はZrB2を用
い、これにAg、Au、Ni、Al、Cuなどの金属成分を添加し
たペースト組成物を調製し、実施例１と同様にしてシー
ト抵抗値を求めた。結果を第１表に示す。Example 2 In the same manner as in Example 1, TiB 2 or ZrB 2 was used as the main component, and a paste composition was prepared by adding a metal component such as Ag, Au, Ni, Al or Cu to the paste composition. Similarly, the sheet resistance value was obtained. The results are shown in Table 1.
〔発明の効果〕 以上説明したように、本発明に従えば、TiB2又はZrB2
を主成分とするAlN基板用導体ペースト組成物に、Cu、A
g、Au、Al又はNiを添加することにより内部導体の電気
抵抗値を低減することができる。 As described above, according to the present invention, TiB 2 or ZrB 2
The main component of the conductor paste composition for AlN substrate is Cu, A
The electrical resistance of the inner conductor can be reduced by adding g, Au, Al or Ni.
従って、本発明はLSIパッケージなどに極めて有用で
ある。Therefore, the present invention is extremely useful for LSI packages and the like.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−187696（ＪＰ，Ａ) 特開 昭63−289702（ＪＰ，Ａ) 特開 昭60−161467（ＪＰ，Ａ) 特開 昭62−197375（ＪＰ，Ａ) 特開 昭57−206088（ＪＰ，Ａ) 特開 昭59−42702（ＪＰ，Ａ) 特公 昭49−48445（ＪＰ，Ｂ１) ─────────────────────────────────────────────────── --- Continuation of the front page (56) Reference JP-A 63-187696 (JP, A) JP-A 63-289702 (JP, A) JP-A 60-161467 (JP, A) JP-A 62- 197375 (JP, A) JP-A-57-206088 (JP, A) JP-A-59-42702 (JP, A) JP-B-49-48445 (JP, B1)
Claims (2)
ウム（ZrB2）を主成分とし、これに銅、銀、金、アルミ
ニウム及びニッケルの群から選ばれた少なくとも一種の
金属成分をTiB2又はZrB2を焼成した際に生ずる空隙率相
当量又はそれ以下の量添加して成る窒化アルミニルム基
板用導体ペースト組成物。1. A titanium boride (TiB 2) or zirconium boride and (ZrB 2) as a main component, to which copper, silver, gold, aluminum and at least one metal component selected from the group consisting of nickel TiB 2 Alternatively, a conductor paste composition for an aluminium nitride substrate, which is formed by adding ZrB 2 in an amount equivalent to or less than the porosity generated when firing.
し、溶融状態で0.5〜５容積％である特許請求の範囲第
１項記載の組成物。2. The composition according to claim 1, wherein the amount of the metal component added is 0.5 to 5% by volume in the molten state with respect to TiB 2 or ZrB 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62230925A JP2543534B2 (en) | 1987-09-17 | 1987-09-17 | Conductor paste composition for aluminum nitride substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62230925A JP2543534B2 (en) | 1987-09-17 | 1987-09-17 | Conductor paste composition for aluminum nitride substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6476605A JPS6476605A (en) | 1989-03-22 |
| JP2543534B2 true JP2543534B2 (en) | 1996-10-16 |
Family
ID=16915431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62230925A Expired - Lifetime JP2543534B2 (en) | 1987-09-17 | 1987-09-17 | Conductor paste composition for aluminum nitride substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2543534B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0671137B2 (en) * | 1989-06-15 | 1994-09-07 | 電気化学工業株式会社 | Manufacturing method of aluminum nitride substrate bonded with copper |
| JP3927250B2 (en) * | 1995-08-16 | 2007-06-06 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Thick film conductor paste composition for aluminum nitride substrate |
-
1987
- 1987-09-17 JP JP62230925A patent/JP2543534B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6476605A (en) | 1989-03-22 |
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