JP2539067B2 - Low pressure vapor phase growth equipment - Google Patents
Low pressure vapor phase growth equipmentInfo
- Publication number
- JP2539067B2 JP2539067B2 JP2038856A JP3885690A JP2539067B2 JP 2539067 B2 JP2539067 B2 JP 2539067B2 JP 2038856 A JP2038856 A JP 2038856A JP 3885690 A JP3885690 A JP 3885690A JP 2539067 B2 JP2539067 B2 JP 2539067B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- gas
- silane
- vapor phase
- exhaust system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔概要〕 原料ガスにシラン系ガスを用いた減圧気相成長装置に
関し， 成長膜の結晶性及び装置の安全性を向上した排気系を
有する減圧気相成長装置を提供することを目的とし， 基板を収容し，原料ガスとしてシラン系ガスを導入し
て該基板上に成膜する反応室（１）と，該反応室内を減
圧する排気系とからなり，該排気系は，該反応室内を排
気するポンプ（２），（３）と，該ポンプから排出され
るガス中のシラン系ガスを吸着する除害塔（４）と，該
除害塔から排出されるガスを空気で希釈して屋外に排出
する希釈ダクト（５）とを有し，該ポンプ（２），
（３）は排気媒体に液体を使用しないドライ構造のもの
であり，該除害塔（４）は担体に水素化物を酸化する酸
化剤を被覆した充填物が充填されているように構成す
る。The present invention relates to a low pressure vapor phase growth apparatus using a silane-based gas as a source gas, and provides a low pressure vapor phase growth apparatus having an exhaust system with improved crystallinity of a grown film and safety of the apparatus. In order to achieve the above, a reaction chamber (1) for accommodating a substrate and introducing a silane-based gas as a raw material gas to form a film on the substrate, and an exhaust system for depressurizing the reaction chamber are provided. Are pumps (2) and (3) for exhausting the reaction chamber, a detoxification tower (4) for adsorbing silane-based gas in the gas discharged from the pump, and a gas discharged from the detoxification tower. With a dilution duct (5) for diluting the air with air and discharging it to the outside, and the pump (2),
(3) has a dry structure in which no liquid is used as the exhaust medium, and the detoxification tower (4) is constructed such that the carrier is filled with a packing coated with an oxidant that oxidizes hydride.
本発明は原料ガスにシラン系ガスを用いた減圧気相成
長装置に関する。The present invention relates to a reduced pressure vapor phase growth apparatus using a silane-based gas as a raw material gas.
近年，半導体装置の高機能化に伴い，珪素（Si）のエ
ピタキシャル成長は結晶性の改善が要求されている。2. Description of the Related Art In recent years, as semiconductor devices have become more sophisticated, the crystallinity of epitaxial growth of silicon (Si) has been required to be improved.
この要求に対応して，本発明はCCD等の高密度，高集
積度デバイスの製造に利用できる。In response to this demand, the present invention can be used for manufacturing high density and high integration devices such as CCD.
従来の減圧気相成長装置（特に減圧エピタキシャル成
長装置）においては、成長膜の結晶性を落とす原因の一
つである金属汚染を低減するため,Siの原料ガスは塩素
等を含んだ腐食性のガスを避ける傾向にあり，そのため
にモノシラン（SiH4），ジシラン（Si2H6）等のシラン
系ガスが用いられている。In conventional low pressure vapor phase growth equipment (especially low pressure epitaxial growth equipment), the source gas of Si is a corrosive gas containing chlorine etc. in order to reduce metal contamination, which is one of the causes of reducing the crystallinity of the grown film. Therefore, silane-based gases such as monosilane (SiH 4 ) and disilane (Si 2 H 6 ) are used for this purpose.
この場合，装置の排気系には水スクラバとロータリポ
ンプと希釈ダクトが使用されるのが一般的であった。In this case, a water scrubber, a rotary pump, and a dilution duct were generally used for the exhaust system of the device.
第２図は従来例による排気系を説明する模式図であ
る。FIG. 2 is a schematic diagram illustrating an exhaust system according to a conventional example.
図において,1は反応室,6はロータリポンプ,7は水スク
ラバ,5は希釈ダクトである。In the figure, 1 is a reaction chamber, 6 is a rotary pump, 7 is a water scrubber, and 5 is a dilution duct.
反応室１内にウエハを入れ，ウエハ上にSiエピタキシ
ャル成長を行う際に反応室内を排気系により減圧してい
る。When a wafer is put in the reaction chamber 1 and Si epitaxial growth is performed on the wafer, the pressure inside the reaction chamber is reduced by an exhaust system.
排気系はロータリポンプ６と水スクラバ７と希釈ダク
ト５からなり，原料ガスを含んだ排気ガスはロータリポ
ンプ６により排気され，水スクラバ７により水に可溶な
反応生成物は水中に吸収されて希釈ダクト５に送られ，
ここで空気で希釈して屋外に排出される。The exhaust system consists of a rotary pump 6, a water scrubber 7, and a dilution duct 5. Exhaust gas containing the raw material gas is exhausted by the rotary pump 6, and the water scrubber 7 absorbs the water-soluble reaction product into the water. Sent to the dilution duct 5,
Here it is diluted with air and discharged outdoors.
ところが，水スクラバは排気系中のシランの除去に効
目がなく，又，ロータリポンプから反応室への油の帰還
や，水スクラバから反応室への水の帰還により，成長膜
の膜質を落としていた。However, the water scrubber has no effect on the removal of silane in the exhaust system, and the quality of the growth film deteriorates due to the return of oil from the rotary pump to the reaction chamber and the return of water from the water scrubber to the reaction chamber. Was there.
従来例の排気系では油，水分の汚染を防止できず，成
長膜にシャロウピットが発生するという問題が生じてい
た。The exhaust system of the conventional example cannot prevent the contamination of oil and water and causes a problem that shallow pits are generated in the grown film.
又，シランが除去しきれないので，安全上の問題もあ
った。Moreover, since silane cannot be completely removed, there is a safety problem.
本発明は原料ガスにシラン系ガスを用いた成長膜の結
晶性及び装置の安全性を向上した排気系を有する減圧気
相成長装置を提供することを目的とする。An object of the present invention is to provide a reduced pressure vapor phase growth apparatus having an exhaust system in which the crystallinity of a grown film using a silane-based gas as a source gas and the safety of the apparatus are improved.
上記課題の解決は，基板を収容し，原料ガスとしてシ
ラン系ガスを導入して該基板上に成膜する反応室（１）
と，該反応室内を減圧する排気系とからなり，該排気系
は，該反応室内を排気するポンプ（２），（３）と，該
ポンプから排出されるガス中のシラン系ガスを吸着する
除害塔（４）と，該除害塔から排出されるガスを空気で
希釈して屋外に排出する希釈ダクト（５）とを有し，該
ポンプ（２），（３）は排気媒体に液体を使用しないド
ライ構造のものであり，該除害塔（４）は担体に水素化
物を酸化する酸化剤を被覆した充填物が充填されている
ことを特徴とする減圧気相成長装置により達成される。To solve the above problems, a reaction chamber (1) for accommodating a substrate and introducing a silane-based gas as a raw material gas to form a film on the substrate
And an exhaust system for reducing the pressure in the reaction chamber, and the exhaust system adsorbs silane-based gas in the gas exhausted from the pumps (2) and (3) for exhausting the reaction chamber. It has a detoxification tower (4) and a dilution duct (5) for diluting the gas discharged from the detoxification tower with air and discharging it outdoors, and the pumps (2), (3) serve as exhaust media. A dry structure without liquid is used, and the detoxification tower (4) is achieved by a reduced pressure vapor phase growth apparatus characterized in that a carrier is filled with a packing coated with an oxidant for oxidizing a hydride. To be done.
本発明は反応室の排気にメカニカルブースタポンプや
ドライポンプ等の油を使わないポンプを用して反応室へ
の油や水の帰還をなくして成長膜の結晶性を向上し，又
除害塔の充填剤は酸化剤を付着した担体で，シランを酸
化してその表面に吸着除去するようにしたものである。The present invention uses a pump that does not use oil such as a mechanical booster pump or a dry pump for exhausting the reaction chamber to improve the crystallinity of the growth film by eliminating the return of oil or water to the reaction chamber, and to remove the harmful gas from the detoxification tower. The filler is a carrier to which an oxidant is attached, which is used to oxidize and remove silane by adsorption on its surface.
第１図は実施例による排気系を説明する模式図であ
る。FIG. 1 is a schematic diagram illustrating an exhaust system according to an embodiment.
図において,1は反応室,2はメカニカルブースタポン
プ,3はドライポンプ,4は除害塔,5は希釈ダクトである。In the figure, 1 is a reaction chamber, 2 is a mechanical booster pump, 3 is a dry pump, 4 is an abatement tower, and 5 is a dilution duct.
反応室１内にウエハを入れ，ウエハ上にSiエピタキシ
ャル成長を行う際に反応室内を排気系により減圧してい
る。When a wafer is put in the reaction chamber 1 and Si epitaxial growth is performed on the wafer, the pressure inside the reaction chamber is reduced by an exhaust system.
排気系はメカニカルブースタポンプ２とモレキュラシ
ープ等を用いたドライポンプ３と除害塔４と希釈ダクト
５とからなる。The exhaust system is composed of a mechanical booster pump 2, a dry pump 3 using a molecular sheep, a detoxification tower 4 and a dilution duct 5.
シランガスを含んだ排気ガスはメカニカルブースタポ
ンプ２とドライポンプ３により排気され，除害塔４によ
りシランは吸収除去されて希釈ダクト４に送られ，ここ
で空気で希釈して屋外に排出される。The exhaust gas containing the silane gas is exhausted by the mechanical booster pump 2 and the dry pump 3, and the detoxification tower 4 absorbs and removes the silane and is sent to the dilution duct 4, where it is diluted with air and discharged to the outside.
ここで，充填剤は以下に示すものを使用した。 Here, the following fillers were used.
担体の材質の例：アルミナ 担体の大きさの例:5mm径の球 水素化物の酸化剤の例：Fe2O3 酸化剤の被覆厚さの例:100μｍ 吸着酸化過程の科学式：SiH4＋４Fe2O3→8FeO＋SiO2↓
＋２H2O. なお，実施例では排気系を構成する各装置間の配管は
すべてステンレス鋼管で行っている。Example of carrier material: Alumina Example of carrier size: 5mm diameter sphere Example of oxidizer for hydride: Fe 2 O 3 Example of coating thickness of oxidant: 100μm Scientific formula of adsorption oxidation process: SiH 4 + 4Fe 2 O 3 → 8 FeO + SiO 2 ↓
+ 2H 2 O. In this embodiment, the piping between each device constituting the exhaust system is made of stainless steel.
次に，実施例の効果を示す数値例を従来例と対比して
例示する。Next, a numerical example showing the effect of the embodiment will be illustrated in comparison with the conventional example.
Si基板上に下記の同一条件で厚さμｍのSiエピ膜を成
長し，成長膜のシャロウピット数を測定して両者の比較
を行った。A Si epitaxial film having a thickness of μm was grown on a Si substrate under the same conditions below, and the number of shallow pits in the grown film was measured to compare the two.
成長条件 原料ガス：Si2H6 150 SCCM, 希釈ガス：H2 100 SLM, 成長温度：900℃， ガス圧力：5 Torr. 成長膜のシャロウピット数（cm-2）は次のように実施
例は従来例に比し１桁減少した。Growth conditions Source gas: Si 2 H 6 150 SCCM, Diluting gas: H 2 100 SLM, Growth temperature: 900 ℃, Gas pressure: 5 Torr. The number of shallow pits (cm -2 ) of the grown film is as follows: Is one digit less than the conventional example.
実施例:500 従来係:5000 実施例ではSiエピ膜の成長について説明したが，シラ
ン系ガスを使用する成膜，例えば二酸化珪素膜，窒化珪
素膜等の成長に本発明を適用しても発明の効果は変わら
ない。Example: 500 Conventional: 5000 In the example, the growth of the Si epitaxial film was described. However, the present invention can be applied to the film formation using a silane-based gas, for example, the growth of a silicon dioxide film or a silicon nitride film. The effect of does not change.
以上説明したように本発明によれば，原料ガスにシラ
ン系ガスを用いた成長膜の結晶性及び装置の安全性を向
上した排気系を有する減圧気相成長装置が得られた。As described above, according to the present invention, a reduced pressure vapor phase growth apparatus having an exhaust system in which the crystallinity of a grown film using a silane-based gas as a source gas and the safety of the apparatus are improved can be obtained.
第１図は実施例による排気系を説明する模式図， 第２図は従来例による排気系を説明する模式図である。 図において， １は反応室,2はメカニカルブースタポンプ,3はドライポ
ンプ,4は除害塔,5は希釈ダクトである。FIG. 1 is a schematic diagram illustrating an exhaust system according to an embodiment, and FIG. 2 is a schematic diagram illustrating an exhaust system according to a conventional example. In the figure, 1 is a reaction chamber, 2 is a mechanical booster pump, 3 is a dry pump, 4 is an abatement tower, and 5 is a dilution duct.
Claims (1)
スを導入して該基板上に成膜する反応室（１）と，該反
応室内を減圧する排気系とからなり， 該排気系は，該反応室内を排気するポンプ（２），
（３）と，該ポンプから排出されるガス中のシラン系ガ
スを吸着する除害塔（４）と，該除害塔から排出される
ガスを空気で希釈して屋外に排出する希釈ダクト（５）
とを有し， 該ポンプ（２），（３）は排気媒体に液体を使用しない
ドライ構造のものであり， 該除害塔（４）は担体に水素化物を酸化する酸化剤を被
覆した充填物が充填されていることを特徴とする減圧気
相成長装置。1. A reaction chamber (1) for accommodating a substrate and introducing a silane-based gas as a raw material gas to form a film on the substrate, and an exhaust system for depressurizing the reaction chamber. , A pump (2) for exhausting the reaction chamber,
(3), a detoxification tower (4) for adsorbing silane-based gas in the gas discharged from the pump, and a diluting duct for diluting the gas discharged from the detoxification tower with air and discharging the air outdoors ( 5)
The pumps (2) and (3) have a dry structure in which no liquid is used as an exhaust medium, and the detoxification tower (4) is a packing in which a carrier is coated with an oxidant that oxidizes hydride. A reduced pressure vapor phase growth apparatus characterized by being filled with a substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2038856A JP2539067B2 (en) | 1990-02-20 | 1990-02-20 | Low pressure vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2038856A JP2539067B2 (en) | 1990-02-20 | 1990-02-20 | Low pressure vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03241824A JPH03241824A (en) | 1991-10-29 |
| JP2539067B2 true JP2539067B2 (en) | 1996-10-02 |
Family
ID=12536848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2038856A Expired - Lifetime JP2539067B2 (en) | 1990-02-20 | 1990-02-20 | Low pressure vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2539067B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2215548B (en) * | 1988-02-26 | 1991-10-23 | Gen Electric Co Plc | A method of fabricating superconducting electronic devices |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5998293A (en) * | 1982-11-27 | 1984-06-06 | 能美防災工業株式会社 | Alarm and controller for semiconductor plant or the like |
| JPS60125233A (en) * | 1983-12-08 | 1985-07-04 | Mitsui Toatsu Chem Inc | High degree treatment of exhaust gas |
| JPS61293549A (en) * | 1985-06-20 | 1986-12-24 | Osaka Oxygen Ind Ltd | Waste gas processing agent in semiconductor industry |
| JPS62222630A (en) * | 1986-03-25 | 1987-09-30 | Matsushita Electric Ind Co Ltd | Vapor-phase reaction treating chamber |
| JPS63266813A (en) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | Manufacture of semiconductor device and treating apparatus used therefor |
-
1990
- 1990-02-20 JP JP2038856A patent/JP2539067B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03241824A (en) | 1991-10-29 |
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