JPH03241824A - Low-pressure vapor phase deposition device - Google Patents
Low-pressure vapor phase deposition deviceInfo
- Publication number
- JPH03241824A JPH03241824A JP3885690A JP3885690A JPH03241824A JP H03241824 A JPH03241824 A JP H03241824A JP 3885690 A JP3885690 A JP 3885690A JP 3885690 A JP3885690 A JP 3885690A JP H03241824 A JPH03241824 A JP H03241824A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction chamber
- exhaust
- exhaust system
- silane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 229910000077 silane Inorganic materials 0.000 claims abstract description 22
- 239000012895 dilution Substances 0.000 claims abstract description 13
- 238000010790 dilution Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000007800 oxidant agent Substances 0.000 claims abstract description 8
- 150000004678 hydrides Chemical class 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 11
- 239000000945 filler Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000007865 diluting Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
原料ガスにシラン系ガスを用いた減圧気相成長装置に関
し。[Detailed Description of the Invention] [Summary] This invention relates to a reduced pressure vapor phase growth apparatus using a silane gas as a source gas.
成長膜の結晶性及び装置の安全性を向上した排気系を有
する減圧気相成長装置を提供することを目的とし。The object of the present invention is to provide a reduced pressure vapor phase growth apparatus having an exhaust system that improves the crystallinity of the grown film and the safety of the apparatus.
基板を収容し、原料ガスとしてシラン系ガスを導入して
該基板上に成膜する反応室（１）と、該反応室内を減圧
する排気系とからなり、該排気系は。The exhaust system consists of a reaction chamber (1) that houses a substrate and introduces a silane gas as a raw material gas to form a film on the substrate, and an exhaust system that reduces the pressure inside the reaction chamber.
該反応室内を排気するポンプ（２）、 （３）と、該ポ
ンプから排出されるガス中のシラン系ガスを吸着する除
害塔（４）と、該除害塔から排出されるガスを空気で希
釈して屋外に排出する希釈ダクト（５）とを有し。Pumps (2) and (3) that exhaust the inside of the reaction chamber, an abatement tower (4) that adsorbs silane gas in the gas discharged from the pump, and an abatement tower (4) that converts the gas discharged from the abatement tower into air. and a dilution duct (5) for diluting the water and discharging it outdoors.
該ポンプ（２）、 （３）は排気媒体に液体を使用しな
いドライ構造のものであり、該除害塔（４）は担体に水
素化物を酸化する酸化剤を被覆した充填物が充填されて
いるように構成する。The pumps (2) and (3) are of a dry structure that does not use liquid as an exhaust medium, and the abatement tower (4) is filled with a carrier coated with an oxidizing agent that oxidizes hydrides. Configure it so that
本発明は原料ガスにシラン系ガスを用いた減圧気相成長
装置に関する。The present invention relates to a reduced pressure vapor phase growth apparatus using a silane gas as a source gas.
近年、半導体装置の高機能化に伴い、珪素（Ｓｉ）のエ
ピタキシャル成長は結晶性の改善が要求されている。In recent years, as semiconductor devices have become more sophisticated, improved crystallinity has been required for epitaxial growth of silicon (Si).
この要求に対応して９本発明はＣＣＤ等の高密度。In response to this demand, the present invention is a high-density device such as a CCD.
高集積度デバイスの製造に利用できる。It can be used to manufacture highly integrated devices.
従来の減圧気相成長装置（特に減圧エピタキシャル成長
装置）においては、成長膜の結晶性を落とす原因の一つ
である金属汚染を低減するため。In conventional low-pressure vapor phase growth equipment (especially low-pressure epitaxial growth equipment), this is to reduce metal contamination, which is one of the causes of degrading the crystallinity of the grown film.
Ｓｉの原料ガスは塩素等を含んだ腐食性のガスを避ける
傾向にあり、そのためにモノシラン（ＳｉＨ４）ジシラ
ン（ＳｉＪｇ）等のシラン系ガスが用いられている。The source gas for Si tends to avoid corrosive gases containing chlorine and the like, and for this purpose silane gases such as monosilane (SiH4) and disilane (SiJg) are used.
この場合、装置の排気系には水スクラバとロークリポン
プと希釈ダクトが使用されるのが一般的であった。In this case, the exhaust system of the equipment generally included a water scrubber, a low-pressure pump, and a dilution duct.
第２図は従来例による排気系を説明する模式図である。FIG. 2 is a schematic diagram illustrating a conventional exhaust system.
図において、ｌは反応室、６はロータリポンプ。In the figure, l is a reaction chamber and 6 is a rotary pump.
７は水スクラバ、５は希釈ダクトである。7 is a water scrubber, and 5 is a dilution duct.
反応室１内にウェハを入れ、ウェハ上にＳｉエピタキシ
ャル成長を行う際に反応室内を排気系により減圧してい
る。When a wafer is placed in a reaction chamber 1 and Si epitaxial growth is performed on the wafer, the pressure inside the reaction chamber is reduced by an exhaust system.
排気系はロータリポンプ６と水スクラバ７と希釈ダクト
５からなり、原料ガスを含んだ排気ガスはロータリポン
プ６により排気され、水スクラバ７により水に可溶な反
応生成物は水中に吸収されて希釈ダクト５に送られ、こ
こで空気で希釈して屋外に排出される。The exhaust system consists of a rotary pump 6, a water scrubber 7, and a dilution duct 5. The exhaust gas containing the raw material gas is exhausted by the rotary pump 6, and the water-soluble reaction products are absorbed into the water by the water scrubber 7. It is sent to the dilution duct 5, where it is diluted with air and discharged outdoors.
ところが、水スクラバは排気系中のシランの除去に効目
がなく、又、ロータリポンプから反応室への油の帰還や
、水スクラバから反応室への水の帰還により、成長膜の
膜質を落としていた。However, water scrubbers are not effective in removing silane from the exhaust system, and the return of oil from the rotary pump to the reaction chamber and the return of water from the water scrubber to the reaction chamber degrade the quality of the grown film. was.
従来例の排気系では油、水分の汚染を防止できず 成長
膜にシャロウビットが発生するという問題が生じていた
。Conventional exhaust systems were unable to prevent oil and moisture contamination, resulting in shallow bits forming in the grown film.
又、シランが除去しきれないので、安全上の問題もあっ
た。Furthermore, since the silane could not be completely removed, there was also a safety problem.
本発明は原料ガスにシラン系ガスを用いた成長膜の結晶
性及び装置の安全性を向上した排気系を有する減圧気相
成長装置を提供することを目的とする。An object of the present invention is to provide a reduced pressure vapor phase growth apparatus using a silane-based gas as a source gas and having an exhaust system that improves the crystallinity of a grown film and the safety of the apparatus.
上記課題の解決は、基板を収容し、原料ガスとしてシラ
ン系ガスを導入して該基板上に成膜する反応室（１）と
、該反応室内を減圧する排気系とからなり、該排気系は
、該反応室内を排気するポンプ（２）、 （３）と、該
ポンプから排出されるガス中のシラン系ガスを吸着する
除害塔（４）と、該除害塔から排出されるガスを空気で
希釈して屋外に排出する希釈ダクト（５）とを有し、該
ポンプ（２）、 （３）は排気媒体に液体を使用しない
ドライ構造のものであり、該除害塔（４）は担体に水素
化物を酸化する酸化剤を被覆した充填物が充填されてい
ることを特徴とする減圧気相成長装置により達成される
。The solution to the above problem consists of a reaction chamber (1) that houses a substrate, introduces a silane gas as a source gas to form a film on the substrate, and an exhaust system that reduces the pressure inside the reaction chamber. The pumps (2) and (3) exhaust the inside of the reaction chamber, the abatement tower (4) that adsorbs silane gas in the gas discharged from the pump, and the gas discharged from the abatement tower. The abatement tower (4) has a dilution duct (5) that dilutes it with air and discharges it outdoors, and the pumps (2) and (3) have a dry structure that does not use liquid as an exhaust medium. ) is achieved by a reduced pressure vapor phase growth apparatus characterized in that the carrier is filled with a filler coated with an oxidizing agent that oxidizes the hydride.
本発明は反応室の排気にメカニカルブースタポンプやド
ライポンプ等の油を使わないポンプを用いて反応室への
油や水の帰還をなくして成長膜の結晶性を向上し、又除
害塔の充填剤は酸化剤を付着した担体で。シランを酸化
してその表面に吸着除去するようにしたものである。The present invention improves the crystallinity of the grown film by eliminating the return of oil and water to the reaction chamber by using a pump that does not use oil, such as a mechanical booster pump or dry pump, to exhaust the reaction chamber. The filler is a carrier with an oxidizing agent attached. The silane is oxidized and removed by adsorption on its surface.
第１図は実施例による排気系を説明する模式図である。 FIG. 1 is a schematic diagram illustrating an exhaust system according to an embodiment.
図において、ｌは反応室、２はメカニカルブースタポン
プ、３はドライポンプ、４は除害塔、５は希釈ダクトで
ある。In the figure, l is a reaction chamber, 2 is a mechanical booster pump, 3 is a dry pump, 4 is an abatement tower, and 5 is a dilution duct.
反応室ｌ内にウェハを入れ、ウェハ上にＳｉエピタキシ
ャル成長を行う際に反応室内を排気系により減圧してい
る。A wafer is placed in a reaction chamber 1, and when Si epitaxial growth is performed on the wafer, the pressure inside the reaction chamber is reduced by an exhaust system.
排気系はメカニカルブースタポンプ２とモレキュラシー
プ等を用いたドライポンプ３と除害塔４と希釈ダクト５
とからなる。The exhaust system consists of a mechanical booster pump 2, a dry pump 3 using molecular sheep, etc., an abatement tower 4, and a dilution duct 5.
It consists of
シランガスを含んだ排気ガスはメカニカルブースタポン
プ２とドライポンプ３により排気され。Exhaust gas containing silane gas is exhausted by a mechanical booster pump 2 and a dry pump 3.
除害塔４によりシランは吸収除去されて希釈ダクト４に
送られ、ここで空気で希釈して屋外に排出される。The silane is absorbed and removed by the abatement tower 4 and sent to the dilution duct 4, where it is diluted with air and discharged outdoors.
ここで、充填剤は以下に示すものを使用した。Here, the following fillers were used.
担体の材質の例：アルミナ
担体の大きさの例：５ａ＋＋ｎ径の球
水素化物の酸化剤の例： Ｆｅ２０ａ
酸化剤の被覆厚さの例：１００μｍ
吸着酸化過程の化学式：
％式％
なお、実施例では排気系を構成する各装置間の配管はす
べてステンレス鋼管で行っている。Example of material of support: Example of size of alumina support: Example of oxidizing agent of sphere hydride with diameter of 5a++n: Fe20a Example of coating thickness of oxidizing agent: 100 μm Chemical formula of adsorption oxidation process: % formula % Note that Examples The piping between each device that makes up the exhaust system is all made of stainless steel pipes.
次に、実施例の効果を示す数値例を従来例と対比して例
示する。Next, a numerical example showing the effects of the embodiment will be illustrated in comparison with a conventional example.
Ｓｉ基板上に下記の同一条件で厚さ μｍのＳｉエピ膜
を成長し、成長膜のシャロウビット数を測定して両者の
比較を行った。A Si epitaxial film having a thickness of μm was grown on a Si substrate under the same conditions as described below, and the number of shallow bits of the grown film was measured to compare the two.
成長条件 原料ガス： ５１２Ｈ８１５０ＳＣＣＭ。growth conditions Raw material gas: 512H8150SCCM.
希釈ガス： ８２ １００ ＳＬＭ。Dilution gas: 82 100 SLM.
成長温度：９００°Ｃ。Growth temperature: 900°C.
ガス圧カニ ５ Ｔｏｒｒ。Gas pressure crab 5 Torr.
成長膜のシャロウビット数（ｃｍ−２）は次のように実
施例は従来例に比し１桁減少した。The shallow bit number (cm-2) of the grown film was reduced by one digit in the example as compared to the conventional example as shown below.
実施例：５００ 従来例： ｓｏｏ。Example: 500 Conventional example: soo.
実施例ではＳｉエピ膜の成長について説明したが。In the embodiment, the growth of a Si epitaxial film was explained.
シラン系ガスを使用する成膜１例えば二酸化珪素膜、窒
化珪素膜等の成長に本発明を適用しても発明の効果は変
わらない。Even if the present invention is applied to film formation 1 using a silane gas, for example, to the growth of a silicon dioxide film, a silicon nitride film, etc., the effects of the invention do not change.
以上説明したように本発明によれば、原料ガスにシラン
系ガスを用いた成長膜の結晶性及び装置の安全性を向上
した排気系を有する減圧気相成長装置が得られた。As explained above, according to the present invention, a reduced pressure vapor phase growth apparatus using a silane-based gas as a source gas and having an exhaust system that improves the crystallinity of the grown film and the safety of the apparatus is obtained.
第１図は実施例による排気系を説明する模式図。 第２図は従来例による排気系を説明する模式図である。 図において。 ■は反応室。 ２はメカニカルブースタポンプ。 ３はドライポンプ。 ４は除害塔。 ５は希釈ダクト 第 １ 図 イ差未例のＳ氏図 第 ２ 図 FIG. 1 is a schematic diagram illustrating an exhaust system according to an embodiment. FIG. 2 is a schematic diagram illustrating a conventional exhaust system. In fig. ■ is the reaction chamber. 2 is a mechanical booster pump. 3 is a dry pump. 4 is the abatement tower. 5 is dilution duct Part 1 figure Illustration of Mr. S with unprecedented difference Figure 2
Claims (1)
て該基板上に成膜する反応室（１）と、該反応室内を減
圧する排気系とからなり、 該排気系は、該反応室内を排気するポンプ（２）、（３
）と、該ポンプから排出されるガス中のシラン系ガスを
吸着する除害塔（４）と、該除害塔から排出されるガス
を空気で希釈して屋外に排出する希釈ダクト（５）とを
有し、 該ポンプ（２）、（３）は排気媒体に液体を使用しない
ドライ構造のものであり、 該除害塔（４）は担体に水素化物を酸化する酸化剤を被
覆した充填物が充填されていることを特徴とする減圧気
相成長装置。[Scope of Claims] A reaction chamber (1) that houses a substrate and introduces a silane gas as a source gas to form a film on the substrate, and an exhaust system that reduces the pressure inside the reaction chamber, the exhaust system are pumps (2) and (3) that exhaust the inside of the reaction chamber.
), an abatement tower (4) that adsorbs silane gas in the gas discharged from the pump, and a dilution duct (5) that dilutes the gas discharged from the abatement tower with air and discharges it outdoors. The pumps (2) and (3) are of a dry structure that does not use liquid as an evacuation medium, and the abatement tower (4) is filled with a carrier coated with an oxidizing agent that oxidizes hydrides. A reduced pressure vapor phase growth apparatus characterized by being filled with a substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2038856A JP2539067B2 (en) | 1990-02-20 | 1990-02-20 | Low pressure vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2038856A JP2539067B2 (en) | 1990-02-20 | 1990-02-20 | Low pressure vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03241824A true JPH03241824A (en) | 1991-10-29 |
| JP2539067B2 JP2539067B2 (en) | 1996-10-02 |
Family
ID=12536848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2038856A Expired - Lifetime JP2539067B2 (en) | 1990-02-20 | 1990-02-20 | Low pressure vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2539067B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4980341A (en) * | 1988-02-26 | 1990-12-25 | The General Electric Company, P.L.C. | Method of fabricating grain boundary Josephson junction |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5998293A (en) * | 1982-11-27 | 1984-06-06 | 能美防災工業株式会社 | Alarm and controller for semiconductor plant or the like |
| JPS60125233A (en) * | 1983-12-08 | 1985-07-04 | Mitsui Toatsu Chem Inc | High degree treatment of exhaust gas |
| JPS61293549A (en) * | 1985-06-20 | 1986-12-24 | Osaka Oxygen Ind Ltd | Waste gas processing agent in semiconductor industry |
| JPS62222630A (en) * | 1986-03-25 | 1987-09-30 | Matsushita Electric Ind Co Ltd | Vapor-phase reaction treating chamber |
| JPS63266813A (en) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | Manufacture of semiconductor device and treating apparatus used therefor |
-
1990
- 1990-02-20 JP JP2038856A patent/JP2539067B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5998293A (en) * | 1982-11-27 | 1984-06-06 | 能美防災工業株式会社 | Alarm and controller for semiconductor plant or the like |
| JPS60125233A (en) * | 1983-12-08 | 1985-07-04 | Mitsui Toatsu Chem Inc | High degree treatment of exhaust gas |
| JPS61293549A (en) * | 1985-06-20 | 1986-12-24 | Osaka Oxygen Ind Ltd | Waste gas processing agent in semiconductor industry |
| JPS62222630A (en) * | 1986-03-25 | 1987-09-30 | Matsushita Electric Ind Co Ltd | Vapor-phase reaction treating chamber |
| JPS63266813A (en) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | Manufacture of semiconductor device and treating apparatus used therefor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4980341A (en) * | 1988-02-26 | 1990-12-25 | The General Electric Company, P.L.C. | Method of fabricating grain boundary Josephson junction |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2539067B2 (en) | 1996-10-02 |
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