JP2535527Y2 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JP2535527Y2
JP2535527Y2 JP1987116818U JP11681887U JP2535527Y2 JP 2535527 Y2 JP2535527 Y2 JP 2535527Y2 JP 1987116818 U JP1987116818 U JP 1987116818U JP 11681887 U JP11681887 U JP 11681887U JP 2535527 Y2 JP2535527 Y2 JP 2535527Y2
Authority
JP
Japan
Prior art keywords
frame
resin
semiconductor element
substrate
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1987116818U
Other languages
Japanese (ja)
Other versions
JPS6422038U (en
Inventor
裕 奥秋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP1987116818U priority Critical patent/JP2535527Y2/en
Publication of JPS6422038U publication Critical patent/JPS6422038U/ja
Application granted granted Critical
Publication of JP2535527Y2 publication Critical patent/JP2535527Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【考案の詳細な説明】 (産業上の利用分野) 本考案は、配線パターンを形成した基板上に直接半導
体素子を搭載して樹脂で封止した半導体装置に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION (Industrial application field) The present invention relates to a semiconductor device in which a semiconductor element is directly mounted on a substrate on which a wiring pattern is formed and sealed with a resin.

(従来の技術) 従来、このような分野の技術としては、例えば特開昭
58-48442号公報あるいは特開昭58-17646号公報に開示さ
れるものがあった。
(Prior Art) Conventionally, technologies in such a field include, for example,
There are those disclosed in Japanese Patent Application Laid-Open No. 58-48442 or Japanese Patent Application Laid-Open No. 58-17646.

第5図はかかる従来の半導体装置の平面図である。 FIG. 5 is a plan view of such a conventional semiconductor device.

この図において、1は配線パターン2を形成した基板
であり、この基板1の中央部に半導体素子3が搭載さ
れ、この半導体素子3の電極はワイヤ4により前記配線
パターン2に接続される。また、その配線部と前記半導
体素子部を囲むように四角形の枠体5がエポキシ樹脂な
どで基板1上に接着固定され、この枠体5内には、前記
配線部と半導体素子部を埋め込むように樹脂6が充填さ
れる。
In this figure, reference numeral 1 denotes a substrate on which a wiring pattern 2 is formed, and a semiconductor element 3 is mounted on a central portion of the substrate 1, and electrodes of the semiconductor element 3 are connected to the wiring pattern 2 by wires 4. Further, a rectangular frame 5 is adhesively fixed on the substrate 1 with epoxy resin or the like so as to surround the wiring portion and the semiconductor element portion, and the wiring portion and the semiconductor element portion are embedded in the frame 5. Is filled with resin 6.

この樹脂6を充填する際、この樹脂6は枠体5内の中
心部に注入される。すると、樹脂6は、この樹脂の流動
性により広がり、最も短距離にある枠体5の各辺の中央
部に接する。その後、樹脂6は枠体5の各辺に沿って流
れて枠体5の角部へと広がり枠体5内の全体を埋める。
When filling the resin 6, the resin 6 is injected into the center of the frame 5. Then, the resin 6 spreads due to the fluidity of the resin, and comes into contact with the center of each side of the frame 5 which is the shortest distance. After that, the resin 6 flows along each side of the frame 5 and spreads to the corners of the frame 5 to fill the entire inside of the frame 5.

(考案が解決しようとする課題) しかしながら、上記した従来の半導体装置は四角形の
枠体5を有しており、樹脂6が枠体5の各辺に沿って流
れて枠体5の角部に広がる時、広がる樹脂6の量が除々
に少なくなるので、広がりが除々に弱くなり、したがっ
て、前述のような四角形の枠体5では、この枠体5の角
部に樹脂6の未充填部7が発生する問題点があった。
(Problem to be Solved by the Invention) However, the above-described conventional semiconductor device has the rectangular frame 5, and the resin 6 flows along each side of the frame 5, and the resin 6 flows into the corner of the frame 5. When spreading, the amount of the spreading resin 6 gradually decreases, and the spreading gradually weakens. Therefore, in the rectangular frame 5 as described above, the unfilled portion 7 of the resin 6 There was a problem that occurs.

この問題点は、枠体5内に多量に樹脂6を注入すれば
解決できる。しかし、注入樹脂量が多いと、枠体5の高
さより高く樹脂6が盛り上がってしまい、一定の高さま
では許容されるとしても、高さ不良が発生するという問
題点があった。
This problem can be solved by injecting a large amount of the resin 6 into the frame 5. However, when the amount of the injected resin is large, the resin 6 rises higher than the height of the frame 5, and there is a problem that a height defect occurs even if the resin 6 is allowed at a certain height.

本考案は上記の点に鑑みてなされたもので、樹脂注入
量を多くすることなく、したがって高さ不良の発生を無
くして、未充填部の発生の問題点を解決できる半導体装
置を提供することを目的とする。
The present invention has been made in view of the above points, and it is an object of the present invention to provide a semiconductor device which can solve the problem of the occurrence of an unfilled portion without increasing the amount of injected resin and thus eliminating the occurrence of a height defect. With the goal.

(問題点を解決するための手段) 本考案は、上記目的を達成するために、配線パターン
を形成した基板と、この基板上に搭載された半導体素子
と、この半導体素子と前記配線パターンとを電気的に接
続したワイヤと、前記半導体素子を囲み封止樹脂を封止
する枠体とを具備する半導体装置において、前記基板上
に前記枠体が楕円形状であり、この枠体の長軸方向に長
く、前記枠体の短軸方向に短い長方形状の半導体素子を
前記枠体の略中心に位置させるとともに、前記枠体の略
中心上方より滴下充填され、前記枠体の内側で前記半導
体素子及び前記ワイヤを覆う封止樹脂とを設けるように
したものである。
(Means for Solving the Problems) In order to achieve the above object, the present invention relates to a substrate on which a wiring pattern is formed, a semiconductor element mounted on the substrate, and the semiconductor element and the wiring pattern. In a semiconductor device comprising an electrically connected wire and a frame surrounding the semiconductor element and sealing a sealing resin, the frame is elliptical on the substrate, and a longitudinal direction of the frame is provided. A rectangular semiconductor element that is longer and shorter in the short axis direction of the frame is positioned substantially at the center of the frame, and is dropped and filled from above substantially the center of the frame, and the semiconductor element is positioned inside the frame. And a sealing resin that covers the wire.

(作用) 本考案によれば、枠体内には、この枠体によって囲ま
れた配線部と枠体の長軸方向に長く、枠体の短軸方向に
短い長方形状の半導体素子を封止するように樹脂が充填
される。その際、樹脂は、枠体内の中心に充填される。
すると、樹脂は、この樹脂の流動性により広がり、例え
ば、第2図に示すように、最も短距離にある枠体の長辺
の中央部に接する。その後、樹脂は、半導体素子の形状
と相俟って枠体の長辺に沿って流れて枠体の長軸方向に
更に広がり、最終的に枠体内の全体を埋める。この時、
広がる樹脂の量が除々に少なくなるので、広がりが除々
に弱くなる。
(Operation) According to the present invention, a rectangular semiconductor element which is long in the major axis direction and short in the minor axis direction of the frame is sealed in the frame within the wiring portion surrounded by the frame. So that the resin is filled. At that time, the resin is filled into the center of the frame.
Then, the resin spreads due to the fluidity of the resin, and comes into contact with the center of the long side of the shortest distance frame, for example, as shown in FIG. Thereafter, the resin flows along the long side of the frame along with the shape of the semiconductor element, and further spreads in the longitudinal direction of the frame, and finally fills the entire inside of the frame. At this time,
As the amount of spreading resin gradually decreases, the spreading gradually weakens.

しかるに、楕円形の枠体によれば、樹脂の滴下点から
最も近い部分(2個所)を両端にもち、その両端間を結
び区画される枠体領域(2領域)が、面積及び枠体長が
共に同じ形状であり、さらにその区画領域の1つに対
し、その両端の各端から樹脂の滴下点から最も離れてい
る部分までの距離がそれぞれ等しく、且つその両端から
その部分に向かって徐々に狭まった形状になっているの
で、区画領域のそれぞれが同様に、樹脂の滴下点からの
直接的な広がりに加え、樹脂の滴下点から近い距離の枠
体に到達し、その枠体に沿う間接的な広がりが、樹脂の
滴下点から最も離れた部分まで強く働き、したがって、
弱い少ない樹脂の広がりによっても、枠体全域にわたっ
て、その間接的な広がりをもたらし、未充填部を残すこ
となく、枠体の内側の全体が樹脂で埋められることにな
る。
However, according to the elliptical frame, the frame region (two regions) which has the nearest portion (two places) from the resin dropping point at both ends and is bounded between the both ends has an area and a frame length. Both have the same shape, and further, for one of the divided areas, the distance from each end of both ends to the part farthest from the dropping point of the resin is equal, and gradually from both ends toward the part. Because of the narrowed shape, each of the divided areas similarly extends directly from the resin dropping point, reaches the frame close to the resin dropping point, and indirectly follows the frame. Spreading works strongly up to the part farthest from the resin dropping point,
The weakly small spread of the resin also causes its indirect spread over the entire frame, so that the entire inside of the frame is filled with the resin without leaving unfilled portions.

(実施例) 以下、本考案の実施例を図面を参照して説明する。Hereinafter, embodiments of the present invention will be described with reference to the drawings.

第1図は本考案の第1の実施例を示す半導体装置の平
面図である。
FIG. 1 is a plan view of a semiconductor device showing a first embodiment of the present invention.

この第1の実施例では、枠体11が、短軸と長軸を有す
る円形の一具体例として楕円形に形成される。その他は
第5図の従来例と同一であり、同一部分には同一符号を
付してその説明を省略する。
In the first embodiment, the frame 11 is formed in an elliptical shape as a specific example of a circle having a short axis and a long axis. The rest is the same as the conventional example of FIG. 5, and the same parts are denoted by the same reference numerals and description thereof will be omitted.

枠体11内には、この枠体11で囲まれた配線部と、枠体
11の長軸方向に長く、前記枠体の短軸方向に短い長方形
状の半導体素子3を封止するように樹脂6が充填される
が、その際、樹脂6は枠体11の中心に滴下される。する
と、樹脂6は、この樹脂6の流動性により広がり、第2
図に示すように、最も短距離にある枠体11の長辺11aの
中央部に接する。その後、樹脂6は、枠体11の長辺11a
に沿って流れて枠体11の長軸方向に更に広がり、最終的
に枠体11内の全体を埋める。この時、広がる樹脂6の量
が除々に少なくなるので、広がりが除々に弱くなる。
Inside the frame 11, a wiring portion surrounded by the frame 11, a frame
The resin 6 is filled so as to seal the rectangular semiconductor element 3 which is long in the long axis direction of the frame 11 and short in the short axis direction of the frame. At this time, the resin 6 is dropped at the center of the frame 11. Is done. Then, the resin 6 spreads due to the fluidity of the resin 6, and the second
As shown in the figure, the shortest distance comes in contact with the center of the long side 11a of the frame body 11. After that, the resin 6 is applied to the long side 11a of the frame 11.
And spreads further in the longitudinal direction of the frame 11, and finally fills the entire inside of the frame 11. At this time, the spread of the resin 6 gradually decreases, so that the spread gradually decreases.

しかるに、楕円形の枠体11によれば、長辺11aの中央
部を両端にもち、その両端間を結び区画される枠体領域
(2領域)が、面積及び枠体長が共に同じ形状であり、
さらにその区画領域の一つに対し、その両端の各端から
樹脂の滴下点から最も離れている部分までの距離がそれ
ぞれ等しく、且つその両端その部分に向かって短軸方向
が徐々に狭まっている形状にあるので、区画領域のそれ
ぞれが同様に、樹脂の滴下点からの直接的な広がりに加
え、樹脂の滴下点から短い距離の枠体に到達し、その枠
体に沿う間接的な広がりが、樹脂の滴下点から離れた部
分まで強く働き、したがって、弱い少ない樹脂の広がり
によっても、枠体全域にわたってその間接的な広がりを
もたらし、未充填部を残すことなく枠体の内側の全体が
樹脂で埋められることになる。
However, according to the elliptical frame 11, the center region of the long side 11a is at both ends, and the frame regions (two regions) which are connected and partitioned between both ends have the same shape in both area and frame length. ,
Furthermore, for one of the divided regions, the distance from each end of both ends to the part farthest from the dropping point of the resin is equal to each other, and the short-axis direction is gradually narrowed toward the part at both ends. Because of the shape, each of the partitioned areas similarly reaches the frame at a short distance from the resin drop point in addition to the direct spread from the resin drop point, and the indirect spread along the frame body Works strongly up to the part distant from the resin dropping point, so even the weak little resin spread causes its indirect spread over the entire frame body, and the entire inside of the frame body is filled with resin without leaving unfilled parts. Will be filled in.

このように、楕円形の枠体11によれば、半導体素子の
形状と相俟って、樹脂6の充填性が向上し、未充填部の
発生を防止できる。しかも、充填樹脂量を多くしない
で、未充填部の発生を防止できるものであり、したがっ
て高さ不良の発生も無くなる。
As described above, according to the elliptical frame 11, the filling property of the resin 6 is improved in combination with the shape of the semiconductor element, and the generation of the unfilled portion can be prevented. In addition, the occurrence of unfilled portions can be prevented without increasing the amount of the filled resin, so that the occurrence of height defects is also eliminated.

第3図は本考案の第2の実施例を示す半導体装置の平
面図である。
FIG. 3 is a plan view of a semiconductor device showing a second embodiment of the present invention.

この第2の実施例では、枠体12を樹脂の滴下点から最
も近い部分(2個所)を両端にもち、その両端間を結び
区画される枠体領域(2領域)が、面積及び枠体長が共
に同じ形状であり、さらに、その区画領域の1つに対
し、その両端の各端から樹脂の滴下点から最も離れてい
る部分までの距離がそれぞれ等しく、且つその両端から
その部分に向かって徐々に狭まっている形状、すなわ
ち、楕円形の他の具体例として長円形状にしたものであ
る。このような形状としても第1の実施例と全く同様の
効果を得ることができる。
In the second embodiment, the frame body 12 has portions (two places) closest to the resin dropping point at both ends, and a frame region (two regions) bounded between the both ends is an area and a frame length. Have the same shape, and further, for one of the divided areas, the distance from each end of both ends to the portion farthest from the resin dropping point is equal, and from one end to the other end, It has a gradually narrowing shape, that is, an elliptical shape as another specific example of an elliptical shape. Even with such a shape, it is possible to obtain exactly the same effects as in the first embodiment.

なお、本考案の枠体に類似するものとして、第4図に
示すように、真円の枠体13が考えられる。しかるに、こ
の真円の枠体13の場合は、中心に滴下された樹脂6が枠
体13に沿って流れることなしに、最後までそれ自身の流
動性のみで広がっていって全体を埋めなければならな
い。しかし、その場合は、樹脂6の表面張力と基板1の
撥水性によって樹脂6が球状となり、さらに樹脂6の滴
下が枠体13内の中心であり、その滴下点から枠体13まで
の距離が全て等しいことから、最初に到達する枠体13、
いわゆる樹脂の滴下点から最も短距離にある枠体13の部
分は無いので、最後まで良好に広がらないという問題点
がある。
In addition, as shown in FIG. 4, a frame 13 of a perfect circle can be considered as similar to the frame of the present invention. However, in the case of the frame 13 having a perfect circle, the resin 6 dropped at the center does not flow along the frame 13 but spreads only by its own fluidity to the end, so that the whole should be filled. No. However, in this case, the resin 6 becomes spherical due to the surface tension of the resin 6 and the water repellency of the substrate 1, and the dripping of the resin 6 is the center in the frame 13, and the distance from the drop point to the frame 13 is Since they are all equal, the frame 13, which arrives first,
Since there is no portion of the frame 13 that is the shortest distance from the so-called resin dropping point, there is a problem that the frame 13 does not spread well to the end.

これに対して、本考案の枠体によれば、第1の実施例
において詳細に説明したように、途中からは、枠体の内
面に沿って樹脂が流れることによる広がり、すなわち毛
細管現象的な現象を利用しての広がりを利用するもので
あり、したがって最後まで樹脂を良好に広げることがで
きるものである。
On the other hand, according to the frame of the present invention, as described in detail in the first embodiment, the resin spreads from the middle along the inner surface of the frame, that is, a capillary phenomenon. This is to utilize the spread using the phenomenon, and therefore, it is possible to spread the resin well to the end.

なお、本考案は上記実施例に限定されるものではな
く、本考案の趣旨に基づいて種々の変形が可能であり、
これらを本考案の範囲から排除するものではない。
Note that the present invention is not limited to the above embodiment, and various modifications are possible based on the gist of the present invention.
These are not excluded from the scope of the present invention.

(考案の効果) 以上詳細に説明したように、本考案によれば、基板上
に枠体が楕円形状であり、この枠体の長軸方向に長く、
前記枠体の短軸方向に短い長方形状の半導体素子を前記
枠体の略中心に位置させるとともに、前記枠体の略中心
上方より滴下充填され、前記枠体の内側で前記半導体素
子及び前記ワイヤを覆う封止樹脂を設けるようにしたの
で、半導体素子の形状とも相俟って、樹脂の充填性を向
上させ、未充填部の発生を防止することができる。
(Effects of the Invention) As described in detail above, according to the present invention, the frame has an elliptical shape on the substrate, and is long in the longitudinal direction of the frame.
A rectangular semiconductor element, which is short in the short axis direction of the frame, is positioned substantially at the center of the frame, and the semiconductor element and the wire are filled by dripping from substantially above the center of the frame, inside the frame. Is provided, so that the resin filling property can be improved and the occurrence of unfilled portions can be prevented in combination with the shape of the semiconductor element.

したがって、配線部と素子部を樹脂で完全に封止する
ことができ、信頼性の高い半導体装置を得ることができ
る。
Therefore, the wiring portion and the element portion can be completely sealed with the resin, and a highly reliable semiconductor device can be obtained.

しかも、本考案によれば、上記のような良好な充填状
態を、充填樹脂量を多くすることなく得ることができる
ものであり、したがって、充填樹脂量が多いことによる
高さ不良の発生も無くすことができる。
Moreover, according to the present invention, it is possible to obtain the above-mentioned favorable filling state without increasing the amount of the filled resin, and therefore, it is possible to eliminate the occurrence of the height defect due to the large amount of the filled resin. be able to.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本考案の第1の実施例を示す半導体装置の平面
図、第2図は第1の実施例における樹脂の広がりを説明
するための平面図、第3図は本考案の第2の実施例を示
す半導体装置の平面図、第4図は類似例を示す平面図、
第5図は従来の半導体装置の平面図である。 1……基板、2……配線パターン、3……半導体素子、
4……ワイヤ、6……樹脂、11,12……枠体。
FIG. 1 is a plan view of a semiconductor device showing a first embodiment of the present invention, FIG. 2 is a plan view for explaining the spread of resin in the first embodiment, and FIG. 3 is a second embodiment of the present invention. FIG. 4 is a plan view showing a similar example,
FIG. 5 is a plan view of a conventional semiconductor device. 1 ... substrate, 2 ... wiring pattern, 3 ... semiconductor element,
4 ... wire, 6 ... resin, 11,12 ... frame.

Claims (1)

(57)【実用新案登録請求の範囲】(57) [Scope of request for utility model registration] 【請求項1】配線パターンを形成した基板と、該基板上
に搭載された半導体素子と、該半導体素子と前記配線パ
ターンとを電気的に接続したワイヤと、前記半導体素子
を囲み封止樹脂を封止する枠体とを具備する半導体装置
において、 前記基板上に前記枠体が楕円形状であり、該枠体の長軸
方向に長く、前記枠体の短軸方向に短い長方形状の半導
体素子を前記枠体の略中心に位置させるとともに、前記
枠体の略中心上方より滴下充填され、前記枠体の内側で
前記半導体素子及び前記ワイヤを覆う封止樹脂とを備え
た半導体装置。
A substrate on which a wiring pattern is formed, a semiconductor element mounted on the substrate, a wire electrically connecting the semiconductor element to the wiring pattern, and a sealing resin surrounding the semiconductor element. A semiconductor device comprising a frame to be sealed, wherein the frame is elliptical on the substrate, longer in a major axis direction of the frame, and shorter in a minor axis direction of the frame. And a sealing resin that is positioned substantially at the center of the frame, is dropped and filled from substantially above the center of the frame, and covers the semiconductor element and the wires inside the frame.
JP1987116818U 1987-07-31 1987-07-31 Semiconductor device Expired - Lifetime JP2535527Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987116818U JP2535527Y2 (en) 1987-07-31 1987-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987116818U JP2535527Y2 (en) 1987-07-31 1987-07-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6422038U JPS6422038U (en) 1989-02-03
JP2535527Y2 true JP2535527Y2 (en) 1997-05-14

Family

ID=31359705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987116818U Expired - Lifetime JP2535527Y2 (en) 1987-07-31 1987-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2535527Y2 (en)

Also Published As

Publication number Publication date
JPS6422038U (en) 1989-02-03

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