JP2528925B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2528925B2 JP2528925B2 JP63010732A JP1073288A JP2528925B2 JP 2528925 B2 JP2528925 B2 JP 2528925B2 JP 63010732 A JP63010732 A JP 63010732A JP 1073288 A JP1073288 A JP 1073288A JP 2528925 B2 JP2528925 B2 JP 2528925B2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- semiconductor device
- bent
- bent portion
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の技術に関し、特にガルウィン
グタイプ等のリードを有する半導体装置に適用して有効
な技術に関する。Description: TECHNICAL FIELD The present invention relates to a semiconductor device technique, and more particularly to a technique effectively applied to a semiconductor device having a lead of a gull wing type or the like.
半導体装置として、たとえばガルウィングタイプのリ
ード等をパッケージに備えた半導体装置、すなわちリー
ドの各屈曲部の内側が該リード表裏側に夫々位置される
半導体装置がある。As a semiconductor device, for example, there is a semiconductor device having a package such as a gull wing type lead, that is, a semiconductor device in which the inside of each bent portion of the lead is located on the front and back sides of the lead.
一方、パッケージから突出されたリードの断面形状
が、たとえば特開昭60−123047号公報に記載されている
ように略台形状とされている半導体装置がある。On the other hand, there is a semiconductor device in which the cross-sectional shape of the lead protruding from the package is a substantially trapezoidal shape as described in Japanese Patent Laid-Open No. 60-123047.
しかしながら、前記したガルウィングタイプのリード
等を備えた半導体装置においては、リードの屈曲部が該
リードの表裏側へ夫々屈曲されて形成されるため、その
リードの夫々の屈曲部の断面形状が各個所に同一の台形
状に形成されていると、たとえばリードの表側への屈曲
部はその内側が外側の横幅より狭幅とされるが、逆にリ
ードの裏側への屈曲部はその内側が外側の横幅より広幅
とされる。However, in the above-described semiconductor device having the gull wing type lead or the like, since the bent portions of the lead are formed by being bent to the front and back sides of the lead, the cross-sectional shape of each bent portion of the lead is different at each position. If the lead is bent to the front side, the inner side is narrower than the lateral width of the outer side when the lead is bent to the front side. Wider than the width.
この場合に、内側が狭幅側とされた屈曲部は問題がな
いが、内側が広幅側とされた屈曲部はその内側に成形時
の応力が集中されるため、リードの切断成形，製品の選
別や運搬時などにリードが変形ないし破損し易くなると
いう問題点があることが本発明者によって明らかにされ
た。In this case, there is no problem in the bent portion whose inner side is the narrow side, but the bending portion whose inner side is the wide side concentrates the stress during molding on the inner side thereof, so that lead cutting and product It has been clarified by the present inventor that there is a problem that the lead is easily deformed or damaged during selection or transportation.
本発明の目的は、リードの変形ないし破損を確実に防
止することができ、装置の信頼性の向上を図ることがで
きる半導体装置を提供することにある。An object of the present invention is to provide a semiconductor device capable of reliably preventing deformation or damage of leads and improving the reliability of the device.
本発明の前記ならびにその他の目的の新規な特徴は、
本明細書の記述および添付図面から明らかになるであろ
う。The novel features of the above and other objects of the present invention are as follows.
It will be apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概
要を簡単に説明すれば、次の通りである。The outline of a typical invention among the inventions disclosed in the present application will be briefly described as follows.
すなわち、リードの各屈曲部の内側の幅が夫々の屈曲
部の外側の幅より狭幅に形成されている半導体装置であ
る。That is, it is a semiconductor device in which the inner width of each bent portion of the lead is formed to be narrower than the outer width of each bent portion.
前記した手段によれば、各屈曲部は夫々の内側が夫々
の外側より狭幅に形成されていることにより、各屈曲部
の内側にその成形時の応力が集中されることがないの
で、該応力集中に起因するリードの変形ないし破損を確
実に防止することができる。According to the above-mentioned means, since each inner side of each bent portion is formed narrower than each outer side, stress during molding is not concentrated on the inner side of each bent portion. It is possible to reliably prevent the lead from being deformed or damaged due to stress concentration.
〔実施例１〕 第１図は本発明の一実施例である半導体装置を示す断
面図、第２図は第１図のII−II線における拡大断面図、
第３図は第１図のIII−III線における拡大断面図、第４
図は第１図のIV−IV線における拡大断面図である。[Embodiment 1] FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention, FIG. 2 is an enlarged sectional view taken along line II-II of FIG.
FIG. 3 is an enlarged sectional view taken along line III-III in FIG.
The drawing is an enlarged sectional view taken along line IV-IV in FIG.
本実施例の半導体装置１は、フラットパッケージ形の
半導体装置とされ、エポキシ樹脂等の合成樹脂によって
モールド成形されたパッケージ２と、このパッケージ２
の四側面から夫々延在されたリード３とを備えている。The semiconductor device 1 of the present embodiment is a flat package type semiconductor device, and a package 2 molded by a synthetic resin such as an epoxy resin, and the package 2.
And the leads 3 respectively extended from the four side surfaces of the.
前記パッケージ２内の略中央には、半導体ペレット４
がタブ５上に銀ペースト等の接合材（図示せず）によっ
て取り付けられている。A semiconductor pellet 4 is provided at the approximate center of the package 2.
Are attached to the tabs 5 by a bonding material (not shown) such as silver paste.
半導体ペレット４は、タブ５の外周囲のパッケージ２
内に放射状に形成されたリード３に、金等からなるワイ
ヤ６を介して電気的に接続されている。The semiconductor pellet 4 is a package 2 around the outer periphery of the tab 5.
The leads 3 formed radially inside are electrically connected via wires 6 made of gold or the like.
前記パッケージ２外のリード３は、その長手方向の２
個所に屈曲部3a,3bが夫々形成され、これらの屈曲部3a,
3bはパッケージ２外のリード３の基端側が該リード３の
裏側（第１図においては下側）に下り曲げられ、またそ
の自由端側が該リード３の表側（第１図においては上
側）に折り曲げられて成形されて形成されている。The leads 3 outside the package 2 are
Bent portions 3a, 3b are formed at the respective points, and these bent portions 3a, 3b
3b, the base end side of the lead 3 outside the package 2 is bent downward to the back side (lower side in FIG. 1) of the lead 3, and its free end side is the front side of the lead 3 (upper side in FIG. 1). It is formed by bending and molding.
このように形成された屈曲部3a,3bは、第２図ないし
第３図に示すようにその断面形状が夫々等脚台形状に形
成されている。The bent portions 3a, 3b formed in this way are each formed in an isosceles trapezoidal cross-sectional shape, as shown in FIGS.
しかし、屈曲部3aの断面形状は第２図に示すように下
底が上底より短辺の台形状に形成されているのに対し、
他方の屈曲部3bの断面形状は第３図に示すように下底が
上底より長辺の台形状に形成されている。However, the cross-sectional shape of the bent portion 3a has a trapezoidal shape in which the lower bottom is shorter than the upper bottom as shown in FIG.
As shown in FIG. 3, the other bent portion 3b has a trapezoidal shape in which the lower bottom is longer than the upper bottom.
屈曲部3a,3bは、このように上下逆方向の台形状の断
面形状に形成されていることにより、夫々の折り曲げ方
向の内側の幅が夫々の折り曲げ方向の外側の幅より狭幅
に形成されていて、夫々の屈曲部3a,3bの内側に折り曲
げ成形時等の応力が夫々集中されない構造とされてい
る。Since the bent portions 3a and 3b are thus formed in a trapezoidal cross-sectional shape in the upside-down direction, the inner width in each bending direction is formed to be narrower than the outer width in each bending direction. However, the stress is not concentrated on the inside of the respective bent portions 3a and 3b during bending and the like.
このような屈曲部3aの台形状の断面形状は、リード３
のパッケージ２内の部位から該屈曲部3a,3bの略中間近
くの部位まで連続されている。また、屈曲部3bの台形状
の断面形状は、該屈曲部3b付近から該屈曲部3a,3bの略
中間近くの部位まで連続されている。Such a trapezoidal cross-sectional shape of the bent portion 3a has a lead 3
From the portion inside the package 2 to the portion near the middle of the bent portions 3a and 3b. In addition, the trapezoidal cross-sectional shape of the bent portion 3b is continuous from the vicinity of the bent portion 3b to a portion near the middle of the bent portions 3a and 3b.
そして、屈曲部3a,3bの略中間部位におけるリード３
の断面形状は、上下逆方向の台形が互いに他方の台形形
状に次第に連続して近づいていく形状に形成されてい
る。Then, the lead 3 at a substantially middle portion between the bent portions 3a and 3b
The cross-section is formed such that the trapezoids in the upside-down direction gradually and continuously approach each other.
また、基板（図示せず）等に接合されるリード３の先
端部3cの断面形状は、第４図に示すように屈曲部3aの断
面形状と同様に逆さ台形状に形成されて基板に対する接
合面側（第１図においては下面側）がその反対面側より
挟幅に形成されている。Further, as shown in FIG. 4, the cross-sectional shape of the tip portion 3c of the lead 3 joined to a substrate (not shown) or the like is formed in an inverted trapezoidal shape like the cross-sectional shape of the bent portion 3a and joined to the substrate. The surface side (lower surface side in FIG. 1) is formed with a narrower width than the opposite surface side.
そして、このような断面形状のリード３の先端部3cが
基板にはんだ等の接合材（図示せず）によって接合され
る場合に、そのはんだ等の接合材がリード３の先端部3c
の斜辺下側とその部位の基板に十分添付されることによ
り、基板のリード３の接合面側のスペースを狭小させる
ことなく、リード３と基板との接合部の強度を高めるこ
とができるようになっている。When the tip 3c of the lead 3 having such a cross-sectional shape is joined to the substrate by a joining material (not shown) such as solder, the joining material such as solder is attached to the tip 3c of the lead 3.
By being sufficiently attached to the lower side of the hypotenuse and the substrate on that portion, the strength of the joint between the lead 3 and the substrate can be increased without narrowing the space on the joint surface side of the lead 3 of the substrate. Has become.
なお、前記したようなリード２の断面形状は、たとえ
ばエッチング加工、あるいは研摩加工等によって形成さ
れている。The cross-sectional shape of the lead 2 as described above is formed, for example, by etching or polishing.
次に、本実施例の作用について説明する。 Next, the operation of this embodiment will be described.
先ず、本実施例のリード３は、その折り曲げ成形前の
状態において、パッケージ２の側面から該パッケージ２
の水平方向に突出されて延出されている。First, the lead 3 of the present embodiment, in a state before its bending and forming, is mounted on the package 2 from the side surface of the package 2.
Is projected and extended in the horizontal direction.
また、このリード３は、エッチング加工等によって、
少なくとも屈曲部3aとなるべき部位と、基板等にはんだ
付け等によって接合される先端部3cとが第２図と第４図
に夫々示すようにリード３の裏側（第１図においては下
側）の幅がリード３の表側（第１図においては上側）の
幅より狭幅に形成され、また屈曲部3bとなるべき部位が
第３図に示すようにリード３の表側（第１図においては
上側）の幅がリード３の裏側（第１図においては下側）
の幅より狭幅に形成されている。In addition, the lead 3 is formed by etching or the like.
At least the portion which should be the bent portion 3a and the tip portion 3c joined to the substrate by soldering or the like are the back side of the lead 3 (lower side in FIG. 1) as shown in FIGS. 2 and 4, respectively. Is formed to be narrower than the width of the front side (upper side in FIG. 1) of the lead 3, and the portion to be the bent portion 3b is, as shown in FIG. 3, the front side of the lead 3 (in FIG. 1). The width of the upper side is the back side of the lead 3 (the lower side in FIG. 1)
Is formed to be narrower than the width.
そして、このように形成されたリードは、折り曲げ成
形等によって屈曲部3aとなるべき部位がリード３の裏側
に折り曲げ成形されて屈曲部3aが形成され、また屈曲部
3bとなるべき部位がリード３の表側に折り曲げ成形され
て屈曲部3bが形成される。In the lead thus formed, the portion to be the bent portion 3a is bent and formed on the back side of the lead 3 to form the bent portion 3a, and the bent portion 3a is formed.
The portion to be 3b is bent and formed on the front side of the lead 3 to form the bent portion 3b.
この場合に、屈曲部3a,3bは、夫々の折り曲げの内側
が外側より狭幅に形成されているので、折り曲げ成形の
容易化を図ることができる。In this case, since the bent portions 3a and 3b are formed so that the inner side of each bending is narrower than the outer side, the bending and shaping can be facilitated.
また、各屈曲部3a,3bの内側に応力が集中されないの
で、リード３の変形ないし破損を確実に防止することが
できる。Further, since stress is not concentrated inside the bent portions 3a and 3b, it is possible to reliably prevent the lead 3 from being deformed or damaged.
更に、本実施例の半導体装置の基板（図示せず）への
取り付けに際しては、リード３の先端部3cが、基板の接
合面側（第１図において下面側）の幅が反対側の幅より
狭幅に形成されていることにより、はんだ等の接合材が
リード３の斜辺下側とその部位の基板に十分添加されて
リード３と基板とが接合されるので、基板のリード３の
接合面側のスペースを狭小させることなく、リード３と
基板との接合部の強度を高めることができる。Furthermore, when mounting the semiconductor device of this embodiment on a substrate (not shown), the width of the tip 3c of the lead 3 on the bonding surface side (the lower surface side in FIG. 1) of the substrate is smaller than the width on the opposite side. Since it is formed to have a narrow width, a bonding material such as solder is sufficiently added to the lower side of the hypotenuse of the lead 3 and the substrate in that portion to bond the lead 3 and the substrate, and thus the bonding surface of the lead 3 of the substrate The strength of the joint between the lead 3 and the substrate can be increased without narrowing the side space.
このように本実施例によれば、以下の効果を得ること
ができる。As described above, according to the present embodiment, the following effects can be obtained.
（１）．屈曲部3a,3bは夫々の折り曲げの内側が夫々の
外側より狭幅に形成されていることにより、折り曲げ成
形時に各屈曲部3a,3bの内側に応力が集中されないの
で、リード３の折り曲げ成形時，製品の選別時や運搬時
などにおけるリード３の変形や破損を確実に防止するこ
とができる。(1). Since the bending portions 3a and 3b are formed so that the inner side of each bending portion is narrower than the outer side thereof, stress is not concentrated inside each bending portion 3a, 3b during bending forming, so that when bending the lead 3 It is possible to reliably prevent the lead 3 from being deformed or damaged during product selection or transportation.
（２）．前記した（１）の効果により、リード３の径や
リード３のピン間隔の縮小化を図ることができる。(2). Due to the effect (1) described above, the diameter of the lead 3 and the pin interval of the lead 3 can be reduced.
（３）．前記した（１）のように、各屈曲部3a,3bの内
側に応力が集中されないので、リード３の折り曲げ成形
の容易化を図ることができる。(3). As described in (1) above, since stress is not concentrated inside the bent portions 3a and 3b, the lead 3 can be easily bent.
（４）．前記した（３）の効果により、リード３の折り
曲げ成形時に起因するパッケージ２のクラックを確実に
防止することができる。(4). Due to the effect of (3) described above, it is possible to reliably prevent cracks in the package 2 caused by bending and forming the leads 3.
（５）．リード３の先端部3cは、基板の接合面側の幅が
反対側の幅より狭幅に形成されていることにより、はん
だ等の接合材がリード３の斜辺下側とその部位の基板に
十分添付されるので、基板のリード３の接合面側のスペ
ースを狭小させることなく、リード３と基板との接合部
の強度を高めることができる。(5). Since the tip 3c of the lead 3 is formed so that the width on the bonding surface side of the board is narrower than the width on the opposite side, a bonding material such as solder is sufficient on the lower side of the hypotenuse of the lead 3 and the board at that portion. Since it is attached, the strength of the joint between the lead 3 and the substrate can be increased without narrowing the space on the joint surface side of the lead 3 of the substrate.
（６）．前記した（１）と（４）と（５）の効果によ
り、半導体装置の信頼性の向上を図ることができる。(6). Due to the effects of (1), (4) and (5) described above, the reliability of the semiconductor device can be improved.
以上、本発明者によってなされた発明を実施例に基づ
き具体的に説明したが、本発明は前記実施例に限定され
るものではなく、その要旨を逸脱しない範囲で種々変更
可能であることはいうまでもない。Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments, and various modifications can be made without departing from the scope of the invention. There is no end.
たとえば、本実施例においてはワイヤボンディング方
式によるプラスチック形フラットパッケージ構造の半導
体装置について本発明を適用したが、本発明においては
そのような半導体装置の適用に限定されるものではな
く、たとえばテープキャリア形パッケージ構造やセラミ
ック形パッケージ構造の半導体装置について適用するこ
とが可能である。For example, although the present invention is applied to the semiconductor device of the plastic type flat package structure by the wire bonding method in the present embodiment, the present invention is not limited to the application of such a semiconductor device, and is, for example, a tape carrier type. It can be applied to a semiconductor device having a package structure or a ceramic type package structure.
また、本実施例においてはリード３の屈曲部3a,3bお
よび先端部3cの断面形状を等脚台形状とすることによ
り、各図における上下側の幅を夫々所定に異ならした
が、本発明においてはそのような台形状の断面形状に限
定されるものではなく、各幅が異なるものであれば良
い。Further, in the present embodiment, by making the cross-sectional shapes of the bent portions 3a, 3b and the tip end portion 3c of the lead 3 into an isosceles trapezoidal shape, the upper and lower widths in each drawing are made different from each other by a predetermined value. Is not limited to such a trapezoidal cross-sectional shape, as long as each width is different.
更に、本実施例においてリード３の屈曲部3a,3bは、
パッケージ２の外部に形成される構造とされているが、
本発明においてはそのような屈曲部3a,3bの双方ないし
一方がパッケージ２内に形成されている場合であっても
良い。Furthermore, in this embodiment, the bent portions 3a and 3b of the lead 3 are
Although the structure is formed outside the package 2,
In the present invention, both or one of the bent portions 3a and 3b may be formed in the package 2.
本願において開示される発明のうち代表的なものによ
って得られる効果を簡単に説明すれば、次の通りであ
る。The following is a brief description of an effect obtained by the representative one of the inventions disclosed in the present application.
すなわち、各屈曲部は夫々の内側が外側より狭幅に形
成されていることにより、各屈曲部の内側にその成形時
の応力が集中するのを緩和することができるので、該応
力集中に起因するリードの変形ないし破損を確実に防止
することができ、半導体装置の信頼性の向上を図ること
ができる。That is, since each bent portion is formed so that the inner side of each bent portion is narrower than the outer side thereof, it is possible to relieve the concentration of stress during molding of the bent portion inside the bent portion. It is possible to surely prevent the lead from being deformed or damaged, and it is possible to improve the reliability of the semiconductor device.
第１図は本発明の一実施例である半導体装置を示す断面
図、 第２図は第１図のII−II線における拡大断面図、 第３図は第１図のIII−III線における拡大断面図、 第４図は第１図のIV−IV線における拡大断面図である。 １……半導体装置、２……パッケージ、３……リード、
3a,3b……屈曲部、3c……先端部、４……半導体ペレッ
ト、５……タブ、６……ワイヤ。1 is a sectional view showing a semiconductor device according to an embodiment of the present invention, FIG. 2 is an enlarged sectional view taken along line II-II of FIG. 1, and FIG. 3 is an enlarged view taken along line III-III of FIG. A sectional view, FIG. 4 is an enlarged sectional view taken along the line IV-IV in FIG. 1 ... Semiconductor device, 2 ... Package, 3 ... Lead,
3a, 3b ... Bent part, 3c ... tip part, 4 ... semiconductor pellet, 5 ... tab, 6 ... wire.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 田中 英樹 東京都小平市上水本町1450番地 株式会 社日立製作所武蔵工場内 (72)発明者 堀口 一寿 北海道亀田郡七飯町字中島145番地 日 立北海セミコンダクタ株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hideki Tanaka 1450, Kamimizumoto-cho, Kodaira-shi, Tokyo Inside Musashi Plant, Hitachi Ltd. (72) Inventor, Kazutoshi Horiguchi 145 Nakajima, Nanae-cho, Kameda-gun, Hokkaido Inside North Sea Semiconductor Co., Ltd.
Claims (3)
該リードの屈曲部の内側が該リードの表裏側に夫々位置
される半導体装置であって、前記リードの屈曲部の内側
の幅が該屈曲部の外側の幅より狭幅に形成されているこ
とを特徴とする半導体装置。1. A lead having a plurality of bent portions is formed,
A semiconductor device in which the inside of the bent portion of the lead is located on the front and back sides of the lead, respectively, and the width of the inside of the bent portion of the lead is formed to be narrower than the width of the outside of the bent portion. A semiconductor device characterized by:
互いに上下逆方向の略台形状に形成されていることを特
徴とする請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein each of the bent portions of the lead is formed in a substantially trapezoidal shape in which respective cross-sectional shapes are upside down.
に、前記リードの屈曲部が夫々形成されていることを特
徴とする請求項１記載の半導体装置。3. The semiconductor device according to claim 1, wherein the bent portions of the leads are respectively formed outside the package from which the leads are projected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63010732A JP2528925B2 (en) | 1988-01-22 | 1988-01-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63010732A JP2528925B2 (en) | 1988-01-22 | 1988-01-22 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01187843A JPH01187843A (en) | 1989-07-27 |
| JP2528925B2 true JP2528925B2 (en) | 1996-08-28 |
Family
ID=11758466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63010732A Expired - Fee Related JP2528925B2 (en) | 1988-01-22 | 1988-01-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2528925B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196603A (en) * | 1992-12-23 | 1994-07-15 | Shinko Electric Ind Co Ltd | Manufacture of lead frame |
| JPH08102517A (en) * | 1994-09-30 | 1996-04-16 | Nec Corp | Semiconductor device and lead frame |
-
1988
- 1988-01-22 JP JP63010732A patent/JP2528925B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01187843A (en) | 1989-07-27 |
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