JP2527666Y2 - イオン注入装置 - Google Patents
イオン注入装置Info
- Publication number
- JP2527666Y2 JP2527666Y2 JP1990046338U JP4633890U JP2527666Y2 JP 2527666 Y2 JP2527666 Y2 JP 2527666Y2 JP 1990046338 U JP1990046338 U JP 1990046338U JP 4633890 U JP4633890 U JP 4633890U JP 2527666 Y2 JP2527666 Y2 JP 2527666Y2
- Authority
- JP
- Japan
- Prior art keywords
- liner
- target chamber
- ions
- faraday cage
- suppressor electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002184 metal Substances 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 33
- 238000005468 ion implantation Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- 238000012423 maintenance Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990046338U JP2527666Y2 (ja) | 1990-04-27 | 1990-04-27 | イオン注入装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990046338U JP2527666Y2 (ja) | 1990-04-27 | 1990-04-27 | イオン注入装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH047653U JPH047653U (enrdf_load_stackoverflow) | 1992-01-23 |
| JP2527666Y2 true JP2527666Y2 (ja) | 1997-03-05 |
Family
ID=31561335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990046338U Expired - Lifetime JP2527666Y2 (ja) | 1990-04-27 | 1990-04-27 | イオン注入装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2527666Y2 (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55158890A (en) * | 1979-05-28 | 1980-12-10 | Daihen Corp | Electric-charged particle beam processing device |
| JPS5826441A (ja) * | 1981-08-10 | 1983-02-16 | Nippon Telegr & Teleph Corp <Ntt> | イオン注入装置 |
-
1990
- 1990-04-27 JP JP1990046338U patent/JP2527666Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH047653U (enrdf_load_stackoverflow) | 1992-01-23 |
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