JP2523856Y2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2523856Y2 JP2523856Y2 JP1989089491U JP8949189U JP2523856Y2 JP 2523856 Y2 JP2523856 Y2 JP 2523856Y2 JP 1989089491 U JP1989089491 U JP 1989089491U JP 8949189 U JP8949189 U JP 8949189U JP 2523856 Y2 JP2523856 Y2 JP 2523856Y2
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- length
- semiconductor device
- bent
- bent portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
【考案の詳細な説明】 〈産業上の利用分野〉 本考案は、トリミング抵抗とヒューズとを備えたトリ
ミング機能付の半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a semiconductor device having a trimming function provided with a trimming resistor and a fuse.
〈従来の技術〉 従来例によるヒューズ部形状を第４図及び第５図に示
す。第４図は従来例によるヒューズ部形状を示す平面図
である。同図において、電流印加用のパッド2,2間に電
流を流して、溶断部１のヒューズを溶断しトリミングを
行っていた。第５図は、第４図のA-A′断面図である。
同図において、３は半導体基板、4,6は絶縁膜、５はヒ
ューズである。<Prior Art> FIGS. 4 and 5 show a fuse section shape according to a conventional example. FIG. 4 is a plan view showing a fuse section shape according to a conventional example. In the figure, a current is applied between the current application pads 2 and 2 to blow the fuse of the fusing section 1 and perform trimming. FIG. 5 is a sectional view taken along the line AA 'of FIG.
In the figure, 3 is a semiconductor substrate, 4 and 6 are insulating films, and 5 is a fuse.
〈考案が解決しようとする課題〉 ヒューズを溶断する際に必要な電流値は、溶断を行う
テストプローブの寿命の点から、なるべく小さい方が望
ましい。溶断に必要な電流は、ヒューズ部分での発熱と
放熱のバランスで決まるが、第４図及び第５図に示すよ
うなヒューズにおいては、ヒューズ部分１の長さＬが短
いほど、パッド部２への放熱が大きく、溶断に必要な電
流値も大きくなる。即ち、溶断に必要な電流値を小さく
するには、ヒューズ部分１の長さＬを長くすることが有
効であるが、逆にＬを長くしすぎると溶断が発生する位
置がバラつき、ヒューズ部分１周辺部への素子特性への
影響がバラつくという問題や、ヒューズ部分１の占有面
積が大きくなるといった問題が生じる。<Problem to be Solved by the Invention> It is desirable that the current value required to blow a fuse be as small as possible from the viewpoint of the life of a test probe that blows the fuse. The current required for fusing is determined by the balance between heat generation and heat radiation in the fuse portion. In a fuse as shown in FIGS. 4 and 5, the shorter the length L of the fuse portion 1 is, the larger the current flowing to the pad portion 2 is. And the current value required for fusing increases. That is, in order to reduce the current value required for fusing, it is effective to increase the length L of the fuse portion 1. Conversely, if the length L is too long, the position at which fusing occurs varies, and the fuse portion 1 There is a problem that the influence on the element characteristics in the peripheral portion varies, and a problem that the occupation area of the fuse portion 1 increases.
本考案は、上記の問題点を解決するためになされたも
のであり、できるだけ小さい電流値で安定して溶断で
き、かつ占有面積の小さなヒューズを有するトリミング
機能付の半導体装置を提供することを目的としている。The present invention has been made to solve the above problems, and has as its object to provide a semiconductor device with a trimming function having a fuse that can stably blow with a current value as small as possible and has a small occupation area. And
〈課題を解決するための手段〉 上記目的を達成するため本考案は、トリミング抵抗と
ヒューズとを備え、前記ヒューズが電流印加用の２つの
パッド間に設けられてなるトリミング機能付の半導体装
置において、前記ヒューズは直線部と折れ曲がり部とか
らなる一定範囲の長さを有する蛇行形状に形成されると
ともに、前記折れ曲がり部において前記ヒューズはその
外周及び内周ともに曲面状に曲げられており、前記一定
範囲の長さは前記ヒューズの溶断に要する電流値が最低
となる長さ以上で、且つ、前記ヒューズの溶断箇所にば
らつきが生じない長さ以下であることを特徴とする。<Means for Solving the Problems> In order to achieve the above object, the present invention provides a semiconductor device having a trimming function including a trimming resistor and a fuse, wherein the fuse is provided between two pads for applying current. The fuse is formed in a meandering shape having a fixed range of length including a straight portion and a bent portion, and the fuse is bent in a curved shape at both the outer periphery and the inner periphery at the bent portion. The length of the range is not less than the length at which the current value required for blowing the fuse is minimum, and is not more than the length at which there is no variation in the fusing location of the fuse.
また、トリミング抵抗とヒューズとを備え、前記ヒュ
ーズが電流印加用の２つのパッド間に設けられてなるト
リミング機能付の半導体装置において、前記ヒューズは
直線部と折れ曲がり部とからなる一定範囲の長さを有す
る蛇行形状に形成されるとともに、前記折れ曲がり部に
おいて前記ヒューズはその外周及び内周ともに曲面状に
曲げられており、且つ前記折れ曲がり部の幅が前記直線
部よりも広くされており、前記一定範囲の長さは前記ヒ
ューズの溶断に要する電流値が最低となる長さ以上であ
ることを特徴とする。Further, in a semiconductor device having a trimming function provided with a trimming resistor and a fuse, wherein the fuse is provided between two pads for applying a current, the fuse has a length within a predetermined range including a straight portion and a bent portion. The fuse is bent in a curved shape on both the outer periphery and the inner periphery in the bent portion, and the width of the bent portion is wider than the straight portion, and The length of the range is not less than the length at which the current value required for blowing the fuse is minimum.
〈作用〉 本考案の請求項１によるヒューズは、一定範囲内の長
さであり、上記範囲は、上記ヒューズの溶断に要する電
流値が最低となる長さ以上で、且つ、上記ヒューズの溶
断箇所にバラつきが生じない長さ以下であるので、小電
流での溶断が可能であり。また、その溶断箇所もばらつ
かない。また、上記ヒューズは蛇行形状に形成されてい
るので、上記ヒューズによる占有面積が小さくなる。<Function> The fuse according to claim 1 of the present invention has a length within a certain range, and the range is equal to or longer than a length at which a current value required for blowing the fuse is the minimum, and at a location where the fuse is blown. Since the length is less than the length at which no variation occurs, fusing with a small current is possible. Further, the fusing point does not vary. Further, since the fuse is formed in a meandering shape, the area occupied by the fuse is reduced.
請求項２によるヒューズの長さも、上記ヒューズの溶
断に要する電流値が最低となる長さ以上であるので、小
電流での溶断が可能である。また、請求項２において
は、折れ曲がり部の幅を直線部の幅よりも広くしている
ので、溶断は直線部で生じることになり、溶断箇所のば
らつきを小さく抑えることができる。また、この構成に
おいてもヒューズは蛇行形状に形成されており、やはり
ヒューズによる占有面積を小さくできる。The length of the fuse according to the second aspect is also equal to or greater than the length at which the current value required for blowing the fuse is minimum, so that the fuse can be blown with a small current. Further, in the second aspect, since the width of the bent portion is wider than the width of the straight portion, the fusing occurs at the straight portion, and the variation of the fusing portion can be suppressed to be small. Also in this configuration, the fuse is formed in a meandering shape, and the area occupied by the fuse can be reduced.
〈実施例〉 本考案は、集積回路の回路定数調整あるいは上長回路
切換等を行う場合に使用するトリミング機能付の半導体
装置に関するものであり、特に配線材料（A1,Poly−Si
etc）を用いて形成したヒューズを大電流で溶断するよ
うなトリミング機能付の半導体装置に関するものであ
る。<Embodiment> The present invention relates to a semiconductor device with a trimming function used for adjusting the circuit constant of an integrated circuit or switching an upper circuit, and particularly relates to a wiring material (A1, Poly-Si).
The present invention relates to a semiconductor device having a trimming function that blows a fuse formed by using (etc) with a large current.
本考案の一実施例を第１図及び第３図に従って説明す
る。第３図に示すように、ヒューズの長さを長くしてい
くと、溶断時に必要な電流値は減少していくが、ある長
さ１に到達するとそれ以上長くしても電流値は変わらな
くなる。また、１′以下の長さでは、ヒューズの中心部
で溶断が起こり、その位置はバラつかない。即ち、ヒュ
ーズの長さを１から１′の間に設定すれば、十分小さな
電流値で溶断でき、かつ溶断位置のバラつかないトリミ
ング装置が得られる。One embodiment of the present invention will be described with reference to FIGS. As shown in FIG. 3, as the length of the fuse is increased, the current value required at the time of fusing decreases, but when a certain length 1 is reached, the current value does not change even if it is longer. . If the length is 1 'or less, the fuse is blown at the center of the fuse and its position does not vary. That is, if the length of the fuse is set between 1 and 1 ', a trimming device that can be blown with a sufficiently small current value and that does not vary in the blown position can be obtained.
しかし、1,1′は通常数百μｍとなるため、第４図の
ようにヒューズ部分１を直線状にしたままではヒューズ
部分１の占有面積が非常に大きくなってしまう。そこで
第１図に示すように、ヒューズ部分１をパッド2,2間に
蛇行させて形成することにより、占有面積が小さいまま
でヒューズ部分１の長さを長くしたトリミング装置が得
られる。この蛇行形状は第１図に示すように、直線部11
と折り曲げ部12から構成されており、折り曲げ部12はそ
の折り曲げの外周Ｂ部、内周Ｃ部とも曲面となってい
る。However, since 1,1 'is usually several hundred .mu.m, the area occupied by the fuse portion 1 becomes very large if the fuse portion 1 is kept straight as shown in FIG. Therefore, as shown in FIG. 1, by forming the fuse portion 1 so as to meander between the pads 2 and 2, a trimming device in which the length of the fuse portion 1 is increased while the occupied area is small can be obtained. This meandering shape is, as shown in FIG.
And a bent portion 12. The bent portion 12 has curved surfaces at both the outer periphery B portion and the inner periphery C portion of the bent portion.
定量的な具体例を示すと、例えば、ヒューズの長さが
300μｍ必要な場合、最小配線幅10μｍ、最小配線間隔1
0μｍのデザインルールで第１図の実施例に基づきヒュ
ーズ部分１を設計すると、パッド2,2間の間隔は70μｍ
で済むことになり、直線状のヒューズとした場合に比べ
大幅に占有面積を低減できる。しかも、上記のように、
ヒューズ部分１の長さは、1,1′間にあるため、溶断に
必要な電流値も小さく、また、溶断位置もバラつかな
い。To give a concrete example, for example, the length of a fuse
When 300μm is required, minimum wiring width 10μm, minimum wiring spacing 1
When the fuse portion 1 is designed based on the design rule of 0 μm based on the embodiment of FIG. 1, the interval between the pads 2 is 70 μm.
Thus, the occupied area can be greatly reduced as compared with the case where a linear fuse is used. And as mentioned above,
Since the length of the fuse portion 1 is between 1,1 ', the current value required for fusing is small, and the fusing position does not vary.
第２図は、本考案による他の実施例を示した図であ
る。同図における実施例のヒューズ部分１の長さ及びヒ
ューズ部分１の蛇行形状は、上記第１図の実施例と同一
である。但し、第２図の実施例においては、ヒューズ部
分１の直線部11の幅W1よりも折り曲げ部12の幅W2を広く
している。この構造によって、直線部11は溶断部、折り
曲げ部は溶断しない非溶断部となる。つまり、溶断のお
こる箇所を限定でき、溶断位置のばらつきを低減でき
る。FIG. 2 is a diagram showing another embodiment according to the present invention. The length of the fuse portion 1 and the meandering shape of the fuse portion 1 in the embodiment shown in FIG. 3 are the same as those in the embodiment shown in FIG. However, in the embodiment of FIG. 2, and the width W 2 of the bending portion 12 than the width W 1 of the straight portion 11 of the fuse portion 1. With this structure, the straight portion 11 becomes a fusing portion, and the bent portion becomes a non-fusing portion which does not blow. That is, the location where fusing occurs can be limited, and variations in fusing location can be reduced.
なお、本考案は上記実施例に限定されるものではな
く、本考案の範囲内で上記実施例に多くの修正及び変更
を加え得ることは勿論である。It should be noted that the present invention is not limited to the above embodiment, and it is needless to say that many modifications and changes can be made to the above embodiment within the scope of the present invention.
〈考案の効果〉 以上のように本考案によれば、トリミング抵抗とヒュ
ーズとを備えたトリミング機能付の半導体装置におい
て、上記ヒューズを小さな電流値で溶断でき、また、そ
の溶断が起こる位置もバラつかず、しかも上記ヒューズ
の占有面積の小さな半導体装置を実現できる。<Effects of the Invention> As described above, according to the present invention, in a semiconductor device having a trimming function having a trimming resistor and a fuse, the fuse can be blown with a small current value, and the position at which the blow occurs varies. It is possible to realize a semiconductor device in which the fuse occupies a small area.
第１図は本考案一実施例を示すヒューズ部の平面図、第
２図は本考案の他の実施例を示すヒューズ部の平面図、
第３図は本考案の原理を説明するための図、第４図は従
来のヒューズ部を示す平面図、第５図はそのA-A′断面
図である。 １……ヒューズ部分、２……パッド部、11……直線部、
12……折り曲げ部 Ｂ……折り曲げ部の外周、Ｃ……折り曲げ部の内周。FIG. 1 is a plan view of a fuse section showing one embodiment of the present invention, FIG. 2 is a plan view of a fuse section showing another embodiment of the present invention,
FIG. 3 is a view for explaining the principle of the present invention, FIG. 4 is a plan view showing a conventional fuse section, and FIG. 5 is a sectional view taken along the line AA 'of FIG. 1 ... fuse part, 2 ... pad part, 11 ... linear part,
12: Bending portion B: Outer circumference of bending portion, C: Inner circumference of bending portion.
Claims (2)
ヒューズが電流印加用の２つのパッド間に設けられてな
るトリミング機能付の半導体装置において、 前記ヒューズは直線部と折れ曲がり部とからなる一定範
囲の長さを有する蛇行形状に形成されるととともに、前
記折れ曲がり部において前記ヒューズはその外周及び内
周ともに曲面状に曲げられており、前記一定範囲の長さ
は前記ヒューズの溶断に要する電流値が最低となる長さ
以上で、且つ、前記ヒューズの溶断箇所にばらつきが生
じない長さ以下であることを特徴とする半導体装置。1. A semiconductor device having a trimming function, comprising a trimming resistor and a fuse, wherein the fuse is provided between two pads for applying a current, wherein the fuse has a fixed range including a straight portion and a bent portion. Is formed in a meandering shape having a length, and at the bent portion, the fuse is bent in a curved shape on both the outer circumference and the inner circumference, and the length of the predetermined range is a current value required for blowing the fuse. Is a length not less than the minimum length and not more than a length that does not cause a variation in the fused portion of the fuse.
ヒューズが電流印加用の２つのパッド間に設けられてな
るトリミング機能付の半導体装置において、 前記ヒューズは直線部と折れ曲がり部とからなる一定範
囲の長さを有する蛇行形状に形成されるとともに、前記
折れ曲がり部において前記ヒューズはその外周及び内周
ともに曲面状に曲げられており、且つ前記折れ曲がり部
の幅が前記直線部よりも広くされており、前記一定範囲
の長さは前記ヒューズの溶断に要する電流値が最低とな
る長さ以上であることを特徴とする半導体装置。2. A semiconductor device having a trimming function, comprising a trimming resistor and a fuse, wherein the fuse is provided between two pads for applying a current, wherein the fuse has a fixed range including a straight portion and a bent portion. The fuse is formed in a meandering shape having a length of, and at the bent portion, the outer and inner peripheries of the fuse are bent into a curved surface, and the width of the bent portion is wider than that of the linear portion. The semiconductor device according to claim 1, wherein the length of the predetermined range is equal to or longer than a length at which a current value required for blowing the fuse is minimum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989089491U JP2523856Y2 (en) | 1989-07-28 | 1989-07-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989089491U JP2523856Y2 (en) | 1989-07-28 | 1989-07-28 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0328737U JPH0328737U (en) | 1991-03-22 |
| JP2523856Y2 true JP2523856Y2 (en) | 1997-01-29 |
Family
ID=31639067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989089491U Expired - Fee Related JP2523856Y2 (en) | 1989-07-28 | 1989-07-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2523856Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6133054A (en) * | 1999-08-02 | 2000-10-17 | Motorola, Inc. | Method and apparatus for testing an integrated circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60954B2 (en) * | 1980-12-19 | 1985-01-11 | セイコーインスツルメンツ株式会社 | Polycrystalline silicon fuse memory and its manufacturing method |
| JPS61147548A (en) * | 1984-12-21 | 1986-07-05 | Nec Ic Microcomput Syst Ltd | Semiconductor integrated circuit device |
-
1989
- 1989-07-28 JP JP1989089491U patent/JP2523856Y2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0328737U (en) | 1991-03-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |