JP2517968B2 - Printing method - Google Patents
Printing methodInfo
- Publication number
- JP2517968B2 JP2517968B2 JP62141264A JP14126487A JP2517968B2 JP 2517968 B2 JP2517968 B2 JP 2517968B2 JP 62141264 A JP62141264 A JP 62141264A JP 14126487 A JP14126487 A JP 14126487A JP 2517968 B2 JP2517968 B2 JP 2517968B2
- Authority
- JP
- Japan
- Prior art keywords
- printing
- intaglio
- film
- printed
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Printing Methods (AREA)
- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は例えば半導体集積回路素子の表面に樹脂より
なる保護膜を印刷形成するに適用して好適な印刷方法に
関する。The present invention relates to a printing method suitable for application to print formation of a protective film made of resin on the surface of a semiconductor integrated circuit device, for example.
本発明は凹版と被印刷物とを密着させて凹版の凹部に
充填した印刷液を被印刷物に転移させる様にした印刷方
法、いわゆる凹版印刷方法において、凹版と被印刷物と
を密着させた後、凹部内の印刷液に転移方向の遠心力を
与えることにより、被印刷物を大きな圧力で凹版に押し
付けて、この被印刷物を凹部内に撓ませなくても、凹部
内の印刷液を被印刷物に転移できる様にし、金属、セラ
ミック等、硬いものに対する凹版印刷、或いは大きな圧
力を加えることができないものに対する凹版印刷を可能
にし、例えば半導体集積回路素子に形成される樹脂より
なる保護膜を凹版印刷により行うことができる様にし、
半導体集積回路装置の製造工程数を大幅に低減すること
ができる様にしたものである。The present invention is a printing method in which an intaglio plate and an object to be printed are brought into close contact with each other to transfer the printing liquid filled in the recesses of the intaglio plate to the object to be printed, in a so-called intaglio printing method, after the intaglio plate and the object to be printed are closely contacted, By applying a centrifugal force in the transfer direction to the printing liquid inside, the printing liquid in the recess can be transferred to the printing target without pressing the printing target against the intaglio plate with a large pressure and bending the printing target in the recess. In this way, it is possible to perform intaglio printing on a hard material such as metal or ceramic, or intaglio printing on a material to which a large pressure cannot be applied. For example, a protective film made of a resin formed on a semiconductor integrated circuit element can be applied by intaglio printing. So that you can
The number of manufacturing steps of a semiconductor integrated circuit device can be significantly reduced.
一般に凹版印刷方法による印刷は、凹版の表面に印刷
パターンをなく凹部を形成し、この凹部に印刷液を充填
した後、この凹版に被印刷物を押し付けて被印刷物を凹
部内に撓ませ、このときの圧力によって凹部内の印刷液
を被印刷物に転移することにより行われる。Generally, the printing by the intaglio printing method forms a recess on the surface of the intaglio without forming a printing pattern, fills the recess with a printing liquid, and then presses the material to be printed against the intaglio plate to bend the material to be recessed, It is performed by transferring the printing liquid in the concave portion to the printing object by the pressure of.
しかしながら、斯る従来の凹版印刷方法においては、
被印刷物を凹部内に撓ませる必要があり、このため大き
な圧力を発生させる装置を必要とすると共に、また被印
刷物が紙、フィルム等の軟らかいものに限られてしま
い、金属、セラミックス等、硬いものに対しては凹版印
刷を行うことができないという不都合があった。However, in such a conventional intaglio printing method,
It is necessary to bend the material to be printed into the concave portion, which requires a device that generates a large pressure, and the material to be printed is limited to soft materials such as paper and film, and hard materials such as metal and ceramics. However, there is a disadvantage that intaglio printing cannot be performed.
ところで、また第３図に示す様に、半導体集積回路素
子（１）をエポキシ樹脂（２）でモールドしてなる半導
体集積回路装置においては、近年、オーバーコート膜を
なすSi3N4膜（３）上にポリイミド樹脂膜（４）を設け
る様にされている。このポリイミド樹脂膜（４）は、斯
る半導体集積回路装置の製造工程である半導体ウエハー
の裏面研摩、分割、分割後のボンディング、モールドの
各工程でオーバーコート膜をなすSi3N4膜（３）にクラ
ックが入らない様にこのSi3N4膜（３）を保護し、クラ
ックから入り込む水分によって配線層（５）が腐蝕しな
い様にすると共に、エポキシ樹脂（２）のフィラに含有
されるウラン、トリウム等より発生するα線から半導体
集積回路素子（１）を保護し、ソフトエラーが生じない
様にするために設けられるものである。尚、この第３図
において、（６）はSiO2層、（７）は接着剤、（８）は
リードフレーム、（９）はリードフレームのリード、
（10）は金線である。Incidentally, as shown in FIG. 3, in a semiconductor integrated circuit device formed by molding a semiconductor integrated circuit element (1) with an epoxy resin (2), in recent years, an Si 3 N 4 film (3 ), A polyimide resin film (4) is provided thereon. This polyimide resin film (4) is an Si 3 N 4 film (3) that forms an overcoat film in each step of back surface polishing, division, bonding after division, and molding of a semiconductor wafer which is a manufacturing process of such a semiconductor integrated circuit device. ) Protects the Si 3 N 4 film (3) from being cracked so that the wiring layer (5) is not corroded by the water entering from the crack and is contained in the filler of the epoxy resin (2). It is provided in order to protect the semiconductor integrated circuit element (1) from α rays generated from uranium, thorium, etc. so that a soft error does not occur. In FIG. 3, (6) is a SiO 2 layer, (7) is an adhesive agent, (8) is a lead frame, (9) is a lead frame lead,
(10) is a gold wire.
ここに従来、斯るポリイミド樹脂膜（４）を形成する
方法としては、いわゆるスピンコート法が用いられてい
る。しかしながら、このスピンコート法によるときは、
全面にポリイミド樹脂膜を形成した後、このポリイミド
樹脂膜上にレジストを被着し、その後、このレジストを
所定のパターンに形成した後、このレジストをマスクと
してポリイミド樹脂膜を選択的にエッチングし、ボンデ
ィングパッド（5A）上のポリイミド樹脂を除去しなけれ
ばならないという複雑な工程を必要としていた。そこ
で、この場合、凹版印刷方法を使用して、一回の印刷工
程で所望のパターンを有するポリイミド樹脂膜（４）を
形成する様にすることが考えられる。しかしながら、従
来の凹版印刷方法では、半導体集積回路素子（１）を大
きな圧力で凹版ち押し付ける必要があるため、半導体集
積回路素子（１）を破損してしまう場合があるという不
都合があった。Heretofore, a so-called spin coating method has heretofore been used as a method for forming such a polyimide resin film (4). However, when using this spin coating method,
After forming a polyimide resin film on the entire surface, a resist is deposited on the polyimide resin film, then, after forming this resist in a predetermined pattern, the polyimide resin film is selectively etched using this resist as a mask, It required a complicated process of removing the polyimide resin on the bonding pad (5A). Therefore, in this case, it is considered that the intaglio printing method is used to form the polyimide resin film (4) having a desired pattern in one printing step. However, the conventional intaglio printing method has a disadvantage that the semiconductor integrated circuit element (1) may be damaged because the semiconductor integrated circuit element (1) needs to be pressed and pressed with a large pressure.
本発明は、斯る点に鑑み、金属、セラミックス等の硬
いもの、或いは大きな圧力を加えることができないもの
に対しても凹版印刷を行うことができる様にした印刷方
法を提供することを目的とする。In view of the above point, the present invention has an object to provide a printing method capable of performing intaglio printing even on a hard material such as metal or ceramics or a material to which a large pressure cannot be applied. To do.
本発明に依る印刷方法は、例えば第１図に示す様に凹
版（11）と被印刷物（12）とを密着させて凹版（11）の
凹部（13）に充填した印刷液（14）を被印刷物（12）に
転移させる様にした印刷方法において、凹版（11）と被
印刷物（12）とを密着させた後、凹部（13）内の印刷液
（14）に転移方向の遠心力を与える様にしたものであ
る。In the printing method according to the present invention, for example, as shown in FIG. 1, the intaglio (11) and the object to be printed (12) are brought into close contact with each other and the printing liquid (14) filled in the recess (13) of the intaglio (11) is applied. In the printing method adapted to transfer to the printed matter (12), after the intaglio (11) and the object to be printed (12) are brought into close contact with each other, a centrifugal force in the transfer direction is applied to the printing liquid (14) in the recess (13). It was done like this.
斯る本発明に依れば、凹部（13）内の印刷液（14）に
は転移方向の遠心力が与えられるので、この凹部（13）
内の印刷液（14）はこの遠心力によって転移方向、即ち
被印刷物（12）側に転移するところとなる。このため、
被印刷物（12）を大きな圧力で凹版（11）に押し付け、
この被印刷物（12）を凹部（13）内に撓ませる様にしな
くとも、凹部（13）内の印刷液（14）を被印刷物（12）
に転移させることができる。According to the present invention, since the centrifugal force in the transfer direction is applied to the printing liquid (14) in the recess (13), the recess (13)
The printing liquid (14) therein is transferred to the transfer direction, that is, to the printing object (12) side by this centrifugal force. For this reason,
Press the object to be printed (12) against the intaglio plate (11) with great pressure,
Even if the printed material (12) is not bent in the concave portion (13), the printing liquid (14) in the concave portion (13) is applied to the printed material (12).
Can be transferred to.
以下、第１図〜第３図を参照して本発明印刷方法の一
実施例につき、半導体集積回路素子の表面にポリイミド
樹脂よりなる保護膜を印刷形成する場合を例にして説明
しよう。Hereinafter, one embodiment of the printing method of the present invention will be described with reference to FIGS. 1 to 3 by taking as an example the case where a protective film made of a polyimide resin is formed by printing on the surface of a semiconductor integrated circuit element.
先ず本例においては、第１図に示す様に矢印Ａの方向
に回転し得る回転軸（15）に同形の４個の印刷室体（1
6）を90度間隔をもって固定して成る印刷装置を用意す
る。この場合、印刷室体（16）は中空の五角柱体により
構成し、その頂稜部（17）を回転軸（15）の軸方向の一
致させて回転軸（15）に固定し、頂稜部（17）に対向す
る面（以下、底面部という）（18）が回転軸（15）の半
径方向と直交する様になる。また印刷室体（16）の底面
部（18）の内側に位置決め部材（19）を設けると共に更
にこの位置決め部材（19）上に支持部材（20）を設け、
後述する半導体ウエハー（12）と凹版（11）とをこの底
面部（18）の内側に位置決めし、重畳して固定できる様
にする。First, in this example, as shown in FIG. 1, four printing chamber members (1) having the same shape as the rotating shaft (15) that can rotate in the direction of arrow A are used.
Prepare a printing device consisting of 6) fixed at 90 degree intervals. In this case, the printing chamber body (16) is composed of a hollow pentagonal prism body, and the apex edge portion (17) is fixed to the rotating shaft (15) by making the axial direction of the rotating shaft (15) coincide. A surface (hereinafter referred to as a bottom surface portion) (18) facing the portion (17) is orthogonal to the radial direction of the rotation shaft (15). Further, a positioning member (19) is provided inside the bottom surface portion (18) of the printing chamber body (16), and a supporting member (20) is further provided on the positioning member (19).
A semiconductor wafer (12) and an intaglio plate (11), which will be described later, are positioned inside the bottom surface portion (18) so that they can be fixed by overlapping.
また本例においては、被印刷物として半導体ウエハー
（12）を用意する。この場合、この半導体ウエーハ（1
2）には予め各チップ部分（12A）ごとに必要な回路素子
を形成し、表面全体にオーバーコート膜をなすSi3N4膜
を形成しておく。In addition, in this example, a semiconductor wafer (12) is prepared as an object to be printed. In this case, this semiconductor wafer (1
In 2), necessary circuit elements are formed in advance for each chip portion (12A), and a Si 3 N 4 film forming an overcoat film is formed on the entire surface.
また本例においては、印刷原版として凹版（11）を用
意する。この場合、凹版（11）には半導体ウエーハ（1
2）の各チップ部分（12A）に対応した所定パターンの凹
部（13）を設け、この凹部（13）に印刷液としてポリイ
ミド樹脂をＮ−メチル−２−ピロリドンに溶解してなる
保護膜材（14）を充填する。In this example, an intaglio plate (11) is prepared as a printing original plate. In this case, a semiconductor wafer (1
A concave portion (13) having a predetermined pattern corresponding to each chip portion (12A) of 2) is provided, and a protective film material obtained by dissolving a polyimide resin in N-methyl-2-pyrrolidone as a printing liquid in the concave portion (13) ( 14) is filled.
そこで本例においては、第１図に示す様に印刷装置の
印刷室（16）の底面部（18）に半導体ウエーハ（12）と
凹版（11）とを半導体ウエーハ（12）の表面と凹版（1
1）の凹部形成面とが密着する様に重畳して固定し、続
いて回転軸（15）を矢印Ａの方向に回転させる。Therefore, in this example, as shown in FIG. 1, the semiconductor wafer (12) and the intaglio plate (11) are provided on the bottom surface (18) of the printing chamber (16) of the printing apparatus and the surface of the semiconductor wafer (12) and the intaglio plate (12). 1
It is fixed by superimposing it so that it comes into close contact with the recess forming surface of 1), and then the rotating shaft (15) is rotated in the direction of arrow A.
この様にすると、凹版（11）の凹部（13）に充填した
保護膜材（14）に遠心力が加わり、この保護膜材（14）
は半導体ウエーハ（12）の各チップ部分（12A）の表面
に転移し、各チップ部分（12A）ごとに保護膜材（14）
による層が形成される。By doing so, centrifugal force is applied to the protective film material (14) filled in the concave portion (13) of the intaglio plate (11), and the protective film material (14).
Is transferred to the surface of each chip part (12A) of the semiconductor wafer (12), and a protective film material (14) is provided for each chip part (12A).
A layer is formed.
次に第２図に示す様に半導体ウエーハ（12）を取り出
し保護膜材層を加熱してこの保護膜材層から溶剤である
Ｎ−メチル−２−ピロリドンを蒸発させ、硬化されてな
るポリイミド樹脂膜（４）を形成する。Next, as shown in FIG. 2, the semiconductor wafer (12) is taken out and the protective film material layer is heated to evaporate the solvent N-methyl-2-pyrrolidone from the protective film material layer, and the polyimide resin is cured. Form the film (4).
次に半導体ウエーハ（12）の裏面を研摩した後、第３
図に示すと同様に半導体ウエーハ（12）を各チップ（12
A）毎に分割して半導体集積回路素子（１）を得、この
半導体集積回路素子（１）を接着剤（７）を用いてリー
ドフレーム（８）に固定し、ボンディングパッド（5A）
とリード（９）とを金線（10）で接続し、更にリード
（９）の先端部分を除き全体をエポキシ樹脂（２）によ
ってモールドする。Next, after polishing the back surface of the semiconductor wafer (12),
As shown in the figure, attach the semiconductor wafer (12) to each chip (12
The semiconductor integrated circuit element (1) is obtained by dividing it for each A), and the semiconductor integrated circuit element (1) is fixed to the lead frame (8) with an adhesive (7), and the bonding pad (5A).
The lead (9) and the lead (9) are connected by a gold wire (10), and the whole of the lead (9) except the tip portion is molded with an epoxy resin (2).
この様に本例においては、半導体ウエーハ（12）を裏
面研摩する前に各チップ部分（12A）ごとにその表面に
ポリイミド樹脂膜（４）を設ける様にしているので、半
導体ウエーハ（12）の裏面研摩、分割、分割後のボンデ
ィング、モールドの各工程でオーバーコート膜をなすSi
3N4膜（３）にクラックが入らない様にこのSi3N4膜
（３）を保護し、クラックから入り込む水分によって配
線層（５）が腐蝕しない様にできると共に、エポキシ樹
脂（２）のフィラに含有されるラウン、トリウム等より
発生するα線から半導体集積回路素子（１）を保護し、
ソフトエラーを生じさせない様にすることができる。As described above, in this example, the polyimide resin film (4) is provided on the surface of each chip portion (12A) before the back surface of the semiconductor wafer (12) is polished. Si that forms the overcoat film in each process of backside polishing, dividing, bonding after dividing, and molding
3 N 4 film (3) to protect this the Si 3 N 4 film (3) so as not enter cracks, with the wiring layer due to moisture entering from the crack (5) can be so as not to corrode, epoxy resin (2) Protects the semiconductor integrated circuit element (1) from α rays generated by the runes and thorium contained in the filler of
It is possible to prevent a soft error from occurring.
ここに本例においては、凹版印刷方法を使用ししてポ
リイミド樹脂膜（４）を形成する様にしているが、本例
においては、印刷時、凹版（11）の凹部（14）に充填し
た保護膜材（14）に遠心力を与える様にしているので、
被印刷物たる半導体ウエーハ（12）を大きな圧力で凹版
（11）に押し付けなくとも、保護膜材（14）を良好に半
導体ウエーハ（12）の各チップ部分（12A）の表面に転
移させることができる。Here, in this example, the intaglio printing method is used to form the polyimide resin film (4), but in this example, the concave portion (14) of the intaglio plate (11) was filled at the time of printing. Since the centrifugal force is applied to the protective film material (14),
The protective film material (14) can be satisfactorily transferred to the surface of each chip portion (12A) of the semiconductor wafer (12) without pressing the semiconductor wafer (12) as a material to be printed onto the intaglio plate (11) with a large pressure. .
従って、本例の印刷方法に依れば、半導体ウエーハ
（12）を破損するおそれもなく、一回の印刷工程と一回
の加熱工程とで所望のパターンを有するポリイミド樹脂
膜（４）を形成することができ、スピンコート法によっ
てポリイミド樹脂膜（４）を形成する場合に比し、半導
体集積回路装置の製造工程数を大幅に低減することがで
きるという利益がある。Therefore, according to the printing method of this example, there is no fear of damaging the semiconductor wafer (12), and the polyimide resin film (4) having a desired pattern is formed in one printing step and one heating step. Therefore, there is an advantage that the number of manufacturing steps of the semiconductor integrated circuit device can be significantly reduced as compared with the case where the polyimide resin film (4) is formed by the spin coating method.
尚、上述実施例においては、半導体集積回路素子
（１）上にポリイミド樹脂膜（４）を形成する場合につ
き述べたが、本発明はこの上述実施例に限らず、シリコ
ン樹脂等種々の樹脂による表面保護膜を形成する場合に
も適用でき、この場合にも上述同様の作用効果を得るこ
とができる。In the above-mentioned embodiment, the case where the polyimide resin film (4) is formed on the semiconductor integrated circuit element (1) has been described, but the present invention is not limited to this embodiment, and various resins such as silicone resin may be used. It can also be applied to the case of forming the surface protective film, and in this case, the same effect as the above can be obtained.
また上述実施例においては、Si3N4膜（３）上にポリ
イミド樹脂（４）を形成する場合につき述べたが、本発
明はSi3N4膜（３）を設けず、配線層（５）上に直接ポ
リイミド樹脂膜（４）を形成する場合にも適用でき、こ
の場合にも上述同様の作用効果を得ることができる。In the above embodiment has been described regarding the case of forming a polyimide resin (4) on the Si 3 N 4 film (3), the present invention is not provided with the Si 3 N 4 film (3), the wiring layer (5 It is also applicable to the case where the polyimide resin film (4) is directly formed on the above), and in this case as well, the same effect as described above can be obtained.
また上述実施例においては、半導体集積回路素子
（１）の表面に表面保護膜を形成する場合につき述べた
が、本発明は金属、セラミックス、或いは紙、フィルム
等に印刷を行う場合にも適用でき、この場合にも、上述
同様の作用効果を得ることができる。Further, in the above-mentioned embodiments, the case where the surface protective film is formed on the surface of the semiconductor integrated circuit element (1) has been described, but the present invention can also be applied to the case of printing on metal, ceramics, paper, film or the like. Also in this case, the same effect as described above can be obtained.
また本発明は上述実施例に限らず、本発明の要旨を逸
脱することなく、その他種々の構成が取り得ることは勿
論である。Further, the present invention is not limited to the above-mentioned embodiments, and it goes without saying that various other configurations can be adopted without departing from the gist of the present invention.
本発明に依れば、被印刷物（12）を大きな圧力で凹版
（11）に押し付け、この被印刷物（12）を凹部（13）内
に撓ませなくとも、凹部（13）内の印刷液（14）を被印
刷物（12）に転移させることができる様にされているの
で、紙、フィルム等、軟らかいものに対するほか、金
属、セラミックス等、硬いもの、或いは大きな圧力を加
えることができないものに対しても凹版印刷を行うこと
ができるという利益がある。According to the present invention, the printing liquid (12) in the recess (13) can be pressed without pressing the printing target (12) against the intaglio (11) with a large pressure to bend the printing target (12) into the recess (13). Since it is designed to transfer 14) to the printed material (12), it can be used not only for soft objects such as paper, film, etc., but also for metals, ceramics, etc. that are hard or that cannot apply a large pressure. However, there is an advantage that intaglio printing can be performed.
特に本発明を半導体集積回路素子（１）の表面に樹脂
よりなる保護膜（４）を形成するに適用するときは一回
の印刷工程と一回の加熱工程とで斯る保護膜（４）を形
成することができるので、スピンコート法により斯る保
護膜（４）を形成する場合に比し、半導体集積回路装置
の製造工程数を大幅に低減することができるという利益
がある。Especially when the present invention is applied to the formation of the protective film (4) made of resin on the surface of the semiconductor integrated circuit element (1), the protective film (4) is formed by one printing step and one heating step. Therefore, there is an advantage that the number of manufacturing steps of the semiconductor integrated circuit device can be significantly reduced as compared with the case where the protective film (4) is formed by the spin coating method.
第１図は本発明印刷方法の一実施例に使用する印刷装置
の一例を示す断面図、第２図及び第３図は夫々本発明の
一実施例の説明に供する線図である。 （11）は凹版、（12）は半導体ウエーハ、（13）は凹
部、（14）は保護膜材である。FIG. 1 is a sectional view showing an example of a printing apparatus used in an embodiment of the printing method of the present invention, and FIGS. 2 and 3 are diagrams used for explaining the embodiment of the present invention. (11) is an intaglio, (12) is a semiconductor wafer, (13) is a recess, and (14) is a protective film material.
Claims (1)
凹部に充填した印刷液を上記被印刷物に転移させる様に
した印刷方法において、 上記凹版と上記被印刷物とを密着させた後、上記凹部内
の上記印刷液に転移方向の遠心力を与える様にしたこと
を特徴とする印刷方法。1. A printing method in which an intaglio plate and an object to be printed are brought into close contact with each other to transfer the printing liquid filled in the recesses of the intaglio plate to the object to be printed, after the intaglio plate and the object to be printed are brought into close contact with each other, A printing method, wherein a centrifugal force in a transfer direction is applied to the printing liquid in the recess.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62141264A JP2517968B2 (en) | 1987-06-05 | 1987-06-05 | Printing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62141264A JP2517968B2 (en) | 1987-06-05 | 1987-06-05 | Printing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63306073A JPS63306073A (en) | 1988-12-14 |
| JP2517968B2 true JP2517968B2 (en) | 1996-07-24 |
Family
ID=15287857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62141264A Expired - Fee Related JP2517968B2 (en) | 1987-06-05 | 1987-06-05 | Printing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2517968B2 (en) |
-
1987
- 1987-06-05 JP JP62141264A patent/JP2517968B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63306073A (en) | 1988-12-14 |
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