JP2025518518A - 非正弦波電圧源による基板エッジに対するイオンエネルギー分布制御 - Google Patents

非正弦波電圧源による基板エッジに対するイオンエネルギー分布制御 Download PDF

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Publication number
JP2025518518A
JP2025518518A JP2024568172A JP2024568172A JP2025518518A JP 2025518518 A JP2025518518 A JP 2025518518A JP 2024568172 A JP2024568172 A JP 2024568172A JP 2024568172 A JP2024568172 A JP 2024568172A JP 2025518518 A JP2025518518 A JP 2025518518A
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JP
Japan
Prior art keywords
voltage
edge ring
substrate
bias
waveform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024568172A
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English (en)
Japanese (ja)
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JP2025518518A5 (enExample
Inventor
チョイ・ミョン・ヨル
ウー・イン
マーティン・マイケル・ジョン
パターソン・アレクサンダー・ミラー
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Lam Research Corp
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Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2025518518A publication Critical patent/JP2025518518A/ja
Publication of JP2025518518A5 publication Critical patent/JP2025518518A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2024568172A 2022-05-17 2023-05-16 非正弦波電圧源による基板エッジに対するイオンエネルギー分布制御 Pending JP2025518518A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263343082P 2022-05-17 2022-05-17
US63/343,082 2022-05-17
PCT/US2023/022436 WO2023225033A1 (en) 2022-05-17 2023-05-16 Ion energy distribution control over substrate edge with non-sinusoidal voltage source

Publications (2)

Publication Number Publication Date
JP2025518518A true JP2025518518A (ja) 2025-06-17
JP2025518518A5 JP2025518518A5 (enExample) 2026-05-21

Family

ID=88836035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024568172A Pending JP2025518518A (ja) 2022-05-17 2023-05-16 非正弦波電圧源による基板エッジに対するイオンエネルギー分布制御

Country Status (6)

Country Link
US (1) US20250323018A1 (enExample)
JP (1) JP2025518518A (enExample)
KR (1) KR20250010069A (enExample)
CN (1) CN119213527A (enExample)
TW (1) TW202410126A (enExample)
WO (1) WO2023225033A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025187456A1 (ja) * 2024-03-07 2025-09-12 東京エレクトロン株式会社 プラズマ処理装置、バイアス電源システム、及びプラズマ処理方法
US20250364211A1 (en) * 2024-05-24 2025-11-27 Tokyo Electron Limited System and method for plasma process
CN119517722B (zh) * 2025-01-21 2025-05-13 中微半导体设备(上海)股份有限公司 一种下电极组件、等离子体处理设备及其电压控制方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100782370B1 (ko) * 2006-08-04 2007-12-07 삼성전자주식회사 지연 전기장을 이용한 이온 에너지 분포 분석기에 근거한이온 분석 시스템
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
JP2018006299A (ja) * 2016-07-08 2018-01-11 東芝メモリ株式会社 プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法
US11955314B2 (en) * 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
US11848176B2 (en) * 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power

Also Published As

Publication number Publication date
US20250323018A1 (en) 2025-10-16
CN119213527A (zh) 2024-12-27
KR20250010069A (ko) 2025-01-20
WO2023225033A1 (en) 2023-11-23
TW202410126A (zh) 2024-03-01

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