KR20250010069A - 비정현파 전압 소스를 사용한 기판 에지에 대한 이온 에너지 분배 제어 - Google Patents

비정현파 전압 소스를 사용한 기판 에지에 대한 이온 에너지 분배 제어 Download PDF

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Publication number
KR20250010069A
KR20250010069A KR1020247041326A KR20247041326A KR20250010069A KR 20250010069 A KR20250010069 A KR 20250010069A KR 1020247041326 A KR1020247041326 A KR 1020247041326A KR 20247041326 A KR20247041326 A KR 20247041326A KR 20250010069 A KR20250010069 A KR 20250010069A
Authority
KR
South Korea
Prior art keywords
voltage
substrate
edge ring
bias
voltage supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247041326A
Other languages
English (en)
Korean (ko)
Inventor
최명열
잉 우
마이클 존 마틴
알렉산더 밀러 패터슨
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20250010069A publication Critical patent/KR20250010069A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020247041326A 2022-05-17 2023-05-16 비정현파 전압 소스를 사용한 기판 에지에 대한 이온 에너지 분배 제어 Pending KR20250010069A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263343082P 2022-05-17 2022-05-17
US63/343,082 2022-05-17
PCT/US2023/022436 WO2023225033A1 (en) 2022-05-17 2023-05-16 Ion energy distribution control over substrate edge with non-sinusoidal voltage source

Publications (1)

Publication Number Publication Date
KR20250010069A true KR20250010069A (ko) 2025-01-20

Family

ID=88836035

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247041326A Pending KR20250010069A (ko) 2022-05-17 2023-05-16 비정현파 전압 소스를 사용한 기판 에지에 대한 이온 에너지 분배 제어

Country Status (6)

Country Link
US (1) US20250323018A1 (enExample)
JP (1) JP2025518518A (enExample)
KR (1) KR20250010069A (enExample)
CN (1) CN119213527A (enExample)
TW (1) TW202410126A (enExample)
WO (1) WO2023225033A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025187456A1 (ja) * 2024-03-07 2025-09-12 東京エレクトロン株式会社 プラズマ処理装置、バイアス電源システム、及びプラズマ処理方法
US20250364211A1 (en) * 2024-05-24 2025-11-27 Tokyo Electron Limited System and method for plasma process
CN119517722B (zh) * 2025-01-21 2025-05-13 中微半导体设备(上海)股份有限公司 一种下电极组件、等离子体处理设备及其电压控制方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100782370B1 (ko) * 2006-08-04 2007-12-07 삼성전자주식회사 지연 전기장을 이용한 이온 에너지 분포 분석기에 근거한이온 분석 시스템
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
JP2018006299A (ja) * 2016-07-08 2018-01-11 東芝メモリ株式会社 プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法
US11955314B2 (en) * 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
US11848176B2 (en) * 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power

Also Published As

Publication number Publication date
US20250323018A1 (en) 2025-10-16
CN119213527A (zh) 2024-12-27
JP2025518518A (ja) 2025-06-17
WO2023225033A1 (en) 2023-11-23
TW202410126A (zh) 2024-03-01

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