CN119213527A - 利用非正弦电压源的在衬底边缘上方的离子能量分布控制 - Google Patents

利用非正弦电压源的在衬底边缘上方的离子能量分布控制 Download PDF

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Publication number
CN119213527A
CN119213527A CN202380041223.XA CN202380041223A CN119213527A CN 119213527 A CN119213527 A CN 119213527A CN 202380041223 A CN202380041223 A CN 202380041223A CN 119213527 A CN119213527 A CN 119213527A
Authority
CN
China
Prior art keywords
voltage
bias
pulse
edge ring
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380041223.XA
Other languages
English (en)
Chinese (zh)
Inventor
崔明烈
吴垠
迈克尔·约翰·马丁
亚历山大·米勒·帕特森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN119213527A publication Critical patent/CN119213527A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN202380041223.XA 2022-05-17 2023-05-16 利用非正弦电压源的在衬底边缘上方的离子能量分布控制 Pending CN119213527A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263343082P 2022-05-17 2022-05-17
US63/343,082 2022-05-17
PCT/US2023/022436 WO2023225033A1 (en) 2022-05-17 2023-05-16 Ion energy distribution control over substrate edge with non-sinusoidal voltage source

Publications (1)

Publication Number Publication Date
CN119213527A true CN119213527A (zh) 2024-12-27

Family

ID=88836035

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380041223.XA Pending CN119213527A (zh) 2022-05-17 2023-05-16 利用非正弦电压源的在衬底边缘上方的离子能量分布控制

Country Status (6)

Country Link
US (1) US20250323018A1 (enExample)
JP (1) JP2025518518A (enExample)
KR (1) KR20250010069A (enExample)
CN (1) CN119213527A (enExample)
TW (1) TW202410126A (enExample)
WO (1) WO2023225033A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119517722A (zh) * 2025-01-21 2025-02-25 中微半导体设备(上海)股份有限公司 一种下电极组件、等离子体处理设备及其电压控制方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025187456A1 (ja) * 2024-03-07 2025-09-12 東京エレクトロン株式会社 プラズマ処理装置、バイアス電源システム、及びプラズマ処理方法
US20250364211A1 (en) * 2024-05-24 2025-11-27 Tokyo Electron Limited System and method for plasma process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100782370B1 (ko) * 2006-08-04 2007-12-07 삼성전자주식회사 지연 전기장을 이용한 이온 에너지 분포 분석기에 근거한이온 분석 시스템
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
JP2018006299A (ja) * 2016-07-08 2018-01-11 東芝メモリ株式会社 プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法
US11955314B2 (en) * 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
US11848176B2 (en) * 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119517722A (zh) * 2025-01-21 2025-02-25 中微半导体设备(上海)股份有限公司 一种下电极组件、等离子体处理设备及其电压控制方法
CN119517722B (zh) * 2025-01-21 2025-05-13 中微半导体设备(上海)股份有限公司 一种下电极组件、等离子体处理设备及其电压控制方法

Also Published As

Publication number Publication date
US20250323018A1 (en) 2025-10-16
JP2025518518A (ja) 2025-06-17
KR20250010069A (ko) 2025-01-20
WO2023225033A1 (en) 2023-11-23
TW202410126A (zh) 2024-03-01

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