JP2025514677A - 量子ドット色変換材料を含む発光素子およびその製造方法 - Google Patents

量子ドット色変換材料を含む発光素子およびその製造方法 Download PDF

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Publication number
JP2025514677A
JP2025514677A JP2024560427A JP2024560427A JP2025514677A JP 2025514677 A JP2025514677 A JP 2025514677A JP 2024560427 A JP2024560427 A JP 2024560427A JP 2024560427 A JP2024560427 A JP 2024560427A JP 2025514677 A JP2025514677 A JP 2025514677A
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Japan
Prior art keywords
color conversion
light emitting
quantum dot
photocurable
conversion element
Prior art date
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Pending
Application number
JP2024560427A
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English (en)
Japanese (ja)
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JP2025514677A5 (enExample
Inventor
チャッダ，サケット
タンジララ，ラビスバーシュ
ファン，イワン
オルマイヤー，デイビッド
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Shoei Chemical Inc
Original Assignee
Shoei Chemical Inc
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Publication date
Application filed by Shoei Chemical Inc filed Critical Shoei Chemical Inc
Publication of JP2025514677A publication Critical patent/JP2025514677A/ja
Publication of JP2025514677A5 publication Critical patent/JP2025514677A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/851—Wavelength conversion means
    • H10H29/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H29/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/20—Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group H10H20/00
    • H10H29/24—Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group H10H20/00 comprising multiple light-emitting semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/851—Wavelength conversion means
    • H10H29/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/851—Wavelength conversion means
    • H10H29/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

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  • Led Device Packages (AREA)
JP2024560427A 2022-04-13 2023-04-12 量子ドット色変換材料を含む発光素子およびその製造方法 Pending JP2025514677A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263330407P 2022-04-13 2022-04-13
US63/330,407 2022-04-13
PCT/US2023/018311 WO2023200855A1 (en) 2022-04-13 2023-04-12 Light emitting devices including a quantum dot color conversion material and method of making thereof

Publications (2)

Publication Number Publication Date
JP2025514677A true JP2025514677A (ja) 2025-05-09
JP2025514677A5 JP2025514677A5 (enExample) 2026-04-13

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JP2024560427A Pending JP2025514677A (ja) 2022-04-13 2023-04-12 量子ドット色変換材料を含む発光素子およびその製造方法

Country Status (5)

Country Link
US (1) US20250255078A1 (enExample)
JP (1) JP2025514677A (enExample)
KR (1) KR20250002484A (enExample)
CN (1) CN119013796A (enExample)
WO (1) WO2023200855A1 (enExample)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11094530B2 (en) * 2019-05-14 2021-08-17 Applied Materials, Inc. In-situ curing of color conversion layer
CN111490090B (zh) * 2020-04-30 2022-12-16 上海天马微电子有限公司 显示面板及显示装置
CN111580301B (zh) * 2020-06-10 2022-07-12 京东方科技集团股份有限公司 一种彩膜基板、其制作方法及显示装置
CN114141809B (zh) * 2021-11-30 2023-07-25 深圳市华星光电半导体显示技术有限公司 一种显示面板的制备方法及显示面板
CN114038984B (zh) * 2021-12-02 2023-03-31 业成科技（成都）有限公司 微发光二极体显示器和其形成方法

Also Published As

Publication number Publication date
WO2023200855A9 (en) 2024-05-16
WO2023200855A1 (en) 2023-10-19
KR20250002484A (ko) 2025-01-07
CN119013796A (zh) 2024-11-22
US20250255078A1 (en) 2025-08-07

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