JP2025509548A5 - - Google Patents
Info
- Publication number
- JP2025509548A5 JP2025509548A5 JP2024554750A JP2024554750A JP2025509548A5 JP 2025509548 A5 JP2025509548 A5 JP 2025509548A5 JP 2024554750 A JP2024554750 A JP 2024554750A JP 2024554750 A JP2024554750 A JP 2024554750A JP 2025509548 A5 JP2025509548 A5 JP 2025509548A5
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- reactant
- substrate
- exposing
- diisocyanate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263269328P | 2022-03-14 | 2022-03-14 | |
| US63/269,328 | 2022-03-14 | ||
| PCT/US2023/015028 WO2023177594A1 (en) | 2022-03-14 | 2023-03-10 | Sidewall passivation using aldehyde or isocyanate chemistry for high aspect ratio etch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025509548A JP2025509548A (ja) | 2025-04-11 |
| JP2025509548A5 true JP2025509548A5 (https=) | 2026-03-17 |
Family
ID=88024171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024554750A Pending JP2025509548A (ja) | 2022-03-14 | 2023-03-10 | 高アスペクト比エッチングのためにアルデヒドまたはイソシアネート化学物質を使用した側壁パッシベーション |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250188600A1 (https=) |
| JP (1) | JP2025509548A (https=) |
| KR (1) | KR20240164916A (https=) |
| TW (1) | TW202410175A (https=) |
| WO (1) | WO2023177594A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025128603A1 (en) * | 2023-12-12 | 2025-06-19 | Lam Research Corporation | Bow control of high aspect ratio features during cryogenic etch |
| US20250299962A1 (en) * | 2024-03-20 | 2025-09-25 | Tokyo Electron Limited | Method for etching a layer through a patterned mask layer |
| WO2026080239A1 (en) * | 2024-10-11 | 2026-04-16 | Lam Research Corporation | Etch with conformal deposition liner |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015088732A (ja) * | 2013-09-27 | 2015-05-07 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
| US9887097B2 (en) * | 2014-12-04 | 2018-02-06 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| US11476123B2 (en) * | 2019-09-13 | 2022-10-18 | Tokyo Electron Limited | Etching method, plasma processing apparatus, and substrate processing system |
| JP7323409B2 (ja) * | 2019-10-01 | 2023-08-08 | 東京エレクトロン株式会社 | 基板処理方法、及び、プラズマ処理装置 |
| KR20250174700A (ko) * | 2019-10-18 | 2025-12-12 | 램 리써치 코포레이션 | SIO2:SINx 에칭 선택도를 향상시키기 위한 선택적 부착 |
-
2023
- 2023-03-10 JP JP2024554750A patent/JP2025509548A/ja active Pending
- 2023-03-10 US US18/845,733 patent/US20250188600A1/en active Pending
- 2023-03-10 KR KR1020247034044A patent/KR20240164916A/ko active Pending
- 2023-03-10 WO PCT/US2023/015028 patent/WO2023177594A1/en not_active Ceased
- 2023-03-13 TW TW112109083A patent/TW202410175A/zh unknown
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