JP2024541421A - 両面埋め込みトレース基板(ets)を備えるパッケージ基板を用いた集積回路(ic)パッケージ、及び関連する製造方法 - Google Patents

両面埋め込みトレース基板(ets)を備えるパッケージ基板を用いた集積回路(ic)パッケージ、及び関連する製造方法 Download PDF

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JP2024541421A
JP2024541421A JP2024529645A JP2024529645A JP2024541421A JP 2024541421 A JP2024541421 A JP 2024541421A JP 2024529645 A JP2024529645 A JP 2024529645A JP 2024529645 A JP2024529645 A JP 2024529645A JP 2024541421 A JP2024541421 A JP 2024541421A
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Prior art keywords
metal
layer
ets
package
substrate
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JP2024541421A5 (https=
Inventor
ホン・ボク・ウィ
ジョアン・レイ・ヴィラルバ・ビュオ
ミッシェル・イェジン・キム
クイウォン・カン
アニケット・パティル
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クアルコム,インコーポレイテッド
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/401Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

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  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2024529645A 2021-11-22 2022-10-28 両面埋め込みトレース基板(ets)を備えるパッケージ基板を用いた集積回路(ic)パッケージ、及び関連する製造方法 Pending JP2024541421A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/456,068 US11791320B2 (en) 2021-11-22 2021-11-22 Integrated circuit (IC) packages employing a package substrate with a double side embedded trace substrate (ETS), and related fabrication methods
US17/456,068 2021-11-22
PCT/US2022/078880 WO2023091851A1 (en) 2021-11-22 2022-10-28 Integrated circuit (ic) packages employing a package substrate with a double side embedded trace substrate (ets), and related fabrication methods

Publications (2)

Publication Number Publication Date
JP2024541421A true JP2024541421A (ja) 2024-11-08
JP2024541421A5 JP2024541421A5 (https=) 2025-10-22

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JP2024529645A Pending JP2024541421A (ja) 2021-11-22 2022-10-28 両面埋め込みトレース基板(ets)を備えるパッケージ基板を用いた集積回路(ic)パッケージ、及び関連する製造方法

Country Status (7)

Country Link
US (1) US11791320B2 (https=)
EP (1) EP4437586A1 (https=)
JP (1) JP2024541421A (https=)
KR (1) KR20240101796A (https=)
CN (1) CN118284964A (https=)
TW (1) TW202329347A (https=)
WO (1) WO2023091851A1 (https=)

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US12362269B2 (en) 2021-10-18 2025-07-15 Qualcomm Incorporated Integrated circuit (IC) packages employing supplemental metal layer coupled to embedded metal traces in a die-side embedded trace substrate (ETS) layer, and related fabrication methods
US11791320B2 (en) * 2021-11-22 2023-10-17 Qualcomm Incorporated Integrated circuit (IC) packages employing a package substrate with a double side embedded trace substrate (ETS), and related fabrication methods
US12469808B2 (en) * 2022-08-21 2025-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and manufacturing method thereof
US12500197B2 (en) 2022-12-23 2025-12-16 Deca Technologies Usa, Inc. Encapsulant-defined land grid array (LGA) package and method for making the same
US20250062235A1 (en) * 2023-08-16 2025-02-20 Qualcomm Incorporated Package substrate with metallization layer(s) that includes an additional metal pad layer to facilitate reduced via size for reduced bump pitch, and related integrated circuit (ic) packages and fabrication methods
US12593709B2 (en) * 2023-08-17 2026-03-31 Qualcomm Incorporated Substrate(s) for an integrated circuit (IC) package employing a core layer and an adjacent insulation layer(s) with an embedded metal structure(s) positioned from the core layer
US12424450B2 (en) 2023-11-22 2025-09-23 Deca Technologies Usa, Inc. Embedded component interposer or substrate comprising displacement compensation traces (DCTs) and method of making the same
US12500198B2 (en) 2024-03-01 2025-12-16 Deca Technologies Usa, Inc. Quad flat no-lead (QFN) package with tie bars and direct contact interconnect build-up structure and method for making the same
US12616038B2 (en) 2024-07-03 2026-04-28 Deca Technologies Usa, Inc. Interconnect substrate and method of making

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US5504992A (en) 1991-11-29 1996-04-09 Hitachi Chemical Company, Ltd. Fabrication process of wiring board
DE19645854A1 (de) 1996-11-07 1998-05-14 Hewlett Packard Co Verfahren zur Herstellung von Leiterplatten
US7205483B2 (en) 2004-03-19 2007-04-17 Matsushita Electric Industrial Co., Ltd. Flexible substrate having interlaminar junctions, and process for producing the same
KR100905566B1 (ko) 2007-04-30 2009-07-02 삼성전기주식회사 회로 전사용 캐리어 부재, 이를 이용한 코어리스인쇄회로기판, 및 이들의 제조방법
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US8288202B2 (en) 2010-11-22 2012-10-16 STATS ChiPAC, Ltd. Method of forming partially-etched conductive layer recessed within substrate for bonding to semiconductor die
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US11552055B2 (en) * 2020-11-20 2023-01-10 Qualcomm Incorporated Integrated circuit (IC) packages employing front side back-end-of-line (FS-BEOL) to back side back-end-of-line (BS-BEOL) stacking for three-dimensional (3D) die stacking, and related fabrication methods
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US20230114404A1 (en) * 2021-09-30 2023-04-13 Qualcomm Incorporated Embedded trace substrate (ets) with embedded metal traces having multiple thickness for integrated circuit (ic) package height control
US11791320B2 (en) * 2021-11-22 2023-10-17 Qualcomm Incorporated Integrated circuit (IC) packages employing a package substrate with a double side embedded trace substrate (ETS), and related fabrication methods

Also Published As

Publication number Publication date
CN118284964A (zh) 2024-07-02
EP4437586A1 (en) 2024-10-02
WO2023091851A1 (en) 2023-05-25
US11791320B2 (en) 2023-10-17
KR20240101796A (ko) 2024-07-02
TW202329347A (zh) 2023-07-16
US20230163112A1 (en) 2023-05-25

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