JP2024534530A - より高い接続密度をサポートするためのマルチダイ集積回路パッケージ、及び関連する製造方法 - Google Patents

より高い接続密度をサポートするためのマルチダイ集積回路パッケージ、及び関連する製造方法 Download PDF

Info

Publication number
JP2024534530A
JP2024534530A JP2024517528A JP2024517528A JP2024534530A JP 2024534530 A JP2024534530 A JP 2024534530A JP 2024517528 A JP2024517528 A JP 2024517528A JP 2024517528 A JP2024517528 A JP 2024517528A JP 2024534530 A JP2024534530 A JP 2024534530A
Authority
JP
Japan
Prior art keywords
die
package
substrate
interconnects
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024517528A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024534530A5 (cg-RX-API-DMAC10.html
Inventor
ダルコ・ポポヴィッチ
デュロダミ・リスク
ユエ・リ
Original Assignee
クアルコム,インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by クアルコム,インコーポレイテッド filed Critical クアルコム,インコーポレイテッド
Publication of JP2024534530A publication Critical patent/JP2024534530A/ja
Publication of JP2024534530A5 publication Critical patent/JP2024534530A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07202—Connecting or disconnecting of bump connectors using auxiliary members
    • H10W72/07204—Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
    • H10W72/07207—Temporary substrates, e.g. removable substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/288—Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2024517528A 2021-09-24 2022-08-24 より高い接続密度をサポートするためのマルチダイ集積回路パッケージ、及び関連する製造方法 Pending JP2024534530A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/484,475 US12062648B2 (en) 2021-09-24 2021-09-24 Multiple (multi-) die integrated circuit (IC) packages for supporting higher connection density, and related fabrication methods
US17/484,475 2021-09-24
PCT/US2022/075390 WO2023049589A1 (en) 2021-09-24 2022-08-24 Multi-die integrated circuit packages for supporting higher connection density, and related fabrication methods

Publications (2)

Publication Number Publication Date
JP2024534530A true JP2024534530A (ja) 2024-09-20
JP2024534530A5 JP2024534530A5 (cg-RX-API-DMAC10.html) 2025-08-20

Family

ID=83318886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024517528A Pending JP2024534530A (ja) 2021-09-24 2022-08-24 より高い接続密度をサポートするためのマルチダイ集積回路パッケージ、及び関連する製造方法

Country Status (7)

Country Link
US (1) US12062648B2 (cg-RX-API-DMAC10.html)
EP (1) EP4406024A1 (cg-RX-API-DMAC10.html)
JP (1) JP2024534530A (cg-RX-API-DMAC10.html)
KR (1) KR20240069727A (cg-RX-API-DMAC10.html)
CN (1) CN117957654A (cg-RX-API-DMAC10.html)
TW (1) TW202320247A (cg-RX-API-DMAC10.html)
WO (1) WO2023049589A1 (cg-RX-API-DMAC10.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230268319A1 (en) * 2021-10-14 2023-08-24 Advanced Micro Devices, Inc. Stacking semiconductor devices by bonding front surfaces of different dies to each other
US12463156B2 (en) * 2021-11-10 2025-11-04 Intel Corporation Packaging architectures for sub-terahertz radio frequency devices
US11791320B2 (en) * 2021-11-22 2023-10-17 Qualcomm Incorporated Integrated circuit (IC) packages employing a package substrate with a double side embedded trace substrate (ETS), and related fabrication methods
US12622317B2 (en) * 2021-12-21 2026-05-05 Intel Corporation Packaging architecture for modular die interoperability
US12436467B2 (en) * 2021-12-23 2025-10-07 Intel Corporation Simulating die rotation to minimize area overhead of reticle stitching for stacked dies
TWI875390B (zh) * 2023-12-20 2025-03-01 力成科技股份有限公司 堆疊式封裝結構
CN117790437B (zh) * 2023-12-29 2026-05-08 泉州市三安集成电路有限公司 射频模块和射频模块的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101624973B1 (ko) 2009-09-23 2016-05-30 삼성전자주식회사 패키지 온 패키지 타입의 반도체 패키지 및 그 제조방법
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
CN104064551B (zh) 2014-06-05 2018-01-16 华为技术有限公司 一种芯片堆叠封装结构和电子设备
JP2016529716A (ja) 2014-07-07 2016-09-23 インテル アイピー コーポレーション パッケージオンパッケージ積層マイクロ電子構造体
US10453785B2 (en) * 2014-08-07 2019-10-22 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming double-sided fan-out wafer level package

Also Published As

Publication number Publication date
TW202320247A (zh) 2023-05-16
US20230102167A1 (en) 2023-03-30
EP4406024A1 (en) 2024-07-31
US12062648B2 (en) 2024-08-13
KR20240069727A (ko) 2024-05-20
CN117957654A (zh) 2024-04-30
WO2023049589A1 (en) 2023-03-30

Similar Documents

Publication Publication Date Title
US12062648B2 (en) Multiple (multi-) die integrated circuit (IC) packages for supporting higher connection density, and related fabrication methods
JP7492086B2 (ja) 3次元(3d)ダイスタッキングのために表側バックエンドオブライン(fs-beol)と裏側バックエンドオブライン(bs-beol)のスタッキングを採用する集積回路(ic)パッケージ、および関連する製作方法
US11791320B2 (en) Integrated circuit (IC) packages employing a package substrate with a double side embedded trace substrate (ETS), and related fabrication methods
US20230114404A1 (en) Embedded trace substrate (ets) with embedded metal traces having multiple thickness for integrated circuit (ic) package height control
US20230317677A1 (en) Three-dimensional (3d) integrated circuit (ic) (3dic) package employing a redistribution layer (rdl) interposer facilitating semiconductor die stacking, and related fabrication methods
TW202314873A (zh) 將附加金屬用於基於ets的基板中的嵌入式金屬跡線以獲得減少的信號路徑阻抗的積體電路(ic)封裝及相關製造方法
TW202412247A (zh) 採用具有對準的外部互連的電容器中介層基板的積體電路(ic)封裝以及相關製造方法
TWI914389B (zh) 用於改進連通性的具有重構晶粒中介體的積體電路(ic)及相關製造方法
US12525574B2 (en) Three-dimensional (3D) integrated circuit (IC) (3DIC) package with a bottom die layer employing an extended interposer substrate, and related fabrication methods
US20240332146A1 (en) Integrated circuit (ic) package employing metal posts thermally coupling a die to an interposer substrate for dissipating thermal energy of the die, and related fabrication methods
US20230307336A1 (en) Package substrates employing pad metallization layer for increased signal routing capacity, and related integrated circuit (ic) packages and fabrication methods
TW202425236A (zh) 採用旁路金屬跡線信號佈線的深溝槽電容器(dtc)以及相關的積體電路(ic)封裝和製造方法
TW202322330A (zh) 採用耦合到晶粒側嵌入式跡線基板(ets)層中的嵌入式金屬跡線的補充金屬層的積體電路(ic)封裝以及相關的製造方法
US12628354B2 (en) Package dies including vertical interconnects for signal and power distribution in a three-dimensional (3D) integrated circuit (IC) package
KR20260020098A (ko) 다이의 열 에너지를 소산시키기 위해 다이를 인터포저 기판에 열적으로 결합하는 금속 인터커넥트들을 갖는 금속 블록을 사용하는 집적 회로(ic) 패키지 및 관련 제조 방법들

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250808

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250808