JP2024521349A - レーザ光源の制御 - Google Patents

レーザ光源の制御 Download PDF

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Publication number
JP2024521349A
JP2024521349A JP2023574277A JP2023574277A JP2024521349A JP 2024521349 A JP2024521349 A JP 2024521349A JP 2023574277 A JP2023574277 A JP 2023574277A JP 2023574277 A JP2023574277 A JP 2023574277A JP 2024521349 A JP2024521349 A JP 2024521349A
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JP
Japan
Prior art keywords
laser
current
laser device
duty cycle
amplitude
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Pending
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JP2023574277A
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English (en)
Japanese (ja)
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JP2024521349A5 (https=
Inventor
カルネクマール アルランドゥ
マティアス ヴェント
オレクサンデル ヴァレンティノヴィッチ ヴドヴィン
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Signify Holding BV
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Signify Holding BV
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Publication date
Application filed by Signify Holding BV filed Critical Signify Holding BV
Publication of JP2024521349A publication Critical patent/JP2024521349A/ja
Publication of JP2024521349A5 publication Critical patent/JP2024521349A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/32—Pulse-control circuits
    • H05B45/325—Pulse-width modulation [PWM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06835—Stabilising during pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
JP2023574277A 2021-06-01 2022-05-30 レーザ光源の制御 Pending JP2024521349A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21177036.7 2021-06-01
EP21177036 2021-06-01
PCT/EP2022/064574 WO2022253740A1 (en) 2021-06-01 2022-05-30 Control of laser sources

Publications (2)

Publication Number Publication Date
JP2024521349A true JP2024521349A (ja) 2024-05-31
JP2024521349A5 JP2024521349A5 (https=) 2025-06-05

Family

ID=76217726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023574277A Pending JP2024521349A (ja) 2021-06-01 2022-05-30 レーザ光源の制御

Country Status (5)

Country Link
US (1) US20240266800A1 (https=)
EP (1) EP4348779A1 (https=)
JP (1) JP2024521349A (https=)
CN (1) CN117413440A (https=)
WO (1) WO2022253740A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN218351894U (zh) * 2021-11-08 2023-01-20 神盾股份有限公司 激光二极管电路
CN117595057B (zh) * 2024-01-18 2024-04-26 北京卓镭激光技术有限公司 一种基于晶体温度的激光器功率控制方法和装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012519979A (ja) * 2009-03-09 2012-08-30 イーストマン コダック カンパニー 発光パワー安定化レーザダイオードアレイ
JP2015170708A (ja) * 2014-03-06 2015-09-28 オリンパス株式会社 光源装置、内視鏡装置及び光源制御方法
JP2017028147A (ja) * 2015-07-24 2017-02-02 日本精機株式会社 レーザー光源装置及びレーザー走査型表示装置
JP2017106977A (ja) * 2015-12-07 2017-06-15 船井電機株式会社 プロジェクタ
US20180183208A1 (en) * 2016-12-23 2018-06-28 Axon Enterprise, Inc. Systems and Methods for Calibrating, Operating, and Setting a Laser Diode in a Weapon
JP2019192850A (ja) * 2018-04-27 2019-10-31 日亜化学工業株式会社 駆動回路及び処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8605763B2 (en) * 2010-03-31 2013-12-10 Microsoft Corporation Temperature measurement and control for laser and light-emitting diodes
JP5533154B2 (ja) * 2010-04-02 2014-06-25 ソニー株式会社 半導体発光装置
US10361537B2 (en) * 2017-10-23 2019-07-23 Microsoft Technology Licensing, Llc Dynamic supply voltage control circuit for laser diode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012519979A (ja) * 2009-03-09 2012-08-30 イーストマン コダック カンパニー 発光パワー安定化レーザダイオードアレイ
JP2015170708A (ja) * 2014-03-06 2015-09-28 オリンパス株式会社 光源装置、内視鏡装置及び光源制御方法
JP2017028147A (ja) * 2015-07-24 2017-02-02 日本精機株式会社 レーザー光源装置及びレーザー走査型表示装置
JP2017106977A (ja) * 2015-12-07 2017-06-15 船井電機株式会社 プロジェクタ
US20180183208A1 (en) * 2016-12-23 2018-06-28 Axon Enterprise, Inc. Systems and Methods for Calibrating, Operating, and Setting a Laser Diode in a Weapon
JP2019192850A (ja) * 2018-04-27 2019-10-31 日亜化学工業株式会社 駆動回路及び処理装置

Also Published As

Publication number Publication date
EP4348779A1 (en) 2024-04-10
CN117413440A (zh) 2024-01-16
US20240266800A1 (en) 2024-08-08
WO2022253740A1 (en) 2022-12-08

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