JP2024501694A5 - - Google Patents
Info
- Publication number
- JP2024501694A5 JP2024501694A5 JP2023540104A JP2023540104A JP2024501694A5 JP 2024501694 A5 JP2024501694 A5 JP 2024501694A5 JP 2023540104 A JP2023540104 A JP 2023540104A JP 2023540104 A JP2023540104 A JP 2023540104A JP 2024501694 A5 JP2024501694 A5 JP 2024501694A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- concentration gradient
- concentration
- junction
- cadmium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2014308A FR3118532B1 (fr) | 2020-12-31 | 2020-12-31 | Procede de fabrication d’une structure photodiode et structure photodiode |
| FR2014308 | 2020-12-31 | ||
| PCT/EP2021/087850 WO2022144419A1 (fr) | 2020-12-31 | 2021-12-30 | Procédé de fabrication d'une structure photodiode et structure photodiode |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024501694A JP2024501694A (ja) | 2024-01-15 |
| JP2024501694A5 true JP2024501694A5 (https=) | 2024-12-13 |
| JP7814393B2 JP7814393B2 (ja) | 2026-02-16 |
Family
ID=75339874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023540104A Active JP7814393B2 (ja) | 2020-12-31 | 2021-12-30 | フォトダイオード構造の製造方法およびフォトダイオード構造 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12514022B2 (https=) |
| EP (1) | EP4272264A1 (https=) |
| JP (1) | JP7814393B2 (https=) |
| KR (1) | KR20230122673A (https=) |
| FR (1) | FR3118532B1 (https=) |
| IL (1) | IL304045B1 (https=) |
| WO (1) | WO2022144419A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118335849B (zh) * | 2024-06-12 | 2024-10-11 | 中国电子科技集团公司第十一研究所 | 低暗电流p on n型碲镉汞器件、制备方法及红外探测器 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3902924A (en) | 1973-08-30 | 1975-09-02 | Honeywell Inc | Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof |
| US4376663A (en) | 1980-11-18 | 1983-03-15 | The United States Of America As Represented By The Secretary Of The Army | Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate |
| JPH04258180A (ja) * | 1991-02-12 | 1992-09-14 | Mitsubishi Electric Corp | 赤外線検知素子 |
| JPH05226685A (ja) * | 1992-02-14 | 1993-09-03 | Fujitsu Ltd | 光検知素子の製造方法 |
| JPH06260675A (ja) * | 1993-03-09 | 1994-09-16 | Fujitsu Ltd | 光検知素子およびその製造方法 |
| US5846850A (en) | 1995-09-05 | 1998-12-08 | Raytheon Ti Systems, Inc. | Double sided interdiffusion process and structure for a double layer heterojunction focal plane array |
| US5998809A (en) | 1995-10-06 | 1999-12-07 | Raytheon Company | Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter |
| US5861321A (en) | 1995-11-21 | 1999-01-19 | Texas Instruments Incorporated | Method for doping epitaxial layers using doped substrate material |
| JPH09232617A (ja) * | 1996-02-21 | 1997-09-05 | Fujitsu Ltd | 赤外線検知素子及びその製造方法 |
| JPH09246576A (ja) * | 1996-03-11 | 1997-09-19 | Toshiba Corp | 半導体光電変換素子及びその製造方法 |
| FR2754107B1 (fr) | 1996-10-01 | 1998-10-30 | Commissariat Energie Atomique | Detecteur de rayonnement photonique de grandes dimensions |
| JP2001274451A (ja) * | 2000-03-27 | 2001-10-05 | Toshiba Corp | 半導体撮像素子およびその製造方法 |
| US20140217540A1 (en) | 2013-02-04 | 2014-08-07 | Teledyne Scientific & Imaging, Llc | Fully depleted diode passivation active passivation architecture |
| CN103681937B (zh) * | 2013-11-21 | 2015-11-25 | 中国科学院上海技术物理研究所 | 基于光子晶体限光效应的焦平面探测器结构的设计方法 |
| FR3020176B1 (fr) * | 2014-04-22 | 2017-09-29 | Commissariat Energie Atomique | Matrice de photodiodes en cdhgte |
| FR3050572B1 (fr) * | 2016-04-26 | 2018-04-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de photo-detection a reseau inter-diodes sur-dope et procede de fabrication |
| WO2021205102A1 (fr) * | 2020-04-09 | 2021-10-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | PROCÉDÉ DE FABRICATION D'UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe |
| US12532552B2 (en) * | 2021-07-15 | 2026-01-20 | Sivananthan Laboratories, Inc. | Metasurface-coupled single photon avalanche diode for high temperature operation |
-
2020
- 2020-12-31 FR FR2014308A patent/FR3118532B1/fr active Active
-
2021
- 2021-12-30 KR KR1020237025509A patent/KR20230122673A/ko active Pending
- 2021-12-30 EP EP21844784.5A patent/EP4272264A1/fr active Pending
- 2021-12-30 WO PCT/EP2021/087850 patent/WO2022144419A1/fr not_active Ceased
- 2021-12-30 IL IL304045A patent/IL304045B1/en unknown
- 2021-12-30 JP JP2023540104A patent/JP7814393B2/ja active Active
- 2021-12-30 US US18/270,126 patent/US12514022B2/en active Active
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