JP7814393B2 - フォトダイオード構造の製造方法およびフォトダイオード構造 - Google Patents

フォトダイオード構造の製造方法およびフォトダイオード構造

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Publication number
JP7814393B2
JP7814393B2 JP2023540104A JP2023540104A JP7814393B2 JP 7814393 B2 JP7814393 B2 JP 7814393B2 JP 2023540104 A JP2023540104 A JP 2023540104A JP 2023540104 A JP2023540104 A JP 2023540104A JP 7814393 B2 JP7814393 B2 JP 7814393B2
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Prior art keywords
layer
concentration
cadmium
concentration gradient
electrical dopant
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Japanese (ja)
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JP2024501694A5 (https=
JP2024501694A (ja
Inventor
ニコラス、ペール－ラペルヌ
アレクサンドル、ケルラン
バンサン、デステファニス
ポール、フジェール
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Lynred SAS
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Lynred SAS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
JP2023540104A 2020-12-31 2021-12-30 フォトダイオード構造の製造方法およびフォトダイオード構造 Active JP7814393B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR2014308A FR3118532B1 (fr) 2020-12-31 2020-12-31 Procede de fabrication d’une structure photodiode et structure photodiode
FR2014308 2020-12-31
PCT/EP2021/087850 WO2022144419A1 (fr) 2020-12-31 2021-12-30 Procédé de fabrication d'une structure photodiode et structure photodiode

Publications (3)

Publication Number Publication Date
JP2024501694A JP2024501694A (ja) 2024-01-15
JP2024501694A5 JP2024501694A5 (https=) 2024-12-13
JP7814393B2 true JP7814393B2 (ja) 2026-02-16

Family

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JP2023540104A Active JP7814393B2 (ja) 2020-12-31 2021-12-30 フォトダイオード構造の製造方法およびフォトダイオード構造

Country Status (7)

Country Link
US (1) US12514022B2 (https=)
EP (1) EP4272264A1 (https=)
JP (1) JP7814393B2 (https=)
KR (1) KR20230122673A (https=)
FR (1) FR3118532B1 (https=)
IL (1) IL304045B1 (https=)
WO (1) WO2022144419A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118335849B (zh) * 2024-06-12 2024-10-11 中国电子科技集团公司第十一研究所 低暗电流p on n型碲镉汞器件、制备方法及红外探测器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274451A (ja) 2000-03-27 2001-10-05 Toshiba Corp 半導体撮像素子およびその製造方法
CN103681937A (zh) 2013-11-21 2014-03-26 中国科学院上海技术物理研究所 基于光子晶体限光效应的焦平面探测器结构的设计方法

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US3902924A (en) 1973-08-30 1975-09-02 Honeywell Inc Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof
US4376663A (en) 1980-11-18 1983-03-15 The United States Of America As Represented By The Secretary Of The Army Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate
JPH04258180A (ja) * 1991-02-12 1992-09-14 Mitsubishi Electric Corp 赤外線検知素子
JPH05226685A (ja) * 1992-02-14 1993-09-03 Fujitsu Ltd 光検知素子の製造方法
JPH06260675A (ja) * 1993-03-09 1994-09-16 Fujitsu Ltd 光検知素子およびその製造方法
US5846850A (en) 1995-09-05 1998-12-08 Raytheon Ti Systems, Inc. Double sided interdiffusion process and structure for a double layer heterojunction focal plane array
US5998809A (en) 1995-10-06 1999-12-07 Raytheon Company Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter
US5861321A (en) 1995-11-21 1999-01-19 Texas Instruments Incorporated Method for doping epitaxial layers using doped substrate material
JPH09232617A (ja) * 1996-02-21 1997-09-05 Fujitsu Ltd 赤外線検知素子及びその製造方法
JPH09246576A (ja) * 1996-03-11 1997-09-19 Toshiba Corp 半導体光電変換素子及びその製造方法
FR2754107B1 (fr) 1996-10-01 1998-10-30 Commissariat Energie Atomique Detecteur de rayonnement photonique de grandes dimensions
US20140217540A1 (en) 2013-02-04 2014-08-07 Teledyne Scientific & Imaging, Llc Fully depleted diode passivation active passivation architecture
FR3020176B1 (fr) * 2014-04-22 2017-09-29 Commissariat Energie Atomique Matrice de photodiodes en cdhgte
FR3050572B1 (fr) * 2016-04-26 2018-04-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de photo-detection a reseau inter-diodes sur-dope et procede de fabrication
WO2021205102A1 (fr) * 2020-04-09 2021-10-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives PROCÉDÉ DE FABRICATION D'UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe
US12532552B2 (en) * 2021-07-15 2026-01-20 Sivananthan Laboratories, Inc. Metasurface-coupled single photon avalanche diode for high temperature operation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274451A (ja) 2000-03-27 2001-10-05 Toshiba Corp 半導体撮像素子およびその製造方法
CN103681937A (zh) 2013-11-21 2014-03-26 中国科学院上海技术物理研究所 基于光子晶体限光效应的焦平面探测器结构的设计方法

Also Published As

Publication number Publication date
IL304045B1 (en) 2026-04-01
KR20230122673A (ko) 2023-08-22
EP4272264A1 (fr) 2023-11-08
WO2022144419A1 (fr) 2022-07-07
US20240072183A1 (en) 2024-02-29
FR3118532B1 (fr) 2023-06-16
IL304045A (en) 2023-08-01
JP2024501694A (ja) 2024-01-15
US12514022B2 (en) 2025-12-30
FR3118532A1 (fr) 2022-07-01

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