JP2024037319A - Resin composition, cured product and application of the same - Google Patents

Abstract

To provide a resin composition which enables production of a cured product or the like that is excellent in a high dielectric constant and a low dielectric loss tangent.SOLUTION: A resin composition contains (A) a cyanate resin having a cyanate equivalent of 200 or more, (B) an epoxy resin, and (C) at least one high dielectric filler selected from titanium oxide, barium titanate, strontium titanate, calcium titanate and magnesium titanate.SELECTED DRAWING: None

Description

The present invention relates to a resin composition, a cured product, and uses thereof.

In recent years, wireless communication has become faster, and there is a demand for higher performance and smaller size of the communication equipment used. Furthermore, in recent years, the capacity of wireless communication has increased rapidly, and as a result, the frequencies used for transmission signals are rapidly becoming wider and higher in frequency. For this reason, the frequency band used by communication equipment cannot be supported by the conventional microwave band alone, and is being expanded to include the millimeter wave band. Against this background, there is a strong demand for higher performance antennas installed in communication equipment.

Communication equipment can be further miniaturized if the dielectric constant of the antenna material (dielectric substrate) built into the communication equipment increases. Furthermore, when the dielectric loss tangent of the dielectric substrate becomes smaller, the loss becomes lower, which is advantageous for higher frequencies. Therefore, if a dielectric substrate with a high dielectric constant and a small dielectric loss tangent can be used, it is possible to achieve higher frequencies, thereby shortening the circuit length and downsizing the communication equipment.

Patent Document 1 discloses a molding resin composition containing an epoxy resin, a curing agent, and an inorganic filler, and the inorganic filler includes a predetermined amount of calcium titanate particles, a predetermined amount of titanate particles, and a predetermined amount of titanate particles. The inclusion of strontium particles, as well as silica particles or alumina particles, has been described. Note that this document states that this molding resin composition is used for sealing electronic components in high-frequency devices.

Patent No. 6870778

However, the cured product obtained from the molding resin composition described in Patent Document 1 has room for improvement in high dielectric constant and low dielectric loss tangent.

The present inventors have discovered that the problem can be solved by using a specific cyanate resin and a specific high dielectric filler in combination, and have completed the present invention.
That is, the present invention can be shown below.

（一般式（１）中、Ａは、下記一般式（１ａ）で表される２価の基、置換された炭素数１～５のアルキレン基、または置換されていてもよい２価の環状脂肪族基を示す。
置換された炭素数１～５の前記アルキレン基の置換基は、炭素数１～３のアルキル基またはアリール基である。

（一般式（１ａ）中、Ｘ^１およびＸ^２は同一でも異なっていてもよく、炭素数１～３のアルキル基で置換された炭素数１～５のアルキレン基を示し、＊は結合手を示す。）
Ｑ^１およびＱ^２は同一でも異なっていてもよく、水素原子または置換されていてもよいアリール基を示す。
Ａが－Ｃ（ＣＨ_３）_２－であり、Ｑ^１およびＱ^２が水素原子である場合、Ａが－ＣＨ（ＣＨ_３）－であり、Ｑ^１およびＱ^２が水素原子である場合を除く。）
［３］ 樹脂（ａ１）は構造中に含まれるアリール基の数が３以上である、［１］または［２］に記載の樹脂組成物。
［４］ シアネート樹脂（Ａ）は、樹脂（ａ１）のオリゴマーを含む、［１］～［３］のいずれかに記載の樹脂組成物。
［５］ エポキシ樹脂（Ｂ）が、エポキシ当量が１９０以上のエポキシ樹脂を含む、［１］～［４］のいずれかに記載の樹脂組成物。
［６］ 前記樹脂組成物１００体積％中に、高誘電フィラー（Ｃ）を１０質量％以上９５質量％以下の量で含む、［１］～［５］のいずれかに記載の樹脂組成物。
［７］ さらにフィラー（Ｄ）（高誘電フィラー（Ｃ）を除く）を含み、
前記樹脂組成物１００質量％中に、フィラー（Ｄ）を１質量％以上６０質量％以下の量で含む、［１］～［６］のいずれかに記載の樹脂組成物。
［８］ さらにマレイミド化合物（Ｅ）を含む、［１］～［７］のいずれかに記載の樹脂組成物。
［９］ さらにクマロン樹脂（Ｆ）を含む、［１］～［８］のいずれかに記載の樹脂組成物。
［１０］ 高周波デバイスにおける電子部品の形成用に用いられる、［１］～［９］のいずれかに記載の樹脂組成物。
［１１］ ［１］～［１０］のいずれかに記載の樹脂組成物を硬化してなる硬化物。
［１２］ ［１１］に記載の硬化物からなる高誘電率材料。
［１３］ キャリア基材と、
前記キャリア基材上に設けられている、［１］～［１０］のいずれかに記載の樹脂組成物からなる樹脂膜と、を備える、キャリア付樹脂膜。
［１４］ ［１］～［１０］のいずれかに記載の樹脂組成物を繊維基材に含浸させて形成されたプリプレグ。
［１５］ 前記繊維基材が、ガラス繊維基材、ポリアミド系樹脂繊維、ポリエステル系樹脂繊維、ポリイミド樹脂繊維、およびフッ素樹脂繊維の中から選ばれる１種または２種以上を含む、［１４］に記載のプリプレグ。
［１６］ ［１］～［１０］のいずれかに記載の樹脂組成物を硬化してなる誘電体基板。
［１７］ ［１６］に記載の誘電体基板からなるアンテナ基板。
［１８］ ［１４］または［１５］に記載のプリプレグと、
前記プリプレグの少なくとも一方の面に積層された金属層と、
を備える、金属張積層板。
［１９］ ［１４］または［１５］に記載のプリプレグの成形体と、前記成形体の両面または片面に設けられた配線パターンとを備える、プリント配線基板。
［２０］ ［１９］に記載のプリント配線基板と、
前記プリント配線基板の前記回路層上に搭載された、または前記プリント配線基板に内蔵された半導体素子と、を備える、半導体装置。 [1] (A) a cyanate resin having a cyanate equivalent of 200 or more;
(B) an epoxy resin;
(C) at least one high dielectric filler selected from titanium oxide, barium titanate, strontium titanate, calcium titanate, and magnesium titanate;
A resin composition comprising:
[2] The resin composition according to [1], wherein the cyanate resin (A) contains a resin (a1) represented by the following general formula (1) and/or a prepolymer (a2) thereof.

(In general formula (1), A is a divalent group represented by the following general formula (1a), a substituted alkylene group having 1 to 5 carbon atoms, or an optionally substituted divalent cyclic aliphatic group) Indicates a family group.
The substituent of the substituted alkylene group having 1 to 5 carbon atoms is an alkyl group or aryl group having 1 to 3 carbon atoms.

(In general formula (1a), X ¹ and X ² may be the same or different and represent an alkylene group having 1 to 5 carbon atoms substituted with an alkyl group having 1 to 3 carbon atoms, and * indicates a bond. show.)
Q ¹ and Q ² may be the same or different and represent a hydrogen atom or an optionally substituted aryl group.
When A is -C(CH ₃ ) ₂ - and Q ¹ and Q ² are hydrogen atoms, except when A is -CH(CH ₃ )- and Q ¹ and Q ² are hydrogen atoms. . )
[3] The resin composition according to [1] or [2], wherein the resin (a1) has 3 or more aryl groups in its structure.
[4] The resin composition according to any one of [1] to [3], wherein the cyanate resin (A) contains an oligomer of resin (a1).
[5] The resin composition according to any one of [1] to [4], wherein the epoxy resin (B) contains an epoxy resin having an epoxy equivalent of 190 or more.
[6] The resin composition according to any one of [1] to [5], which contains the high dielectric filler (C) in an amount of 10% by mass or more and 95% by mass or less in 100% by volume of the resin composition.
[7] Further includes filler (D) (excluding high dielectric filler (C)),
The resin composition according to any one of [1] to [6], which contains the filler (D) in an amount of 1% by mass or more and 60% by mass or less in 100% by mass of the resin composition.
[8] The resin composition according to any one of [1] to [7], further comprising a maleimide compound (E).
[9] The resin composition according to any one of [1] to [8], further comprising coumaron resin (F).
[10] The resin composition according to any one of [1] to [9], which is used for forming electronic components in high-frequency devices.
[11] A cured product obtained by curing the resin composition according to any one of [1] to [10].
[12] A high dielectric constant material comprising the cured product according to [11].
[13] A carrier base material,
A resin film with a carrier, comprising a resin film made of the resin composition according to any one of [1] to [10], which is provided on the carrier base material.
[14] A prepreg formed by impregnating a fiber base material with the resin composition according to any one of [1] to [10].
[15] In [14], the fiber base material includes one or more selected from a glass fiber base material, a polyamide resin fiber, a polyester resin fiber, a polyimide resin fiber, and a fluororesin fiber. Prepreg as described.
[16] A dielectric substrate obtained by curing the resin composition according to any one of [1] to [10].
[17] An antenna substrate comprising the dielectric substrate according to [16].
[18] The prepreg according to [14] or [15],
a metal layer laminated on at least one surface of the prepreg;
A metal-clad laminate comprising:
[19] A printed wiring board comprising the prepreg molded body according to [14] or [15], and a wiring pattern provided on both surfaces or one side of the molded body.
[20] The printed wiring board according to [19],
A semiconductor device comprising: a semiconductor element mounted on the circuit layer of the printed wiring board or built into the printed wiring board.

According to the present invention, it is possible to provide a resin composition from which a cured product etc. excellent in high dielectric constant and low dielectric loss tangent can be obtained. In other words, the resin composition of the present invention can provide a cured product with an excellent balance of high dielectric constant and low dielectric loss tangent.

FIG. 2 is a cross-sectional view showing an example of the configuration of a resin film with a carrier in this embodiment. FIG. 2 is a top perspective view showing the microstrip antenna of this embodiment. FIG. 3 is a process cross-sectional view showing an example of the manufacturing process of the semiconductor device according to the present embodiment. 1 is an infrared absorption spectrum chart of cyanate resin A1 obtained in Synthesis Example 1. 1 is a GPC chart of cyanate resin A1 obtained in Synthesis Example 1.

Embodiments of the present invention will be described below with reference to the drawings. Note that in all the drawings, similar components are denoted by the same reference numerals, and descriptions thereof will be omitted as appropriate. Further, for example, "1 to 10" represents "1 or more" to "10 or less" unless otherwise specified.

The resin composition of this embodiment includes a cyanate resin (A) having a cyanate equivalent of 200 or more, an epoxy resin (B), and a high dielectric filler (C). The high dielectric filler (C) contains at least one selected from titanium oxide, barium titanate, strontium titanate, calcium titanate, and magnesium titanate.
In particular, the resin composition of the present embodiment contains a combination of a cyanate resin (A) and a high dielectric filler (C), thereby making it possible to obtain a cured product having an excellent high dielectric constant and low dielectric loss tangent.

[Cyanate resin (A)]
The cyanate resin (A) has a cyanate equivalent (g/eq) of 200 or more, preferably 205 or more, more preferably 210 or more. The upper limit is not particularly limited, but is 500 or less. "Cyanate equivalent (g/eq)" can be measured by ¹ H-NMR or GPC (gel permeation chromatography, standard substance: polystyrene equivalent).
As a result, the resin composition of the present embodiment can provide a cured product having an excellent low dielectric constant and low dielectric loss tangent.

From the viewpoint of the effects of the present invention, the cyanate resin (A) preferably contains a resin (a1) represented by the following general formula (1) and/or a prepolymer (a2) thereof, and at least partially contains a prepolymer. It is more preferable to include (a2).

In the general formula (1), A is a divalent group represented by the following general formula (1a), a substituted alkylene group having 1 to 5 carbon atoms, or an optionally substituted divalent cycloaliphatic group. Indicates the group.

In general formula (1a), X ¹ and X ² may be the same or different, and are an alkylene group having 1 to 5 carbon atoms substituted with an alkyl group having 1 to 3 carbon atoms, preferably an alkylene group having 1 to 2 carbon atoms. An alkylene group having 1 to 3 carbon atoms substituted with an alkyl group, more preferably an alkylene group having 1 carbon number substituted with an alkyl group having 1 carbon number. * indicates a bond.

In A of general formula (1), the substituted alkylene group having 1 to 5 carbon atoms is preferably a substituted alkylene group having 1 to 3 carbon atoms, more preferably a substituted alkylene group having 1 carbon number. It is.

The substituent of the substituted alkylene group having 1 to 5 carbon atoms is an alkyl group or aryl group having 1 to 3 carbon atoms, preferably an alkyl group or aryl group having 1 carbon number. Examples of the aryl group include phenyl group, tolyl group, xylyl group, naphthyl group, etc., and phenyl group is preferable.

In A of general formula (1), the optionally substituted divalent cycloaliphatic group is a monocyclic or polycyclic aliphatic ring having 3 to 10 carbon atoms. A divalent group derived from is preferred. Examples of the monocyclic or polycyclic aliphatic ring having 3 to 10 carbon atoms include cyclopropane, cyclobutane, cyclopentane, cyclohexane, cyclohexene, cycloheptane, cyclooctane, cyclononane, cyclodecane, spirobicyclopentane, bicyclo [2.1.0]pentane, bicyclo[3.2.1]octane, tricyclo[3.2.1.0 ^2,7 ]octane, spiro[3,4]octane, norbornane, norbornene, tricyclo[3. 3.1.1 ^3,7 ]decane (adamantane) and the like, preferably cyclopentane, cyclohexane, cyclohexene, more preferably cyclohexane.

Examples of the substituent of the optionally substituted divalent cycloaliphatic group include an alkyl group having 1 to 3 carbon atoms, preferably an alkyl group having 1 to 2 carbon atoms, and more preferably an alkyl group having 1 carbon number. It is.

Q ¹ and Q ² may be the same or different and represent a hydrogen atom or an optionally substituted aryl group. Examples of the aryl group include the same groups as mentioned above, and preferably a phenyl group. Examples of the substituent of the aryl group which may be substituted include an alkyl group having 1 to 3 carbon atoms, preferably an alkyl group having 1 to 2 carbon atoms, and more preferably an alkyl group having 1 carbon number.

The number of aryl groups contained in the structure of the resin (a1) is preferably 3 or more, more preferably 4 or more. The upper limit of the number of aryl groups is preferably 6 or less, more preferably 5 or less.

The cyanate resin (A) of the present embodiment is a compound in which A in general formula (1) is -C(CH ₃ ) ₂ - and Q ¹ and Q ² are hydrogen atoms, and a compound in which A in general formula (1) is -C(CH 3 ) 2 - and Q 1 and Q 2 are hydrogen atoms; ) in which A is -CH(CH ₃ )- and Q ¹ and Q ² are hydrogen atoms.

Specific examples of the resin (a1) include compounds represented by the following formulas, and one type or a combination of two or more types selected from these can be used.

Cyanate resin (A) can contain oligomers of resin (a1). Examples of oligomers include those having a triazine skeleton that is a trimer.

From the viewpoint of the effects of the present invention, the cyanate resin (A) is preferably 1% by mass or more and 50% by mass or less, more preferably 2% by mass or more and 40% by mass or less, even more preferably, in 100% by mass of the resin composition. It can be contained in an amount of 5% by mass or more and 30% by mass or less.

In the resin composition of the present embodiment, a cyanate resin (A) having a cyanate equivalent of 200 or more and a cyanate resin (other cyanate resin) having a cyanate equivalent of less than 200 can be used. From the viewpoint of the effects of the present invention, it is preferable to use cyanate resin (A) and other cyanate resins together.
Other cyanate resins may be used in combination, preferably in an amount of 5 to 50% by mass, more preferably 10 to 30% by mass, based on 100% by mass of the cyanate resin (A).

(Method for producing cyanate resin (A))
The resin (a1) contained in the cyanate resin (A) of this embodiment can be obtained by reacting a biphenyl-type phenol resin represented by the following general formula (2) with a cyanogen halide.

In general formula (2), A, Q ¹ and Q ² have the same meanings as in general formula (1).

The synthesis conditions and method for the resin (a1) of the present embodiment are not particularly limited, but for example, the biphenyl type phenol resin represented by the general formula (2) is dissolved in an organic solvent, and the halogenated cyanide compound is synthesized at a low temperature. is added dropwise, and then a basic compound such as a tertiary amine is added dropwise at a low temperature. Cyanogen halide and a basic compound such as a tertiary amine may be dropped alternately or simultaneously. Cyanate resin (A) can be obtained in high yield by proceeding with the reaction at a low temperature so that side reactions due to exothermic reactions do not occur. Low temperature refers to a temperature below which side reactions occur. Preferably, the temperature is 0°C or lower.

Under the above synthesis conditions, the charging ratio of biphenyl-type phenolic resin and cyanogen halide is preferably 1.5 to 3 cyanogen halide to 1 phenolic hydroxyl group of the biphenyl-type phenol resin.

The cyanogen halide compound is not particularly limited, but for example, cyanogen chloride, cyanogen bromide, etc. can be used.

The tertiary amine is not particularly limited, but may be any of alkylamine, arylamine, and cycloalkylamine, such as trimethylamine, triethylamine, methyldiethylamine, tripropylamine, tributylamine, and methyldibutylamine. .

The organic solvent used in the synthesis is not particularly limited, but includes, for example, ketone solvents, aromatic solvents, ether solvents, halogenated hydrocarbon solvents, alcohol solvents, aprotic solvents, nitrile solvents, There are ester solvents, hydrocarbon solvents, etc., and any of them can be used. One type or a combination of two or more of these can be used.

As a treatment after reacting the biphenyl type phenol resin represented by the general formula (2) with the cyanogen halide compound, the precipitated hydrogen chloride salt of a basic compound such as a tertiary amine is removed by filtration or washing with water. Furthermore, in order to remove amines, separation washing can be performed using an acidic aqueous solution. Dilute hydrochloric acid is mainly used. Finally, for dehydration, anhydrous sodium sulfate or the like is used. When washing with water, it is necessary to select a solvent that allows liquid separation.
Furthermore, by reacting the resin (a1) at a temperature of 80°C to 200°C for about 30 minutes to 5 hours, at least a part of the resin (a1) can be converted into a prepolymer, and the cyanate resin (A) containing the prepolymer (a2) can be made into a prepolymer. Obtainable.
By adjusting the above reaction temperature and time, the cyanate equivalent of the cyanate resin (A) can be adjusted.

[Epoxy resin (B)]
Examples of the epoxy resin (B) include biphenyl type epoxy resin; bisphenol A type epoxy resin, bisphenol F type epoxy resin, tetramethylbisphenol F type epoxy resin, bisphenol E type epoxy resin, bisphenol S type epoxy resin, hydrogenated bisphenol. A type epoxy resin, bisphenol AF type epoxy resin, bisphenol M type epoxy resin (4,4'-(1,3-phenylene diisopridiene) bisphenol type epoxy resin), bisphenol P type epoxy resin (4,4'- Bisphenol type epoxy resins such as (1,4-phenylene diisopridiene) bisphenol type epoxy resin), bisphenol Z type epoxy resin (4,4'-cyclohexydiene bisphenol type epoxy resin); Stilbene type epoxy resin; Phenol novolac Novolak type epoxy resins such as naphthol novolak epoxy resins, brominated phenol novolac type epoxy resins, cresol novolac type epoxy resins, novolak type epoxy resins having a condensed ring aromatic hydrocarbon structure; trihydroxyphenylmethane type epoxy resins , polyfunctional epoxy resins such as alkyl-modified trihydroxyphenonylmethane epoxy resins, tetraphenylolethane epoxy resins; phenol aralkyl epoxy resins such as phenol aralkyl epoxy resins containing a phenylene skeleton, phenol aralkyl epoxy resins containing a biphenylene skeleton; xylylene type epoxy resin, aralkyl type epoxy resin such as phenol aralkyl type epoxy resin having a biphenylene skeleton (biphenylaralkyl type epoxy resin); dihydroxynaphthalene type epoxy resin, naphthalene diol type epoxy resin, hydroxynaphthalene and/or dihydroxynaphthalene. Epoxy resins having a naphthalene skeleton such as difunctional to tetrafunctional naphthalene type epoxy resins, binaphthyl type epoxy resins, and naphthol aralkyl type epoxy resins obtained by glycidyl etherification of polymers; anthracene type epoxy resins; phenoxy type epoxy resins; Cyclopentadiene-type epoxy resin; Bridged cyclic hydrocarbon compound-modified phenol-type epoxy resin such as dicyclopentadiene-modified phenol-type epoxy resin; Norbornene-type epoxy resin; Adamantane-type epoxy resin; Fluorene-type epoxy resin, phosphorus-containing epoxy resin, alicyclic resin formula epoxy resin, aliphatic chain epoxy resin, bisphenol A novolac type epoxy resin, bixylenol type epoxy resin, glycidyl ester type epoxy resin, tert-butylcatechol type epoxy resin, spiro ring-containing epoxy resin, cyclohexanedimethanol type epoxy resin , naphthylene ether type epoxy resin, trimethylol type epoxy resin; heterocyclic epoxy resin such as triglycidyl isocyanurate, monoallyl diglycidyl isocyanurate; N,N,N',N'-tetraglycidyl metaxylene diamine, N , N,N',N'-tetraglycidylbisaminomethylcyclohexane, N,N-diglycidylaniline and other glycidylamine type epoxy resins; Polymers; examples include epoxy resins having a butadiene structure. These may be used alone or in combination of two or more.

The epoxy resin (B) can contain an epoxy resin having an epoxy equivalent of preferably 190 g/eq or more, more preferably 200 g/eq or more, still more preferably 210 g/eq or more. Thereby, the dielectric properties of the cured product of the resin composition can be improved by the optimum crosslinking density. The upper limit of the epoxy equivalent is not particularly limited, but may be, for example, 700 g/eq or less, 600 g/eq or less, or 500 g/eq or less. Thereby, the strength of the cured product of the resin composition can be improved.

In this embodiment, the epoxy resin (B) can contain one or more selected from the group consisting of biphenylaralkyl epoxy resin, dicyclopentadiene epoxy resin, and naphthol aralkyl epoxy resin from the viewpoint of dielectric properties. . Among these, it is preferable to include a biphenylaralkyl epoxy resin.

Furthermore, the epoxy resin (B) of the present embodiment may contain, in addition to the above-mentioned epoxy resin, an epoxy resin having an epoxy equivalent of less than 190 g/eq within a range that does not affect the effects of the present invention.

From the viewpoint of the effects of the present invention, the epoxy resin (B) is preferably 1% by mass or more and 50% by mass or less, more preferably 2% by mass or more and 30% by mass or less, even more preferably It can be contained in an amount of 3% by mass or more and 20% by mass or less.

[High dielectric filler (C)]
The high dielectric filler (C) contains at least one selected from titanium oxide, barium titanate, strontium titanate, calcium titanate, and magnesium titanate.
From the viewpoint of the effects of the present invention, the high dielectric filler (C) includes calcium titanate, barium titanate, barium zirconate titanate, strontium titanate, magnesium titanate, bismuth titanate, barium neodymium titanate, and barium titanate. It preferably contains tin and lead titanate, titanium oxide, magnesium oxide, alumina, tantalum pentoxide, and niobium pentoxide, and more preferably contains calcium titanate.

The average particle diameter of the high dielectric constant filler is, for example, preferably 0.1 μm or more and 50 μm or less, more preferably 0.3 μm or more and 20 μm or less, and still more preferably 0.5 μm or more and 10 μm or less.

The shape of the high dielectric filler is granular, amorphous, flake, etc., and high dielectric constant fillers of these shapes can be used in any ratio.

The content of the high dielectric filler is preferably 3 vol.% or more and 80 vol.% or less, more preferably 6 vol.% or more and 65 vol.% or less, and even more preferably 30 vol.% or more and 60 vol.% or less in 100 vol.% of the resin composition. is within the range of

Further, the content of the high dielectric filler is preferably 10% by mass or more and 95% by mass or less, more preferably 20% by mass or more and 90% by mass or less, even more preferably 30% by mass or more and 85% by mass, based on 100% by mass of the resin composition. % or less.

[Filler (D)]
The resin composition of the present embodiment may further contain a filler (D) other than the high dielectric filler (C).
Examples of the filler (D) include silicates such as talc, fired clay, unfired clay, mica, and glass; oxides such as titanium oxide, alumina, boehmite, silica, and fused silica; calcium carbonate, magnesium carbonate, and hydrocarbons; Carbonates such as talcite; hydroxides such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide; sulfates or sulfites such as barium sulfate, calcium sulfate, calcium sulfite; zinc borate, barium metaborate, boric acid Examples include borates such as aluminum, calcium borate, and sodium borate; nitrides such as aluminum nitride, boron nitride, silicon nitride, and carbon nitride; and titanates such as strontium titanate and barium titanate.

Among these, talc, alumina, glass, silica, mica, aluminum hydroxide, and magnesium hydroxide are preferred, and silica is particularly preferred. As the filler (D), one type of these may be used alone, or two or more types may be used in combination.

The lower limit of the average particle diameter of the filler (D) is not particularly limited, but may be, for example, 0.01 μm or more, or 0.05 μm or more. Thereby, workability can be improved. Further, the upper limit of the average particle diameter of the filler (D) is not particularly limited, but is preferably 5.0 μm or less, more preferably 2.0 μm or less, and even more preferably 1.0 μm or less. Thereby, the filler (D) in the resin composition can be uniformly dispersed.

The average particle diameter of the filler (D) can be determined by, for example, measuring the particle size distribution of the particles on a volume basis using a laser diffraction particle size distribution analyzer (LA-500, manufactured by HORIBA), and calculating the median diameter (D50) of the particles. It can be the diameter.

Further, the filler (D) is not particularly limited, but an inorganic filler having a monodisperse average particle size may be used, or an inorganic filler having a polydisperse average particle size may be used. Furthermore, one type or two or more types of inorganic fillers having a monodisperse and/or polydisperse average particle size may be used in combination.

It is preferable that the filler (D) contains silica particles. Silica particles may be spherical. The average particle diameter of the silica particles is not particularly limited, but may be, for example, 5.0 μm or less, 0.1 μm or more and 4.0 μm or less, or 0.2 μm or more and 2.0 μm or less. Thereby, the filling properties of the inorganic filler (C) can be further improved.

The content of filler (D) is preferably 1 volume% or more and 45 volume% or less, more preferably 5 volume% or more and 40 volume% or less, and still more preferably 10 volume% or more and 35 volume% or less in 100 volume% of the resin composition. The range is as follows.

From the viewpoint of the effect of the present invention and the viewpoint of handling property, the filler (D) is preferably 1% by mass or more and 60% by mass or less, more preferably 10% by mass or more and 55% by mass or less in 100% by mass of the resin composition. , more preferably in an amount of 20% by mass or more and 50% by mass or less.

[Maleimide compound (E)]
The resin composition of this embodiment can further include.
The maleimide group of the maleimide compound (E) has a five-membered ring planar structure, and the double bond of the maleimide group is highly polar, making it easy for intermolecular interactions. It exhibits strong intermolecular interactions with compounds that contain it, and can suppress molecular movement. Therefore, by including the maleimide compound, the resin composition of the present embodiment can lower the linear expansion coefficient of the resulting insulating layer, improve the glass transition temperature, and further improve the heat resistance.

As the maleimide compound, a maleimide compound having at least two maleimide groups in the molecule is preferred.
Examples of maleimide compounds having at least two maleimide groups in the molecule include 4,4'-diphenylmethane bismaleimide, m-phenylene bismaleimide, p-phenylene bismaleimide, 2,2-bis[4-(4-maleimide) phenoxy)phenyl]propane, bis-(3-ethyl-5-methyl-4-maleimidophenyl)methane, 4-methyl-1,3-phenylenebismaleimide, N,N'-ethylene dimaleimide, N,N'- Hexamethylene dimaleimide, bis(4-maleimidophenyl) ether, bis(4-maleimidophenyl) sulfone, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethane bismaleimide, bisphenol A diphenyl ether bismaleimide, etc. Examples include compounds having two maleimide groups in the molecule, and compounds having three or more maleimide groups in the molecule such as polyphenylmethane maleimide. One of these can be used alone, or two or more can be used in combination.

Among these maleimide compounds, 4,4'-diphenylmethane bismaleimide, 2,2-bis[4-(4-maleimidophenoxy)phenyl]propane, bis-(3-ethyl-5- Preferred are methyl-4-maleimidophenyl)methane, polyphenylmethanemaleimide, and bisphenol A diphenyl ether bismaleimide.

From the viewpoint of the effects of the present invention, the maleimide compound (E) is preferably contained in 100% by mass of the resin composition, preferably 1% by mass or more and 50% by mass or less, more preferably 2% by mass or more and 30% by mass or less, and even more preferably It can be contained in an amount of 3% by mass or more and 15% by mass or less.

[Kumaron resin (F)]
The resin composition of this embodiment can further contain coumaron resin (F).
Coumarone resin (F) refers to a (co)polymer with an average degree of polymerization of 4 to 8 that contains coumaron residues in its skeleton structure, and includes coumaron (1-benzofuran) polymer as well as indene (C ₉ H ₈ ), styrene (C ₈ H ₈ ), α-methylstyrene, methylindene and vinylruene. Among these, coumaron-indene copolymer and coumaron-indene-styrene copolymer are preferred.

The indene-coumarone resin contains a structural unit A derived from an inde monomer and a structural unit B derived from a coumaron monomer. The indene-coumarone resin may have structural units derived from other monomers. The indene-coumarone resin may have, for example, a structural unit C derived from a styrene monomer. It can have a repeating structure of these structural units.
Examples of the structural unit A derived from the indene monomer include those represented by the following general formula (M1).

In general formula (M1), R ¹ to R ⁷ are each independently hydrogen or an organic group having 1 to 3 carbon atoms.

Examples of the structural unit B derived from the coumaron-based monomer include those represented by the following general formula (M2).

In general formula (M2), R ^C is hydrogen or an organic group having 1 to 3 carbon atoms. R ^C may be the same or different.

Examples of the structural unit C derived from the styrene monomer include those represented by the following general formula (M3).

In general formula (M3), R ^S is hydrogen or an organic group having 1 to 3 carbon atoms. R ^S may be the same or different.
In the above general formulas (M1) to (M3), R ¹ to R ⁷ , R ^C and R ^S may contain atoms other than hydrogen and carbon in the structure of the organic group, for example.

Specific examples of atoms other than hydrogen and carbon include oxygen atoms, nitrogen atoms, sulfur atoms, phosphorus atoms, silicon atoms, fluorine atoms, and chlorine atoms. Atoms other than hydrogen and carbon may include one or more of the above specific examples.

In the above general formulas (M1) to (M3), R ¹ to R ⁷ , R ^C and R ^S each independently represent, for example, hydrogen or an organic group having 1 to 3 carbon atoms; is preferably an organic group, and more preferably hydrogen.

In the above general formulas (M1) to (M3), the organic groups constituting R ¹ to R ⁷ , R ^C and R ^S include alkyl groups such as methyl group, ethyl group and n-propyl group. groups; alkenyl groups such as allyl group and vinyl group; alkynyl groups such as ethynyl group; alkylidene groups such as methylidene group and ethylidene group; cycloalkyl groups such as cyclopropyl group; heterocyclic groups such as epoxy group and oxetanyl group, etc. Can be mentioned.

The indene-coumarone resin may include, among others, a copolymer of indene, coumaron, and styrene. Thereby, low dielectric properties can be improved.

Further, the indene-coumarone resin can have a reactive group in its molecule that reacts with the epoxy group of the epoxy resin. Thereby, low dielectric properties can be improved.
Examples of the above-mentioned reactive group include an OH group and a COOH group.
Further, the indene-coumarone resin may have an aromatic structure having a phenolic hydroxyl group inside or at the end.

The upper limit of the weight average molecular weight Mw of the indene-coumarone resin is, for example, preferably 4,000 or less, more preferably 2,000 or less, still more preferably 1,500 or less, and even more preferably 1,200 or less. preferable. This increases the compatibility between the indene-coumaron resin and the epoxy resin, and allows the indene-coumaron resin to be appropriately dispersed. On the other hand, the lower limit of the weight average molecular weight Mw of the indene-coumarone resin is, for example, preferably 400 or more, more preferably 500 or more, even more preferably 550 or more, and preferably 600 or more. More preferred. This allows the indene-coumarone resin to be appropriately dispersed in the resin composition.

The lower limit of the content of the indene-coumarone resin is, for example, 1% by mass or more, preferably 3% by mass or more, more preferably 5% by mass or more, when the entire resin composition of the present embodiment is 100% by mass. It is. Thereby, low dielectric properties and low water absorption properties can be improved. On the other hand, the upper limit of the content of the indene-coumarone resin is, for example, 15% by mass or less, preferably 12% by mass or less, more preferably 10% by mass, when the entire resin composition of the present embodiment is 100% by mass. % or less. This makes it possible to achieve a balance with other physical properties.

The melting point of the coumaron resin (F) is preferably 40°C to 120°C, and the melting point can be controlled by the molecular weight and degree of polymerization.

From the viewpoint of the effects of the present invention, the coumarone resin (F) is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.2% by mass or more and 5% by mass or less in 100% by mass of the resin composition. , more preferably in an amount of 0.5% by mass or more and 3% by mass or less.

[Coupling agent]
The resin composition of this embodiment can further contain a coupling agent.
Examples of coupling agents include known coupling agents such as various silane compounds such as epoxysilane, mercaptosilane, aminosilane, alkylsilane, ureidosilane, and vinylsilane, titanium compounds, aluminum chelates, and aluminum/zirconium compounds. can be used.

Examples of these include vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris(β-methoxyethoxy)silane, γ-methacryloxypropyltrimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxy Silane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane , vinyltriacetoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-anilinopropyltrimethoxysilane, γ-anilinopropylmethyldimethoxysilane, γ-[bis(β-hydroxyethyl) ]Aminopropyltriethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, N-β-(aminoethyl)-γ-aminopropyltriethoxysilane, N-β-(aminoethyl)- γ-aminopropylmethyldimethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-(β-aminoethyl)aminopropyldimethoxymethylsilane, N-(trimethoxysilylpropyl)ethylenediamine, N-(dimethoxymethylsilyl) isopropyl) ethylenediamine, methyltrimethoxysilane, dimethyldimethoxysilane, methyltriethoxysilane, N-β-(N-vinylbenzylaminoethyl)-γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, hexamethyldisilane , vinyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, 3-isocyanatepropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, 3-triethoxysilyl-N-(1,3-dimethyl-butylidene)propylamine Silane coupling agents such as hydrolysates of isopropyl triisostearoyl titanate, isopropyl tris(dioctylpyrophosphate) titanate, isopropyl tri(N-aminoethyl-aminoethyl) titanate, tetraoctyl bis(ditridecyl phosphite) titanate , tetra(2,2-diallyloxymethyl-1-butyl)bis(ditridecyl)phosphite titanate, bis(dioctylpyrophosphate)oxyacetate titanate, bis(dioctylpyrophosphate)ethylene titanate, isopropyltrioctanoyltitanate, isopropyldi Titanate coupling agents such as methacryl isostearoyl titanate, isopropyl tridodecylbenzenesulfonyl titanate, isopropyl isostearoyl diacryl titanate, isopropyl tri(dioctyl phosphate) titanate, isopropyl tricumylphenyl titanate, and tetraisopropyl bis(dioctyl phosphite) titanate. Can be mentioned. These may be used alone or in combination of two or more.

The content of the coupling agent in the resin composition is not particularly limited, but for example, when the entire resin composition is 100% by mass, it is preferably 0.01% by mass or more and 3% by mass or less, and 0.01% by mass or more and 3% by mass or less. More preferably, the content is 1% by mass or more and 2% by mass or less. By setting the content of the coupling agent to the above lower limit or more, the dispersibility of the inorganic filler (C) in the resin composition can be improved. Moreover, by controlling the content of the coupling agent to be equal to or less than the above upper limit, the fluidity of the resin composition can be made good and moldability can be improved.

[Curing catalyst]
The resin composition of this embodiment may also contain a curing catalyst.
A curing catalyst is sometimes called a curing accelerator. The curing catalyst is not particularly limited as long as it accelerates the curing reaction of the thermosetting resin, and any known curing catalyst can be used.

Specifically, phosphorus atom-containing compounds such as organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, and adducts of phosphonium compounds and silane compounds; 2-methylimidazole, 2- Imidazole such as phenylimidazole (imidazole curing accelerator); 1,8-diazabicyclo[5.4.0]undecene-7, benzyldimethylamine, etc. are examples of amidine and tertiary amine; quaternary of amidine and amine; Nitrogen atom-containing compounds such as salts can be mentioned, and only one type may be used, or two or more types may be used.

Among these, from the viewpoint of improving curability and obtaining a cured product with excellent mechanical strength such as bending strength, it is preferable to include compounds containing phosphorus atoms, such as tetra-substituted phosphonium compounds, phosphobetaine compounds, phosphine compounds and quinone compounds. It is more preferable to include compounds with latent properties such as adducts between phosphonium compounds and silane compounds, and tetra-substituted phosphonium compounds, adducts between phosphine compounds and quinone compounds, and adducts between phosphonium compounds and silane compounds. Adducts are particularly preferred.

By using the compound (C) represented by the general formula (1) in combination with a curing catalyst having latent properties, it is possible to obtain a cured product with excellent moldability and mechanical strength such as bending strength. .

Examples of the organic phosphine include primary phosphines such as ethylphosphine and phenylphosphine; secondary phosphines such as dimethylphosphine and diphenylphosphine; and tertiary phosphines such as trimethylphosphine, triethylphosphine, tributylphosphine and triphenylphosphine.

When a curing catalyst is used, its content is preferably 0.05 to 3% by weight, more preferably 0.08 to 2% by weight based on 100% by weight of the resin composition. By setting the value within such a numerical range, a sufficient curing accelerating effect can be obtained without excessively deteriorating other performances.

[Other ingredients]
In addition to the above-mentioned components, the resin composition of the present embodiment may optionally contain various curing agents such as phenolic resins, UV absorbers, leveling agents, mold release agents, colorants, dispersants, stress reducing agents, etc. It can contain the following ingredients.

<Resin composition>
The resin composition of this embodiment can be manufactured by uniformly mixing the above-mentioned components. Examples of the manufacturing method include a method in which raw materials having a predetermined content are sufficiently mixed using a mixer or the like, melt-kneaded using a mixing roll, kneader, extruder, etc., and then cooled and pulverized. The obtained resin composition may be made into tablets with a size and mass suitable for molding conditions, if necessary.

The usage form of the resin composition of the present embodiment is not particularly limited, but includes, for example, a resin film or a substrate made of the above resin composition, a resin film with a carrier in which the above resin film is provided on a carrier base material, and a resin film made of the above resin composition. Examples include prepreg made by impregnating a fiber base material with a material.

[Resin film with carrier]
Next, the carrier-attached resin film of this embodiment will be explained.
FIG. 1 is a cross-sectional view showing an example of the configuration of a carrier-attached resin film 1 in this embodiment.

As shown in FIG. 1, the carrier-attached resin film 1 of this embodiment may include a carrier base material 4 and a resin film 2 made of the resin composition described above and provided on the carrier base material 4. can. Thereby, the handling properties of the resin film 2 can be improved.
The carrier-attached resin film 1 may be in the form of a roll that can be rolled up, or may be in the form of a sheet such as a rectangular shape.

In this embodiment, as the carrier base material 4, for example, a polymer film, metal foil, etc. can be used. The polymer film is not particularly limited, but includes, for example, polyolefins such as polyethylene and polypropylene, polyesters such as polyethylene terephthalate and polybutylene terephthalate, polycarbonate, release papers such as silicone sheets, and heat-resistant materials such as fluorine resins and polyimide resins. Examples include thermoplastic resin sheets having the following properties. The metal foil is not particularly limited, but includes, for example, copper and \or copper-based alloys, aluminum and \or aluminum-based alloys, iron and \or iron-based alloys, silver and \or silver-based alloys, gold and gold-based alloys. , zinc and zinc-based alloys, nickel and nickel-based alloys, tin and tin-based alloys, and the like. Among these, a sheet made of polyethylene terephthalate is most preferred because it is inexpensive and its peel strength can be easily adjusted. This makes it easy to peel off from the carrier-attached resin film 1 with appropriate strength.

The lower limit of the thickness of the resin film 2 is not particularly limited, but may be, for example, 1 μm or more, 3 μm or more, or 5 μm or more. Thereby, the mechanical strength of the resin film 2 can be increased. On the other hand, the upper limit of the thickness of the resin film 2 is not particularly limited, but may be, for example, 500 μm or less, 300 μm or less, or 100 μm or less. This allows the high dielectric material to be made thinner.

The thickness of the carrier base material 4 is not particularly limited, but may be, for example, 10 to 100 μm or 10 to 70 μm. This is preferable because the handleability when manufacturing the carrier-attached resin film 1 is good.

The carrier-attached resin film 1 of this embodiment may be a single layer or a multilayer, and may include one or more types of resin film 2. When the resin sheet is multilayered, it may be composed of the same kind or different kinds. Further, the carrier-attached resin film 1 may have a protective film on the outermost layer side on the resin film 2.

In this embodiment, the method for forming the carrier-attached resin film 1 is not particularly limited, but for example, a coating film may be formed by applying a varnish-like resin composition onto the carrier base material 4 using various coater devices. A method can be used in which the solvent is removed by appropriately drying the coating film after forming the coating film.

(resin substrate)
The resin substrate of this embodiment can include an insulating layer made of a cured product of a resin composition. Such a resin substrate can have a structure that does not contain glass fiber, and can be used for printed wiring boards and antenna boards.

(prepreg)
The prepreg of this embodiment is obtained by impregnating a fiber base material with the above resin composition. For example, prepreg can be used as a sheet-like material obtained by impregnating a fiber base material with a resin composition and then semi-curing it. A sheet-like material having such a structure has excellent dielectric properties and various properties such as mechanical and electrical connection reliability under high temperature and high humidity conditions, and is suitable for manufacturing an insulating layer of a printed wiring board.

The method of impregnating the fiber base material with the resin composition is not particularly limited, but for example, the method of dissolving the resin composition in a solvent to prepare a resin varnish and immersing the fiber base material in the resin varnish, or using various coaters. Examples include a method of applying the resin varnish to the fiber base material, a method of spraying the resin varnish onto the fiber base material, and a method of laminating both sides of the fiber base material with the resin film made of a resin composition.

In this embodiment, the prepreg can be used, for example, to form an insulating layer in a build-up layer or an insulating layer in a core layer of a printed wiring board. When using prepreg to form an insulating layer in a core layer of a printed wiring board, for example, two or more sheets of prepreg are stacked and the resulting laminate is heated and cured to form an insulating layer for the core layer. You can also do that.

The above-mentioned fiber base materials include, but are not particularly limited to, glass fiber base materials such as glass woven fabrics and glass non-woven fabrics; polyamide resin fibers such as polyamide resin fibers, aromatic polyamide resin fibers, and wholly aromatic polyamide resin fibers; polyester resins Polyester resin fibers such as fibers, aromatic polyester resin fibers, and fully aromatic polyester resin fibers; Synthetic fiber base materials consisting of woven or nonwoven fabrics whose main component is either polyimide resin fibers or fluororesin fibers; Crafts Examples include paper base materials whose main components are paper, cotton linter paper, or mixed paper of linter and kraft pulp. Any one of these can be used. Among these, glass fiber base materials are preferred. Thereby, a resin substrate with low water absorption, high strength, and low thermal expansion can be obtained.

The thickness of the fiber base material is not particularly limited, but is preferably 5 μm or more and 150 μm or less, more preferably 10 μm or more and 100 μm or less, and even more preferably 12 μm or more and 90 μm or less. By using a fiber base material having such a thickness, handling properties during prepreg production can be further improved.

When the thickness of the fiber base material is less than or equal to the above upper limit value, the impregnation property of the resin composition in the fiber base material is improved, and occurrence of strand voids and a decrease in insulation reliability can be suppressed. In addition, through-holes can be easily formed using lasers such as carbon dioxide, UV, and excimer. Furthermore, when the thickness of the fiber base material is equal to or greater than the above lower limit, the strength of the fiber base material or prepreg can be improved. As a result, handling properties can be improved, prepreg production can be facilitated, and warping of the resin substrate can be suppressed.

The glass fiber base material is, for example, a glass formed from one or more types of glass selected from E glass, S glass, D glass, T glass, NE glass, UT glass, L glass, HP glass, and quartz glass. Fiber substrates are suitably used, with NE glass fiber substrates being preferred.

<Application>
The cured product obtained from the resin composition of the present embodiment, the carrier-attached resin film, the prepreg, etc. containing the cured product are excellent in high dielectric constant and low dielectric loss tangent in high frequency bands, and therefore can be used as high dielectric constant materials. Therefore, it is possible to achieve higher frequencies, shorten circuits, and downsize high-frequency devices such as communication equipment.

Such a resin composition can be used, for example, as a high dielectric constant material forming a part of a high frequency device selected from the group consisting of a microstrip antenna, a dielectric waveguide, and a multilayer antenna. Additionally, it can be used to form parts of metal clad laminates, printed wiring boards, and semiconductor packages.

The high frequency device of this embodiment includes a cured product obtained from a resin composition.
An example of a high frequency device will be described below.

<Microstrip antenna>
As shown in FIG. 2, the microstrip antenna 10 includes a dielectric substrate (antenna substrate) 12 formed by curing the above-mentioned resin composition, and a radiation conductor plate (radiation conductor plate) provided on one surface of the dielectric substrate 12. element) 14, and a ground conductor plate 16 provided on the other surface of the dielectric substrate 12.

The shape of the radiation conductor plate may be rectangular or circular. In this embodiment, an example using a rectangular radiation conductor plate 14 will be explained.

The radiation conductor plate 14 includes any one of a metal material, an alloy of metal materials, a cured product of metal paste, and a conductive polymer. Metal materials include copper, silver, palladium, gold, platinum, aluminum, chromium, nickel, cadmium lead, selenium, manganese, tin, vanadium, lithium, cobalt, titanium, and the like. Alloys include multiple metallic materials. The metal paste agent includes one obtained by kneading a powder of a metal material with an organic solvent and a binder. The binder includes epoxy resin, polyester resin, polyimide resin, polyamideimide resin, and polyetherimide resin. Conductive polymers include polythiophene polymers, polyacetylene polymers, polyaniline polymers, polypyrrole polymers, and the like.

As shown in FIG. 2, the microstrip antenna 10 of this embodiment has a radiation conductor plate 14 with a length L and a width W, and resonates at a frequency where L corresponds to an integral multiple of 1/2 wavelength. . When using the dielectric substrate 12 having a high dielectric constant as in this embodiment, the thickness h of the dielectric substrate 12 and the width W of the radiation conductor plate 14 are designed to be sufficiently small with respect to the wavelength.

The ground conductor plate 16 is a thin plate made of a highly conductive metal such as copper, silver, or gold. The thickness may be sufficiently thin relative to the center operating frequency of the antenna device, and may be about 1/50th to 1/1000th wavelength of the center operating frequency.

Power feeding methods for microstrip antennas include direct feeding methods such as back coaxial feeding and coplanar feeding, and electromagnetic coupling feeding methods such as slot coupled feeding and proximity coupled feeding.

In the rear coaxial power feeding, power can be fed from the back surface of the antenna to the radiation conductor plate 14 using a coaxial line or a connector that penetrates the ground conductor plate 16 and the dielectric substrate 12.
In coplanar power feeding, power can be fed to the radiation conductor plate 14 using a microstrip line (not shown) arranged on the same plane as the radiation conductor plate 14.

In the slot coupled power supply, another dielectric substrate (not shown) is provided to sandwich the ground conductor plate 16, and the radiation conductor plate 14 and the microstrip line are formed on separate dielectric substrates. The radiation conductor plate 14 is excited by electromagnetically coupling the radiation conductor plate 14 and the microstrip line through the slots formed in the ground conductor plate 16.

In the close-coupled power supply, the dielectric substrate 12 has a laminated structure, and includes a dielectric substrate on which the radiation conductor plate 14 is formed, and a dielectric substrate on which the strip conductor of the microstrip line and the ground conductor plate 16 are arranged. It is layered. The radiation conductor plate 14 is excited by extending the strip conductor of the microstrip line below the radiation conductor plate 14 and electromagnetically coupling the radiation conductor plate 14 and the microstrip line.

<Dielectric waveguide>
In this embodiment, the dielectric waveguide includes a dielectric formed by curing the resin composition of this embodiment, and a conductor film covering the surface of the dielectric. A dielectric waveguide confines electromagnetic waves in a dielectric (dielectric medium) and transmits them.
The conductor film can be made of metal such as copper, oxide high temperature superconductor, or the like.

<Multilayer antenna>
In this embodiment, the multilayer antenna includes a dielectric substrate (antenna substrate) formed by curing the resin composition of this embodiment.
Specifically, a multilayer antenna is a module in which a circuit including a large number of elements such as capacitors and inductors is printed and stacked on a dielectric substrate.

<Metal-clad laminate>
The laminate of this embodiment is a metal-clad laminate in which a metal layer is disposed on at least one surface of the cured prepreg.
Further, a method for producing a metal-clad laminate using prepreg is, for example, as follows.

Lay metal foil on both sides or one side of the outside of the prepreg or a laminate made of two or more sheets of prepreg, and bond them together under high vacuum conditions using a laminator or Bequerel machine, or bond them as is on the top and bottom of the outside of the prepreg. Layer metal foil on both sides or one side. Furthermore, when two or more sheets of prepreg are laminated, metal foil is placed on both or one side of the outermost top and bottom of the laminated prepreg. Next, a metal-clad laminate can be obtained by heating and press-molding the laminate in which the prepreg and metal foil are stacked. Here, during heating and pressure molding, it is preferable to continue pressurizing until the end of cooling.

The metals constituting the metal foil include, for example, copper, copper-based alloys, aluminum, aluminum-based alloys, silver, silver-based alloys, gold, gold-based alloys, zinc, zinc-based alloys, nickel, nickel-based alloys, tin, Examples include tin-based alloys, iron, iron-based alloys, Fe-Ni-based alloys such as Kovar (trade name), 42 alloy, Invar, and Super Invar, W, and Mo. Among these, copper or a copper alloy is preferable as the metal constituting the metal foil 105 because it has excellent conductivity, is easy to form a circuit by etching, and is inexpensive. That is, as the metal foil 105, copper foil is preferable.
Further, as the metal foil, a carrier-attached metal foil or the like can also be used.
The thickness of the metal foil is preferably 0.5 μm or more and 20 μm or less, more preferably 1.5 μm or more and 18 μm or less.

<Printed wiring board>
The printed wiring board of this embodiment includes an insulating layer made of the cured product of the resin film (cured product of the resin composition) described above.

In this embodiment, the cured resin film is, for example, a build-up layer of a normal printed wiring board, a build-up layer of a printed wiring board without a core layer, a build-up layer of a coreless board used for PLP, an MIS board. It can be used for build-up layers, etc. The insulating layer constituting such a build-up layer is also suitably used as the build-up layer constituting the printed wiring board in a large-area printed wiring board that is used to collectively create multiple semiconductor packages. be able to.

Furthermore, in this embodiment, a resin film made of a resin composition for forming an insulating film may be impregnated with glass fibers. Even in a semiconductor package using such a resin film as a build-up layer, the coefficient of linear expansion of the cured resin film can be lowered, so that package warpage can be sufficiently suppressed.

<Semiconductor package>
FIG. 3 is a process cross-sectional view showing an example of the manufacturing process of the semiconductor package 200 of this embodiment.

The semiconductor device (semiconductor package 200) of this embodiment can include a printed wiring board and a semiconductor element 240 mounted on a circuit layer of the printed wiring board or built into the printed wiring board.
Hereinafter, an outline of the manufacturing process of the semiconductor package 200 of this embodiment will be explained.

First, as shown in FIG. 3A, a core layer 100 including an insulating layer 102, a via hole 104, and a metal layer 108 is prepared. A via hole 104 is formed in the insulating layer 102. A metal layer (via) is buried in the via hole 104 . The metal layer may be covered with an electroless metal plating film 106. A metal layer 108 (a circuit layer having a predetermined circuit pattern) formed on the surface of the insulating layer 102 is electrically connected to a via formed in the via hole 104. In FIG. 3A, the metal layer 108 is formed on one surface of the core layer 100, but it may be formed on both surfaces.

Subsequently, a resin film 20 made of the resin composition described above is formed on one surface of the core layer 100 so as to embed the metal layer 108 therein. For example, the cover film 50 may be peeled off from the carrier-attached resin film 10 and the resin film 20 (insulating film) may be placed on the circuit forming surface of the core layer 100. A carrier base material 30 is provided on the surface of this resin film 20. The carrier substrate 30 may be separated from the resin film 20 at this point, or may be used as a mask.
Note that the resin film 20 may be a single layer of an insulating film, or may be composed of multiple layers of an insulating film and a primer layer.

Subsequently, an opening (not shown) is formed in the resin film 20 via the carrier base material 30. The opening can be formed to expose the metal layer 108. The method for forming the opening is not particularly limited, and for example, a method such as a laser processing method, an exposure and development method, or a blasting method can be used.

In this embodiment, after forming such an opening, the resin film 20 may be thermally cured. After that, the carrier base material 30 is peeled off.

Further, desmear processing can be performed as necessary. In the desmear treatment, the smear generated inside the opening can be removed and the surface of the resin film 20 can be roughened.

The desmear process described above can be performed, for example, as follows, although it is not particularly limited. First, the core layer 100 on which the resin film 20 is laminated is immersed in a swelling liquid containing an organic solvent, and then immersed in an alkaline permanganate aqueous solution to be neutralized and roughened. As the organic solvent, diethylene glycol monobutyl ether, ethylene glycol, etc. can be used. An example of such a swelling liquid is "Swelling Dip Securigant P" manufactured by Atotech Japan. As the permanganate, for example, potassium permanganate, sodium permanganate, etc. can be used. The temperature of the swelling liquid or permanganate aqueous solution may be, for example, 50°C or higher, or 100°C or lower. Further, the immersion time in the swelling liquid or permanganate aqueous solution may be, for example, 1 minute or more and 30 minutes or less.
In the step of desmearing, only the above wet desmearing process can be performed, but plasma irradiation may be performed in addition to the desmearing process.

Subsequently, an electroless metal plating film 202 is formed on the resin film 20 or a primer layer (not shown) formed on the resin film 20. An example of electroless plating method will be explained. For example, catalyst nuclei are provided on the surface of the underlayer. The catalyst nucleus is not particularly limited, but for example, noble metal ions or palladium colloid can be used. Subsequently, an electroless metal plating film 202 is formed by electroless plating using this catalyst nucleus as a core. For electroless plating, for example, a material containing copper sulfate, formalin, a complexing agent, sodium hydroxide, etc. can be used. Note that after electroless plating, a heat treatment at 100 to 250° C. can be performed to stabilize the plating film.

Subsequently, as shown in FIG. 3B, a resist 204 having a predetermined opening pattern (openings 206) may be formed on the electroless metal plating film 202. This opening pattern corresponds to, for example, a circuit pattern. The resist 204 is not particularly limited, and any known material can be used, and liquid or dry films can be used. In the case of forming fine wiring, a photosensitive dry film or the like can be used as the resist 204. An example using a photosensitive dry film will be explained. For example, a photosensitive dry film is laminated on the electroless metal plating film 202, the non-circuit forming area is exposed to light and photocured, and the unexposed area is dissolved and removed with a developer. A resist 204 is formed by leaving the cured photosensitive dry film.

Subsequently, as shown in FIG. 3C, an electrolytic metal plating layer 208 is formed at least inside the opening pattern of the resist 204 and on the electroless metal plating film 202 by electroplating. Electroplating is not particularly limited, but it is possible to use a known method used for ordinary printed wiring boards, such as passing an electric current through the plating solution while the board is immersed in a plating solution such as copper sulfate. Methods such as the following can be used. The electrolytic metal plating layer 208 may be a single layer or may have a multilayer structure. The material for the electrolytic metal plating layer 208 is not particularly limited, and for example, one or more of copper, copper alloy, 42 alloy, nickel, iron, chromium, tungsten, gold, and solder can be used.

Subsequently, as shown in FIG. 3D, the resist 204 is removed using an alkaline stripper, sulfuric acid, a commercially available resist stripper, or the like.

Subsequently, as shown in FIG. 3E, the electroless metal plating film 202 in the area (opening 210) other than the area where the electrolytic metal plating layer 208 is formed is removed. That is, using the electrolytic metal plating layer 208 as a mask, the underlying electroless metal plating film 202 is selectively removed. For example, the electroless metal plating film 202 can be removed by using soft etching (flash etching) or the like. Here, the soft etching process can be performed, for example, by etching using an etching solution containing sulfuric acid and hydrogen peroxide. Thereby, the metal layer 220 having a predetermined pattern can be formed. In this way, the metal layer 220 made up of the electroless metal plating film 202 and the electrolytic metal plating layer 208 is formed on the insulating layer made of the cured resin film of this embodiment by a semi-additive process (SAP). be able to.

Furthermore, build-up layers are laminated as necessary on the printed wiring board composed of the core layer 100 and the build-up layer described above, and by repeating the process of forming interlayer connections and circuits by a semi-additive process, multi-layered can do.
Through the above steps, the printed wiring board of this embodiment is obtained.

Subsequently, as shown in FIG. 3(f), a build-up layer is laminated as necessary on the obtained printed wiring board, and the steps of making interlayer connections and forming a circuit by a semi-additive process are repeated. Then, if necessary, a solder resist layer 230 is laminated on both sides or one side of the printed wiring board.

The method of forming the solder resist layer 230 is not particularly limited, but for example, a dry film type solder resist may be laminated, exposed and developed, or a printed liquid resist may be exposed and developed. This is done by a method of forming.

Subsequently, by performing a reflow process, the semiconductor element 240 is fixed onto the connection terminal, which is a part of the wiring pattern, via the solder bump 250. Thereafter, the semiconductor element 240, the solder bumps 250, and the like are covered and sealed with a sealing material layer 260.
Through the above steps, the semiconductor package 200 shown in FIG. 3(f) is obtained.

Although the embodiments of the present invention have been described above, these are merely examples of the present invention, and various configurations other than those described above can be adopted within a range that does not impair the effects of the present invention.

EXAMPLES The present invention will be explained in more detail with reference to Examples below, but the present invention is not limited thereto.

(Synthesis Example 1) Synthesis of Cyanate Resin A1 20 g of bisphenol M and 80 g of methyl isobutyl ketone (hereinafter referred to as MIBK) were charged and dissolved with stirring at room temperature. After dissolving, it was cooled to -10°C. Add 21.7 g (purity 95%, 0.195 mol) of cyanogen bromide (BrCN) at -10°C, and when the internal temperature reaches -15°C, add 20 g (0.198 mol) of trimethylamine (TEA). The mixture was added dropwise over 1 hour. After dropping, the mixture was further aged for 30 minutes, and further aged for about 2 hours to complete the reaction.
To the obtained solution, 100 ml of pure water was added to separate the layers, and 1100 ml of a 5% aqueous hydrogen chloride solution (HCl) was further added to separate the layers. Furthermore, it was washed twice with 110 g of 10% saline solution and separated, and washed twice with 100 ml of pure water.
After dehydrating the organic layer with anhydrous sodium sulfate, water was removed in vacuo to obtain 24 g of resin. The bisphenol M type cyanate resin thus obtained was analyzed by infrared absorption spectroscopy (IR Prestige-21 manufactured by Shimadzu Corporation, ATR method). An infrared absorption spectrum chart is shown in FIG. From FIG. 4, it was confirmed that the absorption band of phenolic hydroxyl group at 3300 cm ^-1 disappeared, and the absorption bands of cyanate group (-OCN group) of 2237 cm ^-1 and 2271 cm ^-1 were present. Next, it was prepolymerized by heating at a temperature of 170° C. for 2 hours to obtain cyanate resin A1 in which at least a portion of bisphenol M-type cyanate was prepolymerized.
In addition, cyanate resin A1 containing a prepolymer of bisphenol M type cyanate obtained in the above synthesis example was analyzed using GPC (gel permeation chromatography, HLC-8120GPC manufactured by Tosoh Corporation, standard substance: polystyrene equivalent). Ta. FIG. 5 shows a GPC chart. Molecular weight distribution was confirmed using a GPC chart. Furthermore, ¹ H-NMR measurement of cyanate resin A1 was performed.
From these, cyanate resin A1 (resin containing a prepolymer of "bisphenol M type cyanate represented by the following formula, cyanate equivalent: 355 g/eq)" was obtained.

[Cyanate resin (other than cyanate resin (A))]
・Cyanate resin 1: Novolak type cyanate resin, manufactured by Lonza, product name PT-30S (cyanate equivalent: 132 g/eq)

[Epoxy resin (B)]
・Epoxy resin 1: Phenol aralkyl type epoxy resin having a biphenylene skeleton (NC-3500, manufactured by Nippon Kayaku Co., Ltd.)
・Epoxy resin 2: Biphenylaralkyl epoxy resin (NC-3000-H, manufactured by Nippon Kayaku Co., Ltd.)

[High dielectric filler (C)]
・High dielectric filler 1: Calcium titanate (manufactured by Fuji Titanium Industries, trade name "Calcium titanate CT", average particle size 2 μm)
・High dielectric filler 2: Magnesium titanate (manufactured by Kyoritsu Materials Co., Ltd., trade name "MT-2", average particle size 1.5 μm)
・High dielectric filler 3: Siloxane-treated titanium oxide (manufactured by Sakai Chemical Co., Ltd.)

[Filler (D)]
・Inorganic filler 1: Silica particles (manufactured by Admatex, SC4050, average particle size 1.1 μm)

[Maleimide compound (E)]
・Maleimide compound 1: Biphenylaralkyl maleimide compound (manufactured by Nippon Kayaku Co., Ltd., MIR-3000-70T)

[Kumaron resin (F)]
・Kumaron resin 1: Indene-coumaron-styrene copolymer containing a phenol group at the end (manufactured by Nichiko Kagaku Co., Ltd., V-120S, weight average molecular weight: 950, hydroxyl value: 30 mgKOH/g)

[Coupling agent]
・Coupling agent 1: N-phenyl-γ-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM573)

[Curing accelerator]
・Curing accelerator 1: Curing accelerator represented by the following formula (tetraphenylphosphonium bis(naphthalene-2,3-dioxy)phenyl silicate)

<Examples 1 to 7 and Comparative Examples 1 to 2>
(Preparation of high dielectric resin composition)
Each component is dissolved or dispersed at the solid content percentage shown in Table 1, adjusted to a nonvolatile content of 70% by mass with methyl ethyl ketone, and stirred using a high-speed stirring device to form a varnish-like high dielectric resin composition (resin varnish). P) was prepared.
Note that the numerical values indicating the blending ratio of each component in Table 1 indicate the blending ratio (mass %) of each component with respect to the entire solid content of the high dielectric resin composition.
Next, each evaluation described below was performed. The results obtained are shown in Table 1.

In each Example and each Comparative Example, a resin film with a carrier, a prepreg, a printed wiring board, and a semiconductor package were created using the obtained resin varnish P (resin composition) in the following manner.

(Resin film with carrier: Preparation of resin sheet)
The obtained resin varnish P was coated on one side of a PET film with a thickness of 38 μm using a comma coater device so that the total thickness of the resin layer after drying was 30 μm, and this was dried in a drying device at 160 ° C. It was dried for 3 minutes to obtain a resin sheet (resin film with carrier) in which a resin film was laminated on a PET film.

(prepreg)
A glass woven fabric (cross type #1078, E glass, basis weight 47.5 g/m2) was impregnated with the obtained resin varnish using a coating device, and dried for 4 minutes using a hot air drying device at 150° C. to a thickness of 80 μm. prepreg was obtained.

(laminate)
A laminate with metal foil is made by superimposing ultra-thin copper foil (Mitsui Kinzoku Mining Co., Ltd., Microsyn FL, 1.5 μm) on both sides of the prepreg and heat-pressing it at a pressure of 3 MPa and a temperature of 225°C for 2 hours. Obtained. The thickness of the core layer (portion made of the resin substrate) of the obtained metal foil laminated plate was 0.080 mm.

(Preparation of printed wiring board)
After roughening the ultra-thin copper foil layer on the surface of the resin substrate with metal foil obtained in the previous section to a thickness of approximately 1 μm, a through hole of 80 μm in diameter for interlayer connection was formed using a carbon dioxide laser. Next, it was immersed in a swelling solution at 60°C (Swelling Dip Securigant P, manufactured by Atotech Japan Co., Ltd.) for 10 minutes, and then immersed in a potassium permanganate aqueous solution (manufactured by Atotech Japan Co., Ltd., Concentrate Compact CP) for 20 minutes at 80°C. After that, it was neutralized and the inside of the through hole was desmeared. Next, electroless copper plating was performed to a thickness of 0.5 μm, a resist layer for electrolytic copper plating was formed to a thickness of 18 μm, patterned copper plating was performed, and post-curing was performed by heating at a temperature of 150° C. for 30 minutes. Next, the plating resist was peeled off and the entire surface was flash-etched to obtain an inner layer core circuit board having a pattern of L/S=15/15 μm and having a residual copper content of 60%.
Next, the prepreg obtained in the example was placed on both sides of the inner layer core circuit board, and ultra-thin copper foil (Mitsui Kinzoku Mining Co., Ltd., Microsyn FL, 1.5 μm) was placed on top of the prepreg and heated at a pressure of 3 MPa and a temperature of 225°C. A multilayer laminate with metal foil was obtained by heat-pressing molding for 2 hours.
Next, blind vias were formed in the obtained multilayer laminate using a carbon dioxide laser. The inside of the via was immersed in a swelling solution at 60°C (Swelling Dip Securigant P, manufactured by Atotech Japan Co., Ltd.) for 10 minutes, and then a potassium permanganate aqueous solution (manufactured by Atotech Japan Co., Ltd., Concentrate Compact CP: Permanganate) at 80°C. After being immersed for 20 minutes in sodium concentration of 60 g/l and NaOH concentration of 45 g/l, the inside of the via was desmeared. After going through the steps of degreasing, catalyst application, and activation, an electroless copper plating film of about 0.5 μm is formed, a resist is formed, and a pattern of electroplated copper of 20 μm is formed using the electroless copper plating film as a power supply layer. The circuit has been processed. Next, annealing treatment was performed at 200° C. for 60 minutes using a hot air dryer, and then the power supply layer was removed by flash etching. Next, a solder resist layer was formed, and openings were formed to expose semiconductor element mounting pads and the like. Finally, a plating layer consisting of a 3 μm electroless nickel plating layer and a 0.1 μm electroless gold plating layer is formed on the circuit layer exposed from the solder resist layer, and the resulting board is 50 mm thick. It was cut into a size of 50 mm to obtain a printed wiring board.

(Production of semiconductor package)
For the semiconductor package, a semiconductor element (TEG chip, size 10 mm x 10 mm, thickness 0.1 mm) having solder bumps was mounted on the obtained printed wiring board by heat compression bonding using a flip chip bonder device. Next, after melting and bonding the solder bumps in an IR reflow oven, a liquid sealing resin (CRP-4152S, manufactured by Sumitomo Bakelite Co., Ltd.) was filled, and then the liquid sealing resin was cured to obtain a semiconductor package. The liquid sealing resin was cured at a temperature of 150° C. for 120 minutes. The solder bumps of the semiconductor element were formed from eutectic having a Sn/Pb composition. Finally, it was cut into pieces of 14 mm x 14 mm using a router to obtain semiconductor packages.

The carrier-attached resin film, printed wiring board, and semiconductor package obtained using the resin varnish P (resin composition) were evaluated based on the following evaluation items, and evaluated according to the criteria shown in Table 2. went. The results are shown in Table 1.

(1) Dielectric constant Dk, dielectric loss tangent Df
Four 30 μm thick resin films with a carrier were stacked together using copper foil and heated and pressed using a hot press at 225°C and 1 kgf/ ^mm2 for 2 hours to harden the resin film. I let it happen. Next, the copper foil of the obtained cured product was removed by etching to produce a cured product as a sample.
Regarding the obtained cured product, the dielectric constant and dielectric loss tangent at 10 GHz were measured using a cavity resonator method.

(2) Peel strength Peel strength measurement was performed in accordance with JISC6481. The sample used was the obtained laminate with metal foil coated with 30 μm of electroplated copper.

(3) Glass transition temperature This was carried out using a dynamic viscoelasticity apparatus in accordance with JISC-6481 (DMA method). The sample used was a laminate with metal foil etched to remove copper.

(4) Coefficient of Thermal Expansion The coefficient of thermal expansion was determined by preparing a 4 mm x 20 mm test piece using a TMA (thermomechanical analysis) device (manufactured by TA Instruments, Q400), at a temperature range of 30 to 300°C, The coefficient of linear expansion (CTE) was measured at 50 to 100°C in the second cycle under the conditions of 10°C/min and a load of 5g. The sample used was a laminate with metal foil etched to remove the copper.

(5) Laser processability The area around the bottom of the via hole of the above printed wiring board was observed using a scanning electron microscope (SEM), and the maximum smear length from the wall surface of the bottom of the via hole was measured from the obtained image. Smear removability was evaluated based on the maximum smear length according to standards. In addition, the length of plating penetration was observed.

(6) Formability Formability was evaluated according to standards by visually observing and cross-sectional observation of the embeddability into the inner layer pattern after etching the entire surface of the outer layer copper foil of the above-mentioned printed wiring board.

(7) Moisture absorption solder heat resistance All the copper foil of the metal foil laminated board except half of one side of a 50 mm x 50 mm square sample was removed by etching, and a pressure cooker tester (manufactured by ESPEC) was used at 121°C and 2 atm. After processing for a predetermined time, the samples were floated in a solder bath at 260° C. for 60 seconds, and the presence or absence of any abnormality in appearance was visually observed and evaluated according to standards.

(8) Insulation The through-hole insulation reliability was measured continuously at a distance of 0.1 mm between the through-hole walls of the above printed wiring board under the conditions of an applied voltage of 5.5 V, a temperature of 130 degrees Celsius, and a humidity of 85%, and in accordance with the standards. evaluated. Note that the test was terminated when the insulation resistance value became less than 10 6 Ω.

1 Resin film with carrier 2 Resin film 4 Carrier base material 10 Microstrip antenna 12 Dielectric substrate 14 Radiation conductor plate 16 Ground conductor plate 20 Resin film 30 Carrier base material 50 Cover film 100 Core layer 102 Insulating layer 104 Via hole 106 Electroless metal Plating film 108 Metal layer 200 Semiconductor package 202 Electroless metal plating film 204 Resist 206 Opening 208 Electrolytic metal plating layer 210 Opening 220 Metal layer 230 Solder resist layer 240 Semiconductor element 250 Solder bump 260 Encapsulant layer

Claims (20)

(A) a cyanate resin having a cyanate equivalent of 200 or more;
(B) an epoxy resin;
(C) at least one high dielectric filler selected from titanium oxide, barium titanate, strontium titanate, calcium titanate, and magnesium titanate;
A resin composition comprising: The resin composition according to claim 1, wherein the cyanate resin (A) contains a resin (a1) represented by the following general formula (1) and/or a prepolymer (a2) thereof.

(In general formula (1), A is a divalent group represented by the following general formula (1a), a substituted alkylene group having 1 to 5 carbon atoms, or an optionally substituted divalent cyclic aliphatic group) Indicates a family group.
The substituent of the substituted alkylene group having 1 to 5 carbon atoms is an alkyl group or aryl group having 1 to 3 carbon atoms.

(In general formula (1a), X ¹ and X ² may be the same or different and represent an alkylene group having 1 to 5 carbon atoms substituted with an alkyl group having 1 to 3 carbon atoms, and * indicates a bond. show.)
Q ¹ and Q ² may be the same or different and represent a hydrogen atom or an optionally substituted aryl group.
When A is -C(CH ₃ ) ₂ - and Q ¹ and Q ² are hydrogen atoms, except when A is -CH(CH ₃ )- and Q ¹ and Q ² are hydrogen atoms. . ) The resin composition according to claim 1 or 2, wherein the resin (a1) contains three or more aryl groups in its structure. The resin composition according to claim 1 or 2, wherein the cyanate resin (A) contains an oligomer of resin (a1). The resin composition according to claim 1 or 2, wherein the epoxy resin (B) contains an epoxy resin having an epoxy equivalent of 190 or more. The resin composition according to claim 1 or 2, wherein the high dielectric filler (C) is contained in an amount of 10% by mass or more and 95% by mass or less in 100% by mass of the resin composition. Furthermore, it contains a filler (D) (excluding the high dielectric filler (C)),
The resin composition according to claim 1 or 2, wherein the filler (D) is contained in an amount of 1% by mass or more and 60% by mass or less in 100% by mass of the resin composition. The resin composition according to claim 1 or 2, further comprising a maleimide compound (E). The resin composition according to claim 1 or 2, further comprising coumaron resin (F). The resin composition according to claim 1 or 2, which is used for forming electronic components in high-frequency devices. A cured product obtained by curing the resin composition according to claim 1 or 2. A high dielectric constant material comprising the cured product according to claim 11. a carrier base material;
A resin film with a carrier, comprising a resin film made of the resin composition according to claim 1 or 2, provided on the carrier base material. A prepreg formed by impregnating a fiber base material with the resin composition according to claim 1 or 2. The prepreg according to claim 14, wherein the fiber base material includes one or more selected from a glass fiber base material, a polyamide resin fiber, a polyester resin fiber, a polyimide resin fiber, and a fluororesin fiber. . A dielectric substrate obtained by curing the resin composition according to claim 1 or 2. An antenna substrate comprising the dielectric substrate according to claim 16. The prepreg according to claim 14 or 15,
a metal layer laminated on at least one surface of the prepreg;
A metal-clad laminate comprising: A printed wiring board comprising the prepreg molded body according to claim 14 or 15, and a wiring pattern provided on both sides or one side of the molded body. The printed wiring board according to claim 19,
A semiconductor device comprising: a semiconductor element mounted on the circuit layer of the printed wiring board or built into the printed wiring board.

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