JP2024004798A - 光電変換装置、光電変換システム - Google Patents

光電変換装置、光電変換システム Download PDF

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Publication number
JP2024004798A
JP2024004798A JP2022104637A JP2022104637A JP2024004798A JP 2024004798 A JP2024004798 A JP 2024004798A JP 2022104637 A JP2022104637 A JP 2022104637A JP 2022104637 A JP2022104637 A JP 2022104637A JP 2024004798 A JP2024004798 A JP 2024004798A
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JP
Japan
Prior art keywords
photoelectric conversion
conversion device
wiring
resistance element
semiconductor layer
Prior art date
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Pending
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JP2022104637A
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English (en)
Japanese (ja)
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JP2024004798A5 (https=
Inventor
和浩 森本
Kazuhiro Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2022104637A priority Critical patent/JP2024004798A/ja
Priority to US18/341,644 priority patent/US20240006456A1/en
Publication of JP2024004798A publication Critical patent/JP2024004798A/ja
Publication of JP2024004798A5 publication Critical patent/JP2024004798A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2022104637A 2022-06-29 2022-06-29 光電変換装置、光電変換システム Pending JP2024004798A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2022104637A JP2024004798A (ja) 2022-06-29 2022-06-29 光電変換装置、光電変換システム
US18/341,644 US20240006456A1 (en) 2022-06-29 2023-06-26 Device, system, and moving body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022104637A JP2024004798A (ja) 2022-06-29 2022-06-29 光電変換装置、光電変換システム

Publications (2)

Publication Number Publication Date
JP2024004798A true JP2024004798A (ja) 2024-01-17
JP2024004798A5 JP2024004798A5 (https=) 2025-06-20

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JP2022104637A Pending JP2024004798A (ja) 2022-06-29 2022-06-29 光電変換装置、光電変換システム

Country Status (2)

Country Link
US (1) US20240006456A1 (https=)
JP (1) JP2024004798A (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832030A (ja) * 1994-07-20 1996-02-02 Hitachi Ltd 抵抗素子及びこれが集積された半導体装置
US20090170237A1 (en) * 2007-12-26 2009-07-02 Weyerhaeuser Co. Printed organic logic circuits using an organic semiconductor as a resistive load device
JP2012256829A (ja) * 2010-12-09 2012-12-27 Semiconductor Energy Lab Co Ltd 光検出回路、入力装置、及び入出力装置
US20210066514A1 (en) * 2019-08-30 2021-03-04 Globalfoundries Singapore Pte. Ltd. Sensor and method of forming the same
JP2021086952A (ja) * 2019-11-28 2021-06-03 エイブリック株式会社 半導体装置の製造方法及び半導体装置
WO2021172216A1 (ja) * 2020-02-27 2021-09-02 ソニーセミコンダクタソリューションズ株式会社 受光素子、光学デバイス、及び電子機器
WO2022004088A1 (ja) * 2020-06-29 2022-01-06 ソニーセミコンダクタソリューションズ株式会社 半導体装置およびその製造方法
JP2022035262A (ja) * 2020-08-20 2022-03-04 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108475689B (zh) * 2016-10-18 2023-05-12 索尼半导体解决方案公司 传感器
JP7178819B2 (ja) * 2018-07-18 2022-11-28 浜松ホトニクス株式会社 半導体光検出装置
JP7309647B2 (ja) * 2020-03-24 2023-07-18 株式会社東芝 受光装置及び半導体装置
JPWO2022091607A1 (https=) * 2020-10-27 2022-05-05

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832030A (ja) * 1994-07-20 1996-02-02 Hitachi Ltd 抵抗素子及びこれが集積された半導体装置
US20090170237A1 (en) * 2007-12-26 2009-07-02 Weyerhaeuser Co. Printed organic logic circuits using an organic semiconductor as a resistive load device
JP2012256829A (ja) * 2010-12-09 2012-12-27 Semiconductor Energy Lab Co Ltd 光検出回路、入力装置、及び入出力装置
US20210066514A1 (en) * 2019-08-30 2021-03-04 Globalfoundries Singapore Pte. Ltd. Sensor and method of forming the same
JP2021086952A (ja) * 2019-11-28 2021-06-03 エイブリック株式会社 半導体装置の製造方法及び半導体装置
WO2021172216A1 (ja) * 2020-02-27 2021-09-02 ソニーセミコンダクタソリューションズ株式会社 受光素子、光学デバイス、及び電子機器
WO2022004088A1 (ja) * 2020-06-29 2022-01-06 ソニーセミコンダクタソリューションズ株式会社 半導体装置およびその製造方法
JP2022035262A (ja) * 2020-08-20 2022-03-04 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車

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