JP2024004794A - 光電変換装置、機器、積層体 - Google Patents

光電変換装置、機器、積層体 Download PDF

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Publication number
JP2024004794A
JP2024004794A JP2022104633A JP2022104633A JP2024004794A JP 2024004794 A JP2024004794 A JP 2024004794A JP 2022104633 A JP2022104633 A JP 2022104633A JP 2022104633 A JP2022104633 A JP 2022104633A JP 2024004794 A JP2024004794 A JP 2024004794A
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JP
Japan
Prior art keywords
photoelectric conversion
transistor
substrate
conversion device
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022104633A
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English (en)
Japanese (ja)
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JP2024004794A5 (https=
Inventor
真也 市野
Shinya Ichino
勉 丹下
Tsutomu Tange
和樹 大下内
Kazuki Oshitauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2022104633A priority Critical patent/JP2024004794A/ja
Priority to US18/342,473 priority patent/US20240006451A1/en
Publication of JP2024004794A publication Critical patent/JP2024004794A/ja
Publication of JP2024004794A5 publication Critical patent/JP2024004794A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022104633A 2022-06-29 2022-06-29 光電変換装置、機器、積層体 Pending JP2024004794A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2022104633A JP2024004794A (ja) 2022-06-29 2022-06-29 光電変換装置、機器、積層体
US18/342,473 US20240006451A1 (en) 2022-06-29 2023-06-27 Photoelectric conversion apparatus, equipment, layered structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022104633A JP2024004794A (ja) 2022-06-29 2022-06-29 光電変換装置、機器、積層体

Publications (2)

Publication Number Publication Date
JP2024004794A true JP2024004794A (ja) 2024-01-17
JP2024004794A5 JP2024004794A5 (https=) 2025-07-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022104633A Pending JP2024004794A (ja) 2022-06-29 2022-06-29 光電変換装置、機器、積層体

Country Status (2)

Country Link
US (1) US20240006451A1 (https=)
JP (1) JP2024004794A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025206236A1 (ja) * 2024-03-27 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024011562A (ja) * 2022-07-15 2024-01-25 キヤノン株式会社 光電変換装置、システム

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268295A (ja) * 2004-03-16 2005-09-29 Canon Inc 固体撮像素子
JP2005286168A (ja) * 2004-03-30 2005-10-13 Canon Inc 半導体装置及びそれを用いた固体撮像装置並びにそれらの製造方法
US20110267505A1 (en) * 2010-04-29 2011-11-03 Bart Dierickx Pixel with reduced 1/f noise
WO2012001939A1 (en) * 2010-07-02 2012-01-05 Canon Kabushiki Kaisha Solid-state imaging device
US20120008031A1 (en) * 2010-07-07 2012-01-12 Canon Kabushiki Kaisha Solid-state imaging apparatus and imaging system
WO2020080327A1 (ja) * 2018-10-17 2020-04-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子および電子機器

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268295A (ja) * 2004-03-16 2005-09-29 Canon Inc 固体撮像素子
JP2005286168A (ja) * 2004-03-30 2005-10-13 Canon Inc 半導体装置及びそれを用いた固体撮像装置並びにそれらの製造方法
WO2005096384A1 (en) * 2004-03-30 2005-10-13 Canon Kabushiki Kaisha Semiconductor apparatus, solid state image pickup device, and image pickup system
US20080224146A1 (en) * 2004-03-30 2008-09-18 Canon Kabushiki Kaisha Semiconductor Apparatus, Solid State Image Pickup Device Using the Same, and Method of Manufacturing Them
US20110267505A1 (en) * 2010-04-29 2011-11-03 Bart Dierickx Pixel with reduced 1/f noise
JP2011234366A (ja) * 2010-04-29 2011-11-17 Caeleste Cvba １／ｆノイズが減少した画素
WO2012001939A1 (en) * 2010-07-02 2012-01-05 Canon Kabushiki Kaisha Solid-state imaging device
JP2012015400A (ja) * 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
US20130105871A1 (en) * 2010-07-02 2013-05-02 Canon Kabushiki Kaisha Solid-state imaging device
US20120008031A1 (en) * 2010-07-07 2012-01-12 Canon Kabushiki Kaisha Solid-state imaging apparatus and imaging system
JP2012019058A (ja) * 2010-07-07 2012-01-26 Canon Inc 固体撮像装置および撮像システム
WO2020080327A1 (ja) * 2018-10-17 2020-04-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子および電子機器
EP3869563A1 (en) * 2018-10-17 2021-08-25 Sony Semiconductor Solutions Corporation Imaging element and electronic equipment
US20210343776A1 (en) * 2018-10-17 2021-11-04 Sony Semiconductor Solutions Corporation Image sensor and electronic apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025206236A1 (ja) * 2024-03-27 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置

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Publication number Publication date
US20240006451A1 (en) 2024-01-04

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