JP2024004794A - 光電変換装置、機器、積層体 - Google Patents

光電変換装置、機器、積層体 Download PDF

Info

Publication number
JP2024004794A
JP2024004794A JP2022104633A JP2022104633A JP2024004794A JP 2024004794 A JP2024004794 A JP 2024004794A JP 2022104633 A JP2022104633 A JP 2022104633A JP 2022104633 A JP2022104633 A JP 2022104633A JP 2024004794 A JP2024004794 A JP 2024004794A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
transistor
substrate
conversion device
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022104633A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024004794A5 (enExample
Inventor
真也 市野
Shinya Ichino
勉 丹下
Tsutomu Tange
和樹 大下内
Kazuki Oshitauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2022104633A priority Critical patent/JP2024004794A/ja
Priority to US18/342,473 priority patent/US20240006451A1/en
Publication of JP2024004794A publication Critical patent/JP2024004794A/ja
Publication of JP2024004794A5 publication Critical patent/JP2024004794A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022104633A 2022-06-29 2022-06-29 光電変換装置、機器、積層体 Pending JP2024004794A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2022104633A JP2024004794A (ja) 2022-06-29 2022-06-29 光電変換装置、機器、積層体
US18/342,473 US20240006451A1 (en) 2022-06-29 2023-06-27 Photoelectric conversion apparatus, equipment, layered structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022104633A JP2024004794A (ja) 2022-06-29 2022-06-29 光電変換装置、機器、積層体

Publications (2)

Publication Number Publication Date
JP2024004794A true JP2024004794A (ja) 2024-01-17
JP2024004794A5 JP2024004794A5 (enExample) 2025-07-10

Family

ID=89432639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022104633A Pending JP2024004794A (ja) 2022-06-29 2022-06-29 光電変換装置、機器、積層体

Country Status (2)

Country Link
US (1) US20240006451A1 (enExample)
JP (1) JP2024004794A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025206236A1 (ja) * 2024-03-27 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024011562A (ja) * 2022-07-15 2024-01-25 キヤノン株式会社 光電変換装置、システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025206236A1 (ja) * 2024-03-27 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Also Published As

Publication number Publication date
US20240006451A1 (en) 2024-01-04

Similar Documents

Publication Publication Date Title
JP7534902B2 (ja) 光電変換装置、撮像装置、半導体装置及び光電変換システム
TWI876698B (zh) 光檢測裝置及攝像裝置
US12142623B2 (en) Photoelectric conversion device having a substrate with pixels each including a photoelectric converter, a charge holding portion, and an amplifier unit
JP2024004794A (ja) 光電変換装置、機器、積層体
WO2021106748A1 (ja) 半導体装置および機器
JP2019041352A (ja) 撮像装置及び撮像システム
US20240128285A1 (en) Photoelectric conversion device and equipment
JP2024006956A (ja) 光電変換装置、光電変換装置の製造方法、機器
JP2023032549A (ja) 光電変換装置、光電変換システム、および移動体
US12272710B2 (en) Semiconductor device and equipment
US20230420468A1 (en) Photoelectric conversion device
US20250267964A1 (en) Apparatus and equipment
US20250380066A1 (en) Photoelectric conversion apparatus and equipment
JP2023178690A (ja) 光電変換装置、機器
JP2023178688A (ja) 光電変換装置、機器
US20230395622A1 (en) Photoelectric conversion apparatus and equipment
US20240038811A1 (en) Photoelectric conversion apparatus and equipment
US20240136370A1 (en) Photoelectric conversion apparatus, method of driving the apparatus, semiconductor substrate, and equipment
US20240038816A1 (en) Photoelectric conversion device and apparatus
US20250267970A1 (en) Photoelectric conversion apparatus
US20240347556A1 (en) Semiconductor apparatus and equipment
JP2023178689A (ja) 光電変換装置、光電変換システム
US20250386121A1 (en) Photoelectric conversion apparatus, photoelectric conversion system, and moving body
US20250280212A1 (en) Photoelectric conversion device and control method thereof
JP2024127607A (ja) 光電変換装置及び光電変換システム

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20221018

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20231213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250620

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250620