JP2023547258A - パッケージ構造及び電子機器 - Google Patents
パッケージ構造及び電子機器 Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 abstract description 15
- 238000000034 method Methods 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 18
- 230000000903 blocking effect Effects 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 8
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- 239000000463 material Substances 0.000 description 6
- 239000011343 solid material Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011344 liquid material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
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- 239000003822 epoxy resin Substances 0.000 description 2
- 230000009969 flowable effect Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/264—Mechanical constructional elements therefor ; Mechanical adjustment thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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Abstract
Description
本出願は、2020年10月30日に中国特許庁に提出され、出願番号が202011192715.3であり、発明の名称が「パッケージ構造及び電子機器」である中国特許出願の優先権を要求し、その全ての内容は、引用によりここに取り込まれる。
前記発光素子は、前記リフレクターと前記感光素子との間に位置し、前記発光素子の前記感光素子とは反対側に光取出し面を有し、前記リフレクターは、前記発光素子に向ける反射面を有し、前記発光素子の発する光は、前記反射面で前記パッケージ構造の外に反射され、前記感光素子は、前記パッケージ構造の外から反射されてくる光を受光する、パッケージ構造を提供している。
本出願は、2020年10月30日に中国特許庁に提出され、出願番号が202011192715.3であり、発明の名称が「パッケージ構造及び電子機器」である中国特許出願の優先権を要求し、その全ての内容は、引用によりここに取り込まれる。
前記発光素子は、前記リフレクターと前記感光素子との間に位置し、前記発光素子の前記感光素子とは反対側に光取出し面を有し、前記リフレクターは、前記発光素子に向ける反射面を有し、前記発光素子の発する光は、前記反射面で前記パッケージ構造の外に反射され、前記感光素子は、前記パッケージ構造の外から反射されてくる光を受光する、パッケージ構造を提供している。
Claims (11)
- 基板(100)と、前記基板(100)の同じ側に設けられている発光素子(200)、感光素子(300)、光透過パッケージ体(400)、及びリフレクター(600)と、を含み、前記光透過パッケージ体(400)は、前記発光素子(200)、前記感光素子(300)、及び前記リフレクター(600)を包み込み、
前記発光素子(200)は、前記リフレクター(600)と前記感光素子(300)との間に位置し、前記発光素子(200)の前記感光素子(300)とは反対側に光取出し面(210)を有し、前記リフレクター(600)は、前記発光素子(200)に向ける反射面(610)を有し、前記発光素子(200)の発する光は、前記反射面(610)で前記パッケージ構造の外に反射され、前記感光素子(300)は、前記パッケージ構造の外から反射されてくる光を受光する、パッケージ構造。 - 前記光取出し面(210)と前記基板(100)とがゼロではない夾角をなす、請求項1に記載のパッケージ構造。
- 前記パッケージ構造は、第1ローダー(500)をさらに含み、前記発光素子(200)は、前記第1ローダー(500)の前記感光素子(300)とは反対の面に設けられている、請求項1に記載のパッケージ構造。
- 前記第1ローダー(500)は、遮光構造である、請求項3に記載のパッケージ構造。
- 前記第1ローダー(500)には、凹溝が設けられ、前記発光素子(200)は、少なくとも一部が前記凹溝内に位置する、請求項3に記載のパッケージ構造。
- 前記発光素子(200)は、前記第1ローダー(500)により前記基板(100)に電気的に接続され、或いは、前記発光素子(200)は、第1リード線(700)により前記基板(100)に電気的に接続される、請求項3に記載のパッケージ構造。
- 前記感光素子(300)は、第1天面(310)を有し、前記光透過パッケージ体(400)は、第2天面(410)を有し、前記第1天面(310)と前記第2天面(410)とが同一平面にある、請求項1に記載のパッケージ構造。
- 前記パッケージ構造は、第2ローダー(800)をさらに含み、前記第2ローダー(800)が前記基板(100)に設けられ、前記感光素子(300)が前記第2ローダー(800)の前記基板(100)とは反対側に設けられている、請求項1に記載のパッケージ構造。
- 前記感光素子(300)は、前記第2ローダー(800)により前記基板(100)に電気的に接続され、或いは、前記感光素子(300)は、第2リード線により前記基板(100)に電気的に接続される、請求項8に記載のパッケージ構造。
- 前記基板(100)には、第1位置決め部(110)が設けられ、前記リフレクター(600)は、前記第1位置決め部(110)に設けられている、請求項1に記載のパッケージ構造。
- 回路基板と、前記回路基板に設けられているパッケージ構造と、を含み、前記パッケージ構造は、請求項1~10のいずれか一項に記載のパッケージ構造である、電子機器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011192715.3A CN112310062B (zh) | 2020-10-30 | 2020-10-30 | 封装结构及电子设备 |
CN202011192715.3 | 2020-10-30 | ||
PCT/CN2021/126317 WO2022089401A1 (zh) | 2020-10-30 | 2021-10-26 | 封装结构及电子设备 |
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JP2023547258A true JP2023547258A (ja) | 2023-11-09 |
JP7504297B2 JP7504297B2 (ja) | 2024-06-21 |
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US (1) | US20230261150A1 (ja) |
EP (1) | EP4239678A4 (ja) |
JP (1) | JP7504297B2 (ja) |
CN (1) | CN112310062B (ja) |
WO (1) | WO2022089401A1 (ja) |
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CN112310062B (zh) * | 2020-10-30 | 2022-09-09 | 维沃移动通信有限公司 | 封装结构及电子设备 |
CN114244984B (zh) * | 2021-12-16 | 2024-03-26 | 维沃移动通信有限公司 | 液态镜头模组及电子设备 |
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JP2001156325A (ja) | 1999-11-29 | 2001-06-08 | Citizen Electronics Co Ltd | フォトリフレクター |
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CN100470847C (zh) * | 2006-01-13 | 2009-03-18 | 崴强科技股份有限公司 | 影像感测芯片封装装置 |
JP4808660B2 (ja) | 2007-03-16 | 2011-11-02 | 株式会社フジクラ | 光送受信モジュールとその製造方法 |
JP2009038098A (ja) | 2007-07-31 | 2009-02-19 | Rohm Co Ltd | 受発光デバイス及びその製造方法 |
JP2009088433A (ja) | 2007-10-03 | 2009-04-23 | Citizen Electronics Co Ltd | フォトリフレクタ |
CN101158464B (zh) * | 2007-10-19 | 2010-06-09 | 友达光电股份有限公司 | 光源装置及其所构成的背光模组 |
JP2011096724A (ja) | 2009-10-27 | 2011-05-12 | Sharp Corp | 反射型光結合装置および電子機器 |
CN102880342B (zh) * | 2012-09-05 | 2018-04-06 | 惠州Tcl移动通信有限公司 | 一种距离传感器组件及移动通信设备 |
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KR102475651B1 (ko) | 2015-12-30 | 2022-12-09 | 엘지이노텍 주식회사 | 인체 착용장치 및 이의 동작 방법 |
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CN106453725B (zh) * | 2016-12-06 | 2023-04-07 | Oppo广东移动通信有限公司 | 一种终端 |
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CN112310062B (zh) * | 2020-10-30 | 2022-09-09 | 维沃移动通信有限公司 | 封装结构及电子设备 |
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WO2022089401A1 (zh) | 2022-05-05 |
CN112310062B (zh) | 2022-09-09 |
CN112310062A (zh) | 2021-02-02 |
US20230261150A1 (en) | 2023-08-17 |
EP4239678A1 (en) | 2023-09-06 |
EP4239678A4 (en) | 2024-05-01 |
JP7504297B2 (ja) | 2024-06-21 |
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