JP2023531194A5 - - Google Patents
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- Publication number
- JP2023531194A5 JP2023531194A5 JP2022577535A JP2022577535A JP2023531194A5 JP 2023531194 A5 JP2023531194 A5 JP 2023531194A5 JP 2022577535 A JP2022577535 A JP 2022577535A JP 2022577535 A JP2022577535 A JP 2022577535A JP 2023531194 A5 JP2023531194 A5 JP 2023531194A5
- Authority
- JP
- Japan
- Prior art keywords
- approximately
- crystalline material
- formula
- value
- material according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063040097P | 2020-06-17 | 2020-06-17 | |
| US63/040,097 | 2020-06-17 | ||
| PCT/EP2021/066028 WO2021254989A1 (en) | 2020-06-17 | 2021-06-15 | Inherently ferroelectric hf-zr containing films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023531194A JP2023531194A (ja) | 2023-07-21 |
| JP2023531194A5 true JP2023531194A5 (https=) | 2024-06-17 |
| JP7745573B2 JP7745573B2 (ja) | 2025-09-29 |
Family
ID=77050958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022577535A Active JP7745573B2 (ja) | 2020-06-17 | 2021-06-15 | 固有強誘電性Ｈｆ－Ｚｒ含有膜 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20230089523A1 (https=) |
| EP (1) | EP4168606A1 (https=) |
| JP (1) | JP7745573B2 (https=) |
| KR (1) | KR20230028323A (https=) |
| CN (1) | CN115516130A (https=) |
| IL (1) | IL298113A (https=) |
| TW (1) | TW202216606A (https=) |
| WO (1) | WO2021254989A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220352379A1 (en) * | 2021-04-29 | 2022-11-03 | Taiwan Semiconductor Manufacturing Company Limited | Ferroelectric memory devices having improved ferroelectric properties and methods of making the same |
| WO2023191981A1 (en) * | 2022-03-29 | 2023-10-05 | Tokyo Electron Limited | Bilayer stack for a ferroelectric tunnel junction and method of forming |
| US12274068B2 (en) * | 2022-05-09 | 2025-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming ferroelectric memory device |
| EP4541155A1 (en) * | 2022-07-20 | 2025-04-23 | Versum Materials US, LLC | Optimization of bottom electrode for the enhancement of ferroelectric performance in hafnia-based oxide with back-end-of-line (beol) compatible process |
| CN116133514A (zh) * | 2023-03-03 | 2023-05-16 | 湘潭大学 | 一种改善叠层氧化铪基铁电薄膜性能的方法及其叠层铁电薄膜 |
| TWI902171B (zh) * | 2024-03-14 | 2025-10-21 | 國立成功大學 | 利用具極化場之基板的鐵電薄膜生產方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2432363B (en) | 2005-11-16 | 2010-06-23 | Epichem Ltd | Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition |
| WO2007140813A1 (en) * | 2006-06-02 | 2007-12-13 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing |
| DE102007002962B3 (de) * | 2007-01-19 | 2008-07-31 | Qimonda Ag | Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators |
| CN107134487B (zh) * | 2017-06-06 | 2020-07-14 | 湘潭大学 | 一种基于氧化铪的铁电栅结构及其制备工艺 |
| WO2018231210A1 (en) * | 2017-06-14 | 2018-12-20 | Intel Corporation | Thin film ferroelectric materials and methods of fabrication thereof |
| US10833150B2 (en) * | 2018-07-11 | 2020-11-10 | International Business Machines Corporation | Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures |
| TWI809158B (zh) * | 2018-07-26 | 2023-07-21 | 日商東京威力科創股份有限公司 | 針對半導體元件形成晶體穩定的鐵電性鉿鋯基膜的方法 |
| US10707320B2 (en) * | 2018-10-19 | 2020-07-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Field effect transistors with ferroelectric dielectric materials |
| JP7582672B2 (ja) * | 2019-04-26 | 2024-11-13 | 国立大学法人東京科学大学 | 強誘電性膜の製造方法、強誘電性膜、及びその用途 |
-
2021
- 2021-06-15 EP EP21745914.8A patent/EP4168606A1/en active Pending
- 2021-06-15 IL IL298113A patent/IL298113A/en unknown
- 2021-06-15 WO PCT/EP2021/066028 patent/WO2021254989A1/en not_active Ceased
- 2021-06-15 JP JP2022577535A patent/JP7745573B2/ja active Active
- 2021-06-15 KR KR1020227046363A patent/KR20230028323A/ko active Pending
- 2021-06-15 TW TW110121655A patent/TW202216606A/zh unknown
- 2021-06-15 CN CN202180033920.1A patent/CN115516130A/zh active Pending
- 2021-06-15 US US17/907,107 patent/US20230089523A1/en active Pending
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