JP2023513225A5 - - Google Patents

Info

Publication number
JP2023513225A5
JP2023513225A5 JP2022548103A JP2022548103A JP2023513225A5 JP 2023513225 A5 JP2023513225 A5 JP 2023513225A5 JP 2022548103 A JP2022548103 A JP 2022548103A JP 2022548103 A JP2022548103 A JP 2022548103A JP 2023513225 A5 JP2023513225 A5 JP 2023513225A5
Authority
JP
Japan
Prior art keywords
plasma
sections
side wall
lined
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022548103A
Other languages
English (en)
Japanese (ja)
Other versions
JP7699600B2 (ja
JP2023513225A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2021/016267 external-priority patent/WO2021162895A1/en
Publication of JP2023513225A publication Critical patent/JP2023513225A/ja
Publication of JP2023513225A5 publication Critical patent/JP2023513225A5/ja
Application granted granted Critical
Publication of JP7699600B2 publication Critical patent/JP7699600B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2022548103A 2020-02-10 2021-02-02 傾斜制御のためのエッジプラズマ密度の調整可能性 Active JP7699600B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062972479P 2020-02-10 2020-02-10
US62/972,479 2020-02-10
PCT/US2021/016267 WO2021162895A1 (en) 2020-02-10 2021-02-02 Tunability of edge plasma density tilt control

Publications (3)

Publication Number Publication Date
JP2023513225A JP2023513225A (ja) 2023-03-30
JP2023513225A5 true JP2023513225A5 (https=) 2023-12-25
JP7699600B2 JP7699600B2 (ja) 2025-06-27

Family

ID=77291658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022548103A Active JP7699600B2 (ja) 2020-02-10 2021-02-02 傾斜制御のためのエッジプラズマ密度の調整可能性

Country Status (6)

Country Link
US (1) US12505991B2 (https=)
JP (1) JP7699600B2 (https=)
KR (1) KR20220137989A (https=)
CN (1) CN115066738A (https=)
TW (1) TWI902754B (https=)
WO (1) WO2021162895A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023055836A1 (en) * 2021-09-29 2023-04-06 Lam Research Corporation Edge capacitively coupled plasma chamber structure
CN116614926A (zh) * 2022-02-09 2023-08-18 中微半导体设备(上海)股份有限公司 等离子体约束系统及方法
WO2025122449A1 (en) * 2023-12-07 2025-06-12 Lam Research Corporation Liner assembly for substrate processing chambers
US12614701B2 (en) 2024-05-15 2026-04-28 Applied Materials, Inc. Substrate processing chamber with plasma confinement

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3458912B2 (ja) 1994-11-15 2003-10-20 アネルバ株式会社 プラズマ処理装置
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6547979B1 (en) * 2000-08-31 2003-04-15 Micron Technology, Inc. Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
US8608851B2 (en) 2005-10-14 2013-12-17 Advanced Micro-Fabrication Equipment, Inc. Asia Plasma confinement apparatus, and method for confining a plasma
JP5231038B2 (ja) * 2008-02-18 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
US8540844B2 (en) 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8360003B2 (en) * 2009-07-13 2013-01-29 Applied Materials, Inc. Plasma reactor with uniform process rate distribution by improved RF ground return path
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
TWI502617B (zh) * 2010-07-21 2015-10-01 應用材料股份有限公司 用於調整電偏斜的方法、電漿處理裝置與襯管組件
US20140053984A1 (en) * 2012-08-27 2014-02-27 Hyun Ho Doh Symmetric return liner for modulating azimuthal non-uniformity in a plasma processing system
US9123661B2 (en) 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
KR101670457B1 (ko) * 2014-11-28 2016-10-31 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
US9963782B2 (en) * 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
JP6523714B2 (ja) * 2015-03-05 2019-06-05 東京エレクトロン株式会社 プラズマ処理装置
US10763082B2 (en) * 2016-03-04 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber of plasma system, liner for plasma system and method for installing liner to plasma system
JP7017306B2 (ja) * 2016-11-29 2022-02-08 株式会社日立ハイテク 真空処理装置

Similar Documents

Publication Publication Date Title
JP2023513225A5 (https=)
TWI880942B (zh) 基板處理設備
KR100984776B1 (ko) 전기적 우회 요소를 이용하여 감소된 전기적 스큐를 갖는플라즈마 반응기
JP4430253B2 (ja) ガス分配プレートを備えたチャンバ及び装置とガス分配プレートの熱応力を最小限にする方法
KR20210015641A (ko) 기판 처리 장치
EP0637055B1 (en) Plasma processing apparatus
JP3723783B2 (ja) プラズマ処理装置
CN106898534B (zh) 等离子体约束环、等离子体处理装置与基片处理方法
CN111326389A (zh) 一种电容耦合等离子体刻蚀设备
CN111883410B (zh) 批次型衬底处理设备
JP2022512490A5 (https=)
JP2003277936A (ja) Ｃｖｄ装置
KR102605240B1 (ko) 플라스마 처리 장치 및 플라스마 처리 방법
JP2024501093A (ja) 摩耗補償閉じ込めリング
JP2000286242A (ja) プラズマ処理装置
TW201724167A (zh) 等離子體處理裝置
JP2003203869A (ja) プラズマ処理装置
CN101151703A (zh) 等离子体处理设备
CN218123349U (zh) 一种反应腔保护壳及等离子刻蚀设备
JP5648189B2 (ja) 高周波スパッタリング装置
WO2024043138A1 (ja) プラズマ処理装置
EP0202904B1 (en) Plasma reactor with removable insert
JPH062952B2 (ja) プラズマｃｖｄ装置及びプラズマｃｖｄによる成膜方法
TW202125691A (zh) 下電極組件及使用其的等離子體處理器
CN117133623B (zh) 一种用于刻蚀腔废气排放的流道结构及其刻蚀机