JP2023503448A - 超高密度量子ドットカラーコンバータ - Google Patents
超高密度量子ドットカラーコンバータ Download PDFInfo
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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Abstract
Description
高温に耐えるように有機粒子を選択することができる。好適な高温ポリマーの例は、テトラフルオロエチレン(ETFE)、エチレンクロロトリフルオロエチレンECTFE、ポリテトラフルオロエチレン(PTFE)、ペルフルオロアルコキシアルカン(PFA)、ポリベンズイミダゾール(PBI)、ポリアミドイミド(PAI)、ポリエーテルイミド(PEI)、ポリエーテルケトン(PEK)、ポリエーテルエーテルケトン(PEEK)、ポリエーテルケトンケトン(PEKK)、ポリフェニレンスルフィド(PPS)、フタロニトリル、ポリスルホン(PSU)、ポリエーテルスルホン(PES)、ポリフタラミド(PPA)、PTFE高温ナイロン、および上記のいずれかの組み合わせを含む。
図3A~図3Jは、異なる寸法を有し、異なるピッチにあるサブピクセルのアレイを透過した青色光を示す。図3A~図3Eに示されたサブピクセルは、12.5μmのピッチで9.6μmの直径を有する(図3A)、6μmのピッチで3.6μmの直径を有する(図3B)、3.3μmのピッチで1.4μmの直径を有する(図3C)、2.8μmのピッチで1.4μmの直径を有する(図3D)、および2.3μmのピッチで1.4μmの直径を有する(図3E)。
図4は、500倍の倍率で、2.8μmのピッチで1.4μmの直径を有するサブピクセルウィンドウを示す。
図5A~図5Cは、それぞれ、青色、緑色、および赤色のサブピクセルを示す。サブピクセルは、9.6μmの直径および2μmの厚さを有する。図5Aは、下にあるLEDアレイからのサブピクセルアレイを通る青色光の透過を示す。図5Bは、青色LED光を照射した量子ドットからの緑色発光を示す。青色光から緑色光への量子変換効率は74%、青色光の漏れは12%であった。図5Cは、青色LED光を照射した量子ドットからの赤色発光を示す。青色光から赤色光への量子変換効率は57%、青色光の漏れは21%であった。
図6A~図6Cは、2.8μmの直径のサブピクセル(図6A~図6B)および2μmの深さを有する3.3μmの直径のサブピクセル(図6C)のアレイを示す。倍率は200倍と500倍である(インセット)。
図7は、サブピクセル空洞を有する色変換層の例を示す。構造は、Al2O3基板701、0.1μm厚のSi3N4リフトオフ層702、500nm厚のSiO2層703、アルミニウム706によって分離されたサブピクセル705を含む2μm厚の層704、およびSiO2の0.2μm厚の層を含む。サブピクセル795は、量子ドット含有組成物が充填され、1.3μmのピッチで0.7μm幅である。
図8A~図8Fは、カラーコンバータを製造するために使用されるステップの実施例を示す。図8Aは、Al2O3ウエハ802、Si3N4の0.1μm厚の層803、およびSiO2の0.5μm厚の層804を含む、基板801の詳細を示す。図8Bでは、アルミニウム層805が基板801上に堆積されている。レジスト806は、アルミニウム層805、およびクロムエッチマスク807に選択的に堆積されている。図8Cは、サブピクセル808を画定するためのエッチング後の構造を示す。図8Dに示されるように、特定のサブピクセルは、赤色発光量子ドット組成物809が充填される。次いで、赤色サブピクセルは、図8Eに示されるように、SiO2などの保護層810でコーティングされ、緑色発光量子ドット組成物811は、図8Fに示されるように、選択されたサブピクセルに堆積される。青色透過サブピクセル812には、透過性材料を充填することができ、色変換層は、パッシベーション層(図示せず)でコーティングされる。
Claims (30)
- 超高密度発光ダイオードアレイ用のカラーコンバータであって、
基板と、
色変換層と、を含み、前記色変換層が、
前記基板の上にあるサブピクセルの第1のグループを含み、
前記サブピクセルの第1のグループが、第1の複数の量子ドットを含み、
第1の複数のサブピクセルが、第1の波長範囲内で光を放出し、
各サブピクセルが独立して、
30μm3未満の体積と、
1μm~3μmの厚さと、
5μm未満のピッチと、
10体積%~50体積%の、前記体積内の前記量子ドットの密度と、を含み、体積%は、量子ドットの総体積から任意のリガンドまたは他の介在材料を引いたものを前記サブピクセルの総体積で割ったものに基づく、カラーコンバータ。 - 各サブピクセルが、2:1~10:1のアスペクト比(高さ:幅)を特徴とする、請求項1に記載のカラーコンバータ。
- 追加の複数のサブピクセルをさらに含み、各サブピクセルにつき1つが、着色されたピクセルを構成し、前記追加の複数のサブピクセルが、追加の波長範囲内の光を透過するように構成されている、請求項1に記載のカラーコンバータ。
- 前記追加の複数のサブピクセルのうちの1つが、量子ドット色変換材料を含まず、追加の複数のサブピクセルを提供するためにポンプ波長を通過させるように構成されている、請求項3に記載のカラーコンバータ。
- 前記第1の波長範囲内の光、第2の波長範囲内の光、および第3の波長範囲内の光が、前記カラーコンバータを特徴付ける色域の3つの色頂点を画定する、請求項1に記載のカラーコンバータ。
- 前記色変換層が複数のピクセルを含み、前記複数のピクセルの各々が1~5個のサブピクセルを含む、請求項1に記載のカラーコンバータ。
- 前記色変換層が、100~50,000のPPIを特徴とする、請求項1に記載のカラーコンバータ。
- 前記ピクセルの第1のグループの各サブピクセル、および前記ピクセルの第2のグループの各ピクセルが、66°未満の発光円錐を特徴とする、請求項1に記載のカラーコンバータ。
- 各サブピクセルが複数の変換強化粒子を含む、請求項1に記載のカラーコンバータ。
- 各サブピクセルが、結合剤を含む、請求項1に記載のカラーコンバータ。
- 前記複数の量子ドットが間隔リガンドを含む、請求項1に記載のカラーコンバータ。
- 前記複数の量子ドットが反応性リガンドを含む、請求項1に記載のカラーコンバータ。
- 前記反応性リガンドが、結合剤、粒子、側壁、相補的反応性リガンド、ならびに/または量子ドットのリガンドおよび/もしくはコーティングと化学的に反応するように構成されている、請求項12に記載のカラーコンバータ。
- 前記サブピクセルの第1のグループおよび前記サブピクセルの第2のグループの各々が、405nm~475nmの波長範囲内の光で照射されたときに70%超の色変換効率を示し、色純度は、前記サブピクセルを通る前記ポンプ光の透過が10%未満であることに対応して、90%超である、請求項1に記載のカラーコンバータ。
- 405nm~475nmの波長範囲の青色光で照射されると、前記サブピクセルの第1のグループが、515nm~565nmの緑色波長範囲で発光することができ、前記サブピクセルの第2のグループが、565nm~650nmの赤色波長範囲内で発光することができる、請求項1に記載のカラーコンバータ。
- 前記サブピクセルの第1のグループと、前記サブピクセルの第2のグループとが交互配置されている、請求項1に記載のカラーコンバータ。
- 前記色変換層の下、および/または前記色変換層の上に、パッシベーション層をさらに含む、請求項1に記載のカラーコンバータ。
- 前記色変換層の下、および/または前記色変換層の上に選択的波長反射層をさらに含む、請求項1に記載のカラーコンバータ。
- 前記色変換層の下に光学的解離層をさらに含む、請求項1に記載のカラーコンバータ。
- 前記色変換層の上に構造化層をさらに含み、前記構造化層が前記サブピクセルの第1のグループおよび前記第2によって放出される光を集束させるように構成されている、請求項15に記載のカラーコンバータ。
- 光学ディスプレイであって、
発光ダイオードアレイと、
前記発光ダイオードアレイの上にありかつ前記発光ダイオードアレイに光学的に結合されている請求項1に記載のカラーコンバータと、を含む、光学ディスプレイ。 - 前記発光ダイオードアレイの下にありかつ前記発光ダイオードアレイに電気的に相互接続された回路層を含む、請求項21に記載の光学ディスプレイ。
- 請求項21に記載の光学ディスプレイを含む電子デバイス。
- 色変換層の作製方法であって、
複数の空洞を画定するために基板上にアルミニウム層を堆積させることと、
前記複数の空洞の第1の部分内に第1の色変換材料を堆積させることであって、前記第1の色変換材料が第1の複数の量子ドットを含む、堆積させることと、
前記複数の空洞の第2の部分内に第2の色変換材料を堆積させることであって、前記第2の色変換材料が第2の複数の量子ドットを含む、堆積させることと、を含み、
前記複数の空洞の各々が、
30μm3未満の体積と、
1μm~3μmの厚さと、
5μm未満のピッチと、
10体積%~50体積%の、前記体積内の量子ドットの密度と、を含み、体積%はサブピクセルの総体積に基づく、方法。 - 前記複数の空洞の第3の部分内に色透過性材料を堆積させて、
カラーコンバータを特徴付ける色域の3つの色頂点を提供することをさらに含む、請求項24に記載の方法。 - 第2の色変換材料のアレイを堆積した後、重合反応を開始することをさらに含む、請求項24に記載の方法。
- 前記第1の色変換のアレイを堆積させることが、ゲル透過によって堆積させることを含む、請求項24に記載の方法。
- 堆積が、複数の量子ドットを含むインクを前記空洞内に塗布することを含む、請求項24に記載の方法。
- 堆積させることが、量子ドットを含む自由流動組成物を前記空洞内に堆積させることを含む、請求項24に記載の方法。
- 請求項24に記載の方法により作製された、カラーコンバータ。
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CN114946033A (zh) | 2022-08-26 |
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US11121289B2 (en) | 2021-09-14 |
US20210151637A1 (en) | 2021-05-20 |
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