JP2023502631A - 正孔チャネル半導体トランジスタ、その製造方法および応用 - Google Patents
正孔チャネル半導体トランジスタ、その製造方法および応用 Download PDFInfo
- Publication number
- JP2023502631A JP2023502631A JP2022528141A JP2022528141A JP2023502631A JP 2023502631 A JP2023502631 A JP 2023502631A JP 2022528141 A JP2022528141 A JP 2022528141A JP 2022528141 A JP2022528141 A JP 2022528141A JP 2023502631 A JP2023502631 A JP 2023502631A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- channel
- channel layer
- hole
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 230000004888 barrier function Effects 0.000 claims abstract description 75
- 238000000034 method Methods 0.000 claims abstract description 36
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 24
- 239000004047 hole gas Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 452
- 230000006911 nucleation Effects 0.000 claims description 39
- 238000010899 nucleation Methods 0.000 claims description 39
- 239000002356 single layer Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 11
- 229910002601 GaN Inorganic materials 0.000 description 55
- 238000010586 diagram Methods 0.000 description 34
- 239000000463 material Substances 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 150000004767 nitrides Chemical class 0.000 description 18
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000004969 ion scattering spectroscopy Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010549 co-Evaporation Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
本開示は、2020年4月13日に中国専利局に提出された、出願番号が202010288958.0であり、名称が「正孔チャネル半導体トランジスタ、その製造方法および応用」である中国出願に基づいて優先権を主張し、その内容のすべては本開示に参照として取り込まれる。
基板を用意し、その上表面に対してエッチングを行って、略平行する第1表面および第2表面と、第1表面および第2表面のそれぞれと繋がる垂直表面とを有する階段状構造を形成することと、
前記垂直表面を核として前記第2表面の制限下で、前記第2表面に垂直に非平面チャネル層を側方にエピタキシャル成長させることと、
前記チャネル層に障壁層を形成して、同時に前記障壁層と前記チャネル層との界面で二次元正孔ガスおよび移動不能なバックグラウンド負電荷、および/または前記二次元電子ガスおよび移動不能なバックグラウンド正電荷を形成することとを含み、
前記垂直表面の格子が、六方対称性を有する。
任意選択で、前記第1チャネル層を覆う、<0001>方向における前記障壁層を除去することをさらに含む。
上に、略平行する第1表面および第2表面と、第1表面および第2表面のそれぞれと繋がる垂直表面とを有する階段状構造が形成され、前記垂直表面の格子が、六方対称性を有する、基板と、
前記垂直表面を核として前記第2表面の制限下で、前記第2表面に垂直に側方にエピタキシャル成長した非平面チャネル層と、
前記チャネル層に形成された障壁層とを備え、前記障壁層と前記チャネル層との界面で二次元正孔ガスおよび/または前記二次元電子ガスが形成されている。
1つの基板を備え、前記基板の上表面に垂直に非平面のチャネル層がエピタキシャル成長されており、
前記チャネル層が、第1チャネル層と第2チャネル層とを含み、
前記チャネル層に障壁層(130)が形成され、前記障壁層(130)と前記チャネル層との界面で二次元正孔ガスおよび/または前記二次元電子ガスが形成されている。
ここで、必須でない細部で本開示の内容が複雑になることを避けるため、図面において、本開示の案に深く関わっているデバイス構造のみを示し、いくつかの細部を省略する。
なお、以下、図面を用いて本開示の内容を説明したが、本開示の内容は、説明された実施形態に限定されない。本開示の内容において、実施可能である限り、異なる実施形態の間で特徴を置き換えまたは組合せてもよく、または、1つの実施形態において1つまたは複数の特徴を省略してもよい。
下記の具体的な実施形態について図面を参照することができ、図面は、本開示の一部を示すとともに例示的な実施形態を示す。なお、保護しようとする主題の範囲から逸脱しない限り、他の実施形態により構造の形成および/または論理の変更を行ってもよい。また、方向および位置(例えば、上、下、頂部、底部など)は、図面に示される特徴を理解するためのものにすぎず、限定的に以下の具体的な実施形態のみを採用することを意味しない。
本開示の明細書および特許請求の範囲に使用される用語について、特に断りがない限り、「一」、「1つ」および「前記」は、複数のものを指すことも可能である。なお、本明細書に使用される用語の「および/または」は、該当列挙項目のうちの1つまたは複数の項目の任意の1つおよびそのすべての可能な組合せを含む。
Claims (15)
- 基板を用意し、その上表面に対してエッチングを行って、略平行する第1表面および第2表面と、第1表面および第2表面のそれぞれと繋がる垂直表面とを有する階段状構造を形成することと、
前記垂直表面を核として前記第2表面の制限下で、前記第2表面に垂直に非平面チャネル層を側方にエピタキシャル成長させることと、
前記チャネル層に障壁層を形成して、同時に前記障壁層と前記チャネル層との界面で二次元正孔ガスおよび移動不能なバックグラウンド負電荷、および/または前記二次元電子ガスおよび移動不能なバックグラウンド正電荷を形成することとを含み、
前記垂直表面の格子が、六方対称性を有する
ことを特徴とする非平面正孔チャネル半導体トランジスタの製造方法。 - 前記垂直表面に核生成層を形成し、前記核生成層を前記垂直表面の一部の表面に形成させ、または前記核生成層を前記垂直表面の全部の表面に形成させることをさらに含む
ことを特徴とする請求項1に記載の方法。 - 前記核生成層を核として第1チャネル層を側方にエピタキシャル成長させることをさらに含む
ことを特徴とする請求項2に記載の方法。 - 前記第1チャネル層を核としてN型埋め込み層を側方にエピタキシャル成長させることをさらに含む
ことを特徴とする請求項3に記載の方法。 - 前記第1チャネル層または前記埋め込み層を核として第2チャネル層を側方にエピタキシャル成長させることをさらに含む
ことを特徴とする請求項4に記載の方法。 - 上に、略平行する第1表面および第2表面と、第1表面および第2表面のそれぞれと繋がる垂直表面とを有する階段状構造が形成され、前記垂直表面の格子が、六方対称性を有する、基板と、
前記垂直表面を核として前記第2表面の制限下で、前記第2表面に垂直に側方にエピタキシャル成長した非平面チャネル層と、
前記チャネル層に形成された障壁層とを備え、前記障壁層と前記チャネル層との界面で二次元正孔ガスおよび/または前記二次元電子ガスが形成されている
ことを特徴とする非平面正孔チャネル半導体トランジスタ。 - 前記基板の前記垂直表面以外の他の表面に第1絶縁層が形成されている
ことを特徴とする請求項6に記載の非平面正孔チャネル半導体トランジスタ。 - 前記基板の前記垂直表面に核生成層が形成されている
ことを特徴とする請求項6または7に記載の非平面正孔チャネル半導体トランジスタ。 - 前記核生成層の外部にバッファ層がさらに形成され、前記バッファ層が、単層または多層構造を有する
ことを特徴とする請求項8に記載の非平面正孔チャネル半導体トランジスタ。 - 基板を備え、前記基板の上表面に垂直に非平面のチャネル層がエピタキシャル成長されており、
前記チャネル層が、第1チャネル層と第2チャネル層とを含み、
前記チャネル層に障壁層(130)が形成され、前記障壁層(130)と前記チャネル層との界面で二次元正孔ガスおよび/または前記二次元電子ガスが形成されている
ことを特徴とする非平面正孔チャネル半導体デバイス。 - 第3チャネル層をさらに備え、前記第3チャネル層が、非意図的にドープされたGaNまたは真性GaN、またはInGaNであり、或いは、前記第3チャネル層が、ドーピング濃度の比較的に低いGaNである
ことを特徴とする請求項10に記載の非平面正孔チャネル半導体デバイス。 - 請求項6~9のいずれか1項に記載の非平面正孔チャネル半導体トランジスタを備える
ことを特徴とする無線周波数デバイス。 - 請求項10または11に記載の非平面正孔チャネル半導体デバイスを備える
ことを特徴とする無線周波数デバイス。 - 請求項6~9のいずれか1項に記載の非平面正孔チャネル半導体トランジスタを備える
ことを特徴とする電気パワーデバイス。 - 請求項10または11に記載の非平面正孔チャネル半導体デバイスを備える
ことを特徴とする電気パワーデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010288958.0A CN111816702A (zh) | 2019-04-12 | 2020-04-13 | 一种空穴沟道半导体晶体管、制造方法及其应用 |
CN202010288958.0 | 2020-04-13 | ||
PCT/CN2021/078960 WO2021208624A1 (zh) | 2020-04-13 | 2021-03-03 | 一种空穴沟道半导体晶体管、制造方法及其应用 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023502631A true JP2023502631A (ja) | 2023-01-25 |
JP7397982B2 JP7397982B2 (ja) | 2023-12-13 |
Family
ID=81000043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022528141A Active JP7397982B2 (ja) | 2020-04-13 | 2021-03-03 | 正孔チャネル半導体トランジスタ、その製造方法および応用 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220384633A1 (ja) |
EP (1) | EP3944337A4 (ja) |
JP (1) | JP7397982B2 (ja) |
KR (1) | KR20220078677A (ja) |
WO (1) | WO2021208624A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116072531B (zh) * | 2023-03-07 | 2023-08-22 | 徐州致能半导体有限公司 | 一种在半导体功能区侧面制作电极的方法 |
CN116960174B (zh) * | 2023-09-19 | 2024-01-23 | 广东致能科技有限公司 | 一种p沟道半导体器件及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110224019A (zh) * | 2019-04-12 | 2019-09-10 | 广东致能科技有限公司 | 一种半导体器件及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013109884A1 (en) * | 2012-01-18 | 2013-07-25 | Iqe Kc, Llc | Iiii -n- based double heterostructure field effect transistor and method of forming the same |
EP2765611A3 (en) * | 2013-02-12 | 2014-12-03 | Seoul Semiconductor Co., Ltd. | Vertical gallium nitride transistors and methods of fabricating the same |
CN104269433B (zh) * | 2014-09-05 | 2017-03-22 | 电子科技大学 | 具有复合沟道层的氮化镓基增强型异质结场效应晶体管 |
US9786775B2 (en) * | 2015-11-27 | 2017-10-10 | Epistar Corporation | Normally-off high electron mobility transistors and fabrication methods thereof |
US11018253B2 (en) * | 2016-01-07 | 2021-05-25 | Lawrence Livermore National Security, Llc | Three dimensional vertically structured electronic devices |
CN109524460B (zh) * | 2017-09-19 | 2022-05-17 | 世界先进积体电路股份有限公司 | 高空穴移动率晶体管 |
CN108831922B (zh) * | 2018-06-05 | 2021-05-18 | 大连芯冠科技有限公司 | 具有GaAs和GaN复合沟道的GaN HEMT器件及制备方法 |
CN110634867B (zh) * | 2019-09-10 | 2023-08-18 | 英诺赛科(珠海)科技有限公司 | 半导体装置及其制造方法 |
-
2021
- 2021-03-03 WO PCT/CN2021/078960 patent/WO2021208624A1/zh unknown
- 2021-03-03 JP JP2022528141A patent/JP7397982B2/ja active Active
- 2021-03-03 US US17/594,846 patent/US20220384633A1/en active Pending
- 2021-03-03 EP EP21786315.8A patent/EP3944337A4/en active Pending
- 2021-03-03 KR KR1020227015501A patent/KR20220078677A/ko not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110224019A (zh) * | 2019-04-12 | 2019-09-10 | 广东致能科技有限公司 | 一种半导体器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20220384633A1 (en) | 2022-12-01 |
WO2021208624A1 (zh) | 2021-10-21 |
EP3944337A4 (en) | 2022-07-13 |
EP3944337A1 (en) | 2022-01-26 |
KR20220078677A (ko) | 2022-06-10 |
JP7397982B2 (ja) | 2023-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20230047052A1 (en) | Semiconductor device, method for manufacturing same, and use thereof | |
JP7397982B2 (ja) | 正孔チャネル半導体トランジスタ、その製造方法および応用 | |
JP7450064B2 (ja) | フィン状半導体デバイス、その製造方法および応用 | |
TWI787556B (zh) | 半導體裝置及其製造方法 | |
WO2020206960A1 (zh) | 一种高电子迁移率晶体管(hemt)及其制造方法 | |
TWI789797B (zh) | 半導體器件、包括其的互補型半導體器件、射頻設備和電力功率設備及調節半導體器件分布電場的方法 | |
US20230335631A1 (en) | Semiconductor device and manufacturing method therefor | |
JP7450719B2 (ja) | Iii族窒化物半導体集積回路構造、その製造方法および使用 | |
TWI772706B (zh) | 半導體器件、半導體器件的製造方法及電子裝置 | |
JP7497446B2 (ja) | 半導体デバイス、その製造方法および応用 | |
CN212033030U (zh) | 一种半导体器件及电子装置 | |
CN214336720U (zh) | 一种半导体器件及电子装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220516 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230419 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230719 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230913 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230929 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231201 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7397982 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |