JP2023094575A - 炭化ケイ素粉末、これを用いて炭化ケイ素インゴットを製造する方法並びに炭化ケイ素ウエハ - Google Patents
炭化ケイ素粉末、これを用いて炭化ケイ素インゴットを製造する方法並びに炭化ケイ素ウエハ Download PDFInfo
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- JP2023094575A JP2023094575A JP2022197511A JP2022197511A JP2023094575A JP 2023094575 A JP2023094575 A JP 2023094575A JP 2022197511 A JP2022197511 A JP 2022197511A JP 2022197511 A JP2022197511 A JP 2022197511A JP 2023094575 A JP2023094575 A JP 2023094575A
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- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 522
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- C01B32/00—Carbon; Compounds thereof
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- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
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- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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Abstract
Description
単結晶炭化ケイ素の塊が炭化ケイ素原料として提供された。前記単結晶炭化ケイ素の塊は、約99.9999%以上の純度を有する炭化ケイ素粉末が、約2300℃の温度で昇華し、種結晶に蒸着して形成されてもよい。
製造例1と実質的に同様であり、下記の表1及び表2と同様のエッチング液及びエッチング気体を用いた。
その後、製造例1で製造された炭化ケイ素粉末をグラファイト坩堝本体の内部に装入した。前記粉末の上部に炭化ケイ素種結晶及び種結晶ホルダを配置した。このとき、炭化ケイ素種結晶(4H SiC単結晶、6インチ)のC面(0001)が坩堝の下部に向かうように通常の方法で固定した。また、坩堝蓋と種結晶ホルダが黒鉛で一体に製造して形成され、前記坩堝蓋及び前記種結晶ホルダは、いずれも円板状を有する。このとき、前記坩堝蓋の厚さは、約20mmであり、前記坩堝蓋の直径は、約210mmであり、前記種結晶ホルダの厚さは、約3mmであり、前記種結晶ホルダの直径は、約180mmであった。
下記の表3に示されたように、前記炭化ケイ素粉末が変更されたことを除いては、その他工程は、実施例1と同様であった。
1.炭化ケイ素粉末の純度
製造例による炭化ケイ素粉末の純度は、グロー放電質量分析によって測定された。
製造例で製造された炭化ケイ素粉末は、光学顕微鏡(Nikon社 Eclipse LV150 Microscope)によって撮影されて、イメージ分析プログラム(IMT社のi-solution)によって分析された。
XPS装備名/製造社:K-Alpha+/ThermoFisher Scientific
測定条件
1)X-ray source:Monochromated Al X-Ray sources(Al Kα line:1486.6eV)
2)X-Ray power:12kV、10mA
3)Sampling area:400um(diameter)
4)Narrow scan:pass energy 40eV、step size 0.05eV
5)Vacuum:3×10-9mbar
6)Calibration:No
7)Flood gun is used for charge compensation ON
Ar Ion etching:2keV、1500sec、raster size2×2mm
前記XPS分析と同様、製造されたウエハの表面酸素濃度が測定された。
実施例及び比較例で製造された炭化ケイ素ウエハ上に、約10μm厚さのエピタキシャル層が形成された。その後、約3922本の電力半導体デバイスが形成されて、各々の電力半導体の不良有無がチェックされた。
12 炭化ケイ素インゴット
20 坩堝本体
21 坩堝蓋
22 種結晶ホルダ
30 炭化ケイ素粉末
42 反応チャンバ
40 断熱材
50 加熱手段
Claims (11)
- 炭素及びケイ素を含み、
X線光電子分光法により測定されたO1s/C1sが、0.28以下である、
炭化ケイ素粉末。 - 前記X線光電子分光法により測定された表面のO1s/Si2pが、0.39以下である、
請求項1に記載の炭化ケイ素粉末。 - 前記X線光電子分光法により測定された表面の表面酸素比率が、13atom%以下である、
請求項2に記載の炭化ケイ素粉末。 - 前記X線光電子分光法により測定された表面のN1s/C1sが、0.018以下である、
請求項3に記載の炭化ケイ素粉末。 - エッチング時間による酸素の濃度変化が2atom%/100s以下である深さにおける酸素濃度は、5atom%以下である、
請求項4に記載の炭化ケイ素粉末。 - 前記X線光電子分光法により測定された表面のZn2p/C1sが、0.023以下である、
請求項1に記載の炭化ケイ素粉末。 - 前記X線光電子分光法により測定された表面のMg1s/C1sが、0.005以下である、
請求項6に記載の炭化ケイ素粉末。 - 炭化ケイ素を含む原料を提供する段階;
前記原料を粉末化する段階;及び、
前記原料に含まれている不純物を除去する段階を含み、
X線光電子分光法により測定された表面のO1s/C1sが、0.28以下である、
炭化ケイ素粉末の製造方法。 - 前記不純物を除去する段階は、前記原料の表面をエッチングする段階を含む、
請求項8に記載の炭化ケイ素粉末の製造方法。 - 前記原料の表面をエッチングする段階において、フッ酸及び硝酸を含むエッチング液が用いられる、
請求項9に記の炭化ケイ素粉末の製造方法。 - 互いに対向するSi面及びC面を含み、
前記Si面において、X線光電子分光法により測定された酸素比率が、14atom%以下である、
炭化ケイ素ウエハ。
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