JP2023084241A - 垂直共振器型発光素子 - Google Patents

垂直共振器型発光素子 Download PDF

Info

Publication number
JP2023084241A
JP2023084241A JP2021198295A JP2021198295A JP2023084241A JP 2023084241 A JP2023084241 A JP 2023084241A JP 2021198295 A JP2021198295 A JP 2021198295A JP 2021198295 A JP2021198295 A JP 2021198295A JP 2023084241 A JP2023084241 A JP 2023084241A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
multilayer reflector
nitride semiconductor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021198295A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023084241A5 (enExample
Inventor
孝信 赤木
Takanobu Akagi
大 倉本
Masaru Kuramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP2021198295A priority Critical patent/JP2023084241A/ja
Priority to CN202280080814.3A priority patent/CN118355574A/zh
Priority to US18/716,893 priority patent/US20250047073A1/en
Priority to PCT/JP2022/043105 priority patent/WO2023106080A1/ja
Publication of JP2023084241A publication Critical patent/JP2023084241A/ja
Publication of JP2023084241A5 publication Critical patent/JP2023084241A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2021198295A 2021-12-07 2021-12-07 垂直共振器型発光素子 Pending JP2023084241A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021198295A JP2023084241A (ja) 2021-12-07 2021-12-07 垂直共振器型発光素子
CN202280080814.3A CN118355574A (zh) 2021-12-07 2022-11-22 垂直腔发光元件
US18/716,893 US20250047073A1 (en) 2021-12-07 2022-11-22 Vertical cavity light-emitting element
PCT/JP2022/043105 WO2023106080A1 (ja) 2021-12-07 2022-11-22 垂直共振器型発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021198295A JP2023084241A (ja) 2021-12-07 2021-12-07 垂直共振器型発光素子

Publications (2)

Publication Number Publication Date
JP2023084241A true JP2023084241A (ja) 2023-06-19
JP2023084241A5 JP2023084241A5 (enExample) 2024-12-12

Family

ID=86730388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021198295A Pending JP2023084241A (ja) 2021-12-07 2021-12-07 垂直共振器型発光素子

Country Status (4)

Country Link
US (1) US20250047073A1 (enExample)
JP (1) JP2023084241A (enExample)
CN (1) CN118355574A (enExample)
WO (1) WO2023106080A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025084020A1 (ja) * 2023-10-18 2025-04-24 ソニーセミコンダクタソリューションズ株式会社 発光装置
WO2025197976A1 (ja) * 2024-03-22 2025-09-25 スタンレー電気株式会社 窒化物半導体多層膜反射鏡の製造方法、垂直共振器型面発光レーザウエハ及び垂直共振器型面発光レーザ
WO2025204656A1 (ja) * 2024-03-28 2025-10-02 ソニーグループ株式会社 発光素子及び製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230044637A1 (en) * 2020-01-08 2023-02-09 Stanley Electric Co., Ltd. Vertical cavity light-emitting element

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014747A (ja) * 2002-06-06 2004-01-15 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子
JP2005019872A (ja) * 2003-06-27 2005-01-20 Hitachi Cable Ltd 窒化物半導体の製造方法及び半導体ウエハ並びに半導体デバイス
US20070003697A1 (en) * 2004-07-28 2007-01-04 Jean-Francois Carlin Lattice-matched AllnN/GaN for optoelectronic devices
JP2014138096A (ja) * 2013-01-17 2014-07-28 Ricoh Co Ltd 面発光レーザアレイ及びその製造方法
JP2018014444A (ja) * 2016-07-22 2018-01-25 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
JP2018014747A (ja) * 2012-01-26 2018-01-25 サン パテント トラスト 追加のウェイクアップ機会を有する改良された不連続受信動作
WO2020230669A1 (ja) * 2019-05-15 2020-11-19 スタンレー電気株式会社 半導体多層膜反射鏡を用いた垂直共振器型発光素子及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014747A (ja) * 2002-06-06 2004-01-15 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子
JP2005019872A (ja) * 2003-06-27 2005-01-20 Hitachi Cable Ltd 窒化物半導体の製造方法及び半導体ウエハ並びに半導体デバイス
US20070003697A1 (en) * 2004-07-28 2007-01-04 Jean-Francois Carlin Lattice-matched AllnN/GaN for optoelectronic devices
JP2018014747A (ja) * 2012-01-26 2018-01-25 サン パテント トラスト 追加のウェイクアップ機会を有する改良された不連続受信動作
JP2014138096A (ja) * 2013-01-17 2014-07-28 Ricoh Co Ltd 面発光レーザアレイ及びその製造方法
JP2018014444A (ja) * 2016-07-22 2018-01-25 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
WO2020230669A1 (ja) * 2019-05-15 2020-11-19 スタンレー電気株式会社 半導体多層膜反射鏡を用いた垂直共振器型発光素子及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025084020A1 (ja) * 2023-10-18 2025-04-24 ソニーセミコンダクタソリューションズ株式会社 発光装置
WO2025197976A1 (ja) * 2024-03-22 2025-09-25 スタンレー電気株式会社 窒化物半導体多層膜反射鏡の製造方法、垂直共振器型面発光レーザウエハ及び垂直共振器型面発光レーザ
WO2025204656A1 (ja) * 2024-03-28 2025-10-02 ソニーグループ株式会社 発光素子及び製造方法

Also Published As

Publication number Publication date
WO2023106080A1 (ja) 2023-06-15
CN118355574A (zh) 2024-07-16
US20250047073A1 (en) 2025-02-06

Similar Documents

Publication Publication Date Title
JP6947386B2 (ja) 半導体発光素子および半導体発光素子の製造方法
JP7667987B2 (ja) フォトニック結晶面発光レーザ素子
WO2023106080A1 (ja) 垂直共振器型発光素子
JP6819956B2 (ja) 半導体多層膜反射鏡、これを用いた垂直共振器型発光素子及びこれらの製造方法。
JP2010109147A (ja) 発光素子およびその製造方法
JPWO2009078482A1 (ja) 半導体発光素子
JP4909533B2 (ja) 半導体レーザ素子及びその製造方法
JP7754653B2 (ja) 垂直共振器型発光素子
US20170271847A1 (en) Semiconductor light-emitting element and method for manufacturing the same
US11146040B2 (en) Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element
JP2025004105A (ja) 垂直共振器型発光素子
WO2023022005A1 (ja) 垂直共振器型発光素子
US20090103583A1 (en) Surface emitting laser and manufacturing method thereof
JP2018125404A (ja) 面発光レーザ素子
JP7330805B2 (ja) 垂直共振器型発光素子
US20210281050A1 (en) Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element
US20220393436A1 (en) Vertical cavity light-emitting element and manufacturing method of the same
JP2017204579A (ja) 垂直共振器型発光素子及び垂直共振器型発光素子の製造方法
JP2009238843A (ja) 発光装置
US6683324B2 (en) Semiconductor laser device in which thicknesses of optical guide region and AlGaN cladding layers satisfy predetermined condition
JP2006012899A (ja) 半導体レーザ素子および半導体レーザ素子の製造方法
JP2009059733A (ja) 面発光レーザ及び面発光レーザの製造方法
JP7556888B2 (ja) 発光デバイスおよび発光デバイスの製造方法
JP2024142980A (ja) フォトニック結晶面発光レーザ素子
JP2023127163A (ja) 垂直共振器型発光素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241204

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250708

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250904

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250930

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251127

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20251209