JP2023079039A - 半導体製造装置および半導体製造方法 - Google Patents

半導体製造装置および半導体製造方法 Download PDF

Info

Publication number
JP2023079039A
JP2023079039A JP2021192442A JP2021192442A JP2023079039A JP 2023079039 A JP2023079039 A JP 2023079039A JP 2021192442 A JP2021192442 A JP 2021192442A JP 2021192442 A JP2021192442 A JP 2021192442A JP 2023079039 A JP2023079039 A JP 2023079039A
Authority
JP
Japan
Prior art keywords
process chamber
gas
densitometer
valve
fill tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021192442A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023079039A5 (enExample
Inventor
正明 永瀬
Masaaki Nagase
秀和 石井
Hidekazu Ishii
信一 池田
Nobukazu Ikeda
功二 西野
Koji Nishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikin Inc
Original Assignee
Fujikin Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikin Inc filed Critical Fujikin Inc
Priority to JP2021192442A priority Critical patent/JP2023079039A/ja
Publication of JP2023079039A publication Critical patent/JP2023079039A/ja
Publication of JP2023079039A5 publication Critical patent/JP2023079039A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Chemical Vapour Deposition (AREA)
JP2021192442A 2021-11-26 2021-11-26 半導体製造装置および半導体製造方法 Pending JP2023079039A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021192442A JP2023079039A (ja) 2021-11-26 2021-11-26 半導体製造装置および半導体製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021192442A JP2023079039A (ja) 2021-11-26 2021-11-26 半導体製造装置および半導体製造方法

Publications (2)

Publication Number Publication Date
JP2023079039A true JP2023079039A (ja) 2023-06-07
JP2023079039A5 JP2023079039A5 (enExample) 2024-11-06

Family

ID=86646166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021192442A Pending JP2023079039A (ja) 2021-11-26 2021-11-26 半導体製造装置および半導体製造方法

Country Status (1)

Country Link
JP (1) JP2023079039A (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068465A (ja) * 1999-06-22 2001-03-16 Tokyo Electron Ltd 有機金属気相成長方法及び有機金属気相成長装置
JP2006324532A (ja) * 2005-05-20 2006-11-30 Matsushita Electric Ind Co Ltd 薄膜堆積方法および薄膜堆積装置
JP2013019003A (ja) * 2011-07-08 2013-01-31 Fujikin Inc 半導体製造装置の原料ガス供給装置
JP2019157260A (ja) * 2018-03-16 2019-09-19 東京エレクトロン株式会社 流量制御方法、流量制御装置及び成膜装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068465A (ja) * 1999-06-22 2001-03-16 Tokyo Electron Ltd 有機金属気相成長方法及び有機金属気相成長装置
JP2006324532A (ja) * 2005-05-20 2006-11-30 Matsushita Electric Ind Co Ltd 薄膜堆積方法および薄膜堆積装置
JP2013019003A (ja) * 2011-07-08 2013-01-31 Fujikin Inc 半導体製造装置の原料ガス供給装置
JP2019157260A (ja) * 2018-03-16 2019-09-19 東京エレクトロン株式会社 流量制御方法、流量制御装置及び成膜装置

Similar Documents

Publication Publication Date Title
US8461059B2 (en) Batch CVD method and apparatus for semiconductor process
US8357619B2 (en) Film formation method for forming silicon-containing insulating film
KR100977819B1 (ko) 기판 처리 장치 및 반도체 장치의 제조 방법
US8216648B2 (en) Film formation method and apparatus
US8646407B2 (en) Film formation apparatus for semiconductor process and method for using the same
CN101765680B (zh) 处理气体供给系统及处理装置
US9238257B2 (en) Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus
US8304021B2 (en) Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
KR101422651B1 (ko) 반도체 장치의 제조 방법 및 기판 처리 장치
US8168270B2 (en) Film formation method and apparatus for semiconductor process
US20090124083A1 (en) Film formation apparatus and method for using same
JP5963456B2 (ja) 半導体装置の製造方法、基板処理装置、及び基板処理方法
KR101520844B1 (ko) 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치, 기록 매체 및 반도체 장치
KR20100071961A (ko) 클리닝 방법 및 기판 처리 장치
JP4356943B2 (ja) 基板処理装置及び半導体装置の製造方法
JP2023079039A (ja) 半導体製造装置および半導体製造方法
KR101920530B1 (ko) 성막 방법, 성막 장치 및 기억 매체
JP2008091805A (ja) 半導体装置の製造方法、及び基板処理装置
JP2004050119A (ja) 洗浄装置及び洗浄方法
CN100541737C (zh) 成膜方法和成膜装置
JP2013199673A (ja) 酸化ルテニウム膜の成膜方法および酸化ルテニウム膜成膜用処理容器のクリーニング方法
TWI235422B (en) Manufacturing method for semiconductor device
JP2001284336A (ja) 成膜装置及び成膜方法
JP2007109865A (ja) 基板処理装置および半導体装置の製造方法
JP3892845B2 (ja) 処理方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241028

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241028

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250731

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250827

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251020