JP2023026446A - 金属-セラミックス接合基板およびその製造方法 - Google Patents
金属-セラミックス接合基板およびその製造方法 Download PDFInfo
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- JP2023026446A JP2023026446A JP2022193965A JP2022193965A JP2023026446A JP 2023026446 A JP2023026446 A JP 2023026446A JP 2022193965 A JP2022193965 A JP 2022193965A JP 2022193965 A JP2022193965 A JP 2022193965A JP 2023026446 A JP2023026446 A JP 2023026446A
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- ceramic
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- 239000000758 substrate Substances 0.000 title claims abstract description 144
- 239000000919 ceramic Substances 0.000 title claims abstract description 129
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 82
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052751 metal Inorganic materials 0.000 claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 71
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 claims description 74
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 7
- 238000005266 casting Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 10
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
下側鋳型部材の上面に、平面形状が略矩形の70mm×70mm×5mmの大きさのベース板を形成するための(金属ベース板形成用)凹部(金属ベース板形成部)が形成され、このベース板形成部の底面の略中央部に、平面形状が略矩形の50mm×50mm×0.6mmの大きさのセラミックス基板を収容するための凹部(セラミックス基板収容部)が形成され、このセラミックス基板収容部の底面の略中央部に、平面形状が略矩形の48mm×48mm×0.6mmの大きさの回路パターン用金属板を形成するための(回路パターン形成用)凹部(回路パターン用金属板形成部)が形成され、金属ベース板形成部と回路パターン用金属板形成部との間に延びる溶湯流路が形成された(図2A~図2Bに示す鋳型20と同様の形状の)カーボン製の鋳型を用意した。
純度99.9質量%(3N)のアルミニウムに代えて純度99.99質量%(4N)のアルミニウムを使用した以外は、実施例1と同様の方法により、金属-セラミックス接合基板を作製し、STEM-EDS分析と接合強度(ピール強度)の測定を行った。その結果、接合界面に生成された酸化物層の最大厚さは1nmであった。また、接合強度(ピール強度)は350N/cm以上であり、十分に強い接合強度であった。
露点を-50℃にした以外は、実施例1と同様の方法により、金属-セラミックス接合基板を作製し、STEM-EDS分析と接合強度(ピール強度)の測定を行った。その結果、接合界面に生成された酸化物層の最大厚さは1nmであった。また、接合強度(ピール強度)は350N/cm以上であり、十分に強い接合強度であった。
(図3に示す)予熱部200と冷却部500の開度を調整可能な排気口を閉じたままにし、(注湯部300内の)酸素濃度を4ppmにした以外は、実施例1と同様の方法により、金属-セラミックス接合基板を作製し、STEM-EDS分析と接合強度(ピール強度)の測定を行った。その結果、接合界面に生成された酸化物層の最大厚さは2nmであった。また、接合強度(ピール強度)は350N/cmであり、十分に強い接合強度であった。
(図3に示す)予熱部200と冷却部500の開度を調整可能な排気口を閉じたままにし、予熱部200と冷却部500内に導入する窒素ガスの流量を10L/分にし、(注湯部300内の)酸素濃度を10ppmにし、露点を-50℃にした以外は、実施例1と同様の方法により、金属-セラミックス接合基板を作製し、STEM-EDS分析と接合強度(ピール強度)の測定を行った。その結果、接合界面に生成された酸化物層の最大厚さは3nmであった。また、接合強度(ピール強度)は350N/cmであり、十分に強い接合強度であった。
前置換部と後置換部において真空引きと窒素ガスパージを行わず、(注湯部300内の)酸素濃度を40ppm、露点を-60℃にした以外は、実施例5と同様の方法により、金属-セラミックス接合基板を作製し、STEM-EDS分析と接合強度(ピール強度)の測定を行った。その結果、接合界面に生成された酸化物層の最大厚さは5nmであった。また、接合強度(ピール強度)は300N/cmであり、接合強度は十分でなかった。
予熱部200、注湯部300、加圧冷却部400および冷却部500の上下の内壁の断熱材を介してガスを導入するガス導入ノズルに代えて、予熱部200、注湯部300、加圧冷却部400および冷却部500の上下の内壁の熱材を貫通するガス導入ノズルを設けて、予熱部200、注湯部300、加圧冷却部400および冷却部500内に直接ガスを導入することにより、露点を-40℃にした以外は、実施例1と同様の方法により、金属-セラミックス接合基板を作製し、STEM-EDS分析と接合強度(ピール強度)の測定を行った。その結果、接合界面に生成された酸化物層の最大厚さは10nmであった。また、接合強度(ピール強度)は280N/cmであり、接合強度は十分でなかった。
12 金属ベース板
14 回路パターン用金属板
20 鋳型
22 下側鋳型部材
22a 金属ベース板形成用凹部(金属ベース板形成部)
22b セラミックス基板収容部
22c 回路パターン形成用凹部(回路パターン用金属板形成部)
24 上側鋳型部材
32 注湯口
34 坩堝
200 予熱部
202、302、402 ヒータ
300 注湯部
310 注湯装置
312 溶湯
314 溶湯溜め
316 シリンダ
316a 注湯入口
316b 注湯出口
318 ピストン
320 ピストン駆動装置
400 加圧冷却部
432 上側冷却ブロック
434 下側冷却ブロック
436、438 冷却ブロック駆動装置
500 冷却部
530 冷却装置
532 上側冷却ブロック
534 下側冷却ブロック
536、538 冷却ブロック駆動装置
600 搬送路
Claims (10)
- 鋳型内にセラミックス基板を配置し、鋳型を炉内に入れ、炉内の酸素濃度を25ppm以下、露点を-45℃以下まで低下させ、セラミックス基板の一方の面に接触するようにアルミニウムの溶湯を注湯した後に溶湯を冷却して固化させることにより、アルミニウム板をセラミックス基板の一方の面に形成してそのアルミニウム板をセラミックス基板に直接接合させることを特徴とする、金属-セラミックス接合基板の製造方法。
- 前記アルミニウム板が回路パターン用アルミニウム板であることを特徴とする、請求項1に記載の金属-セラミックス接合基板の製造方法。
- 前記鋳型内の前記セラミックス基板の一方の面に接触するように前記アルミニウムの溶湯を注湯する際に、前記鋳型内の前記セラミックス基板の他方の面に接触するように前記アルミニウムの溶湯を注湯し、アルミニウムベース板を前記セラミックス基板の他方の面に形成して前記セラミックス基板に直接接合させることを特徴とする、請求項1または2に記載の金属-セラミックス接合基板の製造方法。
- 前記セラミックス基板が窒化アルミニウム基板であり、前記アルミニウムが純度99.9質量%以上のアルミニウムであることを特徴とする、請求項1乃至3のいずれかに記載の金属-セラミックス接合基板の製造方法。
- 前記注湯と前記冷却を加圧しながら行うことを特徴とする、請求項1乃至4のいずれかに記載の金属-セラミックス接合基板の製造方法。
- セラミック基板の一方の面にアルミニウムからなるアルミニウム板が直接接合し、このアルミニウム板とセラミックス基板との接合界面に形成された酸化物層の最大厚さが4nm以下であり、アルミニウム板とセラミックス基板との間の接合強度が330N/cm以上であることを特徴とする、金属-セラミックス接合基板。
- 前記アルミニウム板が回路パターン用アルミニウム板であることを特徴とする、請求項6に記載の金属-セラミックス接合基板。
- 前記セラミックス基板の他方の面にアルミニウムからなるアルミニウムベース板が直接接合し、このアルミニウムベース板と前記セラミックス基板との接合界面に形成された酸化物層の最大厚さが4nm以下であり、アルミニウムベース板と前記セラミックス基板との間の接合強度が330N/cm以上であることを特徴とする、請求項6または7に記載の金属-セラミックス接合基板。
- 前記酸化物層の最大厚さが3nm以下であり、前記接合強度が350N/cm以上であることを特徴とする、請求項6乃至8のいずれかに記載の金属-セラミックス接合基板。
- 前記セラミックス基板が窒化アルミニウム基板であり、前記アルミニウムが純度99.9質量%以上のアルミニウムであることを特徴とする、請求項6乃至9のいずれかに記載の金属-セラミックス接合基板。
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