JP2023021055A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP2023021055A JP2023021055A JP2022120432A JP2022120432A JP2023021055A JP 2023021055 A JP2023021055 A JP 2023021055A JP 2022120432 A JP2022120432 A JP 2022120432A JP 2022120432 A JP2022120432 A JP 2022120432A JP 2023021055 A JP2023021055 A JP 2023021055A
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- processing
- substrate
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- wetting
- substrates
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- 238000009736 wetting Methods 0.000 claims abstract description 164
- 238000000034 method Methods 0.000 claims abstract description 109
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- 238000003860 storage Methods 0.000 claims description 125
- 238000001035 drying Methods 0.000 claims description 61
- 230000003028 elevating effect Effects 0.000 claims description 31
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- 238000005507 spraying Methods 0.000 claims description 8
- 238000010923 batch production Methods 0.000 claims 2
- 238000003672 processing method Methods 0.000 abstract description 20
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 230000036544 posture Effects 0.000 description 85
- 238000010438 heat treatment Methods 0.000 description 35
- 239000012530 fluid Substances 0.000 description 32
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- 239000000126 substance Substances 0.000 description 20
- 239000003960 organic solvent Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 239000001569 carbon dioxide Substances 0.000 description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 206010034719 Personality change Diseases 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- LMRFGCUCLQUNCZ-UHFFFAOYSA-N hydrogen peroxide hydrofluoride Chemical compound F.OO LMRFGCUCLQUNCZ-UHFFFAOYSA-N 0.000 description 1
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
C 収納容器
W 基板
10 基板処理装置
100 第1工程処理部
110 第1ロードポートユニット
120 第1インデックスチャンバ
122 第1返送ロボット
124 姿勢変更ユニット
130 第1返送チャンバ
132 第1返送ユニット
140 バッチ式液処理チャンバ
141 第1バッチ式液処理チャンバ
141a 第1処理槽
141b 第1液供給ライン
141c 第1液排出ライン
141d 第1加熱部材
141e 第1液供給源
142 第2バッチ式液処理チャンバ
142a 第2処理槽
142b 第2液供給ライン
142c 第2液排出ライン
142d 第2加熱部材
142e 第2液供給源
143 第3バッチ式液処理チャンバ
150 第2返送チャンバ
152 第2返送ユニット
200 第2工程処理部
210 第1バッファー部
220 第3返送チャンバ
222 第3返送ユニット
230 枚葉式液処理チャンバ
240 乾燥チャンバ
250 第2バッファー部
260 第2インデックスチャンバ
262 第2返送ロボット
270 第2ロードポートユニット
300 第3バッチ式液処理チャンバに提供される基板処理装置
310 処理槽
312 収容空間
314 液供給ライン
315 液供給源
316 液排出ライン
320 加熱部材
330 姿勢変換部材
332 移動部
334 回転部
340 昇降部材
342 シャフト
344 駆動機
600 制御機
Claims (20)
- 基板を処理する装置において、
処理液が収容される収容空間を有して、複数の基板を液処理する処理槽と、及び
前記処理液に浸された状態の基板の姿勢を垂直姿勢から水平姿勢に変換する姿勢変換部材を含む、ことを特徴とする基板処理装置。 - 前記処理槽の上部に設置され、前記処理液から脱して外部に露出される基板にウェッティング液を噴射するウェッティングモジュールを含む、ことを特徴とする請求項1に記載の基板処理装置。
- 前記ウェッティングモジュールは、
前記ウェッティング液をストリーム、またはスプレー方式で前記ウェッティング液を噴射するように構成されるウェッティングノズルを含む、ことを特徴とする請求項2に記載の基板処理装置。 - 前記ウェッティングモジュールが噴射する前記ウェッティング液は、
前記収容空間に収容された前記処理液と同じ種類の液である、ことを特徴とする請求項2に記載の基板処理装置。 - 前記ウェッティングモジュールは、
上部から眺める時、前記ウェッティングノズルを基板の半径方向に沿って移動させる移動部材を含む、ことを特徴とする請求項3に記載の基板処理装置。 - 基板を臨時保管するバッファー部と、及び
前記収容空間に収容された前記処理液から脱して外部に露出された基板を前記バッファー部に返送する返送ユニットを含む、ことを特徴とする請求項1に記載の基板処理装置。 - 前記バッファー部は、
基板を支持する支持棚と、
前記支持棚に支持された基板にウェッティング液を噴射するウェッティングノズルと、及び
前記支持棚に支持された基板の下部に配置されて前記ウェッティング液を排水する排水隔壁を含む、ことを特徴とする請求項6に記載の基板処理装置。 - 前記ウェッティングノズルは、
複数で提供され、前記ウェッティングノズルらのうちで何れか一つと前記ウェッティングノズルらのうちで他の一つはお互いに向い合う位置に設置される、ことを特徴とする請求項7に記載の基板処理装置。 - 前記支持棚、前記ウェッティングノズル、そして、前記排水隔壁は、それぞれ基板と対応されるように複数で提供され、
前記返送ユニットは、
複数枚の基板を返送するバッチハンドを含むが、
前記バッチハンドがグリップする複数枚の基板間の間隔は、
前記支持棚らの間の間隔と同一である、ことを特徴とする請求項8に記載の基板処理装置。 - 前記ウェッティングノズルが噴射する前記ウェッティング液は、前記収容空間に収容された前記処理液と同じ種類の液である、ことを特徴とする請求項7に記載の基板処理装置。
- 前記収容空間に収容された前記処理液に浸され、基板らを収納する収納空間を有する収納容器と、及び
前記収納容器に収納されて前記水平姿勢に変換された基板を上下方向に移動させる昇降部材を含み、
前記姿勢変換部材は、
前記収納容器に装着可能であり、前記収納容器を回転させる回転部と、及び
前記処理槽に設置され、前記回転部に装着された前記収納容器を水平方向に移動させる移動部を含み、
前記収納容器の一面-前記収納容器が回転されて基板の姿勢が前記水平姿勢に変換された時、前記一面は前記ウェッティングモジュールと向い合い-は開放される、ことを特徴とする請求項2乃至請求項5のうちで何れか一つに記載の基板処理装置。 - 前記装置は、
基板を返送するハンドを有する返送ユニットと、及び
制御機をさらに含み、
前記制御機は、
前記昇降部材が前記収納容器を上の方向に移動させて外部に露出された基板を前記収納容器から搬出するように前記昇降部材、そして、前記返送ユニットを制御する、ことを特徴とする請求項11に記載の基板処理装置。 - 基板を処理する装置において、
バッチ式で複数の基板を同時に液処理する第1工程処理部と、及び
枚葉式で一つの基板を液処理または乾燥処理する第2工程処理部を含み、
前記第1工程処理部は、
処理液が収容される収容空間を有する処理槽と、及び
前記処理液に浸された状態の基板の姿勢を垂直姿勢から水平姿勢に変換する姿勢変換部材を含む、ことを特徴とする基板処理装置。 - 前記第1工程処理部は、
前記水平姿勢に変換された基板を上の方向に移動させ、前記収容空間に収容された前記処理液から脱して外部に露出されるようにする昇降部材をさらに含む、ことを特徴とする請求項13に記載の基板処理装置。 - 前記第1工程処理部は、
基板を収納する収納空間を有する複数の収納容器を含み、
前記姿勢変換部材は前記収納容器のうちで何れか一つを回転させて収納された基板らを前記水平姿勢に変換し、
前記昇降部材は前記収納容器に収納されて前記水平姿勢に変換された基板を上下方向に移動させる、ことを特徴とする請求項14に記載の基板処理装置。 - 前記第2工程処理部は、
基板を臨時保管するバッファー部を含み、
前記第1工程処理部は、
前記昇降部材によって前記収容空間に収容された前記処理液から脱して外部に露出された基板を前記バッファー部に返送する第1返送ユニットをさらに含む、ことを特徴とする請求項14に記載の基板処理装置。 - 前記第2工程処理部は、
枚葉式で基板を処理する枚葉式処理チャンバと、及び
前記バッファー部と前記枚葉式処理チャンバの間で基板を返送する第2返送ユニットをさらに含み、
前記第2返送ユニットは、
前記バッファー部から複数の基板を搬出して前記枚葉式処理チャンバに返送するように複数の返送ハンドを有する、ことを特徴とする請求項16に記載の基板処理装置。 - 前記バッファー部は、
枚葉式で基板を処理する枚葉式処理チャンバと積層されるように配置されるが、前記枚葉式処理チャンバの上部に配置される、ことを特徴とする請求項17に記載の基板処理装置。 - 基板を処理する装置において、
バッチ式で複数の基板を液処理する第1工程処理部と、及び
前記第1工程処理部で処理された基板を処理し、枚葉式で一つの基板を液処理または乾燥処理する第2工程処理部を含み、
前記第1工程処理部は、
処理液が収容される収容空間を有する複数の処理槽と、
前記処理液に浸された状態の基板の姿勢を垂直姿勢から水平姿勢に変換させる姿勢変換部材と、及び
前記処理槽の上部に設置され、前記収容空間に収容された前記処理液から脱して外部に露出される基板にウェッティング液を噴射するウェッティングモジュールを含み、
前記処理槽らのうちで何れか一つに収容される前記処理液は前記ウェッティングモジュールが噴射する前記ウェッティング液と同じ種類の液であり、
前記処理槽らのうちで他の一つに収容される前記処理液は前記ウェッティングモジュールが噴射する前記ウェッティング液と他の種類の液である、ことを特徴とする基板処理装置。 - 前記第2工程処理部は、
基板を臨時保管するバッファー部を含み、
前記第1工程処理部は、
前記収容空間に収容された前記処理液に浸され、前記姿勢変換部材によって回転される収納空間を有する収納容器と、
前記姿勢変換部材によって回転された前記収納容器を上下方向に移動させる昇降部材と、及び
前記昇降部材によって外部に露出された基板を前記バッファー部に返送し、複数枚の基板を返送するバッチハンドを有する返送ユニットをさらに含み、
前記バッファー部は、
基板を支持する支持棚らと、
前記支持棚に支持されたそれぞれの基板にウェッティング液を噴射する第2ウェッティングノズルらと、
前記支持棚に支持された基板らそれぞれの下部に配置されて前記ウェッティング液を排水する排水隔壁らと、及び
前記支持棚に設置され、基板の支持如何をセンシングするセンサーを含む、ことを特徴とする請求項19に記載の基板処理装置。
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