JP2022549828A - モノリシックモジュラー高周波プラズマ源 - Google Patents
モノリシックモジュラー高周波プラズマ源 Download PDFInfo
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- 238000012545 processing Methods 0.000 claims description 45
- 230000005404 monopole Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- -1 transition metal nitrides Chemical class 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910004541 SiN Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- 229910017083 AlN Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 238000003491 array Methods 0.000 abstract description 5
- 230000005670 electromagnetic radiation Effects 0.000 description 22
- 238000003860 storage Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 230000003321 amplification Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 241000473391 Archosargus rhomboidalis Species 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QYXTVGQRCVHFMQ-UHFFFAOYSA-N [N].[F].[O].[Y] Chemical compound [N].[F].[O].[Y] QYXTVGQRCVHFMQ-UHFFFAOYSA-N 0.000 description 1
- LWALJSLFBDLAOE-UHFFFAOYSA-N [N].[F].[O].[Zr].[Hf] Chemical compound [N].[F].[O].[Zr].[Hf] LWALJSLFBDLAOE-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本出願は、その内容全体が参照により本明細書に組み込まれている、2019年9月27日に出願された、米国非仮出願第16/586,462号の優先権を主張する。
Claims (20)
- 第1の表面と、前記第1の表面とは反対側の第2の表面とを有する誘電体板と、
前記誘電体板の前記第1の表面から外に延びる複数の突出部とを備え、前記複数の突出部および前記誘電体板が、モノリシック構造である、モノリシックソースアレイ。 - 各突出部が、側壁表面および第3の表面を備え、前記第3の表面が、前記第1の表面に平行である、請求項1に記載のモノリシックソースアレイ。
- 各突出部が、前記第3の表面の中への孔をさらに備える、請求項2に記載のモノリシックソースアレイ。
- 前記孔の深さが、前記第3の表面と前記第1の表面との間の前記突出部の厚さ未満である、請求項3に記載のモノリシックソースアレイ。
- 前記複数の突出部の各突出部が、前記第1の表面に対して垂直な軸について中心対称である、請求項1に記載のモノリシックソースアレイ。
- 前記第1の表面に平行な平面に沿った各突出部の断面が、円形である、請求項5に記載のモノリシックソースアレイ。
- 前記第1の表面に平行な平面に沿った各突出部の断面が、多角形である、請求項5に記載のモノリシックソースアレイ。
- 前記誘電体板が、約30mm以下である、前記第1の表面と前記第2の表面との間の厚さを有する、請求項1に記載のモノリシックソースアレイ。
- 前記第1の表面と前記第2の表面との間の前記厚さが、約10mm以下である、請求項8に記載のモノリシックソースアレイ。
- 前記誘電体板が、前記第2の表面の上に不活性誘電体層を備える、請求項1に記載のモノリシックソースアレイ。
- 前記不活性誘電体層が、AlNと、SiNと、SiO2と、Al2O3と、遷移金属窒化物と、遷移金属酸化物と、Al、O、およびNを含む組成物と、Al、Hf、O、およびFを含む組成物と、Y、O、F、およびNを含む組成物と、Hf、Zr、O、F、およびNを含む組成物とのうちの1つまたは複数を含む、請求項10に記載のモノリシックソースアレイ。
- 前記誘電体板および前記突出部が、Al2O3を含む、請求項1に記載のモノリシックソースアレイ。
- モノリシックソースアレイであって、前記モノリシックソースアレイが、誘電体板と、前記誘電体板の表面から上向きに延びる複数の突出部とを備える、モノリシックソースアレイと、
前記モノリシックソースアレイの上のハウジングであって、前記ハウジングが、前記突出部の各々を受け入れるようにサイズ決定された複数の開口を備える、ハウジングと
を備える、アセンブリ。 - 前記ハウジングが、導電性材料である、請求項13に記載のアセンブリ。
- 前記ハウジングが、熱インターフェース材料によって前記誘電体板の前記表面から分離された、請求項13に記載のアセンブリ。
- 前記複数の開口が、前記ハウジングの厚さ全体を通過する、請求項13に記載のアセンブリ。
- チャンバと、
前記チャンバとインターフェースするアセンブリであって、前記アセンブリは、
モノリシックソースアレイであって、
第1の表面と、前記第1の表面とは反対側の第2の表面とを有する誘電体板であって、前記第2の表面が、前記チャンバの内部空間に曝露され、前記第2の表面が、外部環境に曝露された、誘電体板と、
前記誘電体板の前記第1の表面から外に延びる複数の突出部であって、前記複数の突出部および前記誘電体板が、モノリシック構造である、複数の突出部と
を含む、モノリシックソースアレイと、
ハウジングであって、前記ハウジングが、
導電性本体と、
前記導電性本体を通る複数の開口であって、各開口が、前記突出部のうちの1つを取り囲むようにサイズ決定された、複数の開口と
を含む、ハウジングと
を含む、アセンブリと
を備える、処理ツール。 - 各突出部が、孔を備え、モノポールアンテナが、各孔中に配設された、請求項17に記載の処理ツール。
- 各モノポールアンテナが、異なる高周波放出モジュールに結合された、請求項18に記載の処理ツール。
- 前記モノリシックソースアレイから反対側に面する前記ハウジングの表面の上のプレート
をさらに備える、請求項17に記載の処理ツール。
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JP2023133781A JP7492636B2 (ja) | 2019-09-27 | 2023-08-21 | モノリシックモジュラー高周波プラズマ源 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/586,462 | 2019-09-27 | ||
US16/586,462 US20210098230A1 (en) | 2019-09-27 | 2019-09-27 | Monolithic modular high-frequency plasma source |
PCT/US2020/050900 WO2021061452A1 (en) | 2019-09-27 | 2020-09-15 | Monolithic modular high-frequency plasma source |
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JP2022549828A true JP2022549828A (ja) | 2022-11-29 |
JP7336591B2 JP7336591B2 (ja) | 2023-08-31 |
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JP2023133781A Active JP7492636B2 (ja) | 2019-09-27 | 2023-08-21 | モノリシックモジュラー高周波プラズマ源 |
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Country Status (7)
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US (2) | US20210098230A1 (ja) |
EP (1) | EP4035198A4 (ja) |
JP (2) | JP7336591B2 (ja) |
KR (1) | KR20220065873A (ja) |
CN (1) | CN114424318B (ja) |
TW (1) | TW202113918A (ja) |
WO (1) | WO2021061452A1 (ja) |
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US11881384B2 (en) * | 2019-09-27 | 2024-01-23 | Applied Materials, Inc. | Monolithic modular microwave source with integrated process gas distribution |
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JP2011192912A (ja) * | 2010-03-16 | 2011-09-29 | Tokyo Electron Ltd | プラズマ処理装置 |
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-
2019
- 2019-09-27 US US16/586,462 patent/US20210098230A1/en not_active Abandoned
-
2020
- 2020-09-15 KR KR1020227013849A patent/KR20220065873A/ko unknown
- 2020-09-15 JP JP2022518721A patent/JP7336591B2/ja active Active
- 2020-09-15 CN CN202080065164.6A patent/CN114424318B/zh active Active
- 2020-09-15 EP EP20869825.8A patent/EP4035198A4/en active Pending
- 2020-09-15 WO PCT/US2020/050900 patent/WO2021061452A1/en active Application Filing
- 2020-09-22 TW TW109132662A patent/TW202113918A/zh unknown
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2022
- 2022-10-05 US US17/960,535 patent/US20230026546A1/en active Pending
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2023
- 2023-08-21 JP JP2023133781A patent/JP7492636B2/ja active Active
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WO2008099896A1 (ja) * | 2007-02-16 | 2008-08-21 | Foi Corporation | 誘導コイル、プラズマ発生装置およびプラズマ発生方法 |
JP2011192912A (ja) * | 2010-03-16 | 2011-09-29 | Tokyo Electron Ltd | プラズマ処理装置 |
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US20210098230A1 (en) | 2021-04-01 |
JP2023166424A (ja) | 2023-11-21 |
CN114424318B (zh) | 2024-03-12 |
CN114424318A (zh) | 2022-04-29 |
KR20220065873A (ko) | 2022-05-20 |
JP7492636B2 (ja) | 2024-05-29 |
EP4035198A4 (en) | 2023-09-20 |
JP7336591B2 (ja) | 2023-08-31 |
TW202113918A (zh) | 2021-04-01 |
EP4035198A1 (en) | 2022-08-03 |
US20230026546A1 (en) | 2023-01-26 |
WO2021061452A1 (en) | 2021-04-01 |
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