JP2022535812A - 自律型水素発生反応閾値検出方法及びデバイス - Google Patents
自律型水素発生反応閾値検出方法及びデバイス Download PDFInfo
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Abstract
Description
本出願は、米国特許法第119条の当該部分に基づき、2019年6月3日に出願され、その全体が本明細書に組み込まれるUSSN62/856,282号に対して優先権を主張する。
本出願は、概して、金属インプラント用の処理システムの分野に関し、より具体的には、陰極電圧制御電気刺激(CVCES)処理システムの印加電圧を制御するための装置及び関連方法に関する。
図1~図6の部品リスト
1 開始点走査
2 終了点走査
10 CVCESインプラント処理システム
20 金属インプラント
28 偏光走査
30 ポテンシオスタット
32 作用電極
34 対極
36 基準電極
50 デバイス
52 プロセッサ
54 ソフトウェア
60 変曲点
90 電解液
300 複合偏光走査
304 曲線
308 曲線
312 曲線
316 点
318 点
322 点
500 プロセス
502 工程
504 工程
506 工程
508 工程
510 工程
512 工程
514 工程
516 工程
518 工程
526 工程
528 工程
530 工程
534 工程
538 工程
540 工程
544 工程
548 工程
552 工程
556 工程
560 工程
564 工程
600 プロセス
602 工程
604 工程
606 工程
608 工程
610 工程
614 工程
616 工程
618 工程
626 工程
634 工程
636 工程
640 工程
644 工程
648 工程
652 工程
658 工程
664 工程
A 走査セクション
B 走査セクション
C 走査セクション
D 走査セクション
E 走査セクション
Claims (23)
- 陰極電圧制御電気刺激を提供する方法であって、
作用電極として機能する、処理される金属対象を提供することと、
前記処理される金属対象に偏光走査を適用することと、
プロセッサを使用して、前記偏光走査から水素発生反応閾値を自律的に検出して、前記処理される対象に印加される陰極電圧を決定することと、
決定された前記陰極電圧を、前記処理される金属対象に印加することと、
を含む、方法。 - 前記処理される金属対象が、埋め込み可能な医療デバイスである、請求項1に記載の方法。
- 対極を表すアノードを更に設け、前記金属対象が前記作用電極を表す、請求項1に記載の方法。
- 電気化学プロセスが、監視され得る前記作用電極上で生じるように、ポテンシオスタットを更に設ける、請求項3に記載の方法。
- 開回路電位で前記偏光走査を開始し、前記偏光走査とその後リアルタイムで前記偏光走査を分析することによって前記水素発生反応の検出を可能にする目標電圧まで陰極走査することを更に含む、請求項1に記載の方法。
- 前記水素発生反応を示す前記偏光走査における勾配の第2の変化を検出する前に、酸素還元反応を示す前記偏光走査における勾配の第1の変化を検出することを更に含む、請求項5に記載の方法。
- 前記偏光走査における勾配の前記第1及び第2の変化での電圧を測定することと、
測定された前記電圧を特定の電圧範囲と比較することと、
を更に含む、請求項6に記載の方法。 - 勾配の前記第1及び第2の変化での測定された前記電圧間のスパンを測定することと、
前記対象の金属を推定するために、測定された前記スパンを特定の電圧スパンと比較することと、
を更に含む、請求項7に記載の方法。 - 前記対象の前記金属対象の決定時に、
バイオフィルム除去に最適である前記対象の前記金属の決定時に、前記電圧を指定された処理電圧に上昇させることと、
前記対象に対する電荷移動を測定することと、
測定された前記電荷移動が所定レベルに達した後、処理を終了することと、
を更に含む、請求項8に記載の方法。 - 前記水素発生反応を示す前記偏光走査の勾配の変化を検出することと、
前記勾配の変化の検出後、測定された電流及び前記対象の表面積に基づいて電流密度を決定することと、
決定された前記電流密度を目標電流密度と比較することと、
決定された前記目標電流密度が前記目標電流密度に等しい場合、前記電圧を処理電圧として印加することと、
を更に含む、請求項1に記載の方法。 - 前記電流密度が前記目標電流密度よりも低く、測定された電流が所定電流閾値を超える場合、前記電圧を上昇させることと、
前記電流密度が前記目標電流密度を超え、測定された電流が所定電流閾値を下回る場合、前記電圧を低下させることと、
前記電圧を上昇又は低下させた後、前記電流密度を前記目標電流密度と比較することと、
を更に含む、請求項10に記載の方法。 - 金属対象の処理のための陰極刺激電圧を制御するためのデバイスであって、
ポテンシオスタットに接続するように構成されたプロセッサと、
前記ポテンシオスタットに結合された作用電極、対極、及び基準電極であって、前記作用電極が処理される前記金属対象である、電極と、
を備え、
前記プロセッサが、
前記金属対象に偏光走査を適用して、偏光データを生成し、
前記プロセッサを使用して、バイオフィルムの除去のために前記処理される金属対象に印加される陰極電圧を決定するために、生成された前記偏光データから水素発生反応閾値を自律的に検出し、
決定された前記陰極電圧を、前記処理される金属対象に印加する
ようにプログラムされている、デバイス。 - 前記対象が、外科用インプラントである、請求項12に記載のデバイス。
- 前記デバイスが別個に、前記ポテンシオスタットに接続されている、請求項12に記載のデバイス。
- 前記デバイスが、前記ポテンシオスタットに組み込まれている、請求項12に記載のデバイス。
- 前記プロセッサが、開回路電位で前記偏光走査を開始し、前記偏光データからリアルタイムで前記水素発生反応の検出を可能にする目標電圧まで負の方向に走査するようにプログラムされている、請求項12に記載のデバイス。
- 前記プロセッサが、前記水素発生反応を示す前記偏光データにおける勾配の第2の変化を検出する前に、酸素還元反応を示す前記偏光データにおける勾配の第1の変化を検出するようにプログラムされている、請求項16に記載のデバイス。
- 前記プロセッサが、前記偏光データにおける勾配の前記第1及び第2の変化での電圧を測定し、測定された前記電圧を所定電圧範囲と比較するように更にプログラムされている、請求項17に記載のデバイス。
- 前記プロセッサが、勾配の前記第1及び第2の変化での測定された前記電圧間のスパンを測定し、測定された前記スパンを特定の電圧走査又は走査範囲と比較して、前記対象の金属組成を決定することを可能にするように更にプログラムされている、請求項18に記載のデバイス。
- 前記プロセッサが、前記対象の前記金属組成の推定後に、前記電圧を処理電圧まで陰極上昇させるように更にプログラムされている、請求項19に記載のデバイス。
- 前記プロセッサが、前記処理電圧までの前記陰極上昇後の前記対象に対する電荷移動を測定し、測定された前記電荷移動が所定レベルに達した後、前記処理を終了するように更にプログラムされている、請求項20に記載のデバイス。
- 前記プロセッサが、
前記水素発生反応を示す前記偏光データの勾配の変化を検出し、
前記勾配の変化の検出後、測定された電流及び前記対象の表面積に基づいて電流密度を決定し、
決定された前記電流密度を目標電流密度と比較し、
決定された前記目標電流密度が前記目標電流密度に等しい場合、適切な処理電圧を印加する、
ように更にプログラムされている、請求項12に記載のデバイス。 - 前記プロセッサが、
前記電流密度が前記目標電流密度よりも低く、測定された電流が所定電流閾値よりも大きい場合、前記電圧を陰極上昇させ、
前記電流密度が前記目標電流密度を超え、測定された電流が所定電流閾値未満である場合、前記電圧を低下させ、
前記電圧を上昇又は低下させた後、前記電流密度を前記目標電流密度と比較する、
ように更にプログラムされている、請求項22に記載のデバイス。
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